Description
2N6517 LGE Bipolar Transistors – BJT 500mA 350V NPN Through Hole TO-92-3
Features
Collector-Emitter Volt (Vceo): 350V
Collector-Base Volt (Vcbo): 350V
Collector Current (Ic): 0.5A
hfe: 30-200 @ 30mA
Power Dissipation (Ptot): 625mW
Current-Gain-Bandwidth (ftotal): 40MHz
Type: NPN
Manufacturer:Electronic Components
Datasheet:Others/2N6517.pdf
