Description
Motorola # MJD3055 Transistor NPN Bipolar 10 A, 60 V NPN Bipolar Power Transistor DIP
Specifications
Product Category: Bipolar Transistors – BJT
RoHS: No
Brand: ON Semiconductor
Mounting Style: SMD/SMT
Package / Case: TO-252-3 (DPAK)
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 70 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.1 V
Maximum DC Collector Current: 10 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 10 A
DC Collector/Base Gain hfe Min: 20
Minimum Operating Temperature: – 55 C
Packaging: Tube
Pd – Power Dissipation: 20 W
Manufacturer:Motorola
Datasheet:on-semi/MJD2955-D.PDF
