Description
ON Semiconductor MBRS3200T3G Schottky Diode 200V 3A Surface Mount / SMD SMB
This device employs the Schottky Barrier principle in a large area metal − to − silicon power diode. State − of − the − art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Manufacturer:ON Semiconductor
Datasheet:on-semi/MBRS3200T3-D.PDF
