Description
Philips BFR93 RF Bipolar NPN Transistor 12V 0.035A 6 GHz Surface Mount / SMD SOT-23
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and BFR93A.
TRANSISTOR, NPN RF SOT-23; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Typ Gain Bandwidth ft:5GHz; No. of Pins:3; Case Style:SOT-23; No. of Transistors:1; Termination Type:SMD; Transistor Type:Small Signal RF; Current Ic hFE:30mA; Max Current Ic:35mA; Max Current Ic Continuous a:35mA; Max Power Dissipation Ptot:300mW; Min Hfe:40; SMD Marking:R1; Transistor Case Style:SOT-23; Voltage Vcbo:15V
Very low intermodulation distortion· High power gain· Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS· RF wideband amplifiers and oscillators. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM F dim PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure intermodulation distortion = 2 mA; VCE = 1 MHz = 30 mA; VCE = 500 MHz; = 30 mA; VCE = 500 MHz; Tamb = 2 mA; VCE = 500 MHz; Tamb = 30 mA; VCE = 300 mV; = 493.25 MHz; Tamb 25 °C open emitter open base CONDITIONS TYP. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. PINNING PIN 2 3 base emitter collector
NXP BFR93 Bipolar – RF Transistor, NPN, 12 V, 6 GHz, 300 mW, 35 mA
Manufacturer:Philips
Datasheet:BFR93_T1.pdf
