Description
K4S641632H-UC75 SAMSUNG 1M x 16bit x 4 Banks Mobile Sdram in 54fbga
2.5V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. CAS latency Burst length Full page). Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. PASR (Partial Array Self Refresh). Internal TCSR (Temperature Compensated Self Refresh) DQM for masking. Auto refresh. 64ms refresh period (4K cycle). Commercial Temperature Operation ~ 70°C). Extended Temperature Operation 85°C). 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
The is 67,108,864 bits synchronous high data rate Dynamic RAM organized x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
Manufacturer:Samsung
Datasheet:Samsung/K4S641632H-UC75.pdf
