Description
2SK3767(STA4,Q,M) Toshiba Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 2A, 600V, 4.5ohm, 1-Element, N-Channel, Si, MOSFET TO-220FP-3 RoHS
Specifications
Manufacturer: Toshiba
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 2 A
Rds On – Drain-Source Resistance: 4.5 Ohms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 250 W
Channel Mode: Enhancement
Packaging: Reel
Configuration: Single
Height: 15 mm
Length: 10 mm
Series: 2SK3767
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Toshiba
Fall Time: 18 ns
Product Type: MOSFET
Rise Time: 40 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 0.068784 oz
Manufacturer: Toshiba
MFG Part #: 2SK3767(STA4,Q,M)
