Description
STP20NM60FD STMicroelectronics MOSFET N-Channel 20A 600V 192W Through Hole TO-220AB RoHS
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 20 A
Rds On – Drain-Source Resistance: 290 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 54 nC
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 192 W
Channel Mode: Enhancement
Tradename: FDmesh
Packaging: Tube
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Series: STP20NM60FD
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.6 mm
Brand: STMicroelectronics
Forward Transconductance – Min: 9 S
Fall Time: 22 ns
Product Type: MOSFET
Rise Time: 12 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-On Delay Time: 25 ns
Unit Weight: 0.068784 oz
Manufacturer: STMicroelectronics
MFG Part #: STP20NM60FD
