NGTB35N65FL2WG ON Semiconductor IGBT Transistor 650V 70A TO-247

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NGTB35N65FL2WG ON Semiconductor IGBT Transistors 650V/35A IGBT Trench Field Stop 650 V 70 A 300 W Through Hole TO-247 RoHS

SKU: NGTB35N65FL2WG Category: Tag: Brand:

Description

NGTB35N65FL2WG ON Semiconductor ^Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube Through Hole RoHS

Specifications
Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.2 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 70 A
Pd – Power Dissipation: 300 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Packaging: Tube
Continuous Collector Current Ic Max: 70 A
Brand: ON Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 1.340411 oz
Manufacturer: ON Semiconductor
MFG Part #: NGTB35N65FL2WG

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