Description
DMN3032LFDBQ-7 Diodes Incorporated MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B) RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DFN-2020-6
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 6.2 A
Rds On – Drain-Source Resistance: 30 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 10.6 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.7 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Packaging: Cut Tape
Packaging: Reel
Configuration: Dual
Series: DMN3032
Brand: Diodes Incorporated
Product Type: MOSFET
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Unit Weight: 0.000238 oz
Manufacturer: Diodes Inc.
MFG Part #: DMN3032LFDBQ-7
