Description
FZT1151ATA Diodes Incorporated Bipolar Transistors – BJT PNP High Gain GP BJT PNP 40V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-223-4
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 40 V
Collector- Base Voltage VCBO: – 45 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 200 mV
Maximum DC Collector Current: 3 A
Pd – Power Dissipation: 2.5 W
Gain Bandwidth Product fT: 145 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: FZT115
Packaging: Cut Tape
Packaging: Reel
Height: 1.65 mm
Length: 6.7 mm
Technology: Si
Width: 3.7 mm
Brand: Diodes Incorporated
Continuous Collector Current: – 3 A
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 0.003951 oz
Manufacturer: Diodes Inc.
MFG Part #: FZT1151ATA
