Description
PMBF170,235 Nexperia MOSFET N-channel TrenchMOS intermed level FET N-Channel 60 V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB RoHS
Specifications
Manufacturer: Nexperia
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 75 V
Id – Continuous Drain Current: 300 mA
Rds On – Drain-Source Resistance: 2.8 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 830 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Nexperia
Configuration: Single
Forward Transconductance – Min: 100 mS
Product Type: MOSFET
Reel:10000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 3 ns
Part # Aliases: 933966340235
Unit Weight: 0.000282 oz
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Manufacturer: NXP
MFG Part #: PMBF170,235
