Description
2N5551TFR ON Semiconductor Bipolar Transistors – BJT 600mA 180V NPN 3-Pin TO-92
Specifications
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 160 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.25 V
Maximum DC Collector Current: 0.6 A
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 2N5551
Packaging: Bulk
Height: 5.33 mm
Length: 5.2 mm
Technology: Si
Width: 4.19 mm
Brand: ON Semiconductor
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 5000
Subcategory: Transistors
Unit Weight: 0.007972 oz
Lifecycle: Obsolete
Manufacturer Part Number: 2N5551TFR
ON Semiconductor
