Description
2N7002,215 NXP Semiconductors MOSFET, N CHANNEL, 60V, 300MA, 3-SOT-23, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:300mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):2.8ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V , RoHS
The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
- High density cell design for extremely low RDS (ON)
- High saturation current capability
- Voltage controlled small signal switch
- Rugged and reliable
Applications
Power Management; Motor Drive & Control; Audio
Manufacturer Part Number: 2N7002,215
NXP
