Description
BC337-16 ITT Semiconductor RF BJT Transistor 45V 0.1A 0.625W TO-92 Through Hole
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
RF Bipolar Transistor Collector Emitter Voltage, Vceo:45V; Transistor Polarity:NPN; Power Dissipation:625mW; C-E Breakdown Voltage:45V; DC Current Gain Min NPN 45V 800mA HFE/250 ; Collector Current:1.0A; Package/Case:TO-92 RoHS Compliant: NO
Current – Collector (Ic) (Max) 800mA
Voltage – Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current – Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 300mA, 1V
Power – Max 625mW
Frequency – Transition 210MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Online Catalog NPN Transistors
Other Names BC337-16
Manufacturer Part Number: BC337-16
Vishay
