Description
BSS84DW-7-F MOSFET Dual P-Channel DualPChannel 50V 130mA 2V at 1mA 10Ω at 100mA,5V 300mW SC-70-6(SOT-363) MOSFET RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Transistor Polarity: P-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 130 mA
Rds On – Drain-Source Resistance: 10 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 800 mV
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 300 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Dual
Height: 1 mm
Length: 2.2 mm
Product: MOSFET Small Signal
Series: BSS84
Transistor Type: 2 P-Channel
Type: Enhancement Mode Field Effect Transistor
Width: 1.35 mm
Brand: Diodes Incorporated
Forward Transconductance – Min: 0.05 S
Product Type: MOSFET
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 0.000212 oz
The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications.
Manufacturer Part Number: BSS84DW-7-F
Diodes Inc.
