Description
IPD530N15N3G Infineon Technologies AG MOSFET, N CH, 150V, 21A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:21A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.044ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power , RoHS
Manufacturer: Infineon
Product Category: MOSFET
RoHS: RoHS Compliant Details
Brand: Infineon Technologies
Id – Continuous Drain Current: 21 A
Vds – Drain-Source Breakdown Voltage: 150 V
Rds On – Drain-Source Resistance: 53 mOhms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 68 W
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Packaging: Reel
Configuration: Single
Fall Time: 3 ns
Minimum Operating Temperature: – 55 C
Rise Time: 9 ns
Series: OptiMOS 3
Factory Pack Quantity: 2500
Tradename: OptiMOS
Manufacturer Part Number: IPD530N15N3G
Manufacturer: Infineon Technologies
