Description
STMicroelectronics (SGS THOMSON) STP3NB60FP N-Channel MOSFET Transistor 600V 2.2A 35W TO-220 Through Hole
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
SPECIFICATIONS
Part #: STP3NB60FP
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: 2.2A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description TO-220FP, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Discontinued
Avalanche Energy Rating (Eas) 100 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 2.2 A
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 3.6 ohm
Manufacturer Part Number: STP3NB60FP
Manufacturer: STMicroelectronics
