Description
IRFBE30PBF Vishay MOSFET, Power, N-Ch, VDSS 800V, RDS(ON) 3 Ohms, ID 4.1A, TO-220AB, PD 125W, VGS +/-20V^
Specifications
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 800 V
Id – Continuous Drain Current: 4.1 A
Rds On – Drain-Source Resistance: 3 Ohms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 78 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Tube
Height: 15.49 mm
Length: 10.41 mm
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: Vishay / Siliconix
Forward Transconductance – Min: 2.5 S
Fall Time: 30 ns
Rise Time: 33 ns
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 0.211644 oz
Manufacturer Part Number: IRFBE30PBF
Manufacturer: Vishay
