GLASS PASSIVATED JUNCTION
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
* Glass passivated junction
MECHANICAL DATA
* Case: Molded plastic black body
* Epoxy: Device hasUL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1A1G
THRU
1A7G
R-1
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 25
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
SYMBOL
V
RRM
V
DC
I
FSM
C
J
T
J
, T
STG
V
RMS
1A1G
1A2G
1A3G
1A4G
1A5G
1A6G
1A7G
UNITS
50
100
400
800
1000
Volts
Volts
Volts
Amps
35
50
420
600
70
100
280
400
600
560
800
700
1000
1.0
25
15
60
Amps
pF
0
C
200
140
200
Operating and Storage Temperature Range
R
θ
J A
I
O
-65 to + 175
0
C/ W
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Full Cycle Average
.375” (9.5mm) lead length at T
L
= 75
o
C
V
F
SYMBOL
I
R
1A1G
1A2G
1A3G
1A4G
1A5G
1A6G
1A7G
U N I T S
1.1
uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
5.0
50
30
.787 (20.0)
MIN.
.106 (2.7)
.126 (3.2)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3)
DIA.
.025 (0.65)
.021 (0.55)
DIA.