SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001
THRU
1N4007
DO-41
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
Dimensions in inches and (millimeters)
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
1.0
30
15
-55 to + 150
Amps
pF
0
C
UNITS
Typical Thermal Resistance
R
θ
J A
50
0
C / W
50
100
200
400
600
800
1000
70
35
140
280
420
700
560
50
200
400
600
800
1000
100
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
V
F
SYMBOL
I
R
UNITS
1.1
5.0
30
uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
50
1.0 (25.4)
MIN.
.166 (4.2)
.205 (5.2)
1.0 (25.4)
MIN.
.107 (2.7)
.080 (2.0)
DIA.
.034 (0.9)
.028 (0.7)
DIA.