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SI LICON DIODES

SI LICON VARISTORS

Bulletin No.

D01ED0

(Oct., 2000)

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The information in this publication has been carefully checked and is believed to be 
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein in 
the interest of improvements in the performance, reliability, or manufacturability of its 
products.  Before placing an order, Sanken advises its customers to obtain the latest 
version of the relevant information to verify that the information being relied upon is 
current.
Application and operation examples described in this catalog are quoted for the sole 
purpose of reference for the use of the products herein and Sanken can assume no 
responsibility for any infringement of industrial property rights, intellectual property rights 
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the 
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the 
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.  
Users of Sanken products are requested to take, at their own risk, preventative measures 
including safety design of the equipment or systems against any possible injury, death, 
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as components 
in general purpose electronic equipment or apparatus (home appliances, office equipment, 
telecommunication equipment, measuring equipment, etc.).  Before placing an order, the 
user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability 
is required (transportation equipment and its control systems, traffic signal control systems 
or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your 
nearest Sanken sales representative to discuss and obtain written confirmation of your 
specifications.
The use of Sanken products without the written consent of Sanken in the applications 
where extremely high reliability is required (aerospace equipment, nuclear power control 
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval 
from Sanken.

CAUTION / WARNING

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1

Contents

2






8

8

11

12

18

25

35

40

42

44

45

46

48

104

105

Selection Guide

           Rectifier Diodes
           Fast-Recovery Rectifier Diodes
           Ultra-Fast-Recovery Rectifier Diodes
           Schottky Barrier Diodes
           Damper Diodes / High-Voltage Rectifier Diodes
           Avalanche Diodes / Power Zener Diodes / Silicon Varistors

Symbols and Terms / 

t

rr Measurement Circuit

Taping Specifications

Marking Guide

Rectifier Diodes

Fast-Recovery Rectifier Diodes

Ultra-Fast-Recovery Rectifier Diodes

Schottky Barrier Diodes

Damper Diodes

High-Voltage Rectifier Diodes

Avalanche Diodes

Power Zener Diodes

Silicon Varistors

Characteristic Curves

Application Notes

Product Index by Part Number

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2

Selection Guide

Rectifier Diodes

1 in one-package

100

1.0

45

EM 1Y

Axial (E1)

12

3.0

200

RM 4Y

Axial (R4)

0.9

30

SFPM-52

Surface Mount (SFP)

45

SFPM-62

35

AM01Z

Axial (A0)

1.0

45

EM01Z

Axial (E0)

200

45

EM 1Z

Axial (E1)

13

50

RM 1Z

Axial (R1)

1.2

100

RM 2Z

Axial (R2)

80

RO 2Z

1.5

120

RM 10Z

Axial (R1)

3.0

200

RM 4Z

Axial (R4)

0.9

30

SFPM-54

Surface Mount (SFP)

45

SFPM-64

35

AM01

Axial (A0)

1.0

45

EM01

Axial (E0)

45

EM 1

Axial (E1)

400

50

RM 1

Axial (R1)

14

80

EM 2

Axial (E1)

1.2

150

RM 10

Axial (R1)

100

RM 2

Axial (R2)

80

RO 2

2.5

150

RM 3

Axial (R3)

3.0

200

RM 4

Axial (R4)

35

AM01A

Axial (A0)

1.0

45

EM01A

Axial (E0)

45

EM 1A

Axial (E1)

50

RM 1A

Axial (R1)

80

EM 2A

Axial (E1)

600

150

RM 10A

Axial (R1)

15

1.2

100

RM 11A

100

RM 2A

Axial (R2)

80

RO 2A

2.5

150

RM 3A

Axial (R3)

3.0

200

RM 4A

Axial (R4)

3.2

350

RM 4AM

0.8

40

RM 1B

Axial (R1)

1.0

35

EM 1B

Axial (E1)

80

EM 2B

150

RM 10B

Axial (R1)

800

1.2

100

RM 11B

16

100

RM 2B

Axial (R2)

80

RO 2B

2.5

150

RM 3B

Axial (R3)

3.0

150

RM 4B

Axial (R4)

0.8

40

RM 1C

Axial (R1)

1.0

35

EM 1C

Axial (E1)

100

RM 11C

Axial (R1)

1000

1.2

100

RM 2C

Axial (R2)

17

80

RO 2C

2.0

150

RM 3C

Axial (R3)

3.0

150

RM 4C

Axial (R4)

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

2 in one-package

100

20

120

FMM-31S, R

FM80

12

200

10

100

FMM-22S, R

TO-220F

13

20

120

FMM-32S, R

FM80

400

10

100

FMM-24S, R

TO-220F

14

20

120

FMM-34S, R

FM80

600

10

100

FMM-26S, R

TO-220F

15

20

120

FMM-36S, R

FM80

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

Bridge

100

4.0

80

RBV-401

RBV-40

12

6.0

100

RBV-601

RBV-60

4.0

80

RBV-402

RBV-40

200

6.0

120

RBV-602

RBV-60

13

10     

80

RBV-4102

RBV-40

400

4.0

80

RBV-404

RBV-60

14

6.0

150

RBV-604

RBV-40

4.0

80

RBV-406

4.0

120

RBV-406H

RBV-40

4.0

120

RBV-406M

6.0

150

RBV-606

600

6.0

140

RBV-606H

15

13     

80

RBV-1306

RBV-60

15     

200

RBV-1506

15     

150

RBV-1506S

25     

350

RBV-2506

800

4.0

100

RBV-408

RBV-40

16

6.0

170

RBV-608

RBV-60

1000

4.0

100

RBV-40C

RBV-40

17

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

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3

Fast-Recovery Rectifier Diodes

1 in one-package

2 in one-package

1.2

25

0.2

0.08

EU 2YX

Axial (E1)

1.5

30

0.2

0.08

RU 2YX

Axial (R1)

2.0

50

0.2

0.08

RU 3YX

Axial (R2)

100

3.5

100

0.4

0.18

RU 30Y

Axial (R3)

18

70

0.4

0.18

RU 4Y

Axial (R4)

4.0

100

0.2

0.08

RU 4YX

10.0  

100

0.2

0.08

FMU-G2YXS

TO-220F-2Pin

  

0.25

15

0.4

0.18

EU01Z

Axial (E0)

15

0.4

0.18

EU 1Z

Axial (E1)

0.5

15

0.4

0.18

AU01Z

Axial (A0)

20

1.5

0.6

AS01Z

0.6

30

4.0

1.3

EH 1Z

Axial (E1)

15

0.4

0.18

RF 1Z

Axial (R1)

35

4.0

1.3

RH 1Z

200

0.7

30

1.5

0.6

ES 1Z

Axial (E1)

19

30

1.5

0.6

ES01Z

Axial (E0)

0.8

25

0.4

0.18

AU02Z

Axial (A0)

15

0.4

0.18

EU02Z

Axial (E0)

1.0

15

0.4

0.18

EU 2Z

Axial (E1)

20

0.4

0.18

RU 2Z

Axial (R1)

3.5

80

0.4

0.18

RU 30Z

Axial (R3)

70

0.4

0.18

RU 4Z

Axial (R4)

15

0.4

0.18

EU01

Axial (E0)

  0.25

15

0.4

0.18

EU 1

Axial (E1)

15

0.4

0.18

RU 1

Axial (R1)

0.5

15

0.4

0.18

AU01

Axial (A0)

20

1.5

0.6

AS01 

0.6

30

4.0

1.3

EH 1

Axial (E1)

15

0.4

0.18

RF 1

Axial (R1)

35

4.0

1.3

RH 1

0.7

30

1.5

0.6

ES01

Axial (E0)

400

30

1.5

0.6

ES 1

Axial (E1)

20

0.8

25

0.4

0.18

AU02

Axial (A0)

1.0

15

0.4

0.18

EU02

Axial (E0)

15

0.4

0.18

EU 2

Axial (E1)

1.1

20

0.4

0.18

RU 2M

Axial (R1)

1.5

20

0.4

0.18

RU 3

Axial (R2)

50

0.4

0.18

RU 3M

2.0

200

0.4

0.18

RU 30

Axial (R3)

3.0

150

0.4

0.18

RU 31

50

0.4

0.18

RU 4

Axial (R4)

3.5

70

0.4

0.18

RU 4M

15

0.4

0.18

EU01A

Axial (E0)

  0.25

15

0.4

0.18

EU 1A

Axial (E1)

15

0.4

0.18

RU 1A

Axial (R1)

0.5

15

0.4

0.18

AU01A

Axial (A0)

20

1.5

0.6

AS01A

0.6

30

4.0

1.3

EH 1A

Axial (E1)

15

0.4

0.18

RF 1A

Axial (R1)

35

4.0

1.3

RH 1A

30

1.5

0.6

ES01A

Axial (E0)

0.7

30

1.5

0.6

ES 1A

Axial (E1)

30

1.5

0.6

RS 1A

Axial (R1)

0.8

25

0.4

0.18

AU02A

Axial (A0)

600

15

0.4

0.18

EU02A

Axial (E0)

21

1.0

15

0.4

0.18

EU 2A

Axial (E1)

20

0.4

0.18

RU 2

1.1

20

0.4

0.18

RU 2AM

Axial (R1)

20

0.4

0.18

RU 20A

1.5

20

0.4

0.18

RU 3A

Axial (R2)

50

0.4

0.18

RU 3AM

2.0

200

0.4

0.18

RU 30A

Axial (R3)

3.0

150

0.4

0.18

RU 31A

50

0.4

0.18

RU 4A

Axial (R4)

3.5

70

0.4

0.18

RU 4AM

5.0

30

0.4

0.18

FMU-G16S

TO-220F-2Pin

10.0  

40

0.4

0.18

FMU-G26S

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

  0.25

15

0.4

0.18

RU 1B

0.6

15

0.4

0.18

RF 1B

35

4.0

1.3

RH 1B

Axia (R1)

800

0.7

30

1.5

0.6

RS 1B

22

1.0

20

0.4

0.18

RU 2B

1.1

20

0.4

0.18

RU 3B

Axial (R2)

3.0

50

0.4

0.18

RU 4B

Axial (R4)

0.2

15

0.4

0.18

RU 1C

0.6

35

4.0

1.3

RH 1C

Axial (R1)

1000

0.8

20

0.4

0.18

RU 2C

23

1.5

20

0.4

0.18

RU 3C

Axial (R2)

2.5

50

0.4

0.18

RU 4C

Axial (R4)

1500

0.5

20

1.5

0.6

ES01F

Axial (E0)

20

1.5

0.6

ES 1F

Axial (E1)

24

2000

0.2

20

4.0

1.3

RC 2

Axial (R1)

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

100

10.0

40

0.4

0.18

FMU-21S, R

TO-220F

18

  5.0

30

0.4

0.18

FMU-12S, R

TO-220F

200

10.0

40

0.4

0.18

FMU-22S, R

19

20.0

80

0.4

0.18

FMU-32S, R

FM80

 

  5.0

30

0.4

0.18

FMU-14S, R

TO-220F

400

10.0

40

0.4

0.18

FMU-24S, R

20

20.0

80

0.4

0.18

FMU-34S, R

FM80

  5.0

30

0.4

0.18

FMU-16S, R

TO-220F

600

10.0

40

0.4

0.18

FMU-26S, R

21

20.0

80

0.4

0.18

FMU-36S, R

FM80

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

t

rr  1

(

µ

s)

t

rr  2

(

µ

s)

t

rr  1

(

µ

s)

t

rr  2

(

µ

s)

t

rr  1

(

µ

s)

t

rr  2

(

µ

s)

t

rr  1 :  I

= I

F

     90% Recovery Point

t

rr  2 :  I

= 2•I

F

 75% Recovery Point

Selection Guide

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4

Ultra-Fast-Recovery Rectifier Diodes

1 in one-package

1.0

25

100

50

AG01Y

Axial (A0)

1.1

30

100

50

EG01Y

Axial (E0)

70

30

100

50

EG 1Y

Axial (E1)

25

1.5

50

100

50

RG 10Y

Axial (R1)

50

100

50

RG 2Y

Axial (R2)

3.5

100

100

50

RG 4Y

Axial (R4)

0.7

15

100

50

AG01Z

Axial (A0)

0.8

15

100

50

EG01Z

Axial (E0)

15

100

50

EG 1Z

Axial (E1)

0.9

25

50

35

SFPL-52

Surface Mount (SFP)

25

50

35

SFPL-62

1.0

25

50

35

AL01Z

Axial (A0)

25

100

50

EN 01Z

Axial (E0)

1.2

50

100

50

RG 10Z

Axial (R1)

50

100

50

RG 2Z

Axial (R2)

30

30

25

SFPX-62

Surface Mount (SFP)

1.5

25

40

30

EL02Z

Axial (E0)

20

50

35

EL 1Z

Axial (E1)

60

100

50

RN 1Z

Axial (R1)

30

50

35

RL 10Z

200

2.0

30

50

35

RL 2Z

Axial (R2)

26

70

100

50

RN 2Z

80

30

25

RX 3Z

Axial (R3)

3.0

80

100

50

RN 3Z

80

100

50

RG 4Z

Axial (R4)

50

30

25

SPX-G32S

Surface Mount (D Pack)

80

50

35

RL 3Z

Axial (R3)

3.5

80

50

35

RL 4Z

Axial (R4)

120

100

50

RN 4Z

65

40

30

FML-G12S

5.0

100

100

50

FMN-G12S

65

150

70

FMP-G12S

TO-220F-2Pin

65

30

25

FMX-G12S

10.0

150

30

25

FMX-G22S

150

40

30

FML-G22S

300

2.0

30

30

25

SFPX-63

Surface Mount (SFP)

28

5.0

70

50

35

FML-G13S

TO-220F-2Pin

0.7

15

100

50

AG01

Axial (A0)

0.8

15

100

50

EG01

Axial (E0)

15

100

50

EG 1

Axial (E1)

1.2

50

100

50

RG 10

Axial (R1)

50

100

50

RG 2

Axial (R2)

400

1.5

25

50

35

EL 1

Axial (E1)

29

2.0

40

50

35

RL 2

Axial (R2)

3.0

80

100

50

RG 4

Axial (R4)

3.5

80

50

35

RL 3

Axial (R3)

70

50

35

FML-G14S

5.0

70

100

50

FMN-G14S

TO-220F-2Pin

70

30

25

FMX-G14S

0.5

15

100

50

AG01A

Axial (A0)

10

100

50

EG01A

Axial (E0)

0.6

10

100

50

EG 1A

Axial (E1)

1.0

50

100

50

RG 10A

Axial (R1)

50

100

50

RG 2A

Axial (R2)

1.2

30

50

35

RL 2A

600

2.0

60

50

35

RL 3A

Axial (R3)

30

50

100

50

RG 4A

Axial (R4)

3.0

80

50

35

RL 4A

4.0

50

100

50

FMG-G26S

50

50

35

FML-G16S

TO-220F-2Pin

5.0

50

100

50

FMN-G16S

50

30

25

FMX-G16S

8.0

80

100

50

FMG-G36S

FM80-2Pin

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

  

100

65

35

FML-G26S

600

10.0   100

50

30

FMD-G26S

TO-220F-2Pin

30

  

100

30

25

FMX-G26S

800

3.0

50

70

35

FMC-G28S

TO-220F-2Pin

32

5.0

60

70

35

FMC-G28SL

0.2

5

200

80

AP01C

Axial (A0)

5

200

80

EP01C

Axial (E0)

0.4

10

100

50

RU 1P

Axial (R1)

1000

0.5

10

100

50

EG01C

Axial (E0)

33

0.7

10

100

50

RG 1C

Axial (R1)

2.0

60

100

50

RG 4C

Axial (R4)

3.0

30

100

50

FMG-G2CS

TO-220F-2Pin

5.0

60

150

70

FMG-G3CS

FM80-2Pin

2000

0.1

5

200

80

RP 1H

Axial (R1)

34

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

2 in one-package

35

30

25

FMX-12S

5.0

35

40

30

FML-12S

TO-220F

35

100

50

FMG-12S, R

6.0

80

30

25

SPX-62S

Surface Mount (D Pack)

65

30

25

FMX-22S

200

10.0

65

40

30

FML-22S

TO-220F

26

65

100

50

FMG-22S, R

15.0

100

30

25

FMX-22SL

150

30

25

FMX-32S

20.0

150

40

30

FML-32S

FM80

150

100

50

FMG-32S,R

5.0

40

50

35

FML-13S

35

100

50

FMG-13S, R

70

50

35

FML-23S

TO-220F

300

10.0

65

100

50

FMG-23S, R

28

65

30

25

FMX-23S

100

50

35

FML-33S

20.0

150

100

50

FMG-33S, R

FM80

100

30

25

FMX-33S

5.0

40

50

35

FML-14S

35

100

50

FMG-14S, R

TO-220F

400

8.0

65

100

50

FMG-24S, R

29

10.0

70

50

35

FML-24S

16.0

100

100

50

FMG-34S, R

FM80

20.0

100

50

35

FML-34S

3.0

50

70

35

FMC-26U

TO-220F

600

6.0

50

100

50

FMG-26S, R

30

15.0

80

100

50

FMG-36S, R

FM80

20.0

100

65

35

FML-36S

800

3.0

50

70

35

FMC-28U

TO-220F

31

1200

3.0

50

70

35

FMC-26UA

TO-220F-2Pin

34

1600

3.0

50

70

35

FMC-28UA

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

Bridge

200

4.0

80

40

30

RBV-402L

RBV-40

26

6.0

100

50

35

RBV-602L

RBV-60

V

RM

(V)

I

F

(A)

I

FSM

(A)

Part Number

Package

Page

t

rr  1 :  I

= I

F

     90% Recovery Point

t

rr  2 :  I

= 2•I

F

 75% Recovery Point

t

rr  1

(ns)

t

rr  2

(ns)

t

rr  1

(ns)

t

rr  2

(ns)

t

rr  1

(ns)

t

rr  2

(ns)

t

rr  1

(ns)

t

rr  2

(ns)

Selection Guide

Allegro_Silicon_Diodes-html.html
background image

5

1 in one-package

0.47

MI1A3

Surface Mount (Small)

0.39

MI2A3

0.36

SFPA-53

Surface Mount (SFP)

1.0

0.45

SFPJ-53

0.55

AK 03

Axial (A0)

0.36

EA 03

Axial (E0)

0.55

EK 03

1.5

0.55

EK 13

Axial (E1)

1.7

0.55

RK 13

Axial (R1)

30

0.36

SFPA-63

35

2.0

0.45

SFPJ-63

Surface Mount (SFP)

0.55

SFPE-63

0.36

RA 13

Axial (R1)

2.5

0.55

RK 33

Axial (R2)

0.36

SFPA-73

Surface Mount (SFP)

3.0

0.45

SFPJ-73

0.45

RJ 43

Axial (R4)

0.55

RK 43

5.0

0.45

SPJ-G53S

Surface Mount (D Pack)

0.5

0.58

SSB-14

Surface Mount (SOT23)

0.55

SFPB-54

Surface Mount (SFP)

1.0

0.55

AK 04

Axial (A0)

0.58

AW 04

0.55

EK 04

Axial (E0)

1.5

0.55

SFPB-64

Surface Mount (SFP)

0.55

EK 14

Axial (E1)

1.7

0.55

RK 14

Axial (R1)

40

2.0

0.50

SFPB-74

Surface Mount (SFP)

36

0.60

SFPE-64

2.5

0.55

RK 34

Axial (R2)

0.55

SPB-G34S

Surface Mount (D Pack)

3.0

0.55

RK 44

Axial (R4)

0.55

FMB-G14

TO-220F-2Pin

5.0

0.55

SPB-G54S

Surface Mount (D Pack)

0.55

FMB-G14L

TO-220F-2Pin

10.0  

0.55

FMB-G24H

0.62

SFPB-56

Surface Mount (SFP)

0.7

0.62

AK 06

Axial (R0)

0.62

EK 06

Axial (E0)

1.5

0.62

EK 16

Axial (E1)

0.62

RK 16

Axial (R1)

60

0.62

SFPB-76

Surface Mount (SFP)

38

2.0

0.69

SFPB-66

0.62

RK 36

Axial (R2)

3.5

0.62

RK 46

Axial (R4)

5.0

0.62

FMB-G16L

TO-220F-2Pin

6.0

0.70

SPB-G56S

Surface Mount (D Pack)

0.81

SFPB-59

Surface Mount (SFP)

0.7

0.81

AK 09

Axial (A0)

0.81

EK 09

Axial (E0)

0.81

SFPB-69

Surface Mount (SFP)

90

1.5

0.81

EK 19

Axial (E1)

39

0.81

RK 19

Axial (R1)

2.0

0.81

RK 39

Axial (R2)

3.5

0.81

RK 49

Axial (R4)

4.0

0.81

FMB-G19L

TO-220F-2Pin

V

RM

(V)

I

O

(A)

V

F

(A)

Part Number

Package

Page

  6.0

0.45

SPJ-63S

Surface Mount (D Pack)

30

10.0

0.45

FMJ-23L

35

20.0

0.45

FMJ-2203

TO-220F

30.0

0.45

FMJ-2303

  4.0

0.55

FMB-24

TO-220F

  

6.0

0.55

SPB-64S

Surface Mount (D Pack)

  

0.55

FMB-24M

TO-220F

0.55

FMW-24L

10.0

0.55

FMB-24L

TO-220F

0.60

FME-24L

12.0

0.58

FMB-34S

FM80

36

40

0.60

MPE-24H

TO-220S

0.55

FMW-24H

15.0

0.55

FMB-24H

TO-220F

0.60

FME-24H

0.55

FMB-34

FM80

20.0

0.55

FMB-2204

TO-220F

30.0

0.55

FMB-2304

0.55

FMB-34M

FM80

  4.0

0.62

FMB-26

TO-220F

  6.0

0.65

SPB-66S

Surface Mount (D Pack)

10.0

0.62

FMB-26L

TO-220F

60

15.0

0.62

FMB-36

FM80

38

20.0

0.7  

FMB-2206

TO-220F

30.0

0.7  

FMB-2306

0.62

FMB-36M

FM80

  4.0

0.81

FMB-29

TO-220F

  8.0

0.81

FMB-29L

90

15.0

0.81

FMB-39

FM80

20.0

0.85

MPE-29G

TO-220S

39

0.81

FMB-39M

FM80

100

20.0

0.85

FME-220A

TO-220F

30.0

0.85

FME-230A

V

RM

(V)

I

O

(A)

V

F

(A)

Part Number

Package

Page

2 in one-package

Schottky Barrier Diodes

60

  4.0

0.62

RBV-406B

RBV-40

38

V

RM

(V)

I

O

(A)

V

F

(A)

Part Number

Package

Page

Bridge

Selection Guide

Allegro_Silicon_Diodes-html.html
background image

6

1300

1.0

4.0

1.3

RH 2D

Axial (R2)

0.8

4.0

1.3

RH 10F

Axial (R1)

1.0

4.0

1.3

RH 2F

Axial (R2)

2.0

2.0

0.8

RS 3FS

Axial (R3)

For TV

1500

4.0

1.3

RH 3F

2.5

4.0

1.3

RH 4F

Axial (R4)

1.0

0.4

RS 4FS

10.0

2.0

0.8

FMV-G5FS

TO-3PF-2Pin

1600

2.5

4.0

1.3

RH 3G

Axial (R3)

1800

10.0

1.8

0.7

FMR-G5HS

TO-3PF-2Pin

1300

1.5

0.4

  0.18

RU 4D

Axial (R4)

2.5

0.4

  0.18

RU 4DS

40

2.0

0.7

0.3

RP 3F

Axial (R3)

5.0

0.7

0.3

FMP-G2FS

0.7

0.3

FMQ-G1FS

For CRT Display

1500

0.5

0.2

FMQ-G2FS

TO-220F-2Pin

0.5

0.2

FMQ-G2FMS

10.0

0.6

  0.25

FMU-G2FS

1.2

0.4

FMQ-G2FLS

0.5

0.2

FMQ-G5FMS

1700

10.0

0.5

0.2

FMQ-G5GS

TO-3PF-2Pin

1800

8.0

1.0

0.4

FMP-G5HS

1300

0.5

0.1

  0.05

RG 2A2

Axial (R2)

1600

1.0

  0.07

    0.035

RC 3B2

Axial (R3)

V

RM

(V)

I

F

(A)

Part Number

Application

Package

Page

For TV

1500/600

5.0

4.0/0.4

1.3/0.18

FMV-3FU

TO-3PF

1700/600

5.0

2.0/0.4

0.8/0.18

FMV-3GU

0.7/0.1

0.3/0.05

FMP-3FU

TO-3PF

1500/600

5.0

0.7/0.1

0.3/0.05

FMP-2FUR

41

For CRT Display

  2.0/0.15

0.8/0.07

FMQ-2FUR

TO-220F

1.0/0.1

FMT-2FUR

1700/800

5.0

  0.7/0.07

0.3/0.04

FMQ-3GU

TO-3PF

V

RM

(V)

I

F

(A)

Part Number

Application

Package

Page

Damper Diodes

Damper Diodes for Diode Moduration

  2

2

SHV-02

16

0.18

For General Purpose

  3

2

SHV-03S

16

0.18

  3

2

SHV-03

16

0.18

10

2

SHV-10

40

0.18

12

2

SHV-12

45

0.18

For General FBT

14

2

SHV-14

55

0.18

16

2

SHV-16

60

0.18

20

2

SHV-20

75

0.18

24

2

SHV-24

75

0.18

  6

2

SHV-06EN

26

0.15

0.2

  8

2

SHV-08EN

30

0.15

0.2

Axial

42

10

2

SHV-10EN

38

0.15

0.2

12

2

SHV-12EN

45

0.15

0.2

  8

2

SHV-08DN

30

0.15

0.2

10

2

SHV-10DN

38

0.15

0.2

12

2

SHV-12DN

45

0.15

0.2

For General Type Microwave Oven

  9

350

HVR-1X-40B

9

 

 

For Inverter Type Microwave Oven

  8

350

UX-F5B

14

0.15

     2.5

30

SHV-05JS

5

V

Z

 = 2.6 to 5.0kV

For Automotive Ignition Coil

  4

30

SHV-08J

8

V

Z

 = 4.5 to 8.0kV

15

30

SHV-30J

30

V

Z

 = 16.0 to 30.0kV

V

RM

(kV)

V

F

 max

(V)

t

rr (

µ

s)  I

F

 = I

RP

Ta =  25ºC

Ta =  100ºC

I

F (AV)

(mA)

Part Number

Application

Package

Page

High-Voltage Rectifier Diodes

*

 TV High Voltage Rectifier Capacitive Load,  Tc    100

°

C

*

*

*

*

*

*

*

*

*

*

*

*

*

t

rr  1 :  I

= I

F

     90% Recovery Point

t

rr  2 :  I

= 2•I

F

 75% Recovery Point

t

rr  1

(

µ

s)

t

rr  2

(

µ

s)

t

rr  1

(

µ

s)

t

rr  2

(

µ

s)

Selection Guide

For CRT Display 
Compensation

For High Frequency 
Multi-layer FBT

For Ultra-High Frequency 
Multi-layer FBT

Allegro_Silicon_Diodes-html.html
background image

7

  27 to   33

  20

30

RZ1030

  34 to   40

  28

30

RZ1040

  50 to   60

  40

30

RZ1055

  60 to   70

  50

30

RZ1065

Axial (R1)

  90 to 110

  80

30

RZ1100

115 to 135

105

30

RZ1125

44

140 to 160

125

30

RZ1150

EZ1050

Axial (E0)

150 to 165

   138.7

30

RZ1155

165 to 185

150

30

RZ1175

Axial (R1)

185 to 215

180

30

RZ1200

V

Z

(V)

V

RDC

(V)

I

TSM

(A)

Part Number

Package

Page

Avalanche Diodes with built-in Thyristor

28

±

3.0

1500

20

65.0

PZ 628

Axial

28

±

3.0

50

20

2.0

SFPZ-68

Surface Mount (SFP)

45

36

±

3.6

 450

30

11.0

SPZ-G36

Surface Mount (D Pack)

 

  1.5 max

400

15

VR-60SS

  

  2.3

±

0.25

150

     7.5

VR-61SS

Symmetrical type

  4 max

150

SV-2SS

Axial (E0)

46

  

  2 max

250

SV-3SS

  

  1.8

±

0.2

150

SV-4SS

  

  1.2

±

0.2

200

30

SV 02YS

  

  1.8

±

0.2

150

16

SV 03YS

Unsymmetrical type

  2.35

±

0.25

100

12

SV 04YS

Axial (E0)

47

  

  3.0

±

0.3

  80

10

SV 05YS

  

  3.5

±

0.35

  70

  8

SV 06YS

V

Z

(V)

V

DC

(V)

P

R

(W)

I

ZSM

(A)

I

F

(mA)

V

F

(V)

I

FSM

(A)

Part Number

Package

Page

Power Zener Diodes

Part Number

Division

Package

Page

Silicon Varistors

Selection Guide

Allegro_Silicon_Diodes-html.html
background image

8

Symbols and Terms / 

t

rr Measurement Circuit

Taping Specifications

Symbols and Terms

trr (Reverse Recovery Time) Measurement Circuit

Taping Dimensions (mm)

Package Dimensions (mm) and Markings

Quantity

Taping name

The suffix “V” 
is added to the
Part Number

V

Axial taping

Reel

The suffix “V1” 
is added to the
Part Number

V1

Axial taping

Ammunition (Ammo) pack

V

RSM

V

RM

V

P-P

V

R

V

F

V

B

I

F

I

F (AV)

I

FSM

I

RSM

I

R

I

RP

I

R (H)

I

Z

I

ZSM

Ta

Tj

Topr

Tc

Tstg

t

rr

Ct

Rth (j-   )

Rth (j-c)

rz

Rz

P

F (AV)

I

2

t

Peak Reverse Surge Voltage

Peak Reverse Voltage

Reverse Voltage (Peak to Peak)

Reverse Voltage

Foward Voltage

Breakdown Voltage

Foward Current

Average Foward Current

Peak Foward Surge Current

Peak Reverse Surge Current

Reverse Current

Peak Reverse Current 

Reverse Current (Hight Temperature)

Avalanche Current

Allowable Avalanche Current

Ambient Temperature

Junction Tmeperature

Operating Ambient Temperature

Case Temperature

Storage Temperature

Reverse Recovery Time

Total Capacitance Between Terminals

Thermal Resistance, Junction to Lead

Thermal Resistance, Junction to Case

Temperature Coefficient of Breakdown Voltage

Equivalent Resistance of Breakdown region

Average Forward Power Dissipation

I

2

t Limitting Value

20

µ

s

200

µ

s

100

µ

F specimen

100

10

mA

10

mA

I

F

I

RP

0.

1

I

RP

t

rr

20

µ

s

200

µ

s

100

µ

F specimen

10

100

mA

100

mA

I

F

I

RP

0.

1

I

RP

t

rr

20

µ

s

200

µ

s

100

µ

F specimen

4

500

mA

500

mA

I

F

I

RP

0.

1

I

RP

t

rr

I

=

 

I

RP 

=

 

10mA to 1mA

I

=

 

I

RP 

=

 

100mA to 10mA

I

=

 

I

RP 

=

 

500mA to 50mA

1

2

2

+0.5

–1.0

+5

  0

+1

  0

+5

  0

0.5max

1.0

5.08

+0.38

0.5max

max 52.0

(Blue)

(White)

6.0

6.0

0.5

340

Core Flange

81

75

25

83

Part No., Lot No.,
Quantity

15

29

75

Fixture

±

2

±

2

±

2

±

2

±

1

±

1

±

2

±

0.1

5,000 pcs/reel

2.7    body
2.4    body

(4    body)

3,000 pcs/reel

0.5max

1.0

5.08

0.5max

52.0

6.0

6.0

max

0.5

(Blue)

(White)

+5

  0

+1

  0

+5

  0

+0.5

–1.0

+0.38

Broken lines: 
perforation

255max

77m

ax

77max

Part No., Lot No., Quantity

2,000 pcs/box

(2.7    body)

3,000 pcs/box

(2.4    body)

1,000 pcs/box

(4    body)

Allegro_Silicon_Diodes-html.html
background image

9

Taping Specifications

Taping Dimensions (mm)

Taping name

Package Dimensions (mm) and Markings

Quantity

The suffix “WS” 
is added to the
Part Number

The suffix “WK” 
is added to the
Part Number

WK

WS

The suffix “W” 
is added to the
Part Number

W

The suffix “V4” 
is added to the
Part Number

V4

The suffix “V3” 
is added to the
Part Number

V3

The suffix “V0” 
is added to the
Part Number

V0

Radial taping
(for A0 series)

Radial taping
(for A0 series)

Radial taping

Axial taping

Axial taping

Axial taping

Ammunition (Ammo) pack

Reel

Ammunition (Ammo) pack

Ammunition (Ammo) pack

Ammunition (Ammo) pack

2,500 pcs/box

(2.4    body)

1,000 pcs/box

(5.2    body)

1,500 pcs/reel

(5.2    body)

2,000 pcs/box

(2.7    body)

3,000 pcs/box

(2.4    body)

4,000 pcs/box

2.7    body
0.6    lead only

0.5max

1.0

5.08

0.5max

max 26.0

6.0

6.0

0.5

(Blue)

(White)

+5

  0

+1

  0

+5

  0

+0.5

–1.0

+0.38

0.5max

1.0

10

0.5max

52.0

6.0

6.0

max

1.0

(Blue)

(White)

+5

  0

+1

  0

+5

  0

+0.5

–1.0

±

0.2

0.5max

1.0

10

0.5max

52.0

6.0

6.0

max

1.0

(Blue)

(White)

+5

  0

+1

  0

+5

  0

+0.5

–1.0

±

0.2

4.0

6.35

12.7

2.6max

27.5

16.0

(11.5)

max

4.2

12.7

1.0

max

12.7

3.85

5.0

12.7

3.0

max

12.5

m

in

9.0

18.0

0

0.7

±

0.5

±

1.3

±

1.0

±

1.0

±

0.2

±

0.5

±

0.3

±

2.0

±

0.7

±

0.2

±

1.0

±

0.5

±

0.5

+1.0 –

0.5

3.85

4.0

5.0

12.7

0.7

12.5

m

in

11max

9.0

18.0

0

12.7

6.35

1.0

max

18.0

±

2.0

±

0.2

±

0.2

±

0.5

±

0.3

±

0.7

±

1.0

±

1.3

+0.8

–0.2

+1.0 –

0.5

+0.5 –

0

0.7

5.0

5.0

2.75

19.8

16.5

11.0

4.0

3.0

12.7

3.85

12.7

0

1.5

22.2

9.0

12.5

m

in

18.0

30

°

±

2.0

±

0.2

±

0.5

±

0.3

±

1.0

±

1.0

±

1.0

±

0.5

±

0.2

±

0.3

±

0.7

±

1.0

+0.8

– 0

+1.0 –

0.5

+1.0 –

0.5

ANODE

CATHOD

E

Part No., Lot No., 
Quantity

150max

45max

340max

Broken lines: 
perforation

Part No., Lot No., Quantity

ANODE

CATHO

DE

340max

140max

55m

ax

Broken lines: 
perforation

77max

Trade
Mark

Part No., Lot No., Quantity

255max

120max

340

Core Flange

81

75

25

83

Part No., Lot No.,
Quantity

15

29

75

Fixture

±

2

±

2

±

0.1

±

2

±

2

±

1

±

1

±

2

Broken lines: 
perforation

Part No., Lot No., Quantity

95max

255max

51max

Allegro_Silicon_Diodes-html.html
background image

10

Taping Specifications for Surface Mount

Taping Dimensions (mm)

Taping name

Package Dimensions (mm) and Markings

Quantity

Taping Dimensions (mm)

Taping name

Package Dimensions (mm) and Markings

Quantity

The suffix “VR” 
is added to the
Part Number

The suffix “VR” 
is added to the
Part Number

VR

VR

The suffix “VL” 
is added to the 
Part Number

VL

Taping Specifications for High-Voltage Diodes

The suffix “VD” 
is added to the
Part Number

VD

The suffix “V1” 
is added to the
Part Number

V1

Axial taping

Axial taping

The suffix “V” 
is added to the 
Part Number

V

Emboss taping

Reel

(1) The cathode is the right side of the feeding direction.
(2) The diodes are put inside the case with the electrode side down.
(3) A 150 to 200mm leader tape is provided at the beginning of the tape.
(4) 10 or more holes are left empty at the beginning and the end of each tape.
(5) Taping of diodes with electrodes facing the direction is also available (taping name: VL)

1.5

+0.1

–0

2.0

±

0.1

12.0

±

0.1

4.9 max

0.4

±

0.1

10.8

±

0.1

21.05

±

0.1

13.9

±

0.1

4.0

±

0.1

3.0 max

11.5

±

0.1

24.0

±

0.3

1.75

±

0.1

4

(

6.0)

(2.0

)

(40

º)

(120

º)

±

0.5

(R130)

±

1

100
330

±

2

31 max

25.5

±

0.5

2

±

0.5

2

±

0.5

13

±

0.5

R50

±

1

(

R5)

(R5)

Feeding direction

13

2.0

21

R1.0

178

14

2.0

65

Part No., Lot No.,
Quantity

±

0.5

±

0.5

±

0.8

±

2

±

1.5

±

0.5

4.5

±

0.2

2.0min

1.35

±

0.4

±

0.4

1.35

5.1

+0.4

–0.1

2.6

±

0.2

2.05

±

0.2

±

0.1

±

0.1

+0.1

–0

4.0

2.0

3.1

2.6

12.0

±

0.3

±

0.05

5.5

1

.75

±

0.1

4.0

5.5

1.5

Feeding direction

0.05

+0.1 –

0.05

1.1

1.5

±

0.2

±

0.2

Part No.

Lot No.

Quantitiy

Taping name

(type)

Material
Disk part: 
      Cardboard
Axial core part: 
      Foaming polystyrole

4

(6.0)

(2.0)

(40

°

)

(120

°

)

R95

±

1

80

±

1

330

±

2

23

max

17.5

±

0.5

2

±

0.5

2

±

0.5

13

±

1

R40

±

0.5

±

1

Feeding direction

Feeding direction

1.5

2.0

±

0.1

8.0

±

0.1

3.4 max

0.3

±

0.1

6.8

±

0.1

13.5

±

0.1

10.6

±

0.1

4.0

±

0.1

1.6

7.5

±

0.1

16.0

±

0.3

1.75

±

0.1

+0.1

–0

+0.1

–0

3,000 pcs/reel

1,800 pcs/reel

3,000 pcs/reel

1,000 pcs/reel

5,000 pcs/reel

8,000 pcs/reel

Part No.

Quantity

Lot No.

29

±

1.5

75

±

1.5

340

±

2

25

±

1

6

±

1.0

6

±

1.0

5

±

0.5

58

1.0 max

1.2

max

±

1

29

±

1.5

75

±

1.5

340

±

2

25

±

1

Part No.

Quantity

Lot No.

6

±

1.0

6

±

1.0

3.5

±

0.5

58

1.0 max

1.0

max

±

1

LD Pack

D Pack

SFP

Allegro_Silicon_Diodes-html.html
background image

Part Number (abbreviation)
The AM01 is indicated as “M.” 
Class
Z: 200V    None: 400V    A: 600V
B: 800V    C: 1000V
Manufacturing date
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Cathode band: Continuous band
Color of markings: White
                              (Yellow for AU02 series)

Part Number (abbreviation)
EM01, EM2, EM1 are indicated as MO, M2
and M1, respectively.
Class
Z: 200V    None: 400V    A: 600V
B: 800V    C: 1000V    F: 1500V
    But EU02A is indicated as A2 and EU2YX
    as Y.
Manufacturing date
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Manufacturing period
        First 10 days of month
        Middle 10 days of month
        Last 10 days of month

Part Number
FMU-12S is indicated as “FMU12S.”
Polarity: Rectifier Symbol
Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Third and fourth chracters: Day

Laser marking or White marking

Part Number: abbreviation

                       SFPB-64 is indicated as “C4”

Cathode band

Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)

Part Number

Polarity: Rectifier Symbol

Lot No.

First character: Lot code

Second character: Year (Last digit of year)

Third character: Month (A to M except I)

Part Number: abbreviation

                       SSB-14 is indicated as “A”

Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)

Part Number: Full name
Polarity: Rectifier Symbol
Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Third and fourth chracters: Day

Laser marking or White marking

Part Number: 2 set marking
Manufacturing date and period: 2 set marking
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
        First 10 days of month
        Middle 10 days of month
        Last 10 days of month
Cathode band

Color of
markings:

White:   For Power Supply and SBD
Yellow: For Medium speed
Red:     For High-speed and ultra high-speed

Part Number
Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Third character: A — First 10 days of month
                           B— Middle 10 days of month
                          C— Last 10 days of month
Input/output marking
Laser marking or White marking

Axial (A0)

TO-220F Type

5

TO-3PF, FM80 Type

Axial (E0, E1)

2

Axial (R1, R2, R3, R4)

3

RBV

4

MO

C

87

Cathode band
   Color: White

RK44

96

RBV

402

9

9B

FMU12S

8 5 1 2

FML-32S

7 D 0 5

FMG-G3CS

1 9 2 4

C468

M  A

9

D

(1-chip type)

11

Part Number: Excluding last character
FML-G12S is indicated as “FML-G12.”
Last character of Part Number
Polarity: Rectifier Symbol
Lot No.
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Third and fourth chracters: Day

Laser marking or White marking

FMLG12

0 1 2 5

S

(1-chip type)

6

Surface Mount (SFP)

7

Surface Mount (SOT23)

9

Surface Mount (D Pack)

8

Surface Mount (LD Pack)

10

1

Refer P42 to P43

Refer P46 to P47

High-Voltage Rectifier Diode

11

Silicon Varistors

12




Part Number

Polarity: Rectifier Symbol

Lot No.

First character: Year (Last digit of year)

Second character: Month (A to M except I)

Third character: Week











A 6 3

➀ ➁

B

A

6 H

64S



➀ ➁




E

9C1

29G

Marking Guide

Note: hight-voltage rectifier diodes shall have different specifications.

Allegro_Silicon_Diodes-html.html
background image

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Center-tap

Bridge

100

1.0

1.7 (3.0)

20     

4.0

6.0

EM 1Y

RM 4Y

FMM-31S, R

RBV-401

RBV-601

1.0

3.0

10     

2.0

3.0

10

10

10

10

10

17     

  8     

2.0

5.0

3.0

48

50

51

51

52

0.3

1.2

5.5

4.05

6.45

45

200

120

80

120

50

50

100

100

100

100

100

100

100

100

0.97

0.95

1.1

1.05

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

12

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

Rectifier Diodes

100V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

13

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Center-tap

Bridge

200

0.9

1.0

1.0

1.0

1.0

1.0

1.5

1.2

1.2

1.7 (3.0)

10     

20     

4.0

6.0

10     

SFPM-52

SFPM-62

AM01Z

EM01Z

EM 1Z

RM 1Z

RM 10Z

RO 2Z

RM 2Z

RM 4Z

FMM-22S, R

FMM-32S, R

RBV-402

RBV-602

RBV-4102

1.0

1.0

1.0

1.0

1.0

1.0

1.5

1.5

1.5

3.0

5.0

10     

2.0

3.0

5.0

10

10

10

10

10

  5

10

10

10

10

10

10

10

10

10

20

20

22

20

17

15

15

12

12

  8

     4.0

     2.0

     5.0

     3.0

     2.0

48

48

49

50

49

50

50

51

51

52

0.072

0.072

0.13

0.2

0.3

0.4

0.4

0.61

0.6

1.2

2.1

5.5

4.05

6.45

4.05

30

45

35

45

45

50

120

80

100

200

100

120

80

120

80

50

50

50

50

50

50

50

50

50

50

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

150 (Tj)

1.0

0.98

0.98

0.97

0.97

0.95

0.91

0.92

0.91

0.95

1.1

1.1

1.05

1.0

1.1

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

4.5

±

0.2

2.6

±

0.2

2.05

±

0.2

0.05

1.35

±

0.4

1.35

±

0.4

1.1

±

0.2

1.5

±

0.2

5.1

2.0min

+0.4

–0.1

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Rectifier Diodes

200V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

14

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Center-tap

Bridge

400

0.9

1.0

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

10     

20     

4.0

6.0

SFPM-54

SFPM-64

AM01

EM01

EM 1

RM 1

EM 2

RM 10

RM 2

RO 2

RM 3

RM 4

FMM-24S, R

FMM-34S, R

RBV-404

RBV-604

1.0

1.0

1.0

1.0

1.0

1.0

1.2

1.5

1.5

1.5

2.5

3.0

5.0

10     

2.0

3.0

10

10

10

10

10

  5

10

10

10

10

10

10

10

10

10

10

20

20

22

20

17

15

17

15

12

12

10

  8

     4.0

     2.0

     5.0

     3.0

48

48

49

50

50

51

51

0.072

0.072

0.13

0.2

0.3

0.4

0.3

0.4

0.6

0.61

1.0

1.2

2.1

5.5

4.05

6.45

30

45

35

45

45

50

80

150

100

80

150

200

100

120

80

120

50

50

50

50

50

50

50

50

50

50

100

50

100

100

100

100

100

100

100

100

100

100

100

100

100

100

150

100

100

100

100

100

1.0

0.98

0.98

0.97

0.97

0.95

0.92

0.91

0.91

0.92

0.95

0.95

1.1

1.1

1.1

1.05

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0 . 1

2.7

±

0 . 1

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

4.5

±

0.2

2.6

±

0.2

2.05

±

0.2

0.05

1.35

±

0.4

1.35

±

0.4

1.1

±

0.2

1.5

±

0.2

5.1

2.0min

+0.4

–0.1

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Rectifier Diodes

400V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

15

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Center-tap

Bridge

600

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

1.8 (3.2)

10     

20     

4.0

4.0

4.0

6.0

6.0

13     

15     

15     

25     

AM01A
EM01A
EM 1A
RM 1A
EM 2A
RM 11A
RM 10A
RM 2A
RO 2A
RM 3A
RM 4A
RM 4AM
FMM-26S, R
FMM-36S, R
RBV-406
RBV-406H
RBV-406M
RBV-606
RBV-606H
RBV-1306
RBV-1506S
RBV-1506
RBV-2506

1.0

1.0

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.5

3.0

3.5

5.0

10     

2.0

2.0

2.0

3.0

3.0

6.5

7.5

7.5

12.5  

10

10

10

  5

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

50

50

22

20

17

15

17

15

15

12

12

10

  8

  8

     4.0

     2.0

     5.0

     5.0

     5.0

     3.0

     3.0

     1.5

     1.5

     1.5

     1.5

48

49

50

50

51

51

52

51

52

53

0.13

0.2

0.3

0.4

0.3

0.4

0.4

0.6

0.61

1.0

1.2

1.2

2.1

5.5

4.05

4.05

4.05

6.45

6.45

6.45

6.45

6.45

6.45

35

45

45

50

80

100

150

100

80

150

200

350

100

120

80

120

120

120

140

80

150

200

350

50

50

50

50

50

50

50

50

50

100

50

50

100

100

100

100

100

100

200

100

200

200

200

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.98

0.97

0.97

0.95

0.92

0.92

0.91

0.91

0.92

0.95

0.95

0.92

1.1

1.1

1.1

0.92

1.0

1.05

1.05

1.2

1.1

1.05

1.05

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Rectifier Diodes

600V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

16

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Bridge

800

0.8

1.0

1.2

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

4.0

6.0

RM 1B

EM 1B

EM 2B

RM 11B

RM 10B

RM 2B

RO 2B

RM 3B

RM 4B

RBV-408

RBV-608

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.5

3.0

2.0

3.0

  5

20

10

10

10

10

10

10

10

10

10

15

17

17

15

15

12

12

10

  8

     5.0

     3.0

49

48

49

50

51

52

0.4

0.3

0.3

0.4

0.4

0.6

0.61

1.0

1.2

4.05

6.45

40

35

80

100

150

100

80

150

150

100

170

50

100

50

50

50

50

50

100

50

50

100

100

100

100

100

100

100

100

150

100

100

100

1.2  

0.97

0.92

0.92

0.91

0.91

0.92

0.95

0.95

1.0

0.95

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Rectifier Diodes

800V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

17

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Bridge

1000

0.8

1.0

1.2

1.2

1.2

2.0

1.7 (3.0)

4.0

RM 1C

EM 1C

RM 11C

RM 2C

RO 2C

RM 3C

RM 4C

RBV-40C

1.0

1.0

1.5

1.5

1.5

2.5

3.0

2.0

  5

20

10

10

10

10

10

10

15

17

15

12

12

10

  8

     5.0

49

48

49

50

51

0.4

0.3

0.4

0.6

0.61

1.0

1.2

4.05

40

35

100

100

80

150

150

100

50

100

50

50

50

100

50

50

100

100

100

100

100

150

100

100

1.2  

0.97

0.92

0.91

0.92

0.95

0.95

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Rectifier Diodes

1000V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

18

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Frame-2Pin

Center-tap

100

1.2

1.5

2.0

 1.5 (3.5)

 2.0 (3.5)

 2.2 (4.0)

10     

10     

EU 2YX

RU 2YX

RU 3YX

RU 30Y

RU 4Y

RU 4YX

FMU-G2YXS

FMU-21S, R

1.2

1.5

2.0

3.5

3.5

3.5

10     

5.0

10

10

10

10

10

10

50

50

17

15

12

10

  8

  8

     4.2

     4.0

56

57

58

59

60

60

0.3

0.4

0.6

1.0

1.2

1.2

2.1

2.1

25

30

50

80

70

70

100

40

300

300

300

300

300

300

500

500

100

100

100

100

100

100

100

100

0.2

0.2

0.2

0.4

0.4

0.4

0.2

0.4

0.08

0.08

0.08

0.18

0.18

0.18

0.08

0.18

10/10

10/10

10/10

10/10

10/10

100/100

100/100

100/100

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

10/20

100/200

100/200

100/200

0.9

0.95

0.95

0.97

1.3

1.3

1.0

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Fast-Recovery Rectifier Diodes

100V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

19

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Center-tap

200

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.8

1.0

1.0

1.0

 1.5 (3.5)

 2.0 (3.5)

 5.0

10     

20     

EU01Z

EU 1Z

AU01Z

AS01Z

EH 1Z

RF 1Z

RH 1Z

ES01Z

ES 1Z

AU02Z

EU02Z

EU 2Z

RU 2Z

RU 30Z

RU 4Z

FMU-12S, R

FMU-22S, R

FMU-32S, R

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

1.0

1.0

1.0

3.5

3.5

2.5

5.0

10     

10

10

10

10

10

10

  5

10

10

10

10

10

10

10

10

50

50

50

20

17

22

22

17

15

15

20

17

22

20

17

15

10

  8

     4.0

     4.0

     2.0

54

55

54

55

56

54

55

54

55

57

58

59

60

61

0.2

0.3

0.13

0.13

0.3

0.4

0.4

0.2

0.3

0.13

0.2

0.3

0.4

1.0

1.2

2.1

2.1

5.5

15

15

15

20

30

15

35

30

30

25

15

15

20

80

70

30

40

80

150

150

150

50

200

200

70

200

200

250

300

300

300

300

300

500

500

500

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

100/100

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

100/200

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

1.3

1.4

1.4

1.5

0.97

1.3

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Fast-Recovery Rectifier Diodes

200V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

20

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Center-tap

400

  0.25

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.8

1.0

1.0

1.1

1.5

1.5

2.0

3.0

 1.5 (3.0)

 2.0 (3.5)

 5.0

10     

20     

EU01

EU 1

RU 1

AU01

AS01

EH 1

RF 1

RH 1

ES 1

ES01

AU02

EU02

EU 2

RU 2M

RU 3

RU 3M

RU 30

RU 31

RU 4

RU 4M

FMU-14S, R

FMU-24S, R

FMU-34S, R

  0.25

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

1.0

1.0

1.1

1.5

1.5

2.0

3.0

3.0

3.5

2.5

5.0

10     

10

10

10

10

10

10

10

  5

10

10

10

10

10

10

10

10

10

50

10

10

50

50

50

20

17

15

22

22

17

15

15

20

20

22

20

17

15

12

12

10

10

  8

  8

     4.0

     4.0

     2.0

54

55

57

54

55

56

55

54

55

57

58

59

60

61

0.2

0.3

0.4

0.13

0.13

0.3

0.4

0.4

0.2

0.2

0.13

0.2

0.3

0.4

0.6

0.6

1.0

1.0

1.2

1.2

2.1

2.1

5.5

15

15

15

15

20

30

15

35

30

30

25

15

15

20

20

50

200

150

50

70

30

40

80

150

150

200

150

50

200

200

70

200

200

250

300

300

300

400

350

300

500

300

300

500

500

500

100

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

10/10

100/100

100/100

100/100

100/100

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

10/20

100/200

100/200

100/200

100/200

2.5

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

1.3

1.4

1.4

1.2

1.5

1.1

0.95

1.2

1.5

1.3

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Fast-Recovery Rectifier Diodes

400V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

21

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Axial

Frame-2Pin

Center-tap

600

  0.25

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.7

0.8

1.0

1.0

1.0

1.1

1.5

1.5

1.5

2.0

3.0

 1.5 (3.0)

 2.0 (3.5)

5.0

10     

5.0

10     

20     

EU01A

EU 1A

RU 1A

AU01A

AS01A

EH 1A

RF 1A

RH 1A

ES 1A

ES01A

RS 1A

AU02A

EU02A

EU 2A

RU 2

RU 2AM

RU 20A

RU 3A

RU 3AM

RU 30A

RU 31A

RU 4A

RU 4AM

FMU-G16S

FMU-G26S

FMU-16S, R

FMU-26S, R

FMU-36S, R

  0.25

  0.25

  0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

0.8

1.0

1.0

1.0

1.1

1.5

1.5

1.5

2.0

3.0

3.0

3.5

5.0

10     

2.5

5.0

10     

10

10

10

10

10

10

10

  5

10

10

10

10

10

10

10

10

10

10

10

10

50

10

10

50

50

50

50

50

20

17

15

22

22

17

15

15

20

20

20

22

20

17

15

15

15

12

12

10

10

  8

  8

     4.0

     4.0

     4.0

     4.0

     2.0

54

55

57

54

55

56

55

54

56

54

55

57

58

59

60

60

61

0.2

0.3

0.4

0.13

0.13

0.3

0.4

0.4

0.2

0.2

0.4

0.13

0.2

0.3

0.4

0.4

0.4

0.6

0.6

1.0

1.0

1.2

1.2

2.1

2.1

2.1

2.1

5.5

15

15

15

15

20

30

15

35

30

30

30

25

15

15

20

20

50

20

50

200

150

50

70

30

40

30

40

80

150

150

200

150

50

200

200

70

200

200

200

250

300

300

300

300

350

400

350

300

500

300

300

500

500

500

500

500

100

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

10/10

100/100

100/100

100/100

100/100

100/100

100/100

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

10/20

100/200

100/200

100/200

100/200

100/200

100/200

2.5

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

2.5

1.3

1.4

1.4

1.5

1.2

1.1

1.5

1.1

0.95

1.2

1.5

1.3

1.25

1.35

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.0

15.0

5.0

2.8

3.5

16.5

20.0

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

–0.1

+0.2

±

0.5

±

0.5

S type

R type

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

S type

R type

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Fast-Recovery Rectifier Diodes

600V

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

22

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-  )

(

°

C/W)

Axial

800

  0.25

0.6

0.6

0.7

1.0

1.1

 1.5 (3.0)

RU 1B

RF 1B

RH 1B

RS 1B

RU 2B

RU 3B

RU 4B

0.25

0.6

0.6

0.8

1.0

1.0

3.0

10

10

  5

10

10

10

10

15

15

15

20

15

12

8

57

56

57

58

59

0.4

0.4

0.4

0.4

0.4

0.6

1.2

15

15

35

30

20

20

50

200

200

70

200

300

400

500

100

100

150

100

100

100

100

0.4

0.4

4

1.5

0.4

0.4

0.4

0.18

0.18

1.3

0.6

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

2.5

2.0

1.3

2.5

1.5

1.5

1.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

Fast-Recovery Rectifier Diodes

800V

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

23

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-  )

(

°

C/W)

Axial

1000

0.2

0.6

0.8

1.5

 1.5 (2.5)

RU 1C

RH 1C

RU 2C

RU 3C

RU 4C

0.25

0.6

1.0

1.5

3.0

10

  5

10

10

50

15

15

15

12

8

57

56

57

58

59

0.4

0.4

0.4

0.6

1.2

15

35

20

20

50

200

70

300

400

500

100

150

100

100

100

0.4

4

0.4

0.4

0.4

0.18

1.3

0.18

0.18

0.18

10/10

10/10

10/10

10/10

100/100

I

F

/ I

FP

(mA)

10/20

10/20

10/20

10/20

100/200

3.0

1.3

1.5

2.5

1.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

Cathode Mark

4.0

±

0.2

0.78

±

0.05

Fast-Recovery Rectifier Diodes

1000V

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

24

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-  )

(

°

C/W)

Axial

Axial

Frame-2Pin

Axial

Frame-2Pin

Frame-2Pin

Axial

1300

1500

1600

1700

1800

2000

1.0

 1.2 (1.5)

 1.5 (2.5)

0.5

0.5

0.8

1.0

2.0

2.0

2.5

2.5

 1.5 (2.5)

5.0

5.0

10     

10     

10     

10     

10     

10     

2.5

10     

8.0

10     

0.2

RH 2D

RU 4D

RU 4DS

ES01F

ES 1F

RH 10F

RH 2F

RS 3FS

RP 3F

RH 3F

RH 4F

RS 4FS

FMP-G2FS

FMQ-G1FS

FMQ-G2FS

FMU-G2FS

FMQ-G2FLS

FMQ-G2FMS

FMQ-G5FMS

FMV-G5FS

RH 3G

FMQ-G5GS

FMP-G5HS

FMR-G5HS

RC 2

1.0

1.5

3.0

0.5

0.5

1.0

1.0

3.0

2.0

2.5

2.5

3.0

5.0

5.0

10     

10     

10     

10     

10     

10     

2.5

10     

  8     

10     

0.2

10

50

50

10

10

10

10

50

50

50

10

50

50

50

50

50

50

50

50

50

50

100  

25

20

10

12

  8

  8

20

17

15

12

10

10

10

  8

  8

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

  2

  2

10

  2

  2

  2

15

93

94

54

55

93

94

95

96

95

96

97

93

96

96

56

0.6

1.2

1.2

0.2

0.3

0.4

0.6

1.0

1.0

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

6.5

6.5

1.0

6.5

6.5

6.5

0.4

60

50

50

20

20

60

60

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

20

500

500

500

200

200

500

500

500

500

500

350

500

500

500

500

6000

500

500

500

700

500

500

250

200

300

100

100

100

100

100

100

100

100

100

100

100

100

100

150

 150 (Tj)

 150 (Tj)

 150 (Tj)

150

100

100

100

100

100

100

100

4

0.4

0.4

1.5

1.5

4

4

2

0.7

4

4

1

0.7

0.7

0.5

0.6

1.2

0.5

0.5

2.0

4

0.5

1.0

1.8

4.0

1.3

0.18

0.18

0.6

0.6

1.3

1.3

0.8

0.3

1.3

1.3

0.4

0.3

0.3

0.2

0.25

0.4

0.25

0.2

0.8

1.3

0.2

0.4

0.7

1.3

10/10

500/500

500/500

10/10

10/10

10/10

10/10

100/100

500/500

100/100

100/100

100/100

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

100/100

500/500

500/500

500/500

10/10

I

F

/ I

FP

(mA)

100/200

500/1000

500/1000

10/20

10/20

100/200

100/200

100/200

500/1000

100/200

100/200

100/200

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

100/200

500/1000

500/1000

500/1000

10/20

1.0

1.8

1.8

2.0

2.0

1.0

1.0

1.1

1.7

1.3

1.5

1.5

2.0

5.0

2.8

1.6

1.8

2.4

2.4

1.5

1.3

2.7

2.0

1.6

2.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

Fast-Recovery Rectifier Diodes

1300V and over

23.0

3.0

5.5

±

0.2

3.45

±

0.2

0.8

3.35

0.65

3.3

15.6

±

0.2

1.6

3.3

16.2

5.5

9.5

1.75

±

1.75

1.05

5.45

5.45

+0.2

–0.1

+0.2

–0.1

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-  )

(

°

C/W)

Axial

70

1.0

1.0

1.1

1.5

1.5

 2.0 (3.5)

AG01Y

EG01Y

EG 1Y

RG 10Y

RG 2Y

RG 4Y

1.0

1.0

1.1

1.5

1.5

3.5

100

100

100

500

500

1000

22

20

17

15

12

8

63

64

65

66

69

0.13

0.2

0.3

0.4

0.6

1.2

25

30

30

50

50

100

0.5

0.5

0.5

2.5

2.5

5

100

100

100

100

100

100

100

100

100

100

100

100

50

50

50

50

50

50

100/100

100/100

100/100

100/100

100/100

100/100

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

1.2

1.2

1.2

1.1

1.1

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

25

Ultra-Fast-Recovery Rectifier Diodes

70V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

26

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Bridge

200

0.9

1.0

1.5

3.0

6.0

0.7

0.7

0.8

1.0

1.0

1.2

1.2

1.5

1.5

1.5

2.0

2.0

2.0

3.0

3.0

1.0 (3.0)

3.5

3.5

3.5

5.0

5.0

5.0

5.0

10.0  

10.0  

5.0

5.0

5.0

10.0  

10.0  

10.0  

15.0  

20.0  

20.0  

20.0  

4.0

6.0

SFPL-52

SFPL-62

SFPX-62

SPX-G32S

SPX-62S

AG01Z

EG01Z

EG 1Z

AL01Z

EN01Z

RG 10Z

RG 2Z

EL02Z

EL 1Z

RN 1Z

RL 10Z

RL 2Z

RN 2Z

RN 3Z

RX 3Z

RG 4Z

RL 3Z

RL 4Z

RN 4Z

FML-G12S

FMN-G12S

FMP-G12S

FMX-G12S

FML-G22S

FMX-G22S

FMG-12S, R

FML-12S

FMX-12S

FMG-22S, R

FML-22S

FMX-22S

FMX-22SL

FMG-32S, R

FML-32S

FMX-32S

RBV-402L

RBV-602L

1.0

1.0

1.5

3.0

3.0

0.7

0.7

0.8

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.0

2.0

2.0

3.0

3.0

3.0

3.5

3.5

3.5

5.0

5.0

5.0

5.0

10.0

10.0

2.5

2.5

2.5

5.0

5.0

5.0

7.5

10.0

10.0

10.0

2.0

3.0

10

10

10

50

50

100

50

50

100

10

500

500

50

100

20

50

100

50

50

50

1000

50

150

50

250

100

50

100

500

200

500

150

50

500

250

100

150

1000

600

200

50

250

20

20

20

     5.0

     5.0

22

20

17

22

20

15

12

20

17

15

15

12

12

10

10

  8

10

  8

  8

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     2.0

     2.0

     2.0

     5.0

     3.0

62

63

63

64

63

64

65

67

64

65

66

67

68

69

68

70

71

72

73

74

76

74

75

76

77

78

0.072

0.072

0.072

0.41

0.41

0.13

0.2

0.3

0.13

0.2

0.4

0.6

0.2

0.3

0.4

0.4

0.6

0.6

1.0

1.0

1.2

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

5.5

4.05

6.45

25

25

30

50

80

15

15

15

25

50

50

50

25

20

60

30

30

70

80

80

80

80

80

120

65

100

65

65

150

150

35

35

35

65

65

65

100

150

150

150

80

100

1

1

2

10  

10  

   0.5

   0.3

   0.3

   0.5

2

   2.5

   2.5

   0.1

   0.5

3

   0.1

   0.5

4

6

10  

5

   0.2

   0.5

6

1

10  

   0.5

20  

2

50  

   1.5

   0.5

10  

   1.5

1

20  

30  

5

2

50  

   0.1

1

150 (Tj)

150 (Tj)

150 (Tj)

100

100

100

100

100

100

150 (Tj)

100

100

100

100

150 (Tj)

100

100

150 (Tj)

150 (Tj)

100

100

100

100

150 (Tj)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

50

50

30

30

30

100

100

100

50

100

100

100

40

100

100

50

50

100

100

30

100

50

50

100

40

100

150

30

40

30

100

40

30

100

40

30

30

100

40

30

40

50

35

35

25

25

25

50

50

50

35

50

50

50

30

50

50

35

35

50

50

25

35

35

50

50

30

50

70

25

30

25

50

30

25

50

30

25

25

50

30

25

30

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

500/500

100/100

100/100

100/100

100/100

100/100

100/100

500/500

100/100

100/100

500/500

100/100

100/100

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

100/200

500/1000

100/200

100/200

0.98

0.98

0.98

0.98

0.98

1.8

1.9

1.7

0.98

0.92

1.5

1.5

0.98

0.98

0.92

0.98

0.98

0.92

0.92

0.98

1.7

0.95

0.95

0.92

0.98

0.92

1.15

0.98

0.98

0.98

1.8

0.98

0.98

1.8

0.98

0.98

0.98

1.8

0.98

0.98

0.98

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

200V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

Ultra-Fast-Recovery Rectifier Diodes

200V

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

27

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

10

7.5 7.5

30

11

13

4-1.0

4.6
3.6

2.7

20.0

17.5

C3

0.7

3.2

±

0.1

S type

R type

S type

R type

+0.4

–0.1

6.5

±

0.4

2.3

±

0.4

5.4

4.9

4.1

5.4

±

0.4

1.7

±

0.5

5.5

±

0.4

2.5

±

0.4

0.8

±

0.1

0.8

1.5 max

±

0.1

0.55

±

0.1

0.55

±

0.1

1.15

1

2

3

±

0.1

1.2max

2.29

±

0.5

2.29

±

0.5

0 to 0.25

0.5

±

0.2

2.9

0.16

1.37

5.0

0.7

Part Number
Polarity
Lot No.

1

3

 2  (Common to backside of case)

N.C

1 Chip

Anode

Cathode

Anode

Center-tap

Anode

Cathode (Common)

1
2

3

1
2
3

Allegro_Silicon_Diodes-html.html
background image

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

28

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Center-tap

Surface Mount

Frame-2Pin

300

2.0

5.0

5.0

5.0

10.0

10.0

10.0

20.0

20.0

20.0

SFPX-63

FML-G13S

FMG-13S, R

FML-13S

FMG-23S, R

FML-23S

FMX-23S

FMG-33S, R

FML-33S

FMX-33S

2   

5.0

2.5

2.5

5.0

5.0

5.0

10.0

10.0

10.0

50

100

500

50

500

100

50

1000

200

100

20   

4.0

4.0

4.0

4.0

4.0

4.0

2.0

2.0

2.0

71

73

75

74

75

76

77

0.07

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

5.5

20

70

35

40

65

70

65

150

100

100

3   

0.2

1.5

0.1

1.5

0.5

15     

5   

1   

30     

150

100

100

100

100

100

150

100

100

150

30

50

100

50

100

50

30

100

50

30

25

35

50

35

50

35

25

50

35

25

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

500/500

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

1.3

1.3

1.8

1.3

1.8

1.3

1.3

1.8

1.3

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

300V

S type

R type

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

S type

R type

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

+0.4

–0.1

Allegro_Silicon_Diodes-html.html
background image

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Frame-2Pin

Center-tap

Axial

400

0.7

0.7

0.8

1.2

1.2

1.5

2.0

3.5

1.0 (3.0)

5.0

5.0

5.0

5.0

5.0

8.0

10.0  

16.0  

20.0  

AG01

EG01

EG 1

RG 10

RG 2

EL 1

RL 2

RL 3

RG 4

FML-G14S

FMN-G14S

FMX-G14S

FMG-14S, R

FML-14S

FMG-24S, R

FML-24S

FMG-34S, R

FML-34S

0.7

0.7

0.8

1.5

1.5

1.5

2.0

3.5

3.0

5.0

5.0

5.0

2.5

2.5

5.0

5.0

10.0

10.0

100

50

50

500

500

10

10

100

500

100

50

50

500

50

500

100

1000

200

22

20

17

15

12

17

12

10

  8

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     2.0

     2.0

63

64

65

67

65

67

68

69

71

74

75

74

75

76

77

0.13

0.2

0.3

0.4

0.6

0.3

0.6

1.0

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

15

15

15

50

50

20

40

80

80

70

70

70

35

40

65

70

100

100

   0.5

   0.3

   0.3

   2.5

   2.5

     0.05

   0.1

   0.2

   2.5

   0.2

10  

15  

   1.5

   0.1

   2.5

   0.2

5

   0.4

100

100

100

100

100

100

150 (Tj)

150 (Tj)

100

100

150 (Tj)

150

100

100

100

100

100

100

100

100

100

100

100

100

50

50

100

50

100

30

100

50

100

50

100

50

50

50

50

50

50

50

35

35

50

35

50

25

50

35

50

35

50

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

1.8

2.0

1.8

1.8

1.8

1.3

1.3

1.3

1.8

1.3

1.0

1.3

2.0

1.3

2.0

1.3

2.0

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

29

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

400V

S type

R type

S type

R type

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

30

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Frame-2Pin

Center-tap

Axial

600

0.5

0.5

0.6

1.0

1.0

1.2

2.0

1.0 (2.0)

3.0

4.0

5.0

5.0

5.0

10.0  

10.0  

10.0  

8.0

3.0

6.0

15.0  

20.0  

AG01A

EG01A

EG 1A

RG 10A

RG 2A

RL 2A

RL 3A

RG 4A

RL 4A

FMG-G26S

FML-G16S

FMX-G16S

FMN-G16S

FML-G26S

FMD-G26S

FMX-G26S

FMG-G36S

FMC-26U

FMG-26S, R

FMG-36S, R

FML-36S

0.5

0.5

0.6

1.0

1.0

1.2

3.0

2.0

3.0

4.0

5.0

5.0

5.0

10.0

10.0

10.0

8.0

3.0

3.0

7.5

10.0

100

100

100

500

500

50

50

500

50

500

100

50

50

100

100

100

500

500

500

1000

100

22

20

17

15

12

12

10

  8

  8

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     4.0

     2.0

     4.0

     4.0

     2.0

     2.0

63

64

65

67

68

69

70

71

73

73

74

77

0.13

0.2

0.3

0.4

0.6

0.6

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

2.1

2.1

5.5

5.5

15

10

10

50

50

30

60

50

80

50

50

50

50

100

100

100

80

50

50

80

100

   0.5

   0.5

   0.5

   2.5

   2.5

  0.1

  0.2

  2.5

  0.1

  3.0

  0.5

15    

10    

  0.3

  0.3

  0.02

  3

  3

  3

  5

  0.3

100

100

100

100

100

150 (Tj)

150 (Tj)

100

150 (Tj)

100

100

150

150 (Tj)

100

150

150

100

150 (Tj)

100

100

100

100

100

100

100

100

50

50

100

50

100

50

30

100

65

50

30

100

70

100

100

65

50

50

50

50

50

35

35

50

35

50

35

25

50

40

30

25

50

35

50

50

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

100/100

500/500

100/100

100/100

500/500

500/500

100/100

500/500

500/500

100/100

100/100

500/500

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

500/1000

100/200

100/200

500/1000

500/1000

100/200

500/1000

500/1000

100/200

100/200

500/1000

1.8

2.0

2.0

2.0

2.0

1.55

1.7

2.0

1.5

2.5

1.5

1.5

1.2

1.7

1.7

1.5

2.5

2.0

2.2

2.2

1.7

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

600V

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

Ultra-Fast-Recovery Rectifier Diodes

600V

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

31

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

S type

R type

Allegro_Silicon_Diodes-html.html
background image

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-c)

(

°

C/W)

Frame-2Pin

Center-tap

800

3.0

5.0

3.0

FMC-G28S

FMC-G28SL

FMC-28U

3.0

5.0

3.0

100

200

100

4.0

4.0

4.0

70

73

2.1

2.1

2.1

50

60

50

1

2

0.5

150 (Tj)

150 (Tj)

150 (Tj)

70

70

70

35

35

35

500/500

500/500

500/500

I

F

/ I

FP

(mA)

500/1000

500/1000

500/1000

3.0

3.0

3.0

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

32

Ultra-Fast-Recovery Rectifier Diodes

800V

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

33

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Frame-2Pin

Axial

1000

0.2

0.2

0.4

0.5

0.7

1.0 (2.0)

4.0

5.0

AP01C

EP01C

RU 1P

EG01C

RG 1C

RG 4C

FMG-G2CS

FMG-G3CS

0.2

0.2

0.4

0.5

0.7

2.0

3.0

5.0

100

5

5

50

20

500

50

100

22

20

15

20

15

  8

     4.0

     2.0

62

66

64

65

69

71

73

0.13

0.2

0.4

0.2

0.4

1.2

2.1

5.5

5

5

10

10

10

60

30

60

0.5

0.05

0.05

0.5

0.25

2.5

0.3

0.5

100

100

100

100

100

100

100

100

200

200

100

100

100

100

100

150

80

80

50

50

50

50

50

70

100/100

100/100

100/100

100/100

100/100

500/500

500/500

500/500

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

500/1000

4.0

4.0

4.0

3.3

3.3

3.0

4.0

3.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

1000V

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

34

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Frame-2Pin

Frame-2Pin

Axial

1600

2000

1200

3.0

3.0

0.1

FMC-26UA

FMC-28UA

RP 1H

3.0

3.0

0.1

500

100

2

4.0

4.0

15     

73

66

2.1

2.1

0.4

50

50

5

3.0

0.5

0.01

150 (Tj)

150 (Tj)

100

70

70

100

35

35

50

500/500

500/500

10/10

I

F

/ I

FP

(mA)

500/1000

500/1000

10/20

4.0

6.0

7.0

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

Ultra-Fast-Recovery Rectifier Diodes

1200V and over

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

t

rr   

(ns)

1

t

rr   

(ns)

2

Fig.
No.

Page where 

characteristic 

curve is shown

Allegro_Silicon_Diodes-html.html
background image

35

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(mA)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Center-tap

30

1.0

1.0

1.0

1.0

2.0

2.0

2.0

3.0

3.0

5.0

6.0

1.0

1.0

1.0

1.5

1.7

2.0

2.5

3.0

3.0

10     

20     

30     

MI1A3
MI2A3
SFPA-53
SFPJ-53
SFPA-63
SFPE-63
SFPJ-63
SFPA-73
SFPJ-73
SPJ-G53S
SPJ-63S
AK 03
EA 03
EK 03
EK 13
RK 13
RA 13
RK 33
RJ 43
RK 43
FMJ-23L
FMJ-2203
FMJ-2303

1.0

1.0

1.0

1.0

2.0

2.0

2.0

3.0

3.0

5.0

3.0

1.0

1.0

1.0

2.0

2.0

2.0

2.5

3.0

3.0

5.0

10.0  

15.0  

1   

2   

1.5

1.0

3.0

0.2

2.0

4.5

3.0

5.0

3   

1   

1.5

5   

5   

5   

3   

5   

3   

5   

5   

10     

15     

70

70

20

20

20

20

20

20

20

5

5

22

20

20

17

15

15

12

8

8

4

4

4

79

82

83

84

84

85

90

0.011

0.011

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.29

0.29

0.13

0.3

0.3

0.3

0.45

0.45

0.6

1.2

1.2

2.1

2.1

2.1

12

12

30

30

40

40

40

50

50

100

50

25

30

40

40

60

40

50

50

80

100

150

150

70

110

70

35

140

20

70

210

100

250

100

50

70

50

50

50

140

50

100

50

250

350

500

150 (Tj)

125 (Tj)

100

150

100

150 (Tj)

150

100

150

150

150 (Tj)

100 (Tj)

100

100

100

100

100

100

150

100

150 (Tj)

150

150

0.47

0.39

0.36

0.45

0.36

0.55

0.45

0.36

0.45

0.45

0.45

0.55

0.36

0.55

0.55

0.55

0.36

0.55

0.45

0.55

0.45

0.47

0.48

–40 to +150

–40 to +125

–40 to +125

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

2.6

±

0.2

3.6

±

0.2

0.6

±

0.2

1.

6

±

0.2

1.1

±

0.2

0 to 0

.1

t0

.1

5

max

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Schottky Barrier Diodes

30V

Fig.
No.

Page where  characteristic  curve is shown

+0.4

–0.1

6.5

±

0.4

2.3

±

0.4

5.4

4.9

4.1

5.4

±

0.4

1.7

±

0.5

5.5

±

0.4

2.5

±

0.4

0.8

±

0.1

0.8

1.5 max

±

0.1

0.55

±

0.1

0.55

±

0.1

1.15

1

2

3

±

0.1

1.2max

2.29

±

0.5

2.29

±

0.5

0 to 0.25

0.5

±

0.2

2.9

0.16

1.37

5.0

0.7

Part Number
Polarity
Lot No.

1

3

 2  (Common to backside of case)

N.C

1 Chip

Anode

Cathode

Anode

Center-tap

Anode

Cathode (Common)

1
2

3

1
2
3

Allegro_Silicon_Diodes-html.html
background image

36

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(mA)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

40

0.5

1.0

1.5

2.0

2.0

3.0

5.0

6.0

1.0

1.0

1.0

1.5

1.7

2.5

3.0

3.0

5.0

10.0   

15     

4.0

6.0

10.0  

10     

10     

12     

15     

15     

15     

15     

20     

30     

30     

SSB-14

SFPB-54

SFPB-64

SFPB-74

SFPE-64

SPB-G34S

SPB-G54S

SPB-64S

AK 04

AW 04

EK 04

EK 14

RK 14

RK 34

RK 44

FMB-G14

FMB-G14L

FMB-G24H

MPE-24H

FMB-24

FMB-24M

FMW-24L

FMB-24L

FME-24L

FMB-34S

FMW-24H

FME-24H

FMB-24H

FMB-34

FMB-2204

FMB-2304

FMB-34M

0.5

1.0

2.0

2.0

2.0

3.0

5.0

3.0

1.0

1.0

1.0

2.0

2.0

2.5

3.0

3.0

5.0

10.0

7.5

2.0

3.0

5.0

5.0

5.0

6   

7.5

7.5

7.5

7.5

10   

15   

15.0

   0.1

1

5

5

   0.2

   3.5

5

   3.5

1

5

5

5

5

5

5

5

5

10  

     0.75

5

5

5

5

   0.5

5

  7.5

     0.75

   7.5

10  

10  

15  

20  

150  

20

20

20

20

  5

  5

  5

22

22

20

17

15

12

  8

  4

  4

  4

     2.5

  4

  4

  4

  4

  4

   2 

  4

  4

  4

  2

  4

  4

  2

79

80

81

82

83

84

85

86

82

87

88

87

89

91

87

89

87

90

88

90

0.009

0.072

0.072

0.072

0.072

0.29

0.29

0.29

0.13

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

1.04

2.1

2.1

2.1

2.1

2.1

5.5

2.1

2.1

2.1

5.5

2.1

2.1

5.5

4

30

60

60

40

50

60

50

25

25

40

40

60

50

80

60

60

150

100

50

60

100

60

80

75

120

100

100

150

150

150

300

5

50

50

50

20

50

50

50

50

35

50

50

50

50

50

100

100

65

50

35

35

175

35

30

35

250

50

50

65

350

500

100

100

100

100

100

150 (Tj)

100

100

100

100 (Tj)

150

100

100

100

100

100

100

100

100

150 (Tj)

100

100

150

100

100

100

150

100

100

100

150

150

100

0.58

0.55

0.55

0.5

0.6

0.55

0.55

0.55

0.55

0.58

0.55

0.55

0.55

0.55

0.55

0.55

0.55

0.55

0.6

0.55

0.55

0.55

0.55

0.6

0.58

0.55

0.6

0.55

0.55

0.55

0.55

0.55

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Schottky Barrier Diodes

40V

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

Schottky Barrier Diodes

40V

37

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

2.80
3.04

0.89
1.04

0.013

0.10

0.085
0.130

0.45
0.60

(0.15)

0.45
0.60

1.78
2.05

0.37
0.46

0.95
1.05

2.10
2.50

1.20
1.40

1.2

1.27

10.2

0.86

0.76

2.54

2.54

4.44

1.3

2.59

0.4

3.19

1.3

8.5

10.0

11.3

11.0

1.4

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

6.5

±

0.4

2.3

±

0.4

5.4

4.9

4.1

5.4

±

0.4

1.7

±

0.5

5.5

±

0.4

2.5

±

0.4

0.8

±

0.1

0.8

1.5 max

±

0.1

0.55

±

0.1

0.55

±

0.1

1.15

1

2

3

±

0.1

1.2max

2.29

±

0.5

2.29

±

0.5

0 to 0.25

0.5

±

0.2

2.9

0.16

1.37

5.0

0.7

Part Number
Polarity
Lot No.

1

3

 2  (Common to backside of case)

N.C

1 Chip

Anode

Cathode

Anode

Center-tap

Anode

Cathode (Common)

1
2

3

1
2
3

1
2
3

Tolerance 

±

0.2

unless otherwise
specified

N.C
Anode
Cathode

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

+0.4

–0.1

1

2

3

Allegro_Silicon_Diodes-html.html
background image

38

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(mA)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Bridge

60

0.7

2.0

2.0

5.0

6.0

0.7

0.7

1.5

1.5

2.0

3.5

6.0

4.0

10     

15     

20     

30     

30     

4.0

SFPB-56

SFPB-66

SFPB-76

SPB-G56S

SPB-66S

AK 06

EK 06

EK 16

RK 16

RK 36

RK 46

FMB-G16L

FMB-26

FMB-26L

FMB-36

FMB-2206

FMB-2306

FMB-36M

RBV-406B

0.7

2.0

2.0

5.0

3.0

0.7

0.7

1.5

1.5

2.0

3.5

5.0

2.0

5.0

7.5

10.0  

15     

15.0  

2.0

1

1

2

3

1

1

1

1

1

2

3

5

1

   2.5

5

8

8

10  

2

20

20

20

5

5

22

20

17

15

12

8

4

4

4

2

4

4

2

5

79

80

81

82

83

84

85

86

88

91

88

89

91

92

0.072

0.072

0.072

0.29

0.29

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

5.5

2.1

2.1

5.5

4.25

10

25

40

60

40

10

10

25

25

40

70

50

40

50

100

150

150

150

40

     7.5

15

20

125  

70

     7.5

     7.5

15

15

20

35

50

20

50

75

275  

400  

150  

20

100

100

100

150

150

100

100

100

100

100

100

100

100

100

100

150

150 (Tj)

100

100

0.62

0.69

0.62

0.7  

0.7  

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.7  

0.7  

0.62

0.62

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

25

9.5

3.2

C3

7.5

7.5

7.5

13

4 -1.0

4.6

3.6

15.0

17.5

0.7

±

0.1

2.7

±

0.1

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Schottky Barrier Diodes

60V

Fig.
No.

Page where  characteristic  curve is shown

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

+0.4

–0.1

6.5

±

0.4

2.3

±

0.4

5.4

4.9

4.1

5.4

±

0.4

1.7

±

0.5

5.5

±

0.4

2.5

±

0.4

0.8

±

0.1

0.8

1.5 max

±

0.1

0.55

±

0.1

0.55

±

0.1

1.15

1

2

3

±

0.1

1.2max

2.29

±

0.5

2.29

±

0.5

0 to 0.25

0.5

±

0.2

2.9

0.16

1.37

5.0

0.7

Part Number
Polarity
Lot No.

1

3

 2  (Common to backside of case)

N.C

1 Chip

Anode

Cathode

Anode

Center-tap

Anode

Cathode (Common)

1
2

3

1
2
3

Allegro_Silicon_Diodes-html.html
background image

39

Package

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

R

(mA)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Center-tap

90

100

0.7

1.5

0.7

0.7

1.5

1.5

2.0

3.5

4.0

4.0

8.0

15     

20     

20     

20     

30     

SFPB-59

SFPB-69

AK 09

EK 09

EK 19

RK 19

RK 39

RK 49

FMB-G19L

FMB-29

FMB-29L

FMB-39

MPE-29G

FMB-39M

FME-220A

FME-230A

0.7

1.5

0.7

0.7

1.5

1.5

2.0

3.5

4.0

2.0

4.0

7.5

10     

10.0  

10     

15     

1

2

1

1

2

2

3

5

5

3

5

10  

1

15  

1

   1.5

20

20

22

20

17

15

12

  8

  4

  4

  4

  2

     2.5

  2

  4

  4

79

80

82

83

84

85

86

89

91

82

91

90

0.072

0.072

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

5.5

1.04

5.5

2.1

2.1

10

40

10

10

40

40

50

60

60

50

60

60

120

150

120

150

5

10

5

5

10

10

15

35

35

15

35

50

100

60

100

150

100

100

100

100

100

100

100

100

100

100

100

100

150 (Tj)

100

150 (Tj)

150 (Tj)

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.85

0.81

0.85

0.85

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

1.2

1.27

10.2

0.86

0.76

2.54

2.54

4.44

1.3

2.59

0.4

3.19

1.3

8.5

10.0

11.3

11.0

1.4

50.0

±

1.0

2.9

±

0.1

2.4

±

0.1

0.57

±

0.02

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.78

±

0.05

Cathode Mark

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
1.35
0.85

2.54

2.54

0.45

3.3

9.0

15.0

5.0

2.8

3.5

16.5

±

0.5

20.0

±

0.5

20.0

0.8

3.3

3.4

2.3

1.0

5.45

5.45

5.0

0.65

2.6

+0.2

–0.1

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

Rth

 

(j-  )

Rth

 

(j- c)

(

°

C/W)

Schottky Barrier Diodes

90V and over

Fig.
No.

Page where  characteristic  curve is shown

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

+0.4

–0.1

Allegro_Silicon_Diodes-html.html
background image

40

Division

Part Number

V

RM

(V)

I

F (AV)

(A)

(  ) is with

Heatsink

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-  )

Rth

 

(j-c)

(

°

C/W)

1300

1500

1600

1800

1300

1500

1700

1800

1300

1600

1.0

0.8

1.0

2.0

2.5

1.5 (2.5)

2.5

10     

2.5

10     

1.2 (1.5)

1.5 (2.5)

2.0

5.0

5.0

10     

10     

10     

10     

10     

10     

8.0

10     

0.5

1.0

RH 2D

RH 10F

RH 2F

RS 3FS

RH 3F

RS 4FS

RH 4F

FMV-G5FS

RH 3G

FMR-G5HS

RU 4D

RU 4DS

RP 3F

FMQ-G1FS

FMP-G2FS

FMQ-G2FLS

FMU-G2FS

FMQ-G2FS

FMQ-G2FMS

FMQ-G5FMS

FMQ-G5GS

FMP-G5HS

FMR-G5HS

RG 2A2

RC 3B2

1.0

1.0

1.0

3.0

2.5

3.0

2.5

10     

2.5

10     

1.5

3.0

2.0

5.0

5.0

10.0  

10     

10     

10     

10     

10     

8.0

10     

0.5

1.0

10

10

10

50

50

50

10

50

50

20

50

50

50

50

50

50

50

50

50

50

100

25

20

100

100

12

15

12

10

10

8

8

2

10

2

8

8

10

4

4

4

4

4

4

2

2

2

2

12

10

93

94

93

97

93

96

94

93

95

96

95

96

94

0.6

0.44

0.6

1.0

1.0

1.2

1.2

6.5

1.0

6.5

1.2

1.2

1.0

2.1

2.1

2.1

2.1

2.1

2.1

6.5

6.5

6.5

6.5

0.6

1.0

60

60

60

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

5

20

0.5

0.5

0.5

0.5

0.5

0.5

0.35

0.7

0.5

0.2

0.5

0.5

0.5

0.5

0.5

0.5

6

0.5

0.5

0.5

0.5

0.25

0.2

0.5

0.5

100

100

100

100

100

100

100

100

100

100

100

100

100

150

100

150 (Tj)

150 (Tj)

150 (Tj)

150

100

100

100

100

100

100

4.0

4.0

4.0

2.0

4.0

1.0

4.0

2.0

4.0

1.8

0.4

0.4

0.7

0.7

0.7

1.2

0.6

0.5

0.5

0.5

0.5

1.0

1.8

0.1

0.07

1.3

1.3

1.3

0.8

1.3

0.4

1.3

0.8

1.3

0.7

0.18

0.18

0.3

0.3

0.3

0.4

0.25

0.2

0.25

0.2

0.2

0.4

0.7

0.05

0.035

10/10

10/10

10/10

100/100

100/100

100/100

100/100

500/500

100/100

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

100/100

500/500

I

F

/ I

FP

(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

100/200

500/1000

1.0

1.0

1.0

1.1

1.3

1.5

1.5

1.5

1.3

1.6

1.8

1.8

1.7

2.0

2.0

1.8

1.6

2.8

2.4

2.4

2.7

2.0

1.6

3.5

3.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

50.0

±

0.1

1.4

±

0.1

6.5

±

0.2

Cathode Mark

8.0

±

0.2

62.5

±

0.7

1.2

±

0.05

5.2

±

0.2

Cathode Mark

9.1

±

0.2

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.98

±

0.05

Cathode Mark

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35
0.85

5.08

0.45

3.3

23.0

3.0

5.5

±

0.2

3.45

±

0.2

0.8

3.35

0.65

3.3

15.6

±

0.2

1.6

3.3

16.2

5.5

9.5

1.75

±

1.75

1.05

5.45

5.45

+0.2

–0.1

+0.2

–0.1

Damper Diodes

For CRT 
Display 
Compensation

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr      

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

Fig.
No.

Page where 

characteristic 

curve is shown

For TV

For CRT 
Display

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Allegro_Silicon_Diodes-html.html
background image

41

Division

Part Number

V

RM

(V)

I

F (AV)

(A)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(A)

I

F

/ I

FP

(mA)

I

R

(

µ

A)

I

(H)

(mA)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

max

Mass

(g)

Rth

 

(j-c)

(

°

C/W)

For TV

1500

600

1700

600

1500

600

1500

600

1500

600

1500

600

1700

800

5.0

5.0

5.0

5.0

5.0

5.0

5.0

FMV-3FU

FMV-3GU

FMP-2FUR

FMQ-2FUR

FMT-2FUR

FMP-3FU

FMQ-3GU

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

50

50

50

50

50

50

50

50

50

50

50

50

500

100

1.8

1.8

4.0

4.0

4.0

1.8

1.8

97

99

98

6.5

6.5

2.1

2.1

2.1

6.5

6.5

50

50

50

50

50

50

50

0.5

0.5

0.5

0.5

3

3

2

0.5

2

7

0.5

0.5

1

0.5

100

100

100

100

150 (Tj)

150 (Tj)

150

150

150

150

100

100

100

100

4.0

0.4

2.0

0.4

0.7

0.1

2

0.15

1.0

0.1

0.7

0.1

0.7

0.07

1.3

0.18

0.8

0.18

0.3

0.05

0.8

0.07

 —

 —

0.3

0.05

0.3

0.04

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

I

F

/ I

FP

(mA)

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

1.4

1.3

1.5

1.3

2.0

2.5

1.4

1.65

1.8

1.9

2.0

2.5

2.0

4.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

A

B

C 0.5

16.9

(13.5)

8.4

0.8

3.9

4.0

10.0

2.2

2.6

4.2

2.8

1.35

1.35
0.85

2.54

2.54

0.45

3.3

23.0

±

0.3

3.0

5.5

±

0.2

3.45

±

0.2

0.8

3.35

0.65

3.3

±

0.2

15.6

±

0.2

0.8

±

0.2

1.6

3.3

16.2

5.5

9.5

±

0.2

1.75

2.5

1.05

5.45

±

0.1

5.45

±

0.1

A

B

+0.2

–0.1

+0.2

–0.1

Damper Diodes

(Diode modulation Type)

For CRT 
Display

t

rr       

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

t

rr       

: I

F

/ I

R

 (=2 I

F

) 75% Recovery Point

           (ex. I

F

/ I

=100mA/200mA  75% Recovery Point)

1

2

Fig.
No.

Page where 

characteristic 

curve is shown

A: Damper Diodes

B: Compensation diode

A: Damper Diodes

B: Compensation diode

t

rr   

(

µ

s)

1

t

rr   

(

µ

s)

2

Allegro_Silicon_Diodes-html.html
background image

42

Division

Part Number

V

RM

(kV)

I

F (AV)

(mA)

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

max

I

F

(mA)

I

F

/ I

FP

(mA)

Ta = 100

°

C

I

R

(

µ

A)

I

(H)

(

µ

A)

t

rr    

(

µ

s)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tc

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

Mass

(g)

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

    2.0

350

350

  30

  30

  30

SHV-02

SHV-03S

SHV-03

SHV-10

SHV-12

SHV-14

SHV-16

SHV-20

SHV-24

SHV-06EN

SHV-08EN

SHV-10EN

SHV-12EN

SHV-08DN

SHV-10DN

SHV-12DN 

HVR-1X-40B

UX-F5B

SHV-05JS

SHV-08J

SHV-30J

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

350

350

10

10

10

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

10

10

10

10

10

0.13

0.13

0.16

0.33

0.33

0.33

0.33

0.33

0.33

0.17

0.17

0.20

0.20

0.17

0.20

0.20

2.5

2.5

0.16

0.20

0.33

     0.3

     0.3

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

     0.5

20

15

3

3

3

  2

  3

  3

10

12

14

16

20

24

  6

  8

10

12

  8

10

12

  9

  8

     2.5

     4.0

   15.0

For General 
Purpose

3

3

3

3

3

3

3

3

3

3

3

3

3

3

3

3

V

Z

 = 9.5 to 15kV

V

Z

 = 8.5kV min

V

 =   2.6  to   5.0 (@I

R

 = 100

µ

A)

V

 =   4.5  to   8.0 (@I

R

 = 100

µ

A)

V

Z

 = 16.0 to  30.0 (@I

R

 = 100

µ

A)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

 60 (Ta)

 60 (Ta)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.20

0.20

0.20

0.20

0.20

0.20

0.20

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

16

16

16

40

45

55

60

75

75

24

30

38

45

30

38

45

9

14

5

8

3

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +130

–40 to +130

–40 to +150

–40 to +150

–40 to +150

*
*
*
*
*
*
*
*
*
*
*
*
*

*

 

FBT High Voltage Rectifier Capacitive Load, Tc    100

°

C

High-Voltage Rectifier Diodes

t

rr      

: I

F

/ I

R

 (=I

F

)    90% Recovery Point

           (ex. I

F

/ I

=100mA/100mA  90% Recovery Point)

1

Fig.
No.

For Automotive 
Ignition Coil

For Inverter Type 
Microwave Oven

For General Type 
Microwave Oven

For Ultra-High 
Frequency 
Multi-layer FBT

For High 
Frequency 
Multi-layer FBT

For General FBT

1

Allegro_Silicon_Diodes-html.html
background image

High-Voltage Rectifier Diodes

43

3

27min

27min

2

0.

5

5

27min

27min

0.5

10

2.5

0.

5

27min

27min

2.5

6.5

2.5

27min

0.5

27min

SHV-02

SHV-03S

SHV-03

SHV-05JS

SHV-06EN

SHV-08EN

SHV-08DN

SHV-10EN

SHV-10DN

SHV-12EN

SHV-12DN

SHV-30J

Part Number

External dimensions

Marking (Cathode Mark)

Pattern

Color

White

White

White

Red

Red

White

Red

White

Red

White

White

Red

S

S

S

S

S

S

10

3

0.

6

27min

27min

12

3

0.

6

27min

27min

SHV-10

SHV-12

SHV-20

SHV-24

HVR-1X-40B

UX-F0B

SHV-08J

SHV-14

SHV-16

White

White

White

White

1.

2

22min

22min

21

±

1

7

±

0.5

7

±

0.5

27min

8

±

0.2

0.6

27min

3

The SHV series of diodes have been miniaturized by resin on the assumption fo remolding.  Measures against creeping discharge and humidity stress must be taken when using
these diodes.
The taping specifications of the SHV series differ from ordinary diodes. (P.10)

Allegro_Silicon_Diodes-html.html
background image

44

Part Number

V

Z

(V)

V

RDC

(V)

(–10

°

C)

I

TSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

I

R

(

µ

A)

I

(H)

(

µ

A)

V

R

 = V

RM

max

 V

R

 = V

RM

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

Mass

(g)

(typ)

RZ1030

RZ1040

RZ1055

RZ1065

RZ1100

RZ1125

EZ0150

RZ1150

RZ1155

RZ1175

RZ1200

10

10

10

10

10

10

10

10

10

10

10

0.03

0.05

0.07

0.08

0.10

0.14

0.18

0.18

0.18

0.22

0.30

100

101

100

100

101

0.44

0.44

0.44

0.44

0.44

0.44

0.2

0.44

0.44

0.44

0.44

30

30

30

30

30

30

30

30

30

30

30

   27  to  33 

   34  to  40 

   50  to  60 

   60  to  70 

  90 to 110

115 to 135

140 to 160

150 to 165

165 to 185

185 to 215

  20

  28

  40

  50

  80

105

125

125

   138.7

150

180

50

50

50

50

50

50

50

50

50

50

50

100

100

100

100

100

100

100

100

100

100

100

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

62.5

±

0.7

7.2

±

0.2

4.0

±

0.2

0.78

±

0.05

Cathode Mark

62.3

±

0.7

5.0

±

0.2

2.7

±

0.2

0.6

±

0.05

Cathode Mark

Avalanche Diodes with built-in Thyristor

Fig.
No.

Page where  characteristic  curve is shown

Equivalent circuit diagram

Allegro_Silicon_Diodes-html.html
background image

Part Number

V

Z

(V)

I

Z

 = 1mA

P

R

(W)

P.W = 5ms

V

DC

(V)

I

ZSM

(A)

Rectangular wave 
single shot

I

R

(

µ

A)

I

(H)

(

µ

A)

V

Z

R

Z

(

)

  I

Z

 = 1.0A     

      to 10A

V

F

(V)

max

V

R

 = V

DC

max

 V

R

 = V

DC

max

Tj

(

°

C)

Tstg

(

°

C)

Ta

(

°

C)

I

F

(A)

Mass

(g)

SFPZ-68

PZ 628

SPZ-G36

  10

500

    5

0.95

0.95

0.98

1.0

5.0

3.0

102

0.072

2.6

0.29

0.02

0.02

0.03

0.03 typ

0.03 typ

0.24 typ

  2

65

11

28

±

3.0

28

±

3.0

36

±

3.6

    50

1500

  450

20

20

30

1000

1000

1000

150

150

150

–40 to +150

–40 to +150

–40 to +150

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

45

56.0

±

0.7

1.3

±

0.05

10.0

±

0.2

C2

10.0

±

0.02

Cathode Mark

6.5

±

0.4

2.3

±

0.4

5.4

4.9

4.1

5.4

±

0.4

1.7

±

0.5

5.5

±

0.4

2.5

±

0.4

0.8

±

0.1

0.8

±

0.1

1.5 max

0.55

±

0.1

0.55

±

0.1

1.15

±

0.1

1.2max

2.29

±

0.5

2.29

±

0.5

0 to 0.25

0.5

±

0.2

2.9

0.16

1.37

5.0

0.7

4.5

±

0.2

0.05

2.0min

1.35

±

0.4

1.35

±

0.4

5.1

2.6

±

0.2

2.05

±

0.2

1.1

±

0.2

1.5

±

0.2

+0.4

–0.1

Power Zener Diodes

Fig.
No.

Page where  characteristic  curve is shown

Part Number
Polarity
Lot No.

1
2
3

1
2

3

10ms

Instantaneous

Temperature 
dependence

(V/

°

C)

I

Z

 = 1mA

Allegro_Silicon_Diodes-html.html
background image

Part Number

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

F

(mA)

I

F

(

µ

A)

max

V

F

(V)

Rth

 

(j-  )

(

°

C/W)

Tj

(

°

C)

Tstg

(

°

C)

Mass

(g)

20

50

50

50

0.2

1.2

0.6

0.9

VR-60SS

VR-61SS

SV-2SS

SV-3SS

SV-4SS

1000

1

10

70

100

100

1

10

30

20

20

20

20

20

0.3

0.3

0.3

0.3

0.3

103

15

     7.5

1.5 max

2.3

±

0.25

2.75

±

0.25

3.1

±

0.25

4.0 max

2.0 max

1.8

±

0.2

2.15

±

0.2

2.4

±

0.25

–40 to +100

–40 to +100

–40 to +100

–40 to +100

–40 to +100

46

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

Internal junction

Color indication

Part Number

SV-2SS

SV-3SS

SV-4SS

Red

Orange

White

White

62.3

±

1.0

5.0

±

0.2

2.7

±

0.2

0.6

VR-60SS

VR-61SS

Orange

Red

Orange

Symmetrical type Silicon Varistors

Fig.
No.

Page where  characteristic  curve is shown

Allegro_Silicon_Diodes-html.html
background image

 

External Dimensions    

Flammability: UL94V-0 or Equivalent   (Unit: mm)

Part Number

I

FSM

(A)

50Hz

Half-cycle Sinewave 

Single Shot

V

F

(V)

I

R

(

µ

A)

I

F

(mA)

I

F

(

µ

A)

max

V

R

(V)

Tj

(

°

C)

Tstg

(

°

C)

Mass

(g)

200

150

100

80

70

100

100

100

100

100

10

10

10

10

10

SV 02YS

SV 03YS

SV 04YS

SV 05YS

SV 06YS

1

70

1

70

1

70

1

70

1

70

20

20

20

20

20

103

0.3

0.3

0.3

0.3

0.3

30

16

12

10

8

1.2

±

0.2

1.5

±

0.25

1.8

±

0.2

2.3

±

0.25

2.35

±

0.2

3.0

±

0.3

3.0

±

0.3

3.8

±

0.4

3.5

±

0.4

4.5

±

0.45

–40 to +130

–40 to +130

–40 to +130

–40 to +130

–40 to +130

Rth

 

(j-  )

(

°

C/W)

47

Internal junction

Part Number

SV 02YS

SV 03YS

SV 04YS

SV 05YS

SV 06YS

62.3

±

2.0

5.0

±

0.2

2.7

±

0.2

0.6

Cathode Mark

Unsymmetrical type Silicon Varistors

Part Number
Manufacturing date
First character: Year (Last digit of year)
Second character: Month (1 to 9, O, N, D)
Manufacturing period
        First 10 days of month
        Middle 10 days of month
        Last 10 days of month

SV

02

08

Fig.
No.

Page where  characteristic  curve is shown

Cathode band
   Color: White


Allegro_Silicon_Diodes-html.html
background image

48

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

 0.3

0.5

0.7 

0.9

1.1

1.3

1.5

Forward Voltage   V

(V)

Forward Current   I

(A)

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

 0.3

0.5

0.7 

0.9

1.1

1.3

T  

a    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0     

 1

I

FMS

   Rating

 5

40    

30     

 50

 10

25     

V

F

— I

F

  Characteristics

 (Typical)

V

F

— I

F

  Characteristics

 (Typical)

t 1.6   P. C. B.

Solder Land

=

3.0 35

µ

mCu

20ms

I

FSM

 (A)

35     

20     

15     

10     

5     

0     

Overcurrent Cycles

 1

I

FMS

   Rating

 5

30     

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

 50

 10

25     

20ms

I

FSM

 (A)

20     

15     

10     

5     

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

t 1.6   P. C. B.

Solder Land

=

3.0 35

µ

mCu

SFPM-5 series

SFPM-6 series

10

1

0.1

0.01

0.001

20
10

1

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

V

F

— I

F

  Characteristics

 (Typical)

V

F

— I

F

  Characteristics

 (Typical)

0.5

0.7 0.9

1.1

1.3

 0.3

1.5

1.7

T  

a    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.1

0.3

10

1

0.01

0.001

0.1

10

1

0.01

0.001

50

0.1

10

1

0.01

0.001

40

0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1

T  

a    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.3

0.5

0.7

0.9

1.0

0

 1

I

FMS

   Rating

 5

45

30

 50

 10

20

20ms

10

40

0

 1

I

FMS

   Rating

 5

45

30

 50

 10

20

20ms

10

40

EM1B
EM1C

EM 1Y
EM 1Z
EM 1
EM 1A

0

 1

I

FMS

   Rating

 5

35

20

 50

 10

10

20ms

30

AM01 series

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

EM01 series

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

EM 1 series

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

L =10 mm

L =10 mm

P. C. B.

10mm

T  

a    100

°

C

=

    60

°

C

    25

°

C

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Characteristic Curves

Rectifier Diodes

Solder

Copper Foil

180 • 100 • 1.6 t

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Rectifier Diodes

49

V

F

— I

F

  Characteristics

 (Typical)

V

F

— I

F

  Characteristics

 (Typical)

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

0.5

0.6

0.7

0.9

1.0

1.1

0.8

5.0

1.0

0.5

0.1

0.05

0.5

0.7 0.9

1.1

1.3

50

1

0.1

10

 0.3

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.4

0.6 0.8

1.0

1.2

 0.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

 1

I

FMS

   Rating

 5

 50

 10

40

80

20

0

 1

I

FMS

   Rating

 5

40

 50

 10

30

10

50

RM 1B
RM 1C

RM 1Z
RM 1
RM 1A

20

0

 1

I

FMS

   Rating

 5

100

60

 50

 10

40

80

20

60

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

RM1Z
RM1
RM1A

RM1B
RM1C

RM 11 series

EM 2 series

RM 1 series

0.01

0.001

30

1

0.1

10

0.01

0.001

L =10 mm

L =10 mm

P.C.B

10mm

T  

a

    130

°

C

=

    100

°

C

    25

°

C

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

RM10Z

RM10
RM10A
RM10B

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

0.05

0.1

0.5

1.0

5.0

0.5

0.6

0.7

0.8

0.9

1.0

1.1

V

F

— I

F

  Characteristics

 (Typical)

0.05

0.1

0.5

1.0

5.0

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

50

RM10Z

RM10
RM10A
RM10B

 1

I

FMS

   Rating

 5

 50

 10

20ms

100

150

0

20

100

80

60

40

RM 10 series

RM 2 series

L =15mm

L =15mm

P.C.B

10mm

T  

a

    130

°

C

=

    25

°

C

    100

°

C

T  

a

    130

°

C

=

    25

°

C

    100

°

C

Ta — I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

Solder

Copper Foil

180 • 100 • 1.6 t

Solder

Copper Foil

180 • 100 • 1.6 t

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Rectifier Diodes

50

V

F

— I

F

  Characteristics

 (Typical)

0.4

0.6 0.8

1.0

1.2

 0.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

20

40

60

80

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

RO 2 series

1

10

50

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

V

F

— I

F

  Characteristics

 (Typical)

0

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

0

3.00

3.75

2.25

1.50

0.75

20

•20

•1t  Cu 

Heatsink on both sides

W

ithout Heatsink

0

25

50

75

100

125

150

0

0.7

1.4

2.1

2.8

3.5

20

•20

•1t  Cu 

Heatsink on both sides

Without Heatsink

0.5

0.7 0.9

1.1

 0.3

T  

a

    100

°

C

=

    25

°

C

1

0.1

10

100

0

1.0

2.0

Ta

=100

°

C

Ta

=

2

5

°

C

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

50

150

100

0

 1

I

FMS

   Rating

 5

120

 50

 10

80

40

160

200

RM4B
RM4C

RM 4Y
RM 4Z
RM 4
RM 4A

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

350

100

200

300

RM3C

RM 3 series

RM 4 series

RM 4M series

10

1

0.1

0.01

0.001

 0

0.2

0.4 

0.6

0.8

1.0

1.2

V

F

— I

F

  Characteristics

 (Typical)

10

100

0.1

0.01

0.001

T  

a

    150

°

C

=

    25

°

C

    100

°

C

1

L = 20 mm

L = 20 mm

P. C. B. 1.6 t
Solder Land
   5.5

5 mm

5 mm

5 mm

5 mm

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

100

20

30

40

50

60

70

80

90

75

10

0

2

4

6

8

90

105

120

135

150

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

Forward Power Loss   P

(W)

0

4

2

6

8

10

0

3

6

9

12

15

D.C.

T

t

T    150

°

C

=

j

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

FMM-2 series

Average Forward Current    I

F(AV) 

(A)

I

F (AV)

— P

F

  Characteristics

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Tc —I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Case Temperature  Tc 

(

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Rectifier Diodes

51

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

100

20

30

40

50

60

70

80

90

110

120

100

0

110

120

130

140

150

4

8

12

16

20

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

t / T   1/2

=

D.C.

Forward Power Loss   P

(W)

5

0

10

15

20

25

0

4

8

12

16

20

D.C.

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

T

t

T    150

°

C

=

j

FMM-3 series

Average Forward Current    I

F(AV) 

(A)

I

F (AV)

— P

F

  Characteristics

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Tc —I

F (AV)  

Derating

0

 1

I

FMS

   Rating

 5

40

 50

 10

20

20ms

80

RBV-401, 402

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

RBV-404, 406

RBV-408, 40C

0

 1

I

FMS

   Rating

 5

 50

 10

40

20ms

100

60

0

 1

I

FMS

   Rating

 5

40

 50

 10

20

20ms

80

60

80

20

60

V

F

— I

F

  Characteristics

 (Typical)

0.5

1.0

 0

1.5

2.0

1

10

100

0.1

0.01

V

F

— I

F

  Characteristics

 (Typical)

1

10

100

0.1

0.01

V

F

— I

F

  Characteristics

 (Typical)

1

10

100

0.1

0.01

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.5

1.0

 0

1.5

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.5

1.0

 0

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

RBV-406M

0

 1

I

FMS

   Rating

 5

 50

 10

40

20ms

120

100

80

20

60

V

F

— I

F

  Characteristics

 (Typical)

1

10

100

0.1

0.01

0.5

1.0

 0

1.5

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

    60

°

C

    100

°

C

    25

°

C

T  

a

    150

°

C

=

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Rectifier Diodes

52

RBV-406H

V

F

— I

F

  Characteristics

 (Typical)

1

10

100

0.1

0.01

0.5

1.0

 0

1.5

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

 1

I

FMS

   Rating

 5

 50

 10

40

20ms

120

100

80

20

60

Ta — I

F (AV)  

Derating

0

 1

I

FMS

   Rating

 5

40

 50

 10

20

20ms

120

RBV-601, 602

0

25

50

75

100

125

150

0

1.0

2.0

3.0

6.0

4.0

5.0

40

0

25

50

75

100

125

150

0

1.0

2.0

3.0

6.0

4.0

5.0

40

0

25

50

75

100

125

150

0

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-604, 606

RBV-608

0

 1

I

FMS

   Rating

 5

 50

 10

40

20ms

170

100

120

140

160

60

80

100

0

 1

I

FMS

   Rating

 5

60

90

 50

 10

30

20ms

150

120

80

20

60

V

F

— I

F

  Characteristics

 (Typical)

0.5

1.0

 0

1.5

1

10

100

0.1

0.01

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.5

1.0

 0

1.5

1

10

100

0.1

0.01

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.5

1.0

 0

1.5

1

10

100

0.1

0.01

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-606H

0

 1

I

FMS

   Rating

 5

 50

 10

40

20ms

140

120

100

80

20

60

1.4

V

F

— I

F

  Characteristics

 (Typical)

0.2

0.4

0.6

0.8

1.0

1.2

 0

1

10

50

0.1

0.001

0.01

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    27

°

C

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Case Temperature  Tc 

(

°

C)

Case Temperature  Tc 

(

°

C)

Case Temperature  Tc 

(

°

C)

Case Temperature  Tc 

(

°

C)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Rectifier Diodes

53

0

 1

I

FMS

   Rating

 5

 50

 10

100

20ms

150

50

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

0

20

40

60

80 100 120 140 160

20

40

60

80

100

120

140

160

0

3

6

9

12

15

0

2

4

6

8

10

12

14

0

20

40

60

80

100 120 140 160

0

3

6

9

12

15

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

t / T   1/ 3, Sinewave

=

t / T   1/6

=

t / T   1/2

=

D.C.

0

0

2

4

6

8

10

12

14

16

Average Forward Current    I

F(AV) 

(A)

Average Forward Current    I

F(AV) 

(A)

Average Forward Current    I

F(AV) 

(A)

Average Forward Current    I

F(AV) 

(A)

0

2

4

6

8

10

12

14

10

20

30

40

50

Forward Power Loss   P

(W)

Forward Power Loss   P

(W)

Forward Power Loss   P

(W)

Forward Power Loss   P

(W)

10

20

30

40

50

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

T    150

°

C

=

j

0

0

2

4

6

8

10

12

14

16

10

20

30

40

50

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

T    150

°

C

=

j

0

 1

I

FMS

   Rating

 5

 50

 10

200

100

20ms

150

50

RBV-1506S

0

 1

I

FMS

   Rating

 5

 50

 10

60

40

20ms

80

20

RBV-1306

RBV-1506

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

T    150

°

C

=

j

Tc —I

F (AV)  

Derating

Tc —I

F (AV)  

Derating

Tc —I

F (AV)  

Derating

Tc —I

F (AV)  

Derating

I

F (AV)

— P

F

  Characteristics

I

F (AV)

— P

F

  Characteristics

I

F (AV)

— P

F

  Characteristics

I

F (AV)

— P

F

  Characteristics

0

 1

I

FMS

   Rating

 5

 50

 10

350

200

20ms

300

100

250

150

50

0

20

40

60

80 100 120 140 160

0

25

15

5

10

20

t / T   1/ 3, Sinewave

=

t / T   1/6

=

t / T   1/2

=

D.C.

0

0

4

8

12

16

20

24

28

32

20

40

60

80

100

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

T    150

°

C

=

j

RBV-2506

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Ambient Temperature   Ta (

°

C)

Ambient Temperature   Ta (

°

C)

Ambient Temperature   Ta (

°

C)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Forward Current   I

(A)

Peak For

ward Surge Current    I

FSM 

(A)

Forward Current   I

(A)

Peak For

ward Surge Current    I

FSM 

(A)

Forward Current   I

(A)

Forward Current   I

(A)

Peak For

ward Surge Current    I

FSM 

(A)

Forward Current   I

(A)

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

54

0

25

50

75

100

125

150

0

0.4

0.2

1.0

0.4

0.6 0.8

1.0

 0.2

1.2

1.4

1.6

T  

a

    150

°

C

=

    120

°

C

    100

°

C

    70

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

8

20

16

12

4

0.6

0.8

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

AS01 series

1

10

20

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

ES01F

L =10mm

L =10mm

P.C.B

10mm

0.6

1.0 1.4

1.8

 0.2

2.2

2.6

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 

5

 

50

 10

20ms

30

20

10

ES01F

ES01Z
ES01
ES01A

0.4

0.2

1.0

0.6

0.8

ES01 series

1

10

30

0.1

0.01

0.001

ES01Z
ES01
ES01A

Ta — I

F (AV)  

Derating

0.2

0.6

1.0

1.4

1.8

Ta

=130

°

C

100

°

C

25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.1

0.01

0.001

1

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

15

10

5

0.4

0.6 0.8

1.0

 0.2

1.2

1.4

1.6

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

1

10

0.1

0.01

0.001

AU 01 series

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

25

15

20

10

5

 0.3

0.5

0.7 

0.9

1.1

1.3

 0.1

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

1

20

0.1

0.01

0.001

10

AU 02 series

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.05

0.10

0.15

0.20

0.25

L =10mm

L =10mm

P.C.B

10mm

0

 1

I

FMS

   Rating

 5

 50

 10

15

10

5

20ms

EU01

 series

 0

0.2

0.6  0.8

1.2 1.4

1.8

V

F

— I

F

  Characteristics

 (Typical)

1

10

0.1

0.01

0.001

T  

a

    150

°

C

=

    25

°

C

    100

°

C

0.4

1.0

1.6

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

(ES01F)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Solder

Copper Foil

180 • 100 • 1.6 t

Solder

Copper Foil

180 • 100 • 1.6 t

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Overcurrent Cycles

Forward Current   I

(A)

Forward Current   I

(A)

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

55

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

30

20

0.2

0.5

1.0

1.5

V

F

— I

F

  Characteristics

 (Typical)

T     100

°

C

a =

60

°

C

25

°

C

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

1

10

0.1

0.01

0.001

EH 1 series

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

ES 1F

0.6

1.0 1.4

1.8

 0.2

2.2

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 

5

 

50

 10

20ms

30

20

10

ES 1F

ES 1Z
ES 1
ES 1A

0

0.4

0.2

1.0

0.6

0.8

ES 1Z
ES 1
ES 1A

ES 1 series

1

10

40

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

L =10mm

L =10mm

P.C.B

10mm

0.3

0.5 0.7

0.9

1.1

 0.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 5

 50

 10

15

10

5

20ms

EU02

 series

1

10

0.1

0.01

0.001

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.05

0.10

0.15

0.20

0.25

0

 1

I

FMS

   Rating

 5

 50

 10

15

10

5

20ms

0.2

0.4

0.6 0.8

1.0

1.2

1.4 1.6 1.8

T  

a

    150

°

C

=

    25

°

C

    100

°

C

V

F

— I

F

  Characteristics

 (Typical)

EU 1

 series

1

20

0.1

0.01

0.001

10

Ta — I

F (AV)  

Derating

0.2

0.6

1.0

1.4

1.8

Ta

=130

°

C

100

°

C

25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.1

0.01

0.001

1

(ES 1F)

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

0

 1

I

FMS

   Rating

 5

 50

 10

15

10

5

20ms

0.3

0.5 0.7

0.9

1.1

 0.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

EU 2

 series

1

10

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Solder

Copper Foil

180 • 100 • 1.6 t

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

56

0

25

50

75

100

125

150

0

0.1

0.2

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

20

0.8

1.2

1.4

1.6

1.8

5

50

500

Ta

=130

°

C

100

°

C

10

100

0.6

1.0

2

5

°

C

V

F

— I

F

  Characteristics

 (Typical)

5

15

0.25

0.15

0.05

RC 2

Ta — I

F (AV)  

Derating

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

35

25

30

20

15

5

0.6

0.8

0.9

1.0

1.1

0.1

0.5

0.7

Ta

=130

°

C

100

°

C

25

°

C

0.5

1.0

5.0

0.05

V

F

— I

F

  Characteristics

 (Typical)

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

RH 1 series

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

25

15

30

20

10

5

RS 1 series

 0

0.2

0.4 

0.6

1.0

1.2

1.4

V

F

— I

F

  Characteristics

 (Typical)

1

10

0.1

0.01

0.001

T  

a

    150

°

C

=

    25

°

C

    100

°

C

0.8

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

0.4

0.6 0.8

1.0

1.2

 0.2

V

F

— I

F

  Characteristics

 (Typical)

T  

a

    150

°

C

=

    70

°

C

      100

°

C

    25

°

C

0

 1

I

FMS

   Rating

 5

 50

 10

25

10

5

20ms

15

20

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

EU 2YX

1

10

0.1

0.01

0.001

20

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.15

0.45

0.6

V

F

— I

F

  Characteristics

 (Typical)

0.6

0.8

0.9

1.0

1.1

0.1

0.5

0.7

Ta

=130

°

C

100

°

C

25

°

C

0.5

1.0

5.0

0.05

1.2

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

15

10

5

RF 1 series

0.3

RF 1

 series

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

57

0

25

50

75

100

125

150

0

0.15

0.1

0.15

0.2

0.25

0.6

0.05

1.1

V

F

— I

F

  Characteristics

 (Typical)

0.6

0.8

0.9

1.0

1.1

0.1

0.5

0.7

Ta

=130

°

C

100

°

C

25

°

C

0.5

1.0

5.0

0.05

1.2

V

F

— I

F

  Characteristics

 (Typical)

0.7

0.1

0.5

1.0

2.0

1.0

0.8

0.9

Ta

=130

°

C

25

°

C

100

°

C

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

15

10

5

20

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

15

10

5

RU 1 series

RU 2 series

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

1.5

1.2

0.9

0.6

0.3

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

15

10

5

20

0.3

0.5 0.7

0.9

1.1

 0.1

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

RU 2M series

1

10

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

1.5

60

1.2

0.9

0.6

0.3

0.3

0.5 0.7

0.9

1.1

 0.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

50

10

20

30

40

RU 20A

1

10

20

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

10

20

30

0.3

0.5

0.7

0.9

1.1

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

RU 2YX

1

10

20

0.1

0.02

L =10mm

L =10mm

P. C. B.

10mm

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Solder

Copper Foil

180 • 100 • 1.6 t

Allegro_Silicon_Diodes-html.html
background image

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

58

 1

I

FMS

   Rating

 5

 50

 10

20ms

0

25

5

10

15

20

0

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

L =10 mm

L =10 mm

P. C. B.

10mm

RU3, RU3A,RU3C,

RU3B

0.2

0.4

0.6

0.8

1.0

1.2

1.4

T  

a

    100

°

C

=

    25

°

C

    50

°

C

V

F

— I

F

  Characteristics

 (Typical)

RU 3 series

1

10

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.5

0.1

1.5

2.0

L =10mm

L =10mm

P.C.B

10mm

0.3

0.5 0.7

0.9

1.1

 0.1

V

F

— I

F

  Characteristics

 (Typical)

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

 1

I

FMS

   Rating

 5

 50

 10

50

40

20ms

30

20

10

RU 3M

 series

1

10

20

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

L =10mm

L =10mm

P.C.B

10mm

0.3

0.5 0.7

0.9

 0.1

T  

a

    150

°

C

=

    50

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 5

 50

 10

50

40

20ms

30

20

10

RU 3YX

1

10

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

1.0

2.0

2.5

3.0

3.5

0

 1

I

FMS

   Rating

 5

 50

 10

200

80

40

20ms

120

160

0.3

0.5 0.7

0.9

 0.1

1.0

1.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

1.5

0.5

60

Without Heatsink

180

140

100

60

20

RU 30
RU 30A

With Heatsink

5mm

20 •20 • 1t Cu

5mm

RU 30

 series

1

50

0.1

0.01

0.001

10

Ta — I

F (AV)  

Derating

RU 30Y
RU 30Z

RU 30
RU 30A

RU 30Y
RU 30Z

0

30

60

90

120

150

 1

I

FMS

   Rating

 5

 50

 10

20ms

RU 31, 31A

DC

t / T=1/ 3

, Sinewave

t

T

Tj =150

°

C

0

1

2

3

4

5

Forward Power Loss   P

(W)

0

0.5

1

1.5

2

3

2.5

Average Forward Current    I

F(AV) 

(A)

I

F (AV)

— P

F

  Characteristics

t / T=1/6

t / T=1/2

DC

t / T=1/ 3

, Sinewave

t

T

Tj =150

°

C

0

0.5

1

1.5

2

2.5

3

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

70

90

110

130

150

T  —I

F (AV)  

Derating

t / T=1/6

t / T=1/2

Lead Temperature   T   (

°

C)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Solder

Copper Foil

180 • 100 • 1.6 t

Solder

Copper Foil

180 • 100 • 1.6 t

Solder

Copper Foil

180 • 100 • 1.6 t

Allegro_Silicon_Diodes-html.html
background image

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

59

0

25

50

75

100

125

150

0

1.0

2.0

3.0

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

60

5mm

20 •20 • 1t Cu

5mm

V

F

— I

F

  Characteristics

 (Typical)

0.4

0.8 1.2

1.6

 0

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

20

30

40

50

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

20

30

40

50

3.5

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

20

30

40

50

60

70

RU 4Y, 4Z

RU 4, 4A, 4B

RU 4C

1

10

50

0.1

0.01

0.001

V

F

— I

F

  Characteristics

 (Typical)

0.4

0.8 1.2

1.6

 0

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

10

50

0.1

0.01

0.001

V

F

— I

F

  Characteristics

 (Typical)

0.4

0.8 1.2

1.6

 0

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

10

50

0.1

0.01

0.001

0

25

50

75

100

125

150

0

1.0

0.5

1.5

2.0

2.5

3.0

60

5mm

20 •20 • 1t Cu

5mm

0

25

50

75

100

125

150

0

1.0

0.5

1.5

2.0

60

5mm

20 •20 • 1t Cu

5mm

2.5

With Heatsink

W

ithout Heatsink

With Heatsink

W

ithout Heatsink

With Heatsink

W

ithout H

eatsink

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

Ta — I

F (AV)  

Derating

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

100

0

25

50

75

100

125

150

0

1.0

2.0

4.0

60

3.0

Without Heatsink

With Heatsink

20

30

40

50

60

70

80

90

5mm

20 •20 • 1t Cu

5mm

RU 4YX 

 0

0.2

0.4 

0.6

1.0

V

F

— I

F

  Characteristics

 (Typical)

1

100

0.1

0.01

0.001

T  

a

    150

°

C

=

    25

°

C

    100

°

C

10

0.8

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

1.0

2.0

3.0

60

Without Heatsink

With Heatsink

3.5

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

5mm

20 •20 • 1t Cu

5mm

0

 1

I

FMS

   Rating

 5

 50

 10

20ms

10

20

30

40

50

60

70

RU 4M series

1

10

50

0.1

0.01

0.001

Ta — I

F (AV)  

Derating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

60

Tc —I

F (AV)  

Derating

Tc —I

F (AV)  

Derating

Tc —I

F (AV)  

Derating

 1

I

FMS

   Rating

 5

 50

 10

20ms

100

80

60

40

20

0

70

80

90

110

8

0

100

150

10

6

4

2

120 130 140

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

t / T   1/2

=

D.C.

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

FMU-G2YXS

1

10

50

0.1

0.01

0.001

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Forward Power Loss   P

F  

(W)

Forward Power Loss   P

F  

(W)

0

 1

I

FMS

   Rating

 5

20

 50

 10

10

20ms

30

0

 1

I

FMS

   Rating

 5

 50

 10

10

20ms

40

30

20

70

80

90

110

4

0

100

150

5

3

2

1

120 130 140

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

t / T   1/2

=

D.C.

70

80

90

110

8

0

100

150

10

6

4

2

120 130 140

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

t / T   1/2

=

D.C.

0.1 0.3

0.5

0.7 0.9

1.1 1.3

1.5 1.7

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

FMU-G16S

FMU-G26S

1

10

50

0.1

0.01

0.001

1

10

50

0.1

0.01

0.001

0

 1

I

FMS

   Rating

 5

 50

 10

30

20ms

10

D.C.

0

10

20

0

1

2

3

4

5

I

F (AV)

— P

F

  Characteristics

Average Forward Current    I

F(AV) 

(A)

t / T   1/6

=

t / T   1/2

=

Tj =150

°

C

T

t

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

25

20

15

5

t / T   1/ 3

, Sinewave

=

FMU-1

 series

1

10

20

0.1

0.01

0.001

0

12

20

0

2

4

6

8

10

16

8

4

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

D.C.

t / T   1/2

=

I

F (AV)

— P

F

  Characteristics

Average Forward Current    I

F(AV) 

(A)

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 5

 50

 10

40

20

20ms

30

10

Tj =150

°

C

T

t

FMU-2

 series

1

10

50

0.1

0.01

0.001

Case Temperature  Tc 

(

°

C)

Case Temperature  Tc 

(

°

C)

Case Temperature  Tc 

(

°

C)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

61

0

30

50

0

4

8

12

16

20

40

20

10

D.C.

t / T   1/6

=

t / T   1/ 3

, Sinewave

=

t / T    1/2

=

I

F (AV)

— P

F

  Characteristics

Average Forward Current    I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

0

 1

I

FMS

   Rating

 5

 50

 10

80

40

20ms

60

20

10

30

50

70

Tj =150

°

C

T

t

FMU-3

 series

1

10

50

0.1

0.01

0.001

I

FSM

 (A)

Allegro_Silicon_Diodes-html.html
background image

62

0

25

50

75

100

125

150

0

0.1

0.05

0.15

0.2

AP01C

0

 1

I

FMS

   Rating

 5

 50

 10

3

20ms

5

2

1

4

1

0.1

0.01

0.001

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

1.0 2.0

3.0

 0

4.0

T  

a

    150

°

C

=

    100

°

C

    25

°

C

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

0

25

50

75

100

125

150

0

0.1

0.05

0.15

0.2

EP01C

0

 1

 5

 50

 10

3

20ms

5

2

1

4

10

1

0.1

0.01

0.001

L =10mm

L =10mm

P.C.B

10mm

2.0

4.0

6.0

8.0

 0

10.0

T  

a

    150

°

C

=

    100

°

C

    25

°

C

    70

°

C

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.4

0.6 0.8

1.0

 0.2

1.2

1.4

1.6

0.4

0.6 0.8

 0.2

1.0

1.2

1.4

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

t 1.6   P. C. B.

Solder Land

=

3.0 35

µ

mCu

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

t 1.6   P. C. B.

Solder Land

=

3.0 35

µ

mCu

0     

 1

 5

 50

 10

25     

20ms

20     

15     

10     

5     

0     

 1

 5

 50

 10

25     

20ms

20     

15     

10     

5     

SFPL -- 62

SFPX-- 62

SFPL -- 52

1

10

0.1

0.01

0.001

1

10

0.1

0.01

0.001

20

0

40

160

80

120

200

0.0001

0.001

1

0.1

0.01

2

t / T = 1/ 3, Sinewave

t / T =1/2

D.C.

t / T =1/6

0

0.5

1.0

1.5

0

0.5

1.0

1.5

2.0

2.5

T

t

Tj =150ºC

V

R

=200V

50

70

90

110

130

150

0

0.5

1.0

1.5

T

t

Tj =150ºC

t / T =1/2

D.C.

t / T =1/3

t / T =1/6

Sinewave

0.001

0.01

0.1

1

10

30

0

0.4

0.8

1.2

1.6

Ta=150

°

C

100

°

C

60

°

C

25

°

C

Ta =150

°

C

100

°

C

60

°

C

25

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F(AV) 

(A)

180•100•1.6 t

Solder

Copper Foil

T  — I

F (AV)

   Characteristics   

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

63

SPX-G32S

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

120

125

130

135

140

145

150

0

1

2

3

V

R

=200V

4

SPX-62S

 1

 5

 50

 10

20ms

50

80

60

40

20

0

40

30

20

10

0

 1

 5

 50

 10

20ms

60

80

100

120

140

160

0

2

6

4

8

V

R

=200V

10

t / T   1/3

=

t / T   1/2

=

t / T   1/6

=

Sinewave

D.C.

t / T   1/3

=

t / T   1/2

=

t / T   1/6

=

Sinewave

D.C.

    150

°

C

T  

a

=

    100

°

C

    60

°

C

    25

°

C

    150

°

C

T  

a

=

    100

°

C

    60

°

C

    25

°

C

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

0     

 1

 5

 50

 10

20ms

5     

AG 01 series

25     

L =10 mm

L =10 mm

P. C. B.

10mm

1

30

0.1

0.01

0.001

AG01Y

AG01Z, AG01

AG01A

20     

15     

10     

 AG01Y

AG01Z, 
AG01, 
AG01A

0.6

1.0 1.4

1.8

 0.2

2.2

2.6

3.0

T  

a

    150

°

C

=

    70

°

C

    100

°

C

    25

°

C

10

0     

 

1

 

5

30     

 50

 10

25     

20ms

20     

15     

10     

5     

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

EG01Y, EG01Z, EG01

EG01Y

EG01Z, EG01

L =15 mm

L =15mm

P. C. B.

10mm

1

0.1

0.01

0.001

10

 EG01Y

 EG01Z, EG01

0.6

1.0 1.4

1.8

 0.2

2.2

2.6

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

150

AL01Z

5

20

15

10

25

0

 1

 5

 50

 10

20ms

10

1

0.1

0.01

0.001

0

0

25

50

75

150

0.2

0.4

0.6

0.8

1.0

125

100

L =10 mm

L =10 mm

P.C.B

10 mm

0.4

0.6 0.8

1.0

 0.2

1.2

1.4

1.6

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta — I

F (AV)  

Derating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

 

Allegro_Silicon_Diodes-html.html
background image

64

0

25

50

75

100

125

150

0

0.1

0.2

0.3

0.4

0.5

EG01A

0     

 1

 5

 50

 10

20ms

2     

4     

6     

8     

10     

L =15mm

L =15mm

P. C. B.

10 mm

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T  

a

    25

°

C

=

100

10

1

0.1

1000

0.01

0.001

0

25

50

75

100

125

0

0.1

0.2

0.3

0.4

0.5

0     

 1

 5

 50

 10

20ms

2     

EG 01C

4     

6     

8     

10     

L =15mm

L =15mm

P.C.B

10 mm

1.0

2.0 3.0

4.0

 0

5.0

6.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

10

0.1

0.01

0.001

0     

 

1

 

5

30     

 50

 10

25     

 EG 1Y

20ms

20     

15     

10     

5     

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

EG 1Y, EG 1Z, EG 1

EG 1Y

EG 1Z, EG 1

 EG 1Z, EG 1

L =15mm

L =15 mm

P. C. B.

10 mm

0.8

1.2 1.6

2.0

 0.4

2.4

2.8

T  

a

    25

°

C

=

1

20

0.1

0.01

0.001

10

EN01Z

100

0

1.0

0.5

110

120

130

140

150

t

T

T    150

°

C

j

=

V     200V

=

R

DC

t / T    1/6

=

t / T    1/ 3

=

Half-cycle sinewave

t / T    1/2

=

10

1

0.1

0.01

0.001

0

0.2

0.8

1.4

1.2

1.0

0.6

0.4

50

0

0

0.5

1.0

1.5

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

DC

t / T    1/6

=

1.0

0.5

t

T

T    150

°

C

j

=

    150

°

C

T  

a

=

    60

°

C

    100

°

C

    25

°

C

EL02Z

5

20

15

10

25

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0

0

25

50

75

150

0.3

0.6

0.9

1.2

1.5

125

100

L =10 mm

L =10 mm

P.C.B

10 mm

Copper Foil
(35

µ

mt)

0.5

1.0

1.5

 0

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Forward Power Loss   P

F   

(W)

I

F(AV)

—P

F

 Characteristics

Average Forward Current   I

F (AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

 

65

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

EG 1A

0     

 1

 5

 50

 10

20ms

2     

4     

6     

8     

10     

0.8

1.2 1.6

2.0

 0.4

2.4

2.8

T  

a

    25

°

C

=

1

0.1

0.01

0.001

10

L =15mm

L =15 mm

P. C. B.

10 mm

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

RG 1C

0     

 1

 5

 50

 10

20ms

2     

4     

6     

8     

10     

1

0.1

0.01

0.001

10

L =15mm

L =15 mm

P.C.B

10 mm

1.0

2.0 3.0

4.0

 0

5.0

6.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0     

 1

 5

 50

 10

20ms

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

RG10 series

RG10Y

50     

L =15 mm

L =15mm

P.C.B

10 mm

40     

30     

20     

RG10A

RG10

60

10     

0.4

0.8 1.2

1.6

 0

2.0

2.4

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

20

0.1

0.01

0.001

10

EL 1Z

4

16

12

8

20

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

0

0

25

50

75

150

0.3

0.6

0.9

1.2

1.5

125

100

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

0.2 0.4

0.6 0.8

1.0 1.2

1.4

1.6

1.8

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

EL 1

4

16

12

8

20

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

0.8

0.4

2.0

1.6

1.2

 0

2.4

0

0

25

50

75

150

0.3

0.6

0.9

1.2

1.5

125

100

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

T  

a

    150

°

C

=

    60

°

C

      90

°

C

    25

°

C

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

66

RG 2Y

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

60

0     

 1

 5

 50

 10

20ms

50     

40     

30     

20     

10     

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

20

0.1

0.01

0.001

10

RN 1Z

10

1

0.1

0.01

0.001

0

0.2

0.8

1.4

1.2

1.0

0.6

0.4

50

DC

t / T    1/6

=

t / T    1/ 3

=

Half-cycle sinewave

t / T    1/2

=

t

T

T    150

°

C

j

=

V     200V

=

R

100

0

1.5

0.5

110

120

130

140

150

1.0

t / T    1/6

=

Half-cycle sinewave

t / T    1/ 3, 

=

t / T    1/ 2

=

DC

t

T

T    150

°

C

j

=

0

0

0.5

1.5

2

1

1.0

T  

a

=

    60

°

C

    100

°

C

    25

°

C

RL 10Z

6

24

18

12

30

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

0

0

25

50

40

75

150

0.4

0.8

1.2

1.6

2.0

125

100

0.2 0.4

0.6 0.8

1.0 1.2

1.4

1.6

1.8

L =15 mm

L =15 mm

P.C.B

10 mm

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

RP 1H

0.1

0.5

0.01

0.001

0

1

2

3

4

5

6

7

0

25

50

75

100

125

150

0

0.02

0.04

0.06

0.08

0.1

RU 1P

0

25

50

75

100

125

150

0

0.4

0.3

0.2

0.1

0     

 1

 5

 50

 10

20ms

1     

2     

3     

4     

5     

0     

 1

 5

 50

 10

20ms

2     

4     

6     

8     

10     

    0.001 

    0.01 

    0.1 

   2 

    1 

 0

1.0

2.0

3.0

4.0

T  

a

    100

°

C

=

    25

°

C

    150

°

C

T  

a

=

    100

°

C

    25

°

C

L =10mm

L =10mm

P.C.B

10mm

    150

°

C

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

67

0     

 1

 5

 50

 10

20ms

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

RG 2Z

RG 2

50     

1

0.1

0.01

0.001

40     

30     

20     

10

60

10     

0

25

50

75

100

125

150

0

0.3

0.6

0.9

1.2

1.5

60

0     

 1

 5

 50

 10

20ms

50     

40     

30     

20     

10     

0.6

1.0 1.4

1.8

 0.2

2.2

2.6

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.8

1.2 1.6

2.0

 0.4

2.4

2.8

max  

min  

20

1

0.1

0.01

0.001

10

RG 2A

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

60

0     

 1

 5

 50

 10

20ms

50     

40     

30     

20     

10     

0.2

0.4

0.6

0.8

1.0

1.2

T  

a

    25

°

C

=

10

1

0.1

0.001

1000

100

0.01

0

25

50

75

100

125

150

0

0.4

0.8

1.2

1.6

2.0

 1

 5

 50

 10

20ms

RL 2Z

RL 2

40

L =10 mm

L =10 mm

P.C.B

10 mm

0

25

50

75

100

125

150

0

0.4

0.8

1.2

1.6

2.0

L =10 mm

L =10 mm

P.C.B

10 mm

0.4

0.6 0.8

1.0

 0.2

1.2

1.4

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

T  

a

    150

°

C

=

    25

°

C

    100

°

C

1

10

20

0.1

0.01

0.001

0.5

1.0 1.5

2.0

 0

2.5

3.0

1

10

20

0.1

0.01

0.001

30

20

10

0

0     

 

1

 

5

30     

 50

 10

25     

20ms

20     

15     

10     

5     

180•100•1.6 t

Solder

Copper Foil

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

 

Allegro_Silicon_Diodes-html.html
background image

 

 

Half-cycle sinewave

68

RN 2Z

t / T    1/6

=

t / T    1/ 3, 

=

t / T    1/2

=

DC

0

0

1.0

2.0

2.0

1.5

0.5

t

T

T    150

°

C

j

=

1.0

0.5

1.5

10

1

0.1

0.01

0.001

0

0.2

0.8

1.4

1.2

1.0

0.6

0.4

50

DC

t / T    1/6

=

t / T    1/ 3

=

Half-cycle sinewave

t / T    1/2

=

100

0

2.0

1.0

110

120

130

140

150

t

T

T    150

°

C

j

=

V     200V

=

R

1.5

0.5

T  

a

=

    60

°

C

    100

°

C

    25

°

C

0     

 

1

 

5

30     

 50

 10

25     

20ms

20     

15     

10     

5     

RL 2A

0

25

50

75

100

125

150

0

0.4

0.8

1.2

1.6

2.0

L =10 mm

L =10 mm

P.C.B

10 mm

T  

a

    150

°

C

=

    25

°

C

    100

°

C

0.5

1.0 1.5

2.5

2.0

 0

3.0

3.5

1

10

20

0.1

0.01

0.001

0

25

50

75

100

125

150

0

1

2

3

4

5

0     

 

1

 

5

60     

 50

 10

50     

20ms

40     

30     

20     

 1

 5

 50

 10

20ms

RL 3Z

RL 3

RL 3A

80

0.4 0.6 0.8

1.0

 0

 0.2

1.2 1.4

1.6

T  

a

    150

°

C

=

    25

°

C

    100

°

C

1

10

50

0.1

0.01

0.001

0.4

0.8

 0

1.6

1.2

2.0

1

10

50

0.1

0.01

0.001

0.5

1.0 1.5

2.0

 0

2.5

3.0

1

10

20

0.1

0.01

0.001

60

40

20

0

20 • 20 • 1t Cu

5mm

5mm

With Heatsink

Without H

eatsink

60

0

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

2.5

20 • 20 • 1t Cu

5mm

5mm

With Heatsink

60

 1

 5

 50

 10

20ms

80

60

40

20

0

10     

0

25

50

75

100

125

150

0

1

2

3

4

5

20 • 20 • 1t Cu

5mm

5mm

With Heatsink

Without H

eatsink

60

T  

a

    150

°

C

=

    25

°

C

    100

°

C

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    150

°

C

180•100•1.6 t

Solder

Copper Foil

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Forward Power Loss   P

F   

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

69

0     

 1

 5

 50

 10

20ms

RG 4Y

RG 4Z, RG 4, RG 4A

RG 4C

1

0.1

0.01

0.001

80     

60     

40     

10

0

25

50

75

100

125

150

0

0.4

0.8

1.2

1.6

2.0

40

20     

0     

 1

 5

 50

 10

20ms

60     

40     

30     

20     

10     

0

25

50

75

100

125

150

0

60

0     

 1

 5

 50

 10

20ms

100     

80     

60     

40     

20     

20

1

2

3

4

5

With Heatsink

Without Heatsink

20 • 20 • 1t Cu

5mm

5mm

0

25

50

75

100

125

150

0

60

1

2

3

4

5

With Heatsink

Without Heatsink

20 • 20 • 1t Cu

5mm

5mm

20 • 20 • 1t Cu

5mm

5mm

RG 4Z, RG 4

RG 4A

70     

50     

30     

10     

RG 4Z, RG 4

RG 4A

50     

0.8

1.2

1.6

2.0

 0.4

2.4

2.8

T  

a

    25

°

C

=

0.1

0.5

0.7

0.9

1.1

1.3

1.5 1.7

0.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.6

1.0 1.4

1.8

 0.2

2.2

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

1

0.1

0.01

0.001

10

30

1

0.1

0.01

0.001

6

RN 3Z

t / T    1/6

=

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

DC

DC

t / T    1/6

=

t / T    1/ 3

=

Half-cycle sinewave

t / T    1/2

=

10

1

0.1

0.01

0.001

0

0.2

0.8

1.4

1.2

1.0

0.6

0.4

50

0

0

1

3

100

0

110

120

130

140

150

t

T

T    150

°

C

j

=

t

T

T    150

°

C

j

=

V     200V

=

R

1

2

3

2

1

2

3

    150

°

C

T  

a

=

    60

°

C

    100

°

C

    25

°

C

RX 3Z

 1

 5

 50

 10

20ms

80

60

40

20

0

130

120

100

110

90

150

140

0

1.0

0.5

2.0

1.5

2.5

3.0

V

R

=

200V

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Forward Power Loss   P

F   

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

 

Allegro_Silicon_Diodes-html.html
background image

70

RN 4Z

t / T    1/6

=

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

DC

DC

t / T    1/6

=

t / T    1/ 3

=

Half-cycle sinewave

t / T    1/2

=

10

1

0.1

0.01

0.001

0

0.2

0.8

1.4

1.2

1.0

0.6

0.4

50

0

0

100

0

110

120

130

140

150

t

T

T    150

°

C

j

=

t

T

T    150

°

C

j

=

V     200V

=

R

1

2

3

4

5

1

2

3

1

2

3

    150

°

C

T  

a

=

    60

°

C

    100

°

C

    25

°

C

0

25

50

75

100

125

150

0

1

2

3

4

5

 1

 5

 50

 10

20ms

RL 4Z

RL 4A

80

60

40

20

0

With Heatsink

Without Heatsink

60

 1

 5

 50

 10

20ms

80

60

40

20

0

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

1

10

30

0.1

0.01

0.001

0.5

1.0 1.5

2.0

0

2.5

3.0

T  

a

    150

°

C

=

    25

°

C

    100

°

C

1

10

50

0.1

0.01

0.001

130

120

110

100

150

140

0

1.0

0.5

2.0

0.5

2.5

3.0

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

t

T

V

R

=600V

Tj=150

°

C

FMC-G28S

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

150

2

3

100

110

120

130

140

t / T=1/6

t / T=1/2

D.C.

1

t / T=1/3, 

Sinewave

0

3

8

12

0

1

2

t / T=1/6

t / T=1/2

D.C.

4

Tj=

150

°

C

T

t

t / T=1/3, 

Sinewave

FMC-G28SL

0

5

10

15

20

0

1

2

3

4

5

D.C.

Tj =

150

°

C

T

t

t / T=1/6

t / T=1/3, 

Sinewave

t / T=1/2

0

1

2

3

4

5

50

70

90

110

130

150

t / T=1/6

t / T=1/3

D.C.

t / T=1/2

Sinewave

10

50

40

20

30

60

0

 1

 5

 50

 10

20ms

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Average Forward Current    I

F

(AV) 

(A)

Lead Temperature   T   (

°

C)

T  — I

F (AV)

   Characteristics   

Forward Power Loss   P

F   

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

 

 

71

FMG-G26S

10

20

50

40

30

0

 1

 5

 50

 10

20ms

FMG-G2CS

5

25

30

20

15

10

0

 1

 5

 50

 10

20ms

90

110

130

50

0

70

150

1

2

3

4

5

25

50

100

125

0

0

75

150

0.6

1.2

1.8

2.4

3.0

10

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.001

50

t / T   1/2

=

t / T   1/6

=

D.C.

t / T   1/3, 

Sinewave

=

0.4

0.8 1.2

1.6

 0

2.0

2.4

2.8

T  

a

    150

°

C

=

    60

°

C

    25

°

C

    100

°

C

1

3

4

 

0

5

T  

a

    150

°

C

=

    60

°

C

    25

°

C

    100

°

C

FML-G12S

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

100

0

110

120

150

1

2

3

4

5

140

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

20

10

60

40

50

30

70

0

 1

 5

 50

 10

20ms

FML-G13S, G14S

10

30

20

50

40

0

 1

 5

 50

 10

20ms

20
10

1

0.1

0.01

0.001

0.5

1.0

 0

1.5

2.0

50

10

1

0.1

0.01

0.001

FML-G16S

70

0

90

110

150

1

2

3

4

5

130

t / T   1/6

=

Sinewave

t / T   1/2

=

D.C.

90

0

100

150

1

2

3

4

5

140

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

110

120

0.4

0.8 1.2

1.6

 0

2.0

2.4

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

t / T   1/ 3

=

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Ta— I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

72

20

60

40

100

80

0

 1

 5

 50

 10

20ms

FMN-G12S

50

10

1

0.1

0.01

0.001

0.2

0.4 0.6

0.8

 0

1.0

1.2

1.4

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

0

150

1

2

3

4

5

100

110

120

130

140

t / T   1/6

=

Sinewave

t / T   1/2

=

D.C.

t / T   1/3

=

Tj=

125

°

C

V

R

=

200V

T

t

FMP-G12S

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

1.0

1.6

1.4

1.2

 0

0.6

0.8

0.4

100

0

110

120

130

150

1

2

3

4

5

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

140

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FMX-G12S

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

120

140

t / T   1/3

=

t / T   1/2

=

0

110

150

1

2

3

4

5

130

t / T   1/6

=

Sinewave

D.C.

0.2

0.4 0.6

0.8

 0

1.0

1.2

1.4

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

FML-G22S

30

90

60

150

120

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

80

0

90

110

150

2

4

6

8

10

130

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

100

120

140

0.8

1.0

1.2

 0

0.4

0.6

0.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FMX-G22S

30

90

60

150

120

0

 1

 5

 50

 10

20ms

0.2

0.4 0.6

0.8

 0

1.0

1.2

1.4

50

10

1

0.1

0.01

0.001

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

50

0

150

2

4

6

8

10

70

90

110

130

t / T   1/6

=

Sinewave

t / T   1/2

=

D.C.

t / T   1/3

=

Tj=

150

°

C

V

R

=

200V

T

t

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

73

FMG-12S/R, 13S/R

10

15

5

30

20

25

35

0

 1

 5

 50

 10

20ms

50

0

70

90

110

150

1

2

3

4

5

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

10

1

0.1

0.01

0.002

50

1.0

2.0

0

3.0

4.0

Tj  

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FMC-26U, 26UA

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

150

2

3

0

50

100

t / T=1/6

t / T=1/2

D.C.

1

Tj=

150

°

C

T

t

t / T=1/3, 

Sinewave

0

3

10

15

0

1

2

t / T=1/6

t / T=1/2

D.C.

5

Tj=

150

°

C

T

t

t / T=1/3, 

Sinewave

FMC-28U, 28UA

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

150

2

3

50

70

90

110

130

t / T=1/6

t / T=1/2

D.C.

1

Tj =

150

°

C

T

t

t / T=1/3, 

Sinewave

0

3

10

15

20

25

0

1

2

t / T=1/6

t / T=1/2

D.C.

5

Tj=

150

°

C

T

t

t / T=1/3, 

Sinewave

FMG-G36S

10

20

60

50

40

30

80

70

0

 1

 5

 50

 10

20ms

FMG-G3CS

10

50

60

40

30

20

0

 1

 5

 50

 10

20ms

90

110

130

50

0

70

150

2

4

6

8

10

25

50

100

125

0

0

75

150

1

2

3

4

5

T  

a

    150

°

C

=

    25

°

C

    100

°

C

0.4

0.8 1.2

1.6

10

1

0.1

0.01

0.001

20

 0

2.0

2.4

t / T   1/2

=

t / T   1/6

=

D.C.

t / T   1/3, 

Sinewave

=

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current   I

F (AV) 

(A)

Ambient Temperature   Ta (

°

C)

Ta— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

74

FMG-14S/R

10

15

5

30

20

25

35

0

 1

 5

 50

 10

20ms

50

0

70

90

110

150

1

2

3

4

5

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

10

1

0.1

0.01

0.002

50

1.0

2.0

0

3.0

4.0

Tj  

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FMG-22S/R, 23S/R

FMG-24S/R

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

20

10

1

0.1

0.01

0.001

0.6

1.0 1.4

1.8

30

10

1

0.1

0.01

0.001

 0.2

2.2

T  

a

    150

°

C

=

    60

°

C

    25

°

C

    100

°

C

0.5

1.0 1.5

2.0

 0

2.5

50

0

70

90

110

150

2

4

6

8

10

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

50

0

70

90

110

150

2

4

6

8

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

T  

a

    150

°

C

=

    60

°

C

    27

°

C

    100

°

C

FMG-26S/R

10

40

30

20

50

0

 1

 5

 50

 10

20ms

10

1

0.1

0.01

0.001

0.5

1.0 1.5

2.0

 0

2.5

50

0

70

90

110

150

1

2

3

4

6

5

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

FML-12S

5

25

30

20

15

10

35

0

 1

 5

 50

 10

20ms

20
10

1

0.1

0.01

0.001

0.5

1.0 1.5

 0

T  

a

    150

°

C

=

      24

°

C

100

0

110

120

130

150

1.0

2.0

3.0

4.0

5.0

140

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

75

FML-13S

FML-14S

5

30

35

25

15

20

10

40

0

 1

 5

 50

 10

20ms

70

0

90

110

150

1.0

2.0

3.0

5.0

4.0

130

30

10

1

0.1

0.01

0.001

5

30

35

25

15

20

10

40

0

 1

 5

 50

 10

20ms

0.6

1.0 1.4

1.8

 0.2

2.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

30

10

1

0.1

0.01

0.001

0.6

1.0 1.4

1.8

 0.2

2.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

D.C.

t / T   1/2

=

t / T   1/ 3, 

Sinewave

=

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

t / T   1/6

=

0

100

130

150

1.0

2.0

3.0

4.0

5.0

140

110

120

FML-23S

FML-24S

10

50

60

40

30

20

70

0

 1

 5

 50

 10

20ms

10

50

60

40

30

20

70

0

 1

 5

 50

 10

20ms

30

10

1

0.1

0.01

0.001

70

0

90

110

150

2

4

6

10

8

130

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

70

0

90

110

150

2

4

6

8

10

130

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

30

10

1

0.1

0.01

0.001

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FML-22S

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

20
10

1

0.1

0.01

0.001

60

0

80

100

120

160

2

4

6

8

10

140

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

76

FMG-32S/R, 33S/R

30

120

90

60

150

0

 1

 5

 50

 10

20ms

FMG-34S/R

20

80

60

40

100

0

 1

 5

 50

 10

20ms

0.4

0.8 1.2

1.6

10

1

0.1

0.01

0.001

50

 0

2.0

2.4

0.4

0.8 1.2

1.6

10

1

0.1

0.01

0.001

30

 0

2.0

2.4

T  

a

    150

°

C

=

    60

°

C

    25

°

C

    100

°

C

50

0

70

90

110

150

4

8

12

16

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

50

0

70

90

110

150

4

8

12

16

20

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

T  

a

    130

°

C

=

    60

°

C

    28

°

C

    100

°

C

FMX-12S

5

10

25

20

15

35

30

0

 1

 5

 50

 10

20ms

FMX-22S

FMX-22SL

10

50

60

40

30

20

65

0

 1

 5

 50

 10

20ms

20

80

60

40

100

0

 1

 5

 50

 10

20ms

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

30

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

80

100

120

140

t / T   1/3

=

t / T   1/2

=

70

0

90

110

150

1

2

3

4

5

130

t / T   1/6

=

Sinewave

D.C.

80

100

120

140

t / T   1/3

=

t / T   1/2

=

70

0

90

110

150

2

4

6

8

10

130

t / T   1/6

=

Sinewave

D.C.

40

80

120

140

t / T   1/3

=

t / T   1/2

=

20

0

60

100

160

5

10

15

20

t / T   1/6

=

Sinewave

D.C.

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

77

10

20

60

50

40

30

80

70

0

 1

 5

 50

 10

20ms

T  

a

    150

°

C

=

    25

°

C

    100

°

C

0.4

0.8 1.2

1.6

10

1

0.1

0.01

0.001

20

 0

2.0

2.4

FMG-36S/R

50

0

70

90

110

150

3

6

9

12

15

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

130

FML-32S

FML-33S, 34S

20

80

60

40

100

0

 1

 5

 50

 10

20ms

30

120

90

60

150

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

0.4

0.6 0.8

1.0

 0

 0.2

1.2

1.4

80

0

100

120

150

4

8

12

16

20

130

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

90

110

140

60

0

80

100

120

160

5

10

15

20

25

140

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

0.4

0.8 1.2

1.6

 0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    24

°

C

FML-36S

20

80

60

40

100

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

0

0

40

80

160

4

8

12

16

20

120

t / T   1/6

=

t / T   1/ 3, 

Sinewave

=

t / T   1/2

=

D.C.

140

20

60

100

0.4

0.8 1.2

1.6

 0

2.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

FMX-32S

30

120

90

60

150

0

 1

 5

 50

 10

20ms

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    150

°

C

=

    100

°

C

    60

°

C

    25

°

C

1

0.1

0.01

0.001

10

50

70

100

120

140

t / T   1/3

=

t / T   1/2

=

60

0

90

110

150

4

8

12

16

20

130

t / T   1/6

=

Sinewave

D.C.

80

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

0

25

50

75

100

125

150

0

1.0

2.0

3.0

4.0

40

0

25

50

75

100

125

150

0

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-402L

0

 1

 5

 50

 10

40

20ms

80

20

60

RBV-602L

0

 1

 5

 50

 10

40

20ms

100

80

20

60

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

    150

°

C

T  

a

=

    60

°

C

    100

°

C

    25

°

C

20
10

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.001

78

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ambient Temperature   Ta (

°

C)

I

FMS

   Rating

V

F

— I

F

  Characteristics

 (Typical)

Ta— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Allegro_Silicon_Diodes-html.html
background image

79

0

5

10

15

20

25

30

0.0005

0.001

0.01

0.1

1

10

50

0.0

0.001

0.01

0.1

1

10

0.2

0.4

0.6

0.8

1.0

150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

0.0

0.2

0.4

0.6

0.8

1.0

50

100

150

T

t

Tj=150

°

C

t/T=1/6

V

R

=30V

t/T=1/3

D.C.

Sinewave

t/T=1/2

SSB-14

MI1A3

1

3

2

4

0

 1

 5

 50

 10

20ms

5

10

25

20

15

30

0

 

1

 

5

 

50

 10

20ms

0

25

50

75

100

125

0

0.1

0.2

0.3

0.4

0.5

SFPB-54

0

25

50

40

75

100

125

0

0.2

0.4

0.6

0.8

1.0

t 1.6   P.C.B

Solder Land

=

3.0 35

µ

mCu

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

5

1

0.1

0.01

0.001

20
10

1

0.1

0.01

0.001

0

20

40

50

10

30

5

1

0.1

0.01

0.0005

0.001

30

10

1

0.1

0.01

0.001

1–t / T=1/2

1–t / T=2/3

1–t / T=5/6

D.C.

Sinewave

Tj=

125

°

C

V

R

=

40V

T

t

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

0.2

0.4 0.6

0.8

 0

1.0

1.2

10

30

60

20

40

50

T  

a

    125

°

C

=

   100

°

C

   60

°

C

   25

°

C

SFPB-56

2

6

4

10

8

0

 

1

 

5

 

50

 10

20ms

0

25

50

40

75

100

125

0

0.2

0.4

0.6

0.8

1.0

t 1.6   P.C.B

Solder Land

=

3.0 35

µ

mCu

20
10

1

0.1

0.01

0.001

20
10

1

0.1

0.01

0.0005

0.001

0.2

0.4 0.6

0.8

 0

1.0

1.2

10

50

30

70

90

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

0

 

1

 

5

 

50

 10

20ms

2

8

6

4

10

SFPB-59

20
10

1

0.1

0.01

0.001

4

1

0.1

0.01

0.0005

0.001

0.2

0.4 0.6

0.8

 0

1.0

1.2

Ta=125

°

C

    100

°

C

    60

°

C

    25

°

C

10

50

30

70

90

110

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

0

25

50

40

75

100

125

0

0.2

0.4

0.6

0.8

1.0

t 1.6   P.C.B

Solder Land

=

3.0 35

µ

mCu

Ta=125

°

C

    100

°

C

    60

°

C

    25

°

C

Ta=125

°

C

    100

°

C

    60

°

C

    25

°

C

Ta=125

°

C

    100

°

C

    60

°

C

    26

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

80

0

 

1

 

5

 

50

 10

20ms

10

20

50

40

30

60

SFPB-64

0

25

50

40

75

100

125

0

0.3

0.6

0.9

1.2

1.5

t 1.6   P.C.B

Solder Land

=

3.0 35

µ

mCu

20
10

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.001

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    125

°

C

=

    100

°

C

    60

°

C

    25

°

C

10

30

60

20

40

50

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

10

20

50

40

30

60

0

 

1

 

5

 

50

 10

20ms

SFPB-74

0

25

50

75

100

125

0

0.4

0.8

1.2

1.6

2.0

t 1.6   P.C.B

Solder Land

=

5.0 35

µ

mCu

20
10

1

0.1

0.01

0.001

200
100

10

1

0.1

0.01

0.003

0.2

0.4 0.6

0.8

 0

1.0

1.2

T  

a

    125

°

C

=

    100

°

C

    60

°

C

    25

°

C

10

30

60

20

40

50

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

SFPB-66

t

T

V

R

=60V

Tj=125

°

C

0

50

75

100

125

0

0.5

1.0

1.5

2.0

50

10

1

0.1

0.01

0.001

20
10

1

0.001

0.01

0.1

0.2 1.0

1.4

1.6

1.2

 0

0.4  0.6  0.8 

10 50

60

70

80

 0

20 

30  40 

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

T  

a

    125

°

C

=

100

°

C

  60

°

C

  25

°

C

125

°

C

100

°

C

  60

°

C

  25

°

C

5

10

25

20

15

0

 

1

 

5

 

50

 10

20ms

10

30

20

40

0

 

1

 

5

 

50

 10

20ms

SFPB-76

0

25

50

45

75

100

150

125

0

0.4

0.8

1.2

1.6

2.0

t 1.6   P.C.B

Solder Land

=

10 35

µ

mCu

30

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

0.2

0.4 0.6

0.8

 0

1.0

T  

a

    125

°

C

=

    100

°

C

    60

°

C

    25

°

C

0

40

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

SFPB-69

50

75

100

125

0

0.3

0.6

0.9

1.5

1.2

50

10

1

0.1

0.01

0.001

10

1

0.001

0.01

0.1

0.2 1.0

1.4

1.6

1.2

 0

0.4  0.6  0.8 

10 50 60 70 80 90 100

 0

20  30  40 

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

T  

a

    125

°

C

=

100

°

C

  60

°

C

  25

°

C

125

°

C

100

°

C

  60

°

C

  25

°

C

t

T

V

R

=90V

Tj=125

°

C

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

81

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

SPB-G34S

100

95

105

110

115

120

125

0

1.0

0.5

2.0

1.5

2.5

3.0

V

R

=40V

D.C.

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

Sinewave

30

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    28

°

C

100

10

1

0.1

0.01

0.005

0

10

30

50

60

20

40

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   28

°

C

SPB-64S

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

30

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

100

10

1

0.1

0.01

0.001

0

10

30

50

60

20

40

80

70

90

100

110

120

130

0

1.0

2.0

3.0

4.0

5.0

6.0

V

R

=40V

D.C.

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   27

°

C

10

20

50

40

30

60

0

 

1

 

5

 

50

 10

20ms

SPB-G54S

80

70

90

100

110

120

130

0

1.0

2.0

3.0

4.0

5.0

V

R

=40V

30

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

D.C.

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    28

°

C

500
100

10

1

0.1

0.01

0.005

0

10

30

50

60

20

40

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   28

°

C

SPB-G56S

10

20

30

50

40

60

0

 

1

 

5

 

50

 10

20ms

0

0.2

0.4

0.6

1.0

0.8

20
10

1

0.1

0.01

0.001

80

70

90

100

110

120

130

0

2.0

1.0

3.0

4.0

6.0

5.0

V

R

=60V

D.C.

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    23

°

C

0

20

30

50

60

70

10

40

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   23

°

C

50

10

1

0.1

0.01

0.001

SPB-66S

0

1

2

3

4

6

5

100

110

120

130

140

150

0

1

2

3

4

6

5

0

1

2

3

4

6

5

0

10

20

30

40

50

60

0

1

2

3

4

8

5

6

7

0

50

100

150

0

1

2

3

4

6

5

D.C.

Sinewave

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Tj=

150

°

C

T

t

t / T=1/2

t / T

=1/2

t / T=1/3, Sinewave

t / T

=1/3

t / T=1/6

t / T

=1/6

D.C.

Tj=150

°

C

T

t

V

R

=0V

V

R

=60V

Tj=

150

°

C

T

t

Sinewave

Tj

=150

°

C

T

t

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

82

MPE-24H

100

110

120

130

140

150

0

5

10

15

t / T   5/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

t

T

V

R

=40V

Tj=150

°

C

20

40

100

80

60

0

 

1

 

5

 

50

 10

20ms

Ta=155

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

0.5

1.0

1.5

0.001

1

0.1

0.01

10

100

0

5

10

15

20

0

10

5

15

20

25

=

t / T   1/6

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

Tj =150ºC

0

50

100

150

0

5

10

15

V

R

=90V

20

T

t

Tj =150ºC

t / T=1/6

t / T=1/ 3

D.C.

t / T=1/2

Sinewave

Ta =150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

40

60

20

80

100

0.0005

0.001

1

0.1

0.01

10

50

AK 03, 04

MPE-29G

5

10

25

20

15

0

 

1

 

5

 

50

 10

20ms

0

25

50

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

20
10

1

0.1

0.01

0.001

10

50

1

0.001

0.1

0.01

0.2 1.0

1.2

 

0

0.4 0.6 0.8 

10 50

60

 0

20 

30 

40 

50

P.C.B. t 1.6

3.0 t 50

µ

Cu

T  

a

    125

°

C

=

100

°

C

  60

°

C

  27

°

C

125

°

C

100

°

C

  60

°

C

  27

°

C

AK 06

2

4

10

8

6

0

 

1

 

5

 

50

 10

20ms

0

25 40 50

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

10

1

0.1

0.01

0.001

0

30

40

20

10

30

60

70

80

T  

a

    125

°

C

=

    65

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

AK 09

2

4

10

8

6

0

 

1

 

5

 

50

 10

20ms

0

25 35 50

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

3

1

0.1

0.01

0.001

0.0001

0

40

100

120

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

83

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

EK 03, 04

0

25

50

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

10

1

0.1

0.01

10

100

1

0.1

0.2 1.0

1.2

 

0

0.4 0.6 0.8 

10 50

60

 0

20 

30 

40 

T  

a

    125

°

C

=

  25

°

C

T  

a

    125

°

C

=

T  

a

    25

°

C

=

10

1

0.1

0.01

100

10

1

0.1

EK 13, 14

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

0

25

50

75

100

150

125

0

0.3

0.6

0.9

1.2

1.5

0.2 1.0

1.2

 

0

0.4 0.6 0.8 

T  

a

    125

°

C

=

  25

°

C

10 50

60

 0

20 

30 

40 

T  

a

    125

°

C

=

T  

a

    25

°

C

=

2

4

10

8

6

0

 

1

 

5

 

50

 10

20ms

EK 06

0

25

50

40

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

10

1

0.1

0.01

0.001

0

30

40

20

10

30

60

70

80

T  

a

    125

°

C

=

    65

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

50

10

1

0.1

0.01

0.001

EK 16

5

10

20

15

25

0

 

1

 

5

 

50

 10

20ms

0

25

50

40

75

100

150

125

0

0.3

0.6

0.9

1.2

1.5

0

40

100

20

60

80

30

10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   27

°

C

2

4

10

8

6

0

 

1

 

5

 

50

 10

20ms

EK 09

0

25

50

75

100

150

125

0

0.2

0.4

0.6

0.8

1.0

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

3

1

0.1

0.01

0.001

0.0001

0

40

100

120

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

84

0

0.2

0.4

0.6

0.8

1.0

1.2

20
10

1

0.1

0.01

0.001

EK 19

0

25

50

30

75

100

150

125

0

0.3

0.6

0.9

1.2

1.5

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

0

40

100

120

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

10

1

0.1

0.01

0.001

RK 13, 14

10

1

0.1

0.01

100

10

1

0.01

0.1

20

10

40

50

30

60

0

 

1

 

5

 

50

 10

20ms

0

25

50

40

75

100

150

125

0

0.4

0.8

1.2

1.6

1.7

2.0

0.2 1.0

1.2

 0

0.4 

0.6 

0.8 

10 50

60

 0

20 

30 

40 

T  

a

    125

°

C

=

T  

a

    25

°

C

=

T  

a

    125

°

C

=

  25

°

C

RK 33, 34

10

20

40

30

50

0

 

1

 

5

 

50

 10

20ms

0

25

50

75

100

150

125

0

0.5

1.0

1.5

2.0

2.5

50

10

1

0.1

0.01

0.001

100

10

1

0.001

0.01

0.1

0.2 1.0

1.2

 

0

0.4 0.6 0.8 

10 50

60

 0

20 

30 

40 

L =15 mm

L =15 mm

P.C.B

10mm

T  

a

    125

°

C

=

100

°

C

  60

°

C

  27

°

C

125

°

C

100

°

C

  60

°

C

  27

°

C

RK 16

5

10

20

15

25

0

 

1

 

5

 

50

 10

20ms

0

25

50

40

75

100

150

125

0

0.3

0.6

0.9

1.2

1.5

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

50

10

1

0.1

0.01

0.001

0

40

100

20

60

80

30

10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   27

°

C

RK 19

0

25

50

75

100

150

125

0

0.3

0.6

0.9

1.2

1.5

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

0

0.2

0.4

0.6

0.8

1.0

1.2

20
10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

0

40

100

120

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

10

1

0.1

0.01

0.001

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

180•100•1.6 t

Solder

Copper Foil

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

85

20

60

40

80

0

 

1

 

5

 

50

 10

20ms

RK 43, 44

0

25

50

75

100

125

0

0.6

1.2

1.8

2.4

3.0

V

R

=40V

50

10

1

0.1

0.01

0.001

50

10

1

0.001

0.01

0.1

0.2 1.0

1.4

1.2

 0

0.4  0.6 

0.8 

10 50

60

 0

20 

30 

40 

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

T

t

T  

a

    125

°

C

=

100

°

C

  60

°

C

  25

°

C

125

°

C

100

°

C

  60

°

C

  25

°

C

RK 36

0

25 30

50

75

100

150

125

0

0.4

0.8

1.6

1.2

2.0

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

0

0.5

1.0

1.5

50

10

1

0.1

0.01

0.001

0

40

20

60

80

50

10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    R.T

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   R. T

L =15 mm

L =15 mm

P.C.B.

180•180•1.6 t

Solder

10•10mm
35

µ

mt Cu

10

20

70

60

30

40

50

0

 

1

 

5

 

50

 10

20ms

RK 46

80

90

100

110

120

130

0

1

2

3

4

5

V

R

=60V

0

0.2

0.4

0.6

0.8

1.2

1.0

50

10

1

0.1

0.01

0.001

0

40

20

60

80

50

10

1

0.1

0.01

0.001

D.C.

t / T   1/2

=

t / T   1/6

=

t / T   1/ 3

=

Sinewave

T  

a

    125

°

C

=

    100

°

C

    60

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

RK 39

0

25

50

35

75

100

150

125

0

0.4

0.8

1.2

1.6

2.0

10

20

40

30

50

0

 

1

 

5

 

50

 10

20ms

0

0.2

0.4

0.6

0.8

1.2

1.0

1.4

50

10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

0

40

100

120

20

60

80

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

50

10

1

0.1

0.01

0.001

10

20

60

30

40

50

0

 

1

 

5

 

50

 10

20ms

RK 49

60

80

100

120

140

160

0

1

2

3

4

5

V

R

=90V

0

0.2

0.4

0.6

0.8

1.2

1.0

50

10

1

0.1

0.01

0.001

0

40

100

120

20

60

80

50

10

1

0.1

0.01

0.001

T  

a

    125

°

C

=

    100

°

C

    60

°

C

    28

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   28

°

C

D.C.

t / T   1/2

=

t / T   1/6

=

t / T   1/ 3

=

Sinewave

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

86

FMB-G14

10

20

30

60

50

40

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

50

10

1

0.1

0.01

0.001

0

20

40

50

60

10

30

80

0

130

1

2

3

110

120

100

90

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

FMB-G14L

10

1

0.1

0.01

0.001

0

0.1

0.2

0.3

0.4

0.5

0.7

0.6

200
100

10

1

0.1

0.01

0

20

10

40

50

60

30

10

20

30

60

50

40

0

 

1

 

5

 

50

 10

20ms

80

0

90

100

130

1

2

3

4

5

120

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

110

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   27

°

C

30

60

150

120

90

0

 

1

 

5

 

50

 10

20ms

FMB-G24H

20
10

1

0.1

0.01

0.001

0

0.1

0.2

0.3

0.4

0.5

0.7

0.6

0

20

10

40

50

60

30

200
100

10

1

0.1

0.01

60

0

70

100

130

2

4

6

8

10

110

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

50

80

90

120

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   27

°

C

FMB-G16L

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

60

0

80

140

1

2

3

5

4

6

120

100

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

50

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

0

20

10

40

50

80

60

70

30

50

10

1

0.1

0.005

0.01

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

V

R

=

60V

FMB-G19L

50

10

1

0.1

0.01

0

0.5

1.0

1.5

50

10

1

0.1

0.01

0.001

0

20

40

100

80

60

80

0

90

130

1

2

3

4

120

100

110

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

10

20

30

40

60

50

0

 

1

 

5

 

50

 10

20ms

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

87

FMB-24

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

20

10

1

0.1

0.01

0

0.5

1.0

1.5

20

10

1

0.1

0.01

0.001

0

20

40

50

60

10

30

0

80

110

130

1

2

3

4

5

120

90

100

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

T  

a

    125

°

C

=

    100

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

    26

°

C

    60

°

C

FMB-24L

10

20

60

30

40

50

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.01

0

0.5

1.0

1.5

50

10

1

0.1

0.01

0.004

0

20

40

50

60

10

30

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

80

110

130

2

4

6

8

10

120

90

100

FMB-24H

20

40

100

80

60

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.01

0

0.5

1.0

1.5

100

10

1

0.1

0.01

0.001

0

20

40

50

60

10

30

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

40

0

60

80

140

3

6

9

12

15

120

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

100

Sinewave

FMW-24H

0

5

10

15

0

5

10

15

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

50

70

90

110

130

150

0

5

10

15

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

V

R

=0V

25

50

75

100

125

150

0

5

10

15

V

R

=40V

Tj=

150

°

C

T

t

0

10

20

30

40

0

5

10

20

15

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Sinewave

Tj

=150

°

C

T

t

D.C.

Sinewave

t / T

=1/2

t / T

=1/3

t / T

=1/6

Tj=

150

°

C

T

t

FMW-24L

50

70

90

110

130

150

0

4

2

6

10

8

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

V

R

=0V

50

75

100

125

150

0

4

2

8

6

10

V

R

=40V

Tj=

150

°

C

T

t

D.C.

Sinewave

t / T

=1/2

t / T

=1/3

t / T

=1/6

0

10

20

30

40

0

5

10

15

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Sinewave

Tj

=150

°

C

T

t

0

4

2

8

6

10

0

4

2

8

6

10

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=

150

°

C

T

t

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

88

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

FMB-26

FMB-26L

50

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

0

20

10

40

50

80

60

70

30

50

10

1

0.1

0.005

0.01

10

20

30

40

0

 

1

 

5

 

50

 10

20ms

0

80

90

100

130

1

2

3

4

5

120

0

70

150

130

2

4

6

8

10

110

110

50

90

50

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

50

10

1

0.1

0.01

0.001

0

20

40

50

80

70

60

10

30

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

V

R

=

60V

V

R

=

60V

FMB-24M

30

10

0.1

1

0.01

0.001

0

0

10

20

30

40

50

60

0.2

0.4

0.6

0.8

1.0

1.2

50

10

1

0.1

0.01

0.001

10

20

60

30

40

50

0

 

1

 

5

 

50

 10

20ms

0

80

110

130

1.2

2.4

3.6

4.8

6.0

120

90

100

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    27

°

C

   27

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

FMB-2304

0

50

100

150

0

20

15

10

5

25

30

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

V

R

=0V

Tj=

150

°

C

T

t

0

50

100

150

0

10

5

25

20

15

30

V

R

=40V

D.C.

Sinewave

t / T=1/2

t / T=1/3

t / T=1/6

0

10

20

30

40

0

15

10

5

20

25

30

35

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Sinewave

Tj=

150

°

C

T

t

0

10

5

20

25

15

30

0

20

5

10

15

30

25

35

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=

150

°

C

T

t

FMB-2206

0

50

100

150

0

5

10

20

15

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

V

R

=0V

Tj

=

150

°

C

T

t

0

50

100

150

0

10

5

20

15

V

R

=40V

D.C.

Sinewave

t / T=1/2

t / T=1/3

t / T=1/6

0

10

20

30

60

40

50

0

15

10

5

20

25

30

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Sinewave

Tj

=150

°

C

T

t

0

10

5

20

15

0

20

5

10

15

25

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=

150

°

C

T

t

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

(W)

I

F(AV)

—P

F

  Characteristics

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

(W)

I

F(AV)

—P

F

  Characteristics

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

89

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

FMB-29

FMB-2306

FMB-29L

50

10

1

0.1

0.01

0

20

40

100

80

60

50

10

1

0.1

0.001

0.01

10

20

30

40

60

50

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.01

0

0.5

1.0

1.5

0

0.5

1.0

1.5

10

1

0.1

0.01

0.001

0

20

40

100

80

60

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

V

R

=

90V

0

60

70

120

130

2

4

6

8

90

80

100

110

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

80

110

130

1

2

3

4

120

90

100

Ta=150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

0.4

0.6

0.2

0.8

1.2

1.0

1.4

0.001

1

0.1

0.01

10

100

0

5

10

15

20

25

30

0

10

20

30

40

=

t / T   1/6

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

Tj =150ºC

0

50

100

150

0

10

20

V

R

=60V

30

T

t

Tj =150ºC

=

t / T   1/3

Sinewave

t / T   1/2

=

D.C.

Ta =150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

20

30

10

50

40

60

0.001

1

0.1

0.01

10

100

FME-24H

FME-24L    

100

110

120

130

140

150

0

6

4

2

8

10

t / T   5/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

t

T

V

R

=40V

Tj=150

°

C

 50

20

40

80

60

0

 1

 5

 10

20ms

20

40

100

80

60

0

 1

 5

 50

 10

20ms

100

110

120

130

140

150

0

5

10

15

t / T   5/6

=

t / T   1/2

=

D.C.

t / T   1/ 3

=

Sinewave

t

T

V

R

=40V

Tj

=150

°

C

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Average Forward Current    I

F

(AV) 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

T  — I

F (AV)

 Characteristics   

Lead Temperature   T   (

°

C)

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

90

30

60

150

120

90

0

 

1

 

5

 

50

 10

20ms

FMB-34

FMJ-23L

FME-230A

FME-220A

60

120

300

240

180

0

 

1

 

5

 

50

 10

20ms

FMB-34M

0

80

110

130

3

6

9

12

15

120

90

100

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

40

100

140

6

12

18

24

30

120

60

80

50

10

1

0.1

0.001

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

100

10

1

0.1

0.01

0

20

40

80

60

T  

a

    125

°

C

=

    100

°

C

   28

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

    28

°

C

    60

°

C

20

10

1

0.1

0.001

0.01

0

0.3

0.2

0.1

0.5

0.4

0.6

500

100

10

1

0.1

0.01

0

20

40

50

70

60

10

30

T  

a

    125

°

C

=

    100

°

C

   22

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

    26

°

C

    60

°

C

0

2

4

6

8

10

0

2

4

6

8

10

t / T = 1/ 3, Sinewave

t / T =1/2

D.C.

t / T =1/6

T

t

Tj =150ºC

Sinewave

D.C.

t / T =1/3

t / T =1/6

50

70

90

110

130

150

0

2

4

6

8

V

R

=30V

10

T

t

Tj =150ºC

t / T =1/2

0

0.1

0.2

0.4

0.3

0.6

0.5

0.001

1

0.1

0.01

10

100

Ta=150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

Ta=150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

0.4

0.8

1.2

1.6

0.001

1

0.1

0.01

10

100

0

5

10

15

30

20

25

0

5

10

15

35

25

30

20

t / T =1/6

t / T =1/ 3, Sinewave

t / T =1/2

D.C.

T

t

Tj =150ºC

0

50

100

150

0

5

10

20

15

25

V

R

=100V

30

1–t / T=1/3

1–t / T=1/6

Sinewave

1– t / T=1/2

D.C.

T

t

Tj =150ºC

Ta=150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

0.4

0.8

1.2

1.6

0.001

1

0.1

0.01

10

100

0

5

10

15

20

0

5

10

15

25

20

t / T =1/6

t / T =1/ 3, Sinewave

t / T =1/2

D.C.

T

t

Tj =150ºC

0

50

100

150

0

4

8

12

16

V

R

=100V

20

T

t

Tj =150ºC

1–t / T=1/3

1–t / T=1/6

Sinewave

1– t / T=1/2

D.C.

Ta =150

°

C

125

°

C

100

°

C

60

°

C

25

°

C

0

20

80

60

40

100

0.0001

0.001

1

0.1

0.01

10

100

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

(W)

I

F(AV)

—P

F

  Characteristics

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

(W)

I

F(AV)

—P

F

  Characteristics

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Average Forward Current   I

F(AV) 

(A)

Forward Power Loss   P

F  

(W)

I

F(AV)

—P

F

  Characteristics

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

91

15

30

75

60

45

0

 

1

 

5

 

50

 10

20ms

FMB-34S

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

80

110

130

3

6

9

12

15

120

90

100

50

10

1

0.1

0.01

0

0.5

1.0

1.5

50

10

1

0.1

0.01

0.005

0

20

40

50

60

10

30

T  

a

    125

°

C

=

    100

°

C

   25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

    26

°

C

    60

°

C

FMB-36

20

40

100

80

60

0

 

1

 

5

 

50

 10

20ms

30

60

150

120

90

0

 

1

 

5

 

50

 10

20ms

FMB-36M

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

1.0

0.8

100

10

1

0.1

0.01

0.005

0

20

40

50

70

60

10

30

500

100

10

1

0.1

0.01

0

20

10

40

50

70

60

30

30

0

50

70

90

130

6

12

18

24

30

110

80

0

130

3

6

9

12

15

V

R

=

60V

V

R

=

60V

120

110

100

90

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

t / T   1/6

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

Sinewave

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   26

°

C

FMB-39

10

20

30

60

50

40

0

 

1

 

5

 

50

 10

20ms

30

60

150

120

90

0

 

1

 

5

 

50

 10

20ms

FMB-39M

50

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

50

10

1

0.1

0.01

0.005

0

40

80

100

120

60

20

V

R

=

90V

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    26

°

C

   26

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

60

120

130

5

10

15

20

80

70

90

100

110

60

120

130

80

70

90

100

110

V     90V

R

=

t / T   1/ 3

=

t / T   1/2

=

D.C.

t / T   1/6

=

Sinewave

0

3

6

9

12

15

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

92

RBV-406B

0

25

50

40

75

100

125

0

0.8

1.6

2.4

3.2

4.0

0

0.2

0.4

0.6

0.8

1.0

1.2

50

10

1

0.1

0.001

0.01

0

10

30

70

60

20

50

40

30

10

1

0.1

0.01

0.001

10

20

40

30

0

 

1

 

5

 

50

 10

20ms

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

   100

°

C

T  

a

    125

°

C

=

   60

°

C

   25

°

C

I

FSM

 (A)

Ambient Temperature   Ta (

°

C)

Average Forward Current    I

F

(AV) 

(A)

Ta— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Characteristic Curves

Schottky Barrier Diodes

Allegro_Silicon_Diodes-html.html
background image

93

RH 10F, 2D, 2F

0

25

50

40

60 75

100

125

150

0

0.2

0.4

0.6

0.8

1.0

RH 3F, 3G

0

25

50

75

100

125

150

0

2.5

2.0

1.5

1.0

0.5

10

40

30

20

50

60

0

 1

 5

 50

 10

20ms

 1

 5

 50

 10

20ms

50

40

30

20

10

0

10mm

P. C. B.  t 1.6
Solder Land 10 mm

RH 10F

RH 2D, 2F

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

0.4

0.6 0.8

1.0

10

10

20

0

0.1

0.01

0.001

0

0.1

0.01

0.001

0.2

1.2

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

RH 4F

0

25

50 60 75

100

125

150

0

3.0

2.5

2.0

1.5

1.0

0.5

 1

 5

 50

 10

20ms

50

40

30

20

10

0

With Heatsink

W

ithout H

eatsink

20 • 20 • 1t Cu

5mm

5mm

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

10

20

0

0.1

0.01

0.001

RP 3F

10

40

30

20

50

0

 1

 5

 50

 10

20ms

20
10

1

0.1

0.01

0.001

0

0.5

1.0

1.5

2.0

0

25

50

75

100

125

150

0

1.0

0.5

2.5

2.0

1.5

10mm

P. C. B.  t 1.6
Solder Land    10

25

°

C

100

°

C

Ta=150

°

C

60

°

C

RS 3FS

10

40

30

20

50

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

0

25

50

75

100

125

150

0

0.5

1.0

1.5

2.0

2.5

10mm

P. C. B.  t 1.6
Solder Land    5.0

0.3

0.5 0.7

0.9

 0.1

1.1

1.3

1.5

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

94

RU 4D

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

0.5

1.0

1.5

2.5

2.0

100

°

C

Ta =140

°

C

28

°

C

30

10

1

0.1

0.001

0.01

RU 4DS

10

40

30

20

50

0

 1

 5

 50

 10

20ms

20
10

1

0.1

0.01

0.001

0

0.5

1.0

1.5

2.0

26

°

C

100

°

C

Ta =150

°

C

60

°

C

0

25

50

40

60 75

100

125

150

0

0.5

1.0

2.0

1.5

20 • 20 • 1t Cu

5mm

5mm

0

25

50 60 75

100

125

150

0

0.5

1.5

1.0

3.0

2.5

2.0

20 • 20 • 1t Cu

5mm

5mm

RS 4FS

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

25

50 60 75

100

125

150

0

0.5

1.0

2.0

1.5

2.5

3.0

20 • 20 • 1t Cu

5mm

5mm

10

1

0.1

0.01

0.002

20

0.5

1.0

0

1.5

Tj  

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

t / T=1/2

t / T=1/6

t / T=1/3, 
Half-cycle sinewave

DC

RG 2A2

RC 3B2

4

16

12

8

20

0

 1

 5

 50

 10

20ms

1

4

3

2

5

0

 1

 5

 50

 10

20ms

90

100

130

120

110

140

150

1.0

0.8

0.6

0.4

0.2

0

10

1

0.1

0.01

0.001

0

1

2

3

4

5

6

7

8

9

3

1

0.1

0.001

0.01

0

25

50

40

75

100

125

150

0

0.2

0.1

0.5

0.4

0.3

25

°

C

100

°

C

Ta=150

°

C

60

°

C

0.6

1.0 1.4

1.8

 0.2

2.2

2.6

3.0

T  

a

    150

°

C

=

    60

°

C

    100

°

C

    25

°

C

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Ambient Temperature   Ta (

°

C)

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Ta — I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Forward Voltage   V

(V)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

T  — I

F (AV)

   Characteristics   

Lead Temperature   T   (

°

C)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

With Heatsink

W

ithout H

eatsink

With Heatsink

Without Heatsink

With Heatsink

W

ithout H

eatsink

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

95

FMP-G2FS

FMQ-G2FLS

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

20

10

1

0.1

0.001

0.01

0

0.5

1.0

1.5

2.0

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

0

1

2

3

4

4

8

12

16

20

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

5

T

t

T    150

°

C

=

j

70

0

90

150

1

2

4

3

5

130

110

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3, Sinewave

=

0

10

8

6

4

2

0

150

25

50

75

100

125

t / T=1/6

t / T=1/ 3

t / T=1/2

DC

t

T

Tj=150

°

C

0

30

25

10

2

4

6

8

20

15

10

0

5

Sinewave

t / T=1/6

t / T=1/ 3

t / T=1/2

DC

Sinewave

FMQ-G2FS

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

0

160

6

8

4

10

0

40

80

120

t / T=1/6

D.C.

2

t / T=1/3, Sinewave

t / T=1/2

0

10

30

40

0

2

6

8

4

t / T=1/6

t / T=1/2

D.C.

10

20

Tj=

150

°

C

T

t

t / T=1/3, Sinewave

FMQ-G1FS

0

40

80

120

160

0

2

1

3

5

4

t / T=1/2

t / T=1/3

Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

V

R

=1500V

0

500

1500

1000

0

0.6

0.4

0.3

0.2

0.5

0.6

0.7

1– t / T=1/2

1– t / T=2/3

1– t / T=5/6

Sinewave

Tj=

150

°

C

T

t

0

2

1

5

3

4

0

5

10

15

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=

150

°

C

T

t

FMQ-G2FMS

0

50

100

150

0

4

2

6

10

8

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

0

4

2

10

6

8

0

10

5

30

25

20

15

35

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=

150

°

C

T

t

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Reverse Voltage    V

(V)

Reverse Power Loss   P

(W)

V

R

—P

R

  Characteristics

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Characteristic Curves

Damper Diodes

 

Allegro_Silicon_Diodes-html.html
background image

96

FMP-G5HS

FMU-G2FS

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.001

0.01

0

1.0

2.0

3.0

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

0

2

4

6

4

8

12

16

20

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

8

T

t

T    150

°

C

=

j

90

0

150

2

4

8

6

130

140

120

110

100

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3, Sinewave

=

FMQ-G5FMS

FMQ-G5GS

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.001

0.01

0

0.5

1.0

1.5

2.0

3.0

2.5

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

80

0

90

100

150

2

8

4

10

6

130

140

110 120

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

0

0

2

4

6

8

5

10

15

20

25

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

10

50

10

1

0.1

0.001

0.01

0

0.5

1.0

1.5

2.0

2.5

3.5

3.0

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

40

0

60

80

160

140

2

4

8

6

10

120

100

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

T

t

T    150

°

C

=

j

0

0

2

4

6

8

10

20

30

40

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

10

T

t

T    150

°

C

=

j

0

0.4

0.8

1.6

1.2

2.2

2.0

0.001

1

0.1

0.01

10

100

0

400

800

1200

1600

0.001

1

0.1

0.01

10

0

2

4

6

8

10

0

5

10

15

20

25

t / T = 1/ 3, Sinewave

t / T =1/2

D.C.

t / T =1/6

T

t

Tj =150ºC

0

50

100

150

0

2

4

6

8

V

R

=1500V

10

T

t

Tj =150ºC

t / T =1/2

D.C.

t / T =1/3

t / T =1/6

Sinewave

Ta =150

°

C

100

°

C

60

°

C

R.T 

Ta =150

°

C

100

°

C

60

°

C

R. T

FMR-G5HS

10

20

50

40

30

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.001

0.01

0

0.5

1.0

1.0

1.5

2.0

T  

a

    125

°

C

=

    60

°

C

    100

°

C

    25

°

C

0

0

2

4

6

8

4

8

12

16

20

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

10

T

t

T    150

°

C

=

j

100

0

110

150

2

4

8

6

10

140

130

120

t / T   1/6

=

t / T   1/2

=

D.C.

t / T   1/ 3, Sinewave

=

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Reverse Voltage    V

(V)

Reverse Current   I

(mA)

V

R

—I

R

  Characteristics 

(Typical)

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

I

FSM

 (A)

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

97

FMV-G5FS

10

20

50

40

30

0

 

1

 

5

 

50

 10

20ms

0.2

0.4

50

10

0.1

1

0.01

1.6

1.2

1.4

0.6

0.8

1.0

0.002

0

0

2

4

6

8

5

15

10

20

25

30

10

T

t

T    150

°

C

=

j

=

t / T   1/6

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

90

0

110

100

130

120

140

150

2

4

6

8

10

t / T   1/6

=

t / T   1/ 3, Sinewave

=

t / T   1/2

=

D.C.

Tj=150

°

C

    60

°

C

    25

°

C

    100

°

C

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

DC

t / T    1/6

=

t

T

1

50

10

0.1

0.01

0.001

0

0.5

1.0

1.5

2.0

0

25

5

1

2

3

4

20

15

10

0

5

t

T

T     150

°

C

j =

I

F

DC

t / T    1/ 6

=

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

FMV-3FU

10

40

30

20

50

0

 

1

 

5

 

50

 10

20ms

20

0

40

60

80

100

120

140

160

1

2

3

4

5

Around backside mounting hole

0

0.5

1.0

1.5

2.0

25

°

C

100

°

C

150

°

C

60

°

C

50

10

1

0.1

0.001

0.01

25

°

C

100

°

C

150

°

C

60

°

C

t / T    1/ 6

=

t / T    1/2

=

DC

90

0

100

110

120

130

140

150

1

2

3

4

5

FMV-3GU

10

40

30

20

50

0

 

1

 

5

 

50

 10

20ms

50

10

1

0.1

0.01

0.002

0

0.4

0.8

1.2

1.6

2.0

25

°

C

100

°

C

Tj=150

°

C

60

°

C

1

50

10

0.1

0.01

0.002

0

0.2

0.4

0.6

0.8

1.0

1.4

1.2

25

°

C

100

°

C

Tj=150

°

C

60

°

C

0

25

5

1

2

3

4

20

15

10

5

0

t / T    1/ 3

, Sinewave

=

t

T

T     150

°

C

j =

t / T    1/6

=

t / T    1/2

=

DC

t / T    1/ 3, Sinewave

=

I

FSM

 (A)

I

FSM

 (A)

R

th(j-- c)

=1.8

°

C/ W

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Forward Current   I

(A)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Case Temperature  Tc 

(

°

C)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Case Temperature  Tc 

(

°

C)

Tc— I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

(For Damper)

V

F

— I

F

  Characteristics

 (Typical)

(For Compensation)

Forward Current   I

(A)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

Forward Voltage   V

(V)

Forward Current   I

(A)

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

(For Damper)

V

F

— I

F

  Characteristics

 (Typical)

(For Compensation)

I

FSM

 (A)

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

98

20

0

Half-cycle 

sinewave       

t / T    1/ 3

=

t / T    1/2

=

DC

40

60

80

100

120

140

160

1

2

3

4

5

Around backside mounting hole

t

T

FMP-3FU

10

40

30

20

50

0

 1

 5

 50

 10

20ms

0

25

5

1

2

3

4

20

15

10

0

5

Half-cycle sinewave

t / T    1/ 3

=

t / T    1/2

=

DC

t

T

T     150

°

C

j

=

I

F

20
10

1

0.1

0.01

0.001

0

0.5

1.0

1.5

2.0

25

°

C

100

°

C

150

°

C

60

°

C

1

20
10

0.1

0.01

0.001

0

0.5

1.0

1.5

2.5 

2.0

25

°

C

100

°

C

150

°

C

60

°

C

0

40

5

1

2

3

4

30

20

10

0

t

T

T     150

°

C

j

=

FMQ-3GU

10

40

30

20

50

0

 1

 5

 50

 10

20ms

50

10

1

0.1

0.01

0.001

0

2

1

4

5

3

6

7

8

25

°

C

100

°

C

Tj =150

°

C

60

°

C

1

50

10

0.1

0.01

0.001

0

0.5

1.0

1.5

2.0

3.0

2.5

25

°

C

100

°

C

Tj =150

°

C

60

°

C

t / T    1/6

=

t / T    1/2

=

DC

t / T    1/ 3, Sinewave

=

t / T    1/2

=

DC

t / T    1/6

=

70

0

90

110

130

150

1

2

3

4

5

t / T    1/ 3, Sinewave

=

I

FSM

 (A)

I

FSM

 (A)

R

th(j-- c)

=1.8

°

C/ W

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Case Temperature  Tc 

(

°

C)

Forward Current   I

(A)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

(For Damper)

V

F

— I

F

  Characteristics

 (Typical)

(For Compensation)

Forward Voltage   V

(V)

Forward Voltage   V

(V)

Case Temperature  Tc 

(

°

C)

Forward Current   I

(A)

Forward Current   I

(A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

V

F

— I

F

  Characteristics

 (Typical)

I

FMS

   Rating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

(For Damper)

V

F

— I

F

  Characteristics

 (Typical)

(For Compensation)

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

99

10

40

30

20

50

0

 1

 5

 50

 10

20ms

t / T=1/ 3

t / T=1/2

DC

t

T

Tj= 150

°

C

0

30

25

5

1

2

3

4

20

15

10

0

5

Sinewave

0

5

4

3

2

1

0

150

25

50

75

100

125

t / T=1/ 3

t / T=1/2

DC

Sinewave

FMP-2FUR

FMQ-2FUR

0

25

50

75

100

125

150

0

2

1

3

5

4

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

0

2

1

5

3

4

0

5

15

10

20

t / T=1/2

t / T=1/3, Sinewave

t / T=1/6

D.C.

Tj=150

°

C

T

t

I

FSM

 (A)

Overcurrent Cycles

Peak For

ward Surge Current    I

FSM 

(A)

I

FMS

   Rating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

Case Temperature  Tc 

(

°

C)

Average Forward Current    I

F

(AV) 

(A)

Tc— I

F (AV)  

Derating

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

(W)

Average Forward Current   I

F(AV) 

(A)

I

F(AV)

—P

F

  Characteristics

Forward Power Loss   P

F  

(W)

Average Forward Current   I

F(AV) 

(A)

Characteristic Curves

Damper Diodes

Allegro_Silicon_Diodes-html.html
background image

100

RZ1030

50

40

45

35

36

30

30

31.9

25

25.9

20

22

–10

0

25

50

75

100

125

max

min

V

RDC 

Temperature characteristic 

22

20

21

19

18

–10

0

25

50

75

100

125

RZ1040

55

45

50

40

35

38

30

25

28

–10

0

25

50

75

100

125

max

min

30

28

29

27

26

–10

0

25

50

75

100

125

RZ1055

70

60

65

55

67

57

50

57.6

45

47.6

40

–10

0

25

50

75

100

125

max

min

45

40

35

–10

0

25

50

75

100

125

RZ1150

190

170

180

160

178

158

150

153.7

140

130

133.7

125

–10

0

25

50

75

100

125

max

min

140

130

135

125

120

–10

0

25

50

75

100

125

RZ1175

210

190

200

180

207

187

170

177.3

160

150

157.3

–10

0

25

50

75

100

125

max

min

160

150

155

145

140

–10

0

25

50

75

100

125

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

RDC 

Temperature characteristic 

V

RDC 

Temperature characteristic 

V

RDC 

Temperature characteristic 

V

RDC 

Temperature characteristic 

Characteristic Curves

Avalanche Diodes with built-in Thyristor

Allegro_Silicon_Diodes-html.html
background image

101

RZ1200

250

230

240

220

245

225

210

200

204.5

190

170

180

184.5

–10

0

25

50

75

100

125

190

185

180

175

170

–10

0

25

50

75

100

125

min

max

EZ0150

190

170

180

160

178

158

150

153.7

140

130

125

133.7

–10

0

25

50

75

100

125

max

min

140

130

135

125

120

–10

0

25

50

75

100

125

V

RDC 

Temperature characteristic 

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

V

RDC 

Temperature characteristic 

V

Temperature dependence

Reverse breakdown voltage  V

(V)

V

R(DC)  

Temperature characteristic

 

Ambient Temperature  Ta (

°

C)

Ambient Temperature  Ta (

°

C)

DC reverse blocking voltage  V

R

(DC)

 

(V)

Characteristic Curves

Avalanche Diodes with built-in Thyristor

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background image

102

PZ 628

0

0

40

3

6

20

100

5

4

1

I   60A

=

Z

40A

80

2

1

0

10

80

5

100

60

40

50

20

60

20A

Rectangular Wave Pulse

Pulse — V

ZUP

  Characteristics

Breakdown voltage variation

  V

ZUP

 

(V)

Conduction  Pulse Width (ms)

Pulse Width — I

R

  Characteristics

Reverse Current  I

R

 

(A)

Pulse Width (ms)

Characteristic Curves

Power Zener Diodes

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103

SV-2SS, 3SS, 4SS

20

80

40

60

100

0

 0

20

 100

40

60

 80

1

5

10

50

 0.5

100

0

10

8

6

4

2

12

0.01

1

10

100

1000

0.1

0

1

2

3

4

SV-2SS

SV-4SS

SV-3S

S

SV-2SS

SV-4SS

SV-3SS

VR-60SS, 61SS

20

80

40

60

100

0

 0

20

 100

40

60

 80

1

5

10

50

 0.5

100

0

10

8

6

4

2

12

0.01

1

10

100

1000

0.1

0

1

2

3

4

VR-61SS

VR-60SS

VR-60SS

VR-61SS

SV 02YS, 03YS, 04YS, 05YS, 06YS

20

80

40

60

100

0

30

50

 130

70

90

110

1

5

10

50

 0.5

100

0

9

6

3

12

15

1

10

100

1000

0.1

0

1

2

3

6

4

5

SV 06YS

SV 05YS

SV 04YS

SV 03YS

SV 02YS

SV 06YS

SV 05YS

SV 04YS

SV 03YS

SV 02YS

Ambient tamperature    Ta (

°

C)

Percentage against DC current   (%)

Forward current     I

(mA)

I

(%) —Ta Characteristics

Forward current     I

(mA)

Forward voltage    V

F

 

(A)

V

F

—I

F

 Characteristics  

(Typical)

V

F

—I

F

 Characteristics  

(Typical)

Forward voltage variation per 

ºC      V

(mV/

ºC)

Ambient tamperature    Ta (

°

C)

Percentage against DC current   (%)

Forward current     I

(mA)

I

(%) —Ta Characteristics

Forward current     I

(mA)

Forward voltage    V

F

 

(A)

V

F

—I

F

 Characteristics  

(Typical)

V

F

—I

F

 Characteristics  

(Typical)

Forward voltage variation per 

ºC      V

(mV/

ºC)

Ambient tamperature    Ta (

°

C)

Percentage against DC current   (%)

Forward current     I

(mA)

I

(%) —Ta Characteristics

Forward current     I

(mA)

Forward voltage    V

F

 

(A)

V

F

—I

F

 Characteristics  

(Typical)

V

F

—I

F

 Characteristics  

(Typical)

Forward voltage variation per 

ºC      V

(mV/

ºC)

Characteristic Curves

Silicon Varistors

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104

Ordinary Diodes

2

 Mounting

To mount a frame-type diode on a heatsink, use its 
screwhole. Do not fix its resin body as the silicon chip 
may get broken.

3

 Temperature measurement

For an axial type diode, measure the temperature of the 
lead wire on the main body side. The thermocouple to 
be used must be as thin as possible (approximately 

0.125).

4

  Temperature rise

A diode’s temperature increases due to losses from 
forward current, reverse current and reverse recovery 
time.
In normal use, losses are mainly attributable to forward 
current and voltage. However, in high frequency 
circuits such as switching power supplies, losses due to 
reverse recovery time also occurs. Moreover, in diodes 
having large reverse currents like Schottky barrier 
diodes losses due to reverse current cannot be disre-
garded.
Forward loss tends to decrease at high temperatures. 
However, reverse loss tends to increase at high tem-
peratures. Therefore, it is necessary to consider the 
ambient temperature when verifying operation.

5

 Inrush current

In a capacitor-input type rectifier circuit, inrush current 
flows when the power supply is switched on. The peak 
value of this inrush current shall be set less than peak
forward surge current I

FSM 

(I

t can also be obtained

but set the minimum pulse width to 1 msec). The value 
of I

FSM

 is guaranteed for a single shot only. If the 

inrush current is repeated within a short period of time, 
the derating has to be taken into account.

 6

 Peak value current

Limit of the peak value current must be set to 10 times 
of the average current (Io or I

F (AV)

) under normal use. 

If the peak value increases. the diode’s forward loss 
also increases. In this case, check the temperature rise.

  Carefully study the mounting method when the 
usage environment is prone to creeping discharge.

    Surface Mount Diodes

 

      (SFP    - 5    / 6    ) 

 Soldering (flow, reflow)

 i)  Use rosin based flux. Never use acidic fluxes. 
ii) To prevent the build-up of large thermal stress, 
    preheat within 1 to 2 minutes at 150ºC and solder 
     within the usable range shown below. 

iii) When using a soldering iron, make use of the 
        following references:
             Temperature of soldering Iron Tip:

less than 300ºC
(Power of the soldering 
iron: 30W or less) 
The soldering tip must 
be as thin as possible. 

             Soldering time: less than 10 seconds

Contact us if there is any unclear point.

Fixed

Bend

Fixed

Bend

Axial type

Frame type

160

180

200

220

240

260

280

300

0

10

20

30

40

50

60

70

80

2.0

2.0

4.0 to 4.2

2.0

REFERENCE

: Copper foil land for 

 mounting SFP series 
 diodes. 

(Unit: mm)

1

 Lead forming

When forming leads, hold the lead wire on the main 
body’s side so as to prevent stress from being applied 
to the main body.

Soldering Temperature (

ºC)

Time (sec)

Usable range

Application Notes

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105

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Part Number

Explanation

Page

Part Number

Explanation

Page

Part Number

Explanation

Page

AG01

AG01A

AG01Y

AG01Z

AK  03

AK  04

AK  06

AK  09

AL01Z

AM01

AM01A

AM01Z

AP01C

AS01

AS01A

AS01Z

AU01

AU01A

AU01Z

AU02

AU02A

AU02Z

AW 04

EA  03

EG  1

EG  1A

EG  1Y

EG  1Z

EG01

EG01A

EG01C

EG01Y

EG01Z

EH  1

EH  1A

EH  1Z

EK  03

EK  04

EK  06

EK  09

EK  13

EK  14

EK  16

EK  19

EL  1

EL  1Z

EL02Z

EM  1

EM  1A

EM  1B

29

30

25

26

35

36

38

39

26

14

15

13

33

20

21

19

20

21

19

20

21

19

36

35

29

30

25

26

29

30

33

25

26

20

21

19

35

36

38

39

35

36

38

39

29

26

26

14

15

16

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Avalanche Diodes with built-in Thyristor

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

EM  1C

EM  1Y

EM  1Z

EM  2

EM  2A

EM  2B

EM01

EM01A

EM01Z

EN01Z

EP01C

ES  1

ES  1A

ES  1F

ES  1Z

ES01

ES01A

ES01F

ES01Z

EU  1

EU  1A

EU  1Z

EU  2

EU  2A

EU  2YX

EU  2Z

EU01

EU01A

EU01Z

EU02

EU02A

EU02Z

EZ1050

FMB-2204

FMB-2206

FMB-2304

FMB-2306

FMB-24

FMB-24H

FMB-24L

FMB-24M

FMB-26

FMB-26L

FMB-29

FMB-29L

FMB-34

FMB-34M

FMB-34S

FMB-36

FMB-36M

17

12

13

14

15

16

14

15

13

26

33

20

21

24

19

20

21

24

19

20

21

19

20

21

18

19

20

21

19

20

21

19

44

36

38

36

38

36

36

36

36

38

38

39

39

36

36

36

38

38

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

FMB-39

FMB-39M

FMB-G14

FMB-G14L

FMB-G16L

FMB-G19L

FMB-G24H

FMC-26U

FMC-26UA

FMC-28U

FMC-28UA

FMC-G28S

FMC-G28SL

FMD-G26S

FME-220A

FME-230A

FME-24H

FME-24L

FMG-12S,R

FMG-13S,R

FMG-14S,R

FMG-22S,R

FMG-23S,R

FMG-24S,R

FMG-26S,R

FMG-32S,R

FMG-33S,R

FMG-34S,R

FMG-36S,R

FMG-G26S

FMG-G2CS

FMG-G36S

FMG-G3CS

FMJ-2203

FMJ-2303

FMJ-23L

FML-12S

FML-13S

FML-14S

FML-22S

FML-23S

FML-24S

FML-32S

FML-33S

FML-34S

FML-36S

FML-G12S

FML-G13S

FML-G14S

FML-G16S

39

39

36

36

38

39

36

30

34

32

34

32

32

30

39

39

36

36

26

28

29

26

28

29

30

26

28

29

30

30

33

30

33

35

35

35

26

28

29

26

28

29

26

28

29

30

26

28

29

30

Product Index by Part Number

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background image

Part Number

Explanation

Page

Part Number

Explanation

Page

Part Number

Explanation

Page

106

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Diode modulation)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Damper Diode (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

FML-G22S

FML-G26S

FMM-22S,R

FMM-24S,R

FMM-26S,R

FMM-31S,R

FMM-32S,R

FMM-34S,R

FMM-36S,R

FMN-G12S

FMN-G14S

FMN-G16S

FMP-2FUR

FMP-3FU

FMP-G12S

FMP-G2FS

FMP-G5HS

FMQ-2FUR

FMQ-3GU

FMQ-G1FS

FMQ-G2FLS

FMQ-G2FMS

FMQ-G2FS

FMQ-G5FMS

FMQ-G5GS

FMR-G5HS

FMT-2FUR

FMU-12S,R

FMU-14S,R

FMU-16S,R

FMU-21S,R

FMU-22S,R

FMU-24S,R

FMU-26S,R

FMU-32S,R

FMU-34S,R

FMU-36S,R

FMU-G16S

FMU-G26S

FMU-G2FS

FMU-G2YXS

FMV-3FU

FMV-3GU

FMV-G5FS

FMW-24H

FMW-24L

FMX-12S

FMX-22S

FMX-22SL

FMX-23S

26

30

13

14

15

12

13

14

15

26

29

30

41

41

26

24,40

24,40

41

41

24,40

24,40

24,40

24,40

24,40

24,40

24,40

41

19

20

21

18

19

20

21

19

20

21

21

21

24,40

18

41

41

24,40

36

36

26

26

26

28

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

High-Voltage Rectifier Diodes for Microwave Oven

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Power Zener Diodes (Axial)

Schottky Barrier Diodes (Axial)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Ultra-Fast-Recovery Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Schottky Barrier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Ultra-Fast-Recovery Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (For Compensation)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (For Compensation)

FMX-32S

FMX-33S

FMX-G12S

FMX-G14S

FMX-G16S

FMX-G22S

FMX-G26S

HVR-1X-40B

MI1A3

MI2A3

MPE-24H

MPE-29G

PZ  628

RA  13

RBV-1306

RBV-1506

RBV-1506S

RBV-2506

RBV-401

RBV-402

RBV-402L

RBV-404

RBV-406

RBV-406B

RBV-406H

RBV-406M

RBV-408

RBV-40C

RBV-4102

RBV-601

RBV-602

RBV-602L

RBV-604

RBV-606

RBV-606H

RBV-608

RC  2

RC  3B2

RF  1

RF  1A

RF  1B

RF  1Z

RG  10

RG  10A

RG  10Y

RG  10Z

RG  1C

RG  2

RG  2A

RG  2A2

26

28

26

29

30

26

30

42

35

35

36

39

45

35

15

15

15

15

12

13

26

14

15

38

15

15

16

17

13

12

13

26

14

15

15

16

24

40

20

21

22

19

29

30

25

26

33

29

30

40

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

RG  2Y

RG  2Z

RG  4

RG  4A

RG  4C

RG  4Y

RG  4Z

RH  1

RH  10F

RH  1A

RH  1B

RH  1C

RH  1Z

RH  2D

RH  2F

RH  3F

RH  3G

RH  4F

RJ  43

RK  13

RK  14

RK  16

RK  19

RK  33

RK  34

RK  36

RK  39

RK  43

RK  44

RK  46

RK  49

RL  10Z

RL  2

RL  2A

RL  2Z

RL  3

RL  3A

RL  3Z

RL  4A

RL  4Z

RM  1

RM  10

RM  10A

RM  10B

RM  10Z

RM  11A

RM  11B

RM  11C

RM  1A

RM  1B

25

26

29

30

33

25

26

20

24,40

21

22

23

19

24,40

24,40

24,40

24,40

24,40

35

35

36

38

39

35

36

38

39

35

36

38

39

26

29

30

26

29

30

26

30

26

14

14

15

16

13

15

16

17

15

16

Product Index by Part Number

Allegro_Silicon_Diodes-html.html
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107

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

RM  1C

RM  1Z

RM  2

RM  2A

RM  2B

RM  2C

RM  2Z

RM  3

RM  3A

RM  3B

RM  3C

RM  4

RM  4A

RM  4AM

RM  4B

RM  4C

RM  4Y

RM  4Z

RN  1Z

RN  2Z

RN  3Z

RN  4Z

RO  2

RO  2A

RO  2B

RO  2C

RO  2Z

RP  1H

RP  3F

RS  1A

RS  1B

RS  3FS

RS  4FS

RU  1

RU  1A

RU  1B

RU  1C

RU  1P

RU  2

RU  20A

RU  2AM

RU  2B

RU  2C

RU  2M

RU  2YX

RU  2Z

RU  3

RU  30

RU  30A

RU  30Y

17

13

14

15

16

17

13

14

15

16

17

14

15

15

16

17

12

13

26

26

26

26

14

15

16

17

13

34

24,40

21

22

24,40

24,40

20

21

22

23

33

21

21

21

22

23

20

18

19

20

20

21

18

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

RU  30Z

RU  31

RU  31A

RU  3A

RU  3AM

RU  3B

RU  3C

RU  3M

RU  3YX

RU  4

RU  4A

RU  4AM

RU  4B

RU  4C

RU  4D

RU  4DS

RU  4M

RU  4Y

RU  4YX

RU  4Z

RX  3Z

RZ1030

RZ1040

RZ1055

RZ1065

RZ1100

RZ1125

RZ1150

RZ1155

RZ1175

RZ1200

SFPA-53

SFPA-63

SFPA-73

SFPB-54

SFPB-56

SFPB-59

SFPB-64

SFPB-66

SFPB-69

SFPB-74

SFPB-76

SFPE-63

SFPE-64

SFPJ-53

SFPJ-63

SFPJ-73

SFPL-52

SFPL-62

SFPM-52

19

20

21

21

21

22

23

20

18

20

21

21

22

23

24,40

24,40

20

18

18

19

26

44

44

44

44

44

44

44

44

44

44

35

35

35

36

38

39

36

38

39

36

38

35

36

35

35

35

26

26

13

Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Power Zener Doides (Surface Mount)

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Power Zener Doides (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

High-Voltage Rectifier Diodes for Microwave Oven

Silicon Varistors (Axial)

Silicon Varistors (Axial)

SFPM-54

SFPM-62

SFPM-64

SFPX-62

SFPX-63

SFPZ-68

SHV-02

SHV-03

SHV-03S

SHV-05JS

SHV-06EN

SHV-08DN

SHV-08EN

SHV-08J

SHV-10

SHV-10DN

SHV-10EN

SHV-12

SHV-12DN

SHV-12EN

SHV-14

SHV-16

SHV-20

SHV-24

SHV-30J

SPB-64S

SPB-66S

SPB-G34S

SPB-G54S

SPB-G56S

SPJ-63S

SPJ-G53S

SPX-62S

SPX-G32S

SPZ-G36

SSB-14

SV  02YS

SV  03YS

SV  04YS

SV  05YS

SV  06YS

SV-2SS

SV-3SS

SV-4SS

UX-F5B

VR-60SS

VR-61SS

14

13

14

26

28

45

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

36

38

36

36

38

35

35

26

26

45

36

47

47

47

47

47

46

46

46

42

46

46

Part Number

Explanation

Page

Part Number

Explanation

Page

Part Number

Explanation

Page

Product Index by Part Number

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