Power Semiconductor & IC

Selection Guide

A comprehensive portfolio of power semiconductor 

and integrated circuit technologies in industry 

standard and innovative packages

3

Littelfuse.com

2

©2024 Littelfuse, Inc

Littelfuse: Everywhere, Every Day

Founded in 1927, Littelfuse is a diversified industrial technology 
manufacturing company empowering a sustainable, connected, and 
safer world. Across more than 20 countries, and with approximately 
18,000 global associates, we partner with customers to design and 
deliver innovative, reliable solutions.

Littelfuse offers an extensive technology portfolio - fuses, 
semiconductors, polymers, ceramics, relays, sensors, switches, and 
more. Serving over 100,000 end customers, our products are found in 
a variety of industrial, transportation, and electronics end markets—
everywhere, every day.

Why Choose Littelfuse

Our history of innovation, combined with our customer-first culture, 
drives us to collaborate with you to develop safer, more reliable 
products that are energy efficient and compliant with global 
regulations. We will partner with you to solve complex problems 
wherever electrical energy is used, bringing design, engineering, and 
technical expertise to deliver business results.

Complementing our wide portfolio of products is a global network of 
design and technical support expertise. We offer decades of design 
experience to help you address application challenges and achieve 
regulatory compliance.

Your Single Source

Littelfuse offers an extensive power semiconductor product line. We 
design forward-thinking, application-specific solutions to provide 
assurance that your most demanding requirements will be met. Our 
goal is to provide the most complete range of options so you will not 
have to compromise.

Testing Support

Littelfuse can help ensure that your products withstand most 
common threats repeatedly and fail safely under extreme 
circumstances. We can serve as an independent source to provide 
assistance as you design, by offering lab testing capabilities for 
customer applications. This testing includes industry-specific required 
power fault and electrostatic discharge (ESD) / electrically fast 
transients (EFT) / lightning surge conditions.

Application Knowledge

For over 97 years, engineers and designers around the world have 
relied on Littelfuse products and application knowledge to support 
their designs.

Global Support

Littelfuse stays close to customers. With manufacturing, lab, and 
design facilities located around the globe, application knowledge 
and technical support are locally available. Also, we offer a network 
of regional customer support offices and hundreds of independent 
authorized distributor contacts to assist you.
Visit 

Littelfuse.com/contact-us

 to find local support near you.

Operational Excellence

With our global manufacturing footprint, Littelfuse is firmly 
committed to manufacturing quality products at a competitive price. 
We build quality into our products and services, striving for zero 
defects in everything we do, thereby reducing cost and increasing 
your total satisfaction. We strive to exceed expectations every day.

Quality Assurance

Our global manufacturing facilities abide by strict quality assurance 
requirements and hold the following quality management system 
registrations:

• 

ISO 9001

• 

ISO14001

• 

IATF 16949

About this guide

This selection guide offers a comprehensive look at the breadth and depth of the Littelfuse power semiconductor and control IC portfolio. From 
milliwatt to gigawatt system solutions and everything in between, we’ve got the devices that meet your needs.

General

 ......................................................................................................

4

Nomenclature

 .......................................................................................

4

Featured Packages

 ..................................................................................

12

PressFit-Pin

 ..........................................................................................

12

High-voltage / ISO- Discrete

 ...............................................................

13

TO-247-4L

.............................................................................................

18

ISOPLUS-SMPD™

...............................................................................

19

ISOPLUS-DIL™ / ISOPLUS i4-PAC™

 .................................................

24

IGBT Discretes

.........................................................................................

28

XPT™

 ...................................................................................................

30

Very High Voltage

 ................................................................................

38

Reverse Conducting (BiMOSFET)

......................................................

39

IGBT Modules

 .........................................................................................

40

Six Pack

 ................................................................................................

40

CBI

 ........................................................................................................

41

Buck / Boost / Phase Leg

 ....................................................................

42

Power MOSFET

 .......................................................................................

43

Trench

 ..................................................................................................

45

Polar™

 .................................................................................................

50

Ultra Junction

 .....................................................................................

58

Q-Class

.................................................................................................

64

Very High Voltage

 ................................................................................

65

Standard

 ..............................................................................................

66

Linear

 ...................................................................................................

67

Depletion-mode

 ..................................................................................

69

P-Channel

.............................................................................................

71

Super Junction

 ....................................................................................

73

Multi-chip Configurations

 ..................................................................

74

Diodes

 ......................................................................................................

76

Silicon Schottky

 ..................................................................................

77

HiPerDyn™ FREDs & Dual Ultrafast

 ..................................................

82

HiPerFRED2

TM

 & HiPerFRED

...............................................................

83

SONIC-FRD™

 ......................................................................................

85

FRED

 ....................................................................................................

86

FRED & HiPerFRED Modules & Semifast

 ..........................................

88

Silicon Carbide Schottky

 ....................................................................

89

Rectifier  &  Avalanche Types

 ...............................................................

90

Breakover Diodes

 ....................................................................................

93

Thyristors

.................................................................................................

96

Phase Control

 ......................................................................................

96

Triode

 ...................................................................................................

97

SCR

 ......................................................................................................

98

TRIAC

 .................................................................................................

100

Rectifier Modules

 ..................................................................................

103

Diode Modules – Single and Dual

 ...................................................

104

Thyristor / Diode Modules

 ...............................................................

107

Thyristor Modules – Single and Dual

 ...............................................

110

Bridges with Fast Diodes

 ..................................................................

115

Single-Phase

 ......................................................................................

116

Three-Phase

 .......................................................................................

118

Three Phase, with Brake Unit

 ..........................................................

121

AC  Controller, TRIAC

 .........................................................................

123

Braking Rectifier Assemblies

 ...........................................................

123

Solid-state Relays

 .................................................................................

124

Gate Driver ICs

 ......................................................................................

136

MCU & Cap-sense Touch

 ......................................................................

146

High Power Devices

 ..............................................................................

152

Rectifier Diodes

 .................................................................................

152

Fast Recovery Diodes

 .......................................................................

157

Soft Recovery Diodes

 .......................................................................

159

Extra Fast Recovery Diodes

 .............................................................

162

Sonic FRDs

 ........................................................................................

163

Phase  Control Thyristors

 ..................................................................

164

Medium Voltage Thyristors

 ..............................................................

172

Fast Turn  Off Thyristors

 ......................................................................

174

Distributed  Gate Thyristors

 ..............................................................

176

Asymmetric and Pulse Thyristors

 ....................................................

181

Gate Turn  Off  (GTO) Thyristors

 .........................................................

182

Press-Pack IGBTs

 ..............................................................................

185

Stacks and Accessories

 ........................................................................

187

Modular Solutions

 ............................................................................

189

Bar Clamps

 ........................................................................................

193

Box Clamps and Heat Sinks

 .............................................................

197

Coolers

 ..............................................................................................

198

Power Semiconductor Chips

 ...............................................................

199

Outline Drawings

 ..................................................................................

200

Alphanumeric Index

 .............................................................................

262

Specifications, descriptions, and illustrative material in this literature are as accurate as known at the 

time of publication but are subject to changes without notice. Visit littelfuse.com for more information.

Proudly presenting world-class 

power semiconductor and 

IC technologies, quality, and customer support.

Table of Contents

5

Littelfuse.com

4

©2024 Littelfuse, Inc

Stud Devices

Device Type
T

Press-pack IGBT

0

t

q

 code – see tables on page 4 for releant code

Device Polarity
S

Stud Anode

R

Stud Cathode

Device Type
W

Rectifier diode

M

Fast/Soft recovery diode

M

3/4" stud glass/metal

N

Phase control thyristor

P

Fast turn-off thyristor

S

Symmetrical Gate turn-off thyristor

Package
A

3/4” stud glass/metal

C

3/4” stud ceramic

E

3/4” HV ceramic stud with lug

F

3/4” HV ceramic stud

H

1/2” ceramic stud

J

1/2” ceramic stud with flag

L

M12 stud ceramic with lug

M

3/8” stud ceramic

R

M20 stud ceramic with lug & gate leads

Electrode diameter
Q

38 mm

N

47 mm

V

63 mm

H

66 mm

T

75 mm

E

85 mm

A

96 mm

D

110 mm

G

125 mm

B

132 mm

Build description for multiple square die
A

Reverse conducting

E

Asymmetric

G

Reverse conducting (IGBT to diode ratio of 2:1)

B

Die Series

C

F

0240  Device pulse current rating

0508  Device nominal current rating

04  Voltage grade - V

RRM

, V

DRM

/100

45  Voltage grade - V

RRM

/100

All Littelfuse Technology stud devices are available with or without leads, sleeving, nuts, and washers.
Please add one of the following three-letter codes (based on the options required) to the end of the part number when ordering: 

000

Leaded stud, no sleeving, no nuts and washers supplied

S0L

Leaded stud with standard* sleeving, nuts and washers supplied loose

00L

Leaded stud, no sleeving, nuts and washers supplied loose

NLL

Non-leaded stud, nuts and washers supplied loose (also applies to devices with flag/tag terminals)

S0F

Leaded stud with standard* sleeving, fitted nuts and washers

00F

Leaded stud, no sleeving, nuts and washers fitted

NLF

Non-leaded stud, nuts and washers fitted (also applies to devices with flag/tag terminals)

S00

Leaded stud with standard* sleeving, no nuts and washers supplied

NLS

Non-leaded stud, no nuts and washers fitted (also applies to devices with flag/tag terminals)

*

Standard sleeving means the following:

Red for all thyristor studs
Blue for “S” polarity diode studs
Red for “R” polarity diode studs

T 0240 N B 45 E

W 0508 S A 04 0

Device Type
W Rectifier diode

M

Fast/soft recovery diode

F

Extra fast diode

E

HP Sonic-FRD

TM

N

Phase control thyristor

R

Distributed gate thyristor

P

Fast turn-off thyristor

K

Medium voltage thyristor

A

Asymmetric thyristor

S

Symmetrical gate turn-off thyristor

H

Fast symmetrical gate turn-off thyristor

G

Asymmetric gate turn-off thyristor

Y

Pulse thyristor

Special Designator
0

t

q

 code (thyristors), V

RRM

 % of V

DRM

 for gate turn-off 

thyristors – see relevant tables

P

PIN diode (product groups: W, M, F, E)

R 

Rotating package (N, K, W)

A 

Avalanche-rated diode (W)

15 Voltage Grade - V

RRM

, V

DRM

/100

Electrode Diameter
W 

19 mm

Y 

25 mm

K 

29 mm

J 

32 mm

L 

34 mm

Q 

38 mm

D 

44 mm (‘B‘ thickness only), 110mm

N 

47 mm

M 

50 mm

P 

57 mm

V 

63 mm

H 

66 mm/68 mm

Z 

73 mm

T 

75 mm

E 

85 mm

F 

99 mm

G 

125 mm

Package

(electrode diameter in brackets)

A

26mm reverse build (Q, M, H, T, E, F)

B 

8mm (D)

C 

Standard outline14 mm (W, Y), 16 mm (K), 26 mm (L, Q, M, T, E, N)

D

21 mm (N), 24 mm (V, Z), 26 mm (F, G)

E 

35 mm inverse build (T, M, Q, E, H)

F 

19.5 mm (L), 26 mm (K, N, V), 35 mm (6.5 kV Sonic diode)

G 

35 mm (L, N)

H 

14 mm (N), 26 mm (Y)

J 

19.5 mm (N), 25.8 mm (V), 26 mm (T)

K 

Wespack 14.5 mm (J, Q, M, H)

L 

Wespack 26 mm (Q, M)

M 

Wespack 33 mm (H)

N 

14 mm (W, Y), 26 mm (L)

R 

Wespack 14 mm (Q), 26 mm (N)

0646 Device Nominal Current Rating

* For devices exceeding 9999 Amperes, digit 5 
of the part number is replaced with C (x0100)

W 0646 W C 15 0

t

q

 Code

v

No Code

A

10

M

70

B

12

N

100

C

15

P

120

D

20

R

140

E

25

S

160

F

30

T

200

G

35

V

250

H

40

W

300

J

50

X

400

K

60

Y

500

L

65

Z

1000

V

RRM

 % of V

DRM

 for GTO’s 

(S and H types only)

0

100%

D

80%

Y

100 V

Nomenclature

Capsule Devices – Excluding IGBT's

Nomenclature

Press-Pack IGBT Capsule Devices

6

7

©2024 Littelfuse, Inc

Littelfuse.com

© 2024 Littelfuse, Inc.

Content subject to change without notice.

Revised: XZ  04/02/2024

IX

Y

T

30

N

65

C3

*

H1

HV

Example

IX

IXYS – LF Technology

Package Type

A

TO-263

B

PLUS264™

C

ISOPLUS220™

E

ISOPLUS227™

F

ISOPLUS i4-PAC™

H

TO-247

I

TO-262

J

ISO247

K

TO-264

L

ISOPLUS i5-PAC™ (ISOPLUS264™)

M

TO-3

N

SOT227B

P

TO-220

Q

TO-3P

R

ISOPLUS247™

T

TO-268

V

PLUS220™

X

PLUS247™

Y

TO-252

Z

DE

Technology Series

B

BiMOSFET™

G

NPT, PT IGBT

H

MOS-gated thyristor

V

NPT Trench IGBT

X

Short-circuit rated XPT™

Y

XPT™

Voltage Class (Examples)

65

65 = 650 V

120

120 = 1200 V

250

250 = 2500 V

Switching Class

A

Low frequency (≤5 kHz) switching

B

Medium frequency (5 kHz - 20 kHz) switching

C

High frequency (≥20 kHz) switching

3

Gen.3 Die technology

4

Gen.4 Die technology

5

Gen.5 Die technology

6

Gen.6 Die technology

Copack Diode Type

C1

SiC diode

D1

FRED™ diode

H1

SONIC-FRD™ diode

V1

Other Si diode

Suffi x

M

Overmolded package

HV

High-voltage package

Current Rating (Examples)

at High Temperature *

30

30 = 30 A

200

200 = 200 A

400

400 = 400 A

Silicon Type

N

N = N-channel type

Discrete IGBT Nomenclature

Optional*

A

Automotive qualifi ed

© 2024 Littelfuse, Inc.

Content subject to change without notice.

Revised: XZ  04/02/2024

I

X

A

20

IF

1200

PZ

Example

I

IGBT

Chip Generation

A

XPT

E

Gen.5 Medium frequency (5 kHz – 20 kHz) switching

F

Gen.4 High frequency (≥20 kHz) switching

Current Rating (Examples)

at High Temperature

 

*

20

20 A

200

200 A

400

400 A

Confi guration

I

Single

R

Reverse blocking

IF

Co-Pack diode

RG

Boost confi guration

PG

Half-bridge with free wheeling and desat diode confi guration

PF

Half-bridge with free wheeling diode confi guration

Voltage Class (Examples)

600

600 = 600 V

1200

1200 = 1200 V

2500

2500 = 2500 V

Package Type

HB

TO-247AD (3)

HF

PLUS247™ (3)

HJ

ISOPLUS247™ (3)

HR

ISO247™ (3)

LB

SMPD-B

NA

SOT-227B (minibloc)

PB

TO-220AB (3)

PJ

ISOPLUS220™AB (3)

PZ

TO-263AB (D2PAC) (2HV)

TC

TO-268AA (D3PAC) (2)

UC

TO-252AA (DPAC)

Discrete IGBT Nomenclature

Technology Series

X

XPT™

Y

XPT Trench

T

Trench IGBT

Note

*

 Old technologies are rated at room temperature.

*

 Old technologies are rated at room temperature

Nomenclature

Discrete IGBT

8

9

©2024 Littelfuse, Inc

Littelfuse.com

© 2024 Littelfuse, Inc.

Content subject to change without notice.

Revised: XZ  04/02/2024

Discrete Si MOSFET Nomenclature

IX

T

X

6

N

200

P 3

HV

Example

MOSFET Type

T

Standard

F

HiPerFET™

Package Type

A

TO-263

B

PLUS264™

C

ISOPLUS220™

F

ISOPLUS i4-PAC™

G

TOLL

H

TO-247

J

ISO247

K

TO-264

L

ISOPLUS i5-PAC™ (ISOPLUS264™)

N

SOT227B

P

TO-220

Q

TO-3P

R

ISOPLUS247™

T

TO-268

X

PLUS247™

Y

TO-252

Z

DE

Current Rating @ 25 ˚C (Examples)

08

08 = 0.8 A

1R6

1R6 = 1.6 A

6

6 = 6 A

64

64 = 64 A

110

110 = 110 A

MOSFET Channel Type

N

N-Channel type

P

P-Channel type

Voltage Class (Examples)

055

055 = 55 V

06

06 = 60 V

50

50 = 500 V

200

200 = 2000 V

Technology Series Suffi x

Legacy / High Voltage

C

CoolMOS

®

D

Depletion

L

Linear

P

Polar™

Q

Q-Class

T

Trench

X

Ultra junction X-Class

Gen.1 Die technology

2

Gen.2 Die technology

3

Gen.3 Die technology

4

Gen.4 Die technology

Suffi x

–4

TO-247 w/ 4 leads

–7

TO-263 w/ 7 leads

A

Automotive qualifi ed

M

Overmolded package

HV

High-voltage package

–TRL

Tape and reel packing

IX

IXYS – LF Technology

Index

0

1

2

3

Value 1

4

5

Value 2

6 (a-c)

6 d

7

8

9

Example 1

M

I

X

G

120

W

1200

DPF

T

E

H

–

PC

Example 2

I

X

A

40

P

G

1200

DHG

L

B

–

TUB

Example 3

C

M

A

20

E

1600

P

Z

–

TRL

Index

Description

0

M = Module; no letter for discretes

1

Kind of main chip: C = SCR, D = Diode, I = IGBT, M = MOSFET

2

Chip technology

3

Chip generation respective to precisely defined technology

Value 1

Current rating

4

Basic circuit

5

Precisely defined circuit

Value 2

Voltage rating

6 (a-c)

as Index 1–3; usage (e.g. for special chips like SiC)

6 d

Specials (e.g., thermistor)

7

Basic package

8

Precisely defined package

Hyphen

-

9

Extras (e.g. delivery formats, auxiliaries)

•  Valid only for products fromL ittelfuse Lampertheim.
•  Usage for new technologies, chips, packages, and/or groups.
•  Newer data sheets contain description of part number.

Nomenclature

Discrete Si MOSFET

Nomenclature

11

Littelfuse.com

10

©2024 Littelfuse, Inc

Index 1 & 2

Description

Detailed

CL

High-Efficiency Thyristor

up to 1200 V

CM

Thyristor

up to 1800 V

CN

High-Voltage Thyristor

> 2000 V

DF

FRED

Gold

DH

Sonic Fast Recovery Diode

Helium

DL

Low Voltage Standard Rectifier

up to 1200 V

DM

Standard Rectifier

up to 1800 V

DN

High Voltage Standard Rectifier

> 2000 V

DP

HiPerFRED™

Platinum

DS

Schottky Diode

2nd Generation

IG

IGBT

PT (Punch Through)

IT

IGBT

Trench

IX

IGBT

XPT™

MK

Superjunction MOSFET

Powered by Infineon CoolMOS™ Bare Die

MT

MOSFET

Trench

Index 4

Description

Detailed

Index 4 & 5

A

Common anode/emitter/source

 Thyristor/diode

AD

B

1 Phase Rectifier Bridge

Half-controlled (high side)

BH

C

Common cathode/collector/drain

Thyristor/diode

CD

E

Single Part

 + Multiple cathode pins

EM

H

H Bridge

 + 1 Phase rectifier bridge

HD

I

Single Part

Copack

IF

M

AC-Controlling

 Triac

MT

P

Phase Leg

High-side thyristor low-side diode

PD

Q

Buck Chopper

 With series connected dice

QS

R

Boost/Brake Chopper

 + Freewheeling diode + V

ce,sat

-Diode

RG

S

Brake Chopper (Rating IGBT >> Rating Diode)

 + Freewheeling diode

SF

U

3 Phase Rectifier Bridge

 + Brake unit

UB

W

6-Pack

 + 3 Phase rectifier bridge & brake unit

WB

X

Parallel legs

Anti-parallel

XA

Y

Half 3 Phase Bridge

Common anode

YA

Index 7 & 8 Discretes

Description

Index 7 & 8 Discretes

Description

CA

ComPack

TA

TO-240AA-1B

CB

ComPack

TB

TO-240AA-1B

CC

ComPack

TG

TO-240AA-1B

ED

E2-Pack

VA

V1-A-Pack

EH

E3-Pack

VC

V1-B-Pack

KA

Y1-CU

VH

V2-Pack

KB

Y1-CU

YA

Y4-M6

KC

Y1-CU

YB

Y4-M6

SF

Simbus F

YD

Y4-M6

Index 6 d

Specials

Index 9

Packaging

P

PressFit-Pin

NI

No Metal Inserts

PT

PressFit-Pin + Thermistor

PC

Phase Change Material

PST

PressFit-Pin + Shunt + Thermistor

TRL

Tape & Reel Left

S

Shunt

TRR

Tape & Reel Right

T

Thermistor

TUB

Tube

Index 7 & 8 Discretes

Description

Index 7 & 8 Discretes

Description

FA

i4-Pac (3sym)

NB

SOT-227UI (minibloc)

FB

i4-Pac (3HV)

PA

TO-220AC (2)

FC

i4-Pac (5)

PB

TO-220AB (3)

FD

i4-Pac (5HC)

PC

TO-263AB (D

2

Pak) (2)

FE

i4-Pac (2HV)

PJ

ISOPLUS220™AB (3)

HA

TO-247AD (2)

PM

TO-220ACFP (2)

HB

TO-247AD (3)

PN

TO-220ABFP (3)

HF

PLUS247 (3)

PZ

TO-263AB (D

2

Pak) (2HV)

HI

ISOPLUS247™ (2)

QB

TO-3P (3)

HJ

ISOPLUS247™ (3)

TC

TO-268AA (D

3

Pak) (2)

HR

ISO247™ (3)

TZ

TO-268AA (D

3

Pak) (2HV)

IB

TO-262 (I

2

Pak) (3)

UC

TO-252AA (DPak)

LB

SMPD-B

UZ

TO-252AA (DPak) (2HV)

NA

SOT-227B (minibloc)

Examples for Indexes

Nomenclature

12

13

©2024 Littelfuse, Inc

Littelfuse.com

PressFit-Pin for E2, E3, and SimBus F Module Packages

Start with the Following Module Types:

Littelfuse presents new PressFit-Pin technology for E2 and E3 module 
packages. Modules equipped with these pins can be connected to the PCB 
without soldering. For the pressing process, either hand tools or pressing 
machines can be used. The benefits of the assembly are as follows:

• 

Simplified process

• 

Reduced mounting time

• 

No risk of bad solder contacts

• 

Reduced aging of pin contact

• 

No thermal stress for the PCB assembly

• 

Press-out is possible for maintenance

The pin concept is based on the proven “Bizon-pin” concept. The 
pressing process is a plastic deformation of pin and via of the board, 
ending in a cold welding. The pin features are as follows:

• 

Pin qualification according to IEC 60352-5

• 

High conductive Cu alloy with Ni gal. tin surface

• 

Very low contact resistance

• 

Low press-in force per pin; PCB hole diameter has independent 
press-out force

• 

Littelfuse PressFit-Pins are compatible to market standards

A Close Look at the PressFit-Pin Technology

Board and Via Requirements E2 and E3

Parameter

Min.

Typical

Max.

Drill hole diameter

–

2.35 mm

–

Final hole diameter

2.14 mm

2.20 mm

2.29 mm

Cu thickness inside the hole

>25 µm

–

–

Sn thickness inside the hole

–

–

<15 µm

Cu thickness for PCB tracks

35 µm

70 µm

105 µm

–

PCB thickness

1.60 mm

2.00 mm

–

Metallization PCB

chem. tin

–

–

Board and Via Requirements SimBus F

Parameter

Min.

Typical

Max.

Drill hole diameter

–

1.16 mm

–

Final hole diameter

1.00 mm

1.05 mm

1.10 mm

Cu thickness inside the hole

>25 µm

–

–

Sn thickness inside the hole

–

–

<15 µm

Cu thickness for PCB tracks

35 µm

70 µm

105 µm

–

PCB thickness

1.60 mm

2.00 mm

–

Metallization PCB

chem. tin

–

–

Part Number

Technology

Config.

V

RRM

I

FAV

 / I

D

  @ T

C

V

A

°C

Diode

DMA10IM1200UZ

Standard Diode

Single

1200

10

150

DMA10IM1600UZ

Standard Diode

Single

1600

10

150

DMA10P1200UZ

Standard Diode

Phase Leg

2 × 1200

10

150

DMA10P1600UZ

Standard Diode

Phase Leg

2 × 1200

10

150

Sonic Diode

DHG10IM1800UZ

Fast Recovery Diode

Single

1800

10

100

MOSFET

IXTY1R4N120PHV

Standard MOSFET

Single

1200

1.4

25

Part Number

Technology

Config.

V

RRM

I

FAV

 / I

D

  @ T

C

V

A

°C

Diode

DMA10IM1600PZ

Standard Diode

Single

1600

10

150

DMA30IM1600PZ

Standard Diode

Single

1600

30

140

DNA30E2200PZ

Standard Diode

Single

2200

30

140

DNA30EM2200PZ

Standard Diode

Single

2200

30

140

DMA10P1600PZ

Standard Diode

Phase Leg

2 × 1800

10

150

DMA10P1800PZ

Standard Diode

Phase Leg

2 × 1800

10

150

DAA10EM1800PZ

Avalanche Diode

Single

1800

10

150

DAA10P1800PZ

Avalanche Diode

Phase Leg

2 × 1800

10

150

FRED / HiPerFRED

DSEI12-12AZ

FRED

Single

1200

11

100

DSEP12-12AZ

HiPerFRED

Single

1200

12

135

DSEP12-12BZ

HiPerFRED

Single

1200

15

130

SiC Diodes

LSIC2SD065D10A

Schottky Barrier Diode

Single

650

10

147

LSIC2SD065D20A

Schottky Barrier Diode

Single

650

20

135

LSIC2SD120D10A

Schottky Barrier Diode

Single

1200

10

151

LSIC2SD120D20A

Schottky Barrier Diode

Single

1200

20

150

E2

E3

SimBus F

High Voltage TO-252 (D-Pak) Package

Creepage (min):

pin/pin: ≥ 3.6 mm
pin/Cu back-side: ≥ 2.5 mm

High Voltage TO-263 (D

2

-Pak) Package

Creepage (min):

pin/pin: ≥ 4.2 mm
pin/Cu back-side: ≥ 4.7 mm

X004a
TO-252AA

X011c
TO-263ABHV

Featured Packages

14

15

©2024 Littelfuse, Inc

Littelfuse.com

High Voltage TO-263 (D

2

-Pak) Package

Creepage (min):

pin/pin: ≥ 4.2 mm
pin/Cu back-side: ≥ 4.7 mm

High Voltage TO-268 (D

3

-Pak) Package

Creepage (min):

pin/pin: ≥ 9.4 mm
pin/Cu back-side: ≥ 5.6 mm

Part Number

Technology

Config.

V

RRM

I

FAV

 / I

D

  @ T

C

V

A

°C

Thyristor

CLA5E1200PZ

High Efficiency SCR

Single

1200

5

135

CLA15E1200NPZ

15

120

CLA30E1200NPZ

High Efficiency SCR

Single

1200

30

115

CLB30I1200PZ

30

115

CLA40E1200NPZ

High Efficiency SCR

Single

1200

40

125

CLB40I1200PZ

40

125

CMA20E1600PZ

Standard Thyristor

Single

1600

20

115

CMA30E1600PZ

30

115

CME30E1600PZ

Fast Thyristor

Single

1600

30

80

Triac

CLA30MT1200NPZ

High Efficiency

Triac

1200

15

120

CLA40MT1200NPZ

20

115

Part Number

Technology

Config.

V

CES

/V

DSS

I

C25

/ I

D25

V

CE(sat)

 typ.

 R

DSon

 Max

V

A

V

mΩ

IBGT

IXYT30N65C3H1HV

Gen3™ XPT™ IGBT

Single

650

60

2.7

–

IXYT20N120C3D1HV

1200

36

3.4

–

IXYT40N120A4HV

Gen4™ XPT™ IGBT

Single

1200

150

1.8

–

IXYT55N120A4HV

175

1.5

–

IXYT85N120A4HV

300

1.5

–

IXYT12N250CV1HV

High Voltage XPT™ IGBT

Single

2500

28

3.7

–

IXYT25N250CHV

95

4

–

IXYT30N450HV

High Voltage XPT™ IGBT

Single

4500

60

3.9

–

IXBT16N170AHV

High Voltage BiMOS™

Single

1700

16

6

–

IXBT22N300HV

3000

60

2.7

–

IXBT32N300HV

High Voltage BiMOS™

Single

3000

80

2.8

–

IXBT42N300HV

104

3

–

IXBT16N360HV

High Voltage BiMOS™

Single

3600

48

2.5

–

IXBT20N360HV

70

3.4

–

MOSFET

IXTT140N075L2HV

Linear MOSFET

Single

75

140

–

11

IXTT44N25L2HV

250

44

–

75

IXFT26N100XHV

X–class HiPerFET™

Single

1000

26

–

320

IXFT32N100XHV

32

–

220

IXTT34N65X2HV

X2–class MOSFET

Single

650

34

–

96

IXFT60N65X2HV

X2–class HiPerFET™

Single

650

60

–

52

IXFT80N65X2HV

80

–

38

IXFT30N85XHV

X2–class HiPerFET™

Single

850

30

–

230

IXFT40N85XHV

40

–

145

IXFT50N85XHV

50

–

105

IXFT140N20X3HV

X3–class HiPerFET™

Single

200

140

–

96

IXFT180N20X3HV

180

–

75

IXFT220N20X3HV

220

–

62

IXFT120N25X3HV

X3–class HiPerFET™

Single

250

120

–

120

IXFT150N25X3HV

150

–

90

IXFT170N25X3HV

170

–

74

IXFT100N30X3HV

X3–class HiPerFET™

Single

300

100

–

135

IXFT120N30X3HV

120

–

110

IXFT150N30X3HV

150

–

83

IXTT240N15X4HV

X4–class MOSFET

Single

150

240

–

4.4

IXTT4N150HV

High Voltage MOSFET

Single

1500

4

–

6

IXTT12N150HV

12

–

2

IXTT3N200P3HV

High Voltage MOSFET

Single

2000

3

–

8

IXTT1N250HV

2500

1.5

–

40

IXTT1N300P3HV

High Voltage MOSFET

Single

3000

1

–

50

IXTT2N300P3HV

2

–

21

IXTT02N450HV

High Voltage MOSFET

Single

4500

0.2

–

625

IXTT1N450HV

1

–

80

Part Number

Technology

Config.

V

CES

I

C25

V

CE(sat)

V

A

V

IGBT & BiMOS™

IXA4IF1200UC

XPT

TM

 IGBT

Copack

1200

9

1.8

IXYA20N120C3HV

Fast XPT™ IGBT

Single

1200

40

3.4

IXYA20N120A4HV

Gen4 XPT™ IGBT

Single

1200

80

1.7

IXYA20N120B4HV

76

1.8

IXYA20N120C4HV

Gen4 XPT™ IGBT

Single

1200

68

2.1

IXYA30N120A4HV

106

1.6

IXYA8N250CHV

High Voltage XPT™ IGBT

Single

2500

29

3.4

IXYA12N250CHV

28

3.7

IXBA16N170AHV

High Voltage BiMOS™

Single

1700

16

6

IXBA10N300HV

High Voltage BiMOS™

Single

3000

34

2.8

IXBA14N300HV

38

2.7

Part Number

Technology

Config.

V

DSS

I

D25

R

DSon 

max.

V

A

mΩ

MOSFET

IXFA8N85XHV

X-Class HiPerFET™

Single

850

8

0.85

IXFA14N85XHV

14

0.55

IXFA20N85XHV

20

0.33

IXTA08N100D2HV

Depletion Mode MOSFET

Single

1000

0.8

21

IXTA3N100D2HV

3

6

IXTA3N120HV

High Voltage MOSFET

Single

1200

3

4.5

IXTA3N150HV

High Voltage MOSFET

Single

1500

2

7.3

IXTA4N150HV

4

6

IXTA1N200P3HV

High Voltage MOSFET

Single

2000

1

40

IXTA02N250HV

Single

2500

0.2

450

X011c
TO-263ABHV

X019a
TO-268HV

Featured Packages

16

17

©2024 Littelfuse, Inc

Littelfuse.com

High Voltage TO-268 (D

3

-Pak) Package

Creepage (min):

pin/pin: ≥ 9.4 mm
pin/Cu back-side: ≥ 5.6 mm

ISO247™ Package

Part Number

Technology

V

CES

/V

DSS

I

C25

/I

D25

 (I

C100

)

V

CE(sat)

 typ.

w /Diode

R

DS(on)

 max.

Package

V

A

V

mΩ

IGBT

IXYH8N250CHV

XPT™ IGBT

2500

(8)

4

–

–

TO-247HV

IXYH8N250CV1HV

(8)

4

•

–

IXYH12N250CHV

(12)

4.5

–

–

TO-247HV

IXYH12N250CV1HV

(12)

4.5

•

–

IXYH16N250CV1HV

(16)

4

•

–

TO-247HV

IXYH25N250CHV

(25)

4

–

–

IXYX25N250CV1HV

(25)

4

•

–

PLUS247HV

IXYX40N250CHV

(40)

4

–

–

IXYH30N450HV

4500

(30)

3.9

–

–

TO-247HV

IXYX40N450HV

40

3.9

–

–

PLUS247HV

IXBH10N300HV

BiMOSFET™

3000

34

2.8

–

–

TO-247HV

IXBH14N300HV

38

2.7

–

–

IXBH22N300HV

60

2.7

–

–

TO-247HV

IXBX28N300HV

62

2.7

–

–

PLUS247HV

IXBH32N300HV

(32)

2.8

–

–

TO-247HV

IXBH42N300HV

(42)

2.5

–

–

IXBH16N360HV

3600

48

2.5

–

–

TO-247HV

IXBH20N360HV

70

3.4

–

–

IXBX50N360HV

125

2.9

–

–

PLUS247HV

MOSFET

IXTH02N450HV

MOSFET

4500

0.2

–

–

625

TO-247HV

IXTH1N450HV

1

–

–

80

IXTX1R4N450HV

MOSFET

4500

1.4

–

–

40

PLUS247HV

IXTH1N200P3HV

Polar 3 MOSFET

2000

1

–

–

40

TO-247HV

IXTH3N200P3HV

3

–

–

8

IXTX6N200P3HV

Polar 3 MOSFET

2000

6

–

–

4

PLUS247HV

IXTH05N250P3HV

Polar 3 MOSFET

2500

0.5

–

–

110

TO-247HV

IXTH04N300P3HV

Polar 3 MOSFET

3000

0.4

–

–

190

TO-247HV

IXTH1N300P3HV

1

–

–

50

IXTH2N300P3HV

2

–

–

21

IXTX4N300P3HV

Polar 3 MOSFET

3000

4

–

–

12.5

PLUS247HV

Part Number

Technology

Config.

V

RRM

I

DAV

/I

TAV

 

@ T

C

V

A

°C

Rectifier

DSEI120-12AZ

FRED

Single

1200

109

60

DSEP60-12AZ

HiPerFRED

Single

1200

60

115

DSEP90-12AZ

HiPerFRED

Single

1200

90

105

DSP45-12AZ

Standard Diode

Phase leg

2 × 1200

45

130

DSP45-16AZ

2 × 1600

45

130

DLA100IM1200TZ

Standard Diode

Phase leg

1200

100

105

Thyristor

CLA60MT1200NTZ

High Efficiency

Triac

1200

30

120

CLA100E1200TZ

Standard Thyristor

Single

1200

100

105

CNE60E2200TZ

High Voltage Thyristor

Single

2200

60

80

Part Number

Technology

Config.

V

RRM

I

DAV

/I

TAV

 

@ T

C

V

A

°C

Diode

DSA90C200HR

Schottky Diode

Common Cathode

200

2 × 45

145

DPF30P600HR

HiPerFRED

Phase Leg

2 × 600

30

130

DMA10P1200HR

Standard

Phase Leg

2 × 1200

10

145

DMA10P1600HR

2 × 1600

10

145

DMA30P1600HR

Standard

Phase Leg

2 × 1600

30

105

DMA50P1200HR

2 × 1200

50

105

DCG10P1200HR

SiC Schottky Diode

Phase Leg

2 × 1200

10

80

DCG17P1200HR

17

80

DCG20C1200HR

SiC Schottky Diode

Common Cathode

1200

2 × 10

80

DCG35C1200HR

2 × 17

80

Thyristor

CLA40E1200HR

High Efficiency

Single

1200

40

95

CMA40E1600HR

Standard

Single

1600

40

90

CLA60MT1200NHR

High Efficiency

Triac

1200

30

100

CLA80MT1200NHR

40

100

CMA60MT1600NHR

Standard

Triac

1600

30

90

CMA80MT1600NHR

40

95

High Voltage TO-247HV and PLUS247HV Packages

X019a
TO-268HV

X016c
ISO247™

X14c
TO-247HV

X015c
PLUS247HV

Featured Packages

18

19

©2024 Littelfuse, Inc

Littelfuse.com

Part Number

Technology

Config.

V

CES

/V

DSS

I

C25

/I

D25

V

CE(sat)

 typ.

R

DS(on)

 max.

V

A

V

mΩ

IGBT

IXA20IF1200HR

XPT™ IGBT

Copack

1200

33

1.8

–

IXA30IF1200HR

48

1.8

–

IXA40IF1200HR

63

1.8

–

ITF48IF1200HR

Fast Trench IGBT

Copack

1200

72

2.4

–

MOSFET

IXFJ26N50P3

Polar3™ HiperFET™

Single

500

14

–

0.265

IXFJ80N25X3

X3-Class HiPerFET™

Single

250

44

–

0.018

IXFJ20N85X

850

9.5

–

0.36

IXTJ4N150

High Voltage MOSFET

Single

1500

2.5

–

6

IXTJ6N150

3

–

3.85

ISO247™ Package

Isolated Discrete Packages

ISOPLUS247™ is the Direct Copper Bond (DCB) - isolated version 
of the PLUS247

TM

 package, TO-247 without a mounting hole. The 

design of this patented package is revolutionary: the silicon chip is 
soft soldered onto a DCB substrate instead of the usual copper lead 
frame. The DCB ceramic, which is the same substrate material used 
in high-power modules, provides not only a high isolation capability 
of 2500 V

RMS

 but also unbeatable low thermal resistance compared to 

conventional, externally mounted isolation materials. 

Advantages:

• 

Isolation capability from leads to backside of 2500 V

RMS

 – no 

external isolation foil needed

• 

Thermal resistance from junction to case only slightly higher than 
for non-isolated versions

• 

Increased power and temperature cycling capability

• 

DCB can be patterned like printed circuit boards to allow special 
functions to be realized

While the junction-to-case thermal resistance is higher than that of 
an equivalent non-isolated device, what really matters is the total 
thermal resistance from junction-to-heatsink (R

thJH

). After comparing 

a device in ISOPLUS247™ to its companion in the non-isolated 
package with an external isolation foil, the overall R

th

 was found to be 

lower for the ISOPLUS247™ package.

Due to the matched thermal expansion coefficients of silicon and DCB 
ceramic, mechanical stress to the die and solder caused by power 
and temperature cycling is reduced, improving reliability. Mounting is 
done with clips; this not only saves time but also guarantees constant 
pressure over the lifetime of the assembly. 

Parts in the ISOPLUS247™ housing can be identified by the letter 
“R” in the Littelfuse part number. Potentially, all devices now 
encapsulated in TO-247, TO-264, and PLUS247

™

 housings can be 

molded in the ISOPLUS247™. There are already more than 100 types 
of ISOPLUS247™ available.

Another interesting feature is the capability to pattern the DCB 
substrate like a printed circuit board. Now, additional special 
functions can be realized, e.g., the series connection of single diode 
chips within one package.

ISOPLUS220™

,

 ISOPLUS247™

,

 and ISOPLUS264™

 

are the DCB-based 

substitutes for the corresponding standard packages.

A larger version of this packaging technology is the ISOPLUSi4-
PAC

TM

, which has up to five terminal pins, making it possible to 

create full diode bridges, phase-leg transistor configurations, buck 
and boost converters, and much more within one isolated discrete 
package.

ISOPLUS-DIL

TM

 37.5 mm long and 25 mm wide provides the largest 

mounting area in the ISOPLUS

TM

 family. It is available in 2 pin out 

version: “GWM“ configuration with polar power pins for 300 A

RMS

 

on one side, 12 control pins on the opposite side, and the “GMM“ 
configuration with 12 pins on either side. The package is intended for 
high-current low voltage applications as either a single switch or a 
6-pack. With its high power density and reliability, ISOPLUS-DIL

TM

 is 

recommended for use in automotive designs.

ISOPLUS-SMPD

TM

 is a member of the Littelfuse ISOPLUS

TM

 family and 

provides an increased creepage distance between pins to DCB.

Package Cross-Section

DCB

Leads

Mould

Mould

Copper

Ceramic Copper

Solder

Chip

X016c
ISO247™

Featured Packages

20

21

©2024 Littelfuse, Inc

Littelfuse.com

SMPD-B

MOSFETs

Rectifier

Brake & Boost

Inverter

Line Rectifier

DNA 90U1800LB

Sonic-FRD

DHG 60U1200LB

XPT

TM

 - IGBT

IXA 20RG1200DHGLB
IXA 30RG1200DHGLB
IXA 40RG1200DHGLB

XPT

TM

 - IGBT

IXA 20PG1200DHGLB
IXA 30PG1200DHGLB
IXA 40PG1200DHGLB
ITF 40PF1200DHGTLB

Line Rectifier

DLA 100B1200LB
DLA 100B800LB

Fast Rectifier

DPG 60B600LB 

HiPerFRED

DHG 40B1200LB  Sonic

XPT

TM

 - IGBT

MMIX 1X100N60B3H1
MMIX 1X200N60B3H1
MMIX 1Y82N120C3H1
MMIX 1Y100N120C3H1
IXG 70IF1200LB

SMPD-X

Features and Benefits

• 

Electrical isolation of 2500 V

• 

Low thermal resistance

• 

Increased power & temperature cycling

• 

Saves PCB mounting area

• 

Replaces multiple discretes

• 

Reduces parasitic inductance & capacitance

• 

Reduces EMI

• 

Improved heat spreading

Ausgang

1

G

DC+

S

S

S S G

Ausgang

2

A

Ausgang

1

G

DC+

S

S

S S G

Ausgang

2

B

Ausgang

1

G

DC+

S

S

S S G

Ausgang

2

C

X030a
SMPD-B

X031a
SMPD-X

Part Number

Circuit Diagram/Technology

V

DS

I

D25

R

DS(on)

 max.

Q

g

Package

V

A

A

nC

Single and Copack

MMIX1T600N04T2

A

Trench2

40

600

1.3

590

SMPD-X

MMIX1T550N055T2

A

Trench2

55

550

1.3

595

MMIX1F520N075T2

A

Trench2 HiPerFET™

75

500

1.6

545

MMIX1F420N10T

A

Trench HiPerFET™

100

334

2.6

670

MMIX1F360N15T2

A

Trench2 HiPerFET™

150

235

4.4

715

MMIX1F230N20T

A

Trench HiPerFET™

200

156

8.3

358

MMIX1F180N25T

A

Trench HiPerFET™

250

132

13

364

MMIX1F160N30T

A

Trench HiPerFET™

300

102

20

376

MMIX1F210N30P3

A

Polar3 HiPerFET™

300

108

16

268

MMIX1F132N50P3

A

Polar3 HiPerFET™

500

63

43

267

MMIX1F44N100Q3

A

Q3 HiPerFET™

1000

30

245

264

Phase-Leg

MMIX2F150N20T

B

Trench™ HiPerFET™

200

84

16.5

177

SMPD-X

MMIX2F60N50P3

B

Trench™ HiPerFET™

500

30

110

96

More Information

Mounting and Cooling Solutions for SMPD Packages

This application note discusses various mounting solutions for Surface Mount Power Device (SMPD) packages. 
Mounting instructions are provided for single and multi-device mounting, respectively. Read on to learn more.

Scan to visit now

Featured Packages

22

23

©2024 Littelfuse, Inc

Littelfuse.com

IGBTs

IGBTs

A

B

G

H

C

D

I

J

K

L

M

E

F

X030a
SMPD-B

X031a
SMPD-X

X031b
SMPD-Y

X030a
SMPD-B

X031a
SMPD-X

X032
MiniSMPD

Part Number

Circuit Diagram/Technology

V

ce

I

C25

T

C

 = 25 °C

V

CE(sat)

 typ.

T

C

 = 25 °C

E

off

 typ.

T

J

 = 150 °C (125 °C)

Package

V

A

A

mJ

Single and Copack

MMIX1X200N60B3

A

XPT™

600

223

1.4

3.45

SMPD-X

MMIX1X100N60B3H1

B

XPT™ & Sonic

145

1.5

2.8

MMIX1X200N60B3H1

B

XPT™ & Sonic

600

175

1.4

3.45

SMPD-X

MMIX1X340N65B4

A

XPT™ IGBT Gen4™

450

1.4

2.54

MMIX1Y82N120C3H1

B

XPT™ fast & Sonic

1200

78

2.9

(3.7)

SMPD-X

MMIX1Y100N120C3H1

B

XPT™ fast & Sonic

92

2.9

3.55

MMIX1G120N120A3V1

B

Gen3 IGBT & Sonic

1200

110

1.85

58

SMPD-X

Boost

IXA20RG1200DHGLB

E

XPT™ & Sonic

1200

32

1.8

1.7

SMPD-B

IXA30RG1200DHGLB

E

XPT™ & Sonic

1200

43

1.9

3

SMPD-B

IXA40RG1200DHGLB

E

XPT™ & Sonic

1200

63

1.85

4.1

SMPD-B

Phase-Leg

IXA20PG1200DHGLB

C

XPT™ & Sonic

1200

32

1.8

1.7

SMPD-B

IXA30PG1200DHGLB

C

XPT™ & Sonic

43

1.9

3

IXA40PG1200DHGLB

C

XPT™ & Sonic

1200

63

1.85

4.1

SMPD-B

ITF40PF1200DHGTLB

D

Trench IGBT & Sonic & NTC

56

2.05

2.6

ITF40PG1200DHGLB

C

Trench IGBT & Sonic

56

2.05

2.6

Full-Bridge

MMIX4B22N300

F

IGBT for cap discharge

3000

38

3.1 max

-

SMPD-Y

Part Number

Circuit Diagram/Technology

V

RRM

I

D(AV)M 

@

 

T

C

Package

V

A

°C

Dual

DSA120X150LB

G

Schottky

150

2 × 60

150

SMPD-B

DSA120X200LB

G

Schottky

200

2 × 60

150

SMPD-B

DSA240X200LB

G

Schottky

2 × 120

150

DCG40X1200LB

G

SiC

1200

2 × 14.5

80

SMPD-B

1 Phase Bridge

DPG60B600LB

H

HiPerFRED

600

60

110

SMPD-B

DCG20B650LB

H

SiC

650

21

80

DLA100B800LB

H

Rectifier

800

124

80

SMPD-B

DMA120B800LB

H

Rectifier

130

90

DLA100B1200LB

H

Rectifier

1200

124

80

SMPD-B

DHG40B1200LB

H

Sonic

34

80

3 Phase Bridge

DHG60U1200LB

I

Sonic

1200

62

80

SMPD-B

DMA90U1800LB

I

Rectifier

1800

99

80

Thyristors and Triacs

Part Number

Circuit Diagram/Technology

V

RRM

I

TAV 

@

 

T

C

Package

V

A

°C

Dual

CLA60MU1200LB

2 × J

Triac

1200

2 × 30

100

SMPD-B

CMA50P1600LB

K

Thyristor

2 × 1600

50

90

SMPD-B

MOS-Gated Thyristors

Part Number

V

DM

I

TSM

 1µs

T

C

 = 25°C

I

TSM

 10µs

T

C

 = 25°C

r

T

 typ.

V

T

 Max.

Q

g(on)

 typ.

t

ri

 typ.

T

C

 = 25°C

V

GK

(th) max.

Circuit

Diagram

Package

V

kA

kA

mΩ

V

nC

ns

V

MMIX1H60N150V1

1500

32

11.8

1.2

6

180

100

5

M

SMPD-X

Featured Packages

24

25

©2024 Littelfuse, Inc

Littelfuse.com

MTI...W..GC
MTC...W..GC
Surface Mount Device

MTI...WX...GD 
MTC...X...TGD 
GMM...
Surface Mount Device

X026c
ISOPLUS-DIL

TM

X026d
ISOPLUS-DIL

TM

ISOPLUS-DIL

TM

Part Number

V

DS 

max.

I

D

T

C

 = 25 °C

I

D90

T

C

 = 90 °C

R

DS(on)

typ.

T

J

 = 25 °C

C

iss

 typ.

Q

g

 typ.

R

thJC

V

A

A

mΩ

nF

nC

K/W

FPO

MTI85W100GC

100

110

83

3.2

6.3

90

1.5

Part Number

V

DS 

max.

I

D

T

C

 = 25 °C

I

D90

T

C

 = 90 °C

R

DS(on) 

typ.

T

J

 = 25 °C

C

iss

 typ.

Q

g

 typ.

R

thJC

V

A

A

mΩ

nF

nC

K/W

FPO

MTC120WX75GD

75

160

120

2.2

10.5

178

0.8

MTI200WX75GD

265

200

1.1

10.8

155

0.9

MTI85WX100GD

100

110

83

3.2

6.3

90

1.5

MTI145WX100GD

190

145

1.7

11

155

0.9

GMM3X60-015X2

150

50

38

19

5.8

97

1

Potential Application Block Diagram Exmaple (for i4-PAC

TM

)

3, 4, and 5 leaded packages for various circuit topologies and DCB base plate

• 

Electrical isolation of 2500 V

• 

Low thermal resistance

• 

Increased power and temperature cycling

• 

Saves PCB mounting area

• 

Replaces multiple discretes

• 

Reduces parasitic inductance and capacitance

• 

Reduces EMI

• 

Less weight

Solutions offered by Littelfuse
System implementation options

Rectifier

Power Factor Correction

PWM Bridge

Forward Converter

H-Bridge & Phase-
shift Inverters

FBE 22-06N1 (HiPerFRED)

Synchronous Rectifier

FMM 75-01F

Synchronous Rectifier

IXTF 280N055T
IXTF 250N075T
IXTF 230N085T

IXTF 200N10T

Rectifier

DC Output

AC input

FBO 16-12N (line rectifier)
FBO 40-12N (line rectifier)
FBE 22-06N1 (HiPerFRED)

FUO 22-12N (line rectifier)
FUO 22-16N (line rectifier)
FUO 50-16N (line rectifier)
FUE 30-12N1 (HiPerFRED)

MOSFET™

BiMOSFET™

IXGF 32N170 (IGBT w/o Diode)

IGBT w/o Diode

CLA 40P1200FC

CMA 30P1600FC
CMA 50P1600FC

FMM 75-01F

enlarged creepage

enlarged creepage

Featured Packages

26

27

©2024 Littelfuse, Inc

Littelfuse.com

X024a
ISOPLUS-i4pac(5)

X024c
ISOPLUS-i4pac(3asym)

X024e
ISOPLUS-i4pac(2sym)

X024b
ISOPLUS-i4pac(3sym)

X024d
ISOPLUS-i4pac(5HC)

Part Number

Configuration

Circuit Diagram/Technology

V

DSS

I

D25

T

C

 = 25 °C

I

D90/110

T

C

 = 90 °C (110 °C)

R

DS(on)

T

C

 = 25 °C typ.

Package

V

A

A

mΩ

IXTF200N10T

Single

A

Trench MOSFET

100

90

na

7

ISOPLUS-i4pac (5HC)

IXTF6N200P3

Single

A

Polar3™ High Voltage MOSFET

2000

4

(2.3)

<(4.2)

ISOPLUS-i4pac(3asym)

IXTF2N300P3

A

Polar3™ High Voltage MOSFET

3000

1.6

(0.9)

<(21)

IXTF1N250

A

High Voltage MOSFET

2500

1

na

<(40)

IXTF1R4N450

Single

A

High Voltage MOSFET

4500

1.4

na

<(40)

ISOPLUS-i4pac(3asym)

IXTF02N450

A

High Voltage MOSFET

0.2

na

<(625)

IXTF1N450

A

High Voltage MOSFET

0.9

na

<(80)

FMM75-01F

Phase leg

B

HiPerFET

100

75

50

18

ISOPLUS-i4pac(5)

FMM60-02TF

Phase leg

B

Trench HiPerFET

200

33

na

32

ISOPLUS-i4pac(5)

FMM50-025TF

B

Trench HiPerFET

250

30

na

<60

MXB12R600DPHFC

Boost

C

X2-Class Power MOSFET

600

18

12.5

160

Part Number

Configuration

Circuit Diagram/Technology

V

CES

I

D25

T

C

 = 25 °C

I

D90/110

T

C

 = 90 °C (110 °C)

V

CE(sat) 

typ

T

C

 = 25 °C typ.

Package

V

A

A

V

IXYF30N170CV ¹

Single

F

High voltage XPT™ IGBT

1700

36

(20)

3.5

ISOPLUS-i4pac (3asym)

IXGF32N170

E

High voltage IGBT

44

(19)

2.7

IXGF20N250

Single

E

High voltage IGBT

2500

23

14

<3.1

ISOPLUS-i4pac (3asym)

IXGF25N250

E

High voltage IGBT

30

(15)

<2.9

IXYF16N250CV 

1

Single

F

High voltage XPT™ IGBT

2500

26

(14)

3.3

ISOPLUS-i4pac (3asym)

IXBF22N300

Single

F

BiMOSFET™

3000

38

22

2.2

ISOPLUS-i4pac (3asym)

IXBF32N300

Single

F

BiMOSFET™

3000

40

22

2.8

ISOPLUS-i4pac (3asym)

IXBF42N300

Single

F

BiMOSFET™

3000

60

(24)

2.5

ISOPLUS-i4pac (3asym)

IXBF55N300

F

BiMOSFET™

86

(34)

2.7

IXYF30N450

Single

E

High voltage XPT™ IGBT

4500

23

(17)

3.2

ISOPLUS-i4pac (3asym)

IXYF40N450

E

High voltage XPT™ IGBT

60

(32)

3.2

MOSFETs

IGBTs

1 

Not for new design

M

N

A

B

C

D

E

F

G

H

I

J

K

L

Part Number

Configuration

Circuit diagram/Technology

Voltage

I

D(AV)M

T

C

 = 90°C

Package

V

A

CS20-22MOF1

Single

M

Thyristor

2200

18

ISOPLUS-i4pac (3asym)

DNA30E2200FE

High voltage

N

Rectifier

2200

30

ISOPLUS-i4pac(2sym)

CS20-25MO1F

M

Thyristor

2500

18

ISOPLUS-i4pac (3asym)

CLA40P1200FC

Phase leg

L

Thyristor

2 × 1200

40

ISOPLUS-i4pac(5)

DSEE55-24N1F

H

HiPerFRED

55

ISOPLUS-i4pac(3sym)

CMA30P1600FC

Phase leg

L

Thyristor

2 × 1600

30

ISOPLUS-i4pac(5)

CMA50P1600FC

L

Thyristor

50

DHH55-36N1F

Phase leg

H

Sonic-FRD

2 × 1800

50

ISOPLUS-i4pac(3sym)

FBE22-06N1

1-Phase bridge

J

HiPerFRED

600

20

ISOPLUS-i4pac(5)

FBO16-12N

1-Phase bridge

J

Rectifier

1200

22

ISOPLUS-i4pac(5)

FBO40-12N

J

Rectifier

40

FUO22-12N

3-Phase bridge

K

Rectifier

1200

27

ISOPLUS-i4pac(5)

FUE30-12N1

K

HiPerFRED

30

FUO22-16N

3-Phase bridge

K

Rectifier

1600

27

ISOPLUS-i4pac(5)

FUO50-16N

K

Rectifier

50

Featured Packages

28

29

©2024 Littelfuse, Inc

Littelfuse.com

IGBT Characteristics

XPT

TM

 Gen3 Planar

XPT

TM

 Gen3 Planar

XPT

TM

  Gen4 Trench

XPT

TM

 Gen5Trench

Sub-family

IXA*

IXX*

IXY*

IXX* (650 V), IXY* (1200 V)

IXY*

Switching class

–

B3

C3

A3

B3

C3

A4

B4

C4

A5

B5

C5

Speed

Medium Medium

High

Low

Medium

High

Low

Medium

High

Low

Medium

High

Surge Currnet Capability

Medium

Medium

Medium

Medium (650 V), High (1200 V)

High

Square RBSOA

Yes

Yes

Yes

Yes (650 V), No (1200 V)

Yes

Short Circuit Rated

Yes

Yes

Yes

Yes (650 V)

Yes (650 V), No (1200 V)

No

No (900 V, 1200 V)

Voltage Class

1200 V

600 V

650 V, 900 V, 1200 V

650 V, 1200 V

650 V

IGBT Characteristics

XPT

TM

 Gen3 Planar

XPT

TM

 Gen3 Planar

Sub-family

IXY*

IXB*

Switching class

–

–

Speed

Medium

Medium

Surge Currnet Capability

Medium

Medium

Square RBSOA

No

No

Short Circuit Rated

No

No

Voltage Class

1700–4500 V

1600–3600 V

IGBT Technologies and their Distinctive Characteristics

600 –1200 V

IGBT Technologies and their Distinctive Characteristics

1600–4500 V

  

Switching

Frequency

High Voltage

1600 - 4500V

BiMOSFET

1600-3000V

XPT

TM

 Planar

600V 650V 900V 1200V

XPT

TM

 Trench

1200V

XPT Trench

650V

Breakdown Voltage

500 kHz

100 kHz

40 kHz

10 kHz

5 kHz

1 kHz

100

300

600

900

1200

1700

2500

4000

5000

IGBT Product Families

Xtreme Light Punch Through (XPT™) Planar IGBTs

This is the extremely rugged technology platform of IGBTs, which are ideal for critical applications that require low conduction and low 
switching losses with a 10 μs short circuit withstand capability. Both discrete as single or co-packaged with ultrafast soft recovery Sonic diodes 
is available. Littelfuse XPT™ IGBTs have lower saturation voltage V

CE(sat)

 and low total switching energy (E

on

 + E

off

). A large portfolio of module-

packed Planar XPT™s is available for applications such as UPS, Motor Drive, and solar inverters.

Xtreme Light Punch Through (X2PT™) Planar IGBTs

This is the second generation of XPT™ IGBTs. Its features are 10 µs short circuit capability, 175 °C ma × junction temperature, further 
reduced V

CE(sat)

, and lower turn-off losses (E

off

), resulting in competitive performance that is comparable to the latest trench devices at 

reduced R

th

. Thus, they are ideally suited for Motor Drive inverters.

Xtreme Light Punch Through (XPT™) Trench IGBTs

This is the latest development from Littelfuse, starting at 650 V. This range features not only a low V

CE(sat)

, but also extremely low switching 

losses, making the platform attractive for fast switching applications whilst retaining good SOA ratings and a positive temperature coefficient. 
Both, discrete single or co-packaged with ultrafast soft recovery sonic diodes is available. Littelfuse XPT™ IGBTs have industry leading 
efficiency at medium to high switching frequency.

Very  High Voltage  (2500 V– 4000 V)  IGBTs

Littelfuse offers a unique portfolio of discrete 2500 V, 3000 V, and 4000 V VHV IGBTs with collector current ratings spanning from 2 A to 
75 A (T

c

 = 110 ˚C). The voltage and current ratings of these devices, coupled with simplified MOS gate-control, allow the system designer 

to greatly reduce the complexity of many high voltage switching designs. These IGBTs enable the use of a single device in systems where 
circuits previously used multiple, cascaded, lower-voltage switches.

BiMOSFET™ IGBTs

IXYS BiMOSFET™s are devices that combine the strengths of MOSFETs and IGBTs. BiMOSFET™s feature a monolithic intrinsic diode that can 
reduce die count in many applications.

The Insulated Gate Bipolar Transistor (IGBT) is a key component used in major industrial and automotive applications today. Littelfuse is one 
of the largest portfolios of IGBTs in terms of package, current, and voltage. Adapting to the different needs of various applications, Littelfuse 
offers optimized IGBTs for conduction and switching losses. These IGBTs come in A, B, and C switching classes. The portfolio includes both 
single IGBTs and co-pack IGBTs having anti-parallel diode inside the package. The A class is optimized for low frequency applications and has 
considerably less conduction losses. Class B and C IGBTs are optimized for medium and high-switching frequency applications.

IGBTs from Littelfuse offer low thermal resistance Rth(j-c) which helps simplify and enhance the overall thermal efficiency of the system. The 
industryleading low gate charge QG requirement drastically reduces the gate driver requirements of the IGBTs, respectively.

The following table summarizes the IGBT portfolio.

IGBT Technology

IGBT Discrete

31

Littelfuse.com

30

©2024 Littelfuse, Inc

IXX...

IXY...

IXX...D1/H1

IXY...D1/H1

X017a

TO-3P

X016a

ISOPLUS247™

X017c

TO-3PFP

X019a

TO-268HV

X020a 

TO-264

X027a

SOT-227B (miniBLOC)

X005a

TO-220AB

X011b

TO-263AB

X014a

TO-247AD

X015a

PLUS247

600V XPT™ Planar IGBTs

XPT™ = Xtreme Light Punch Through, short-circuit rated IGBTs

650V XPT™ Planar IGBTs

XPT™ = Xtreme Light Punch Through, short-circuit rated IGBTs

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110 °C

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 150 °C

E

off

 typ.

T

J

 = 150 °C

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

B3 Class (5–30 kHz Switching)

IXXQ30N60B3M

600

33

19

1.85

180

0.7

1.66

–

–

–

90

TO-3PFP

IXXH30N60B3

60

30

1.85

180

0.7

0.55

–

–

–

270

TO-247AD

IXXH30N60B3D1

60

30

1.85

180

0.7

0.55

•

30

0.9

270

TO-247AD

IXXA50N60B3

120

50

1.8

190

1.2

0.25

–

–

–

600

TO-263AB

IXXH50N60B3

120

50

1.8

190

1.2

0.25

–

–

–

600

TO-247AD

IXXH50N60B3D1

120

50

1.8

190

1.2

0.25

•

30

0.9

600

TO-247AD

IXXP50N60B3

120

50

1.8

190

1.2

0.25

–

–

–

600

TO-220AB

IXXR100N60B3H1

145

68

1.8

200

2.8

0.31

•

–

0.62

400

ISOPLUS247™

IXXH75N60B3

160

75

1.85

170

2.2

0.2

–

–

–

750

TO-247AD

IXXH75N60B3D1

160

75

1.85

170

2.2

0,200 •

30

0.9

750

TO-247AD

IXXN100N60B3H1

170

100 (90°C)

1.8

200

2.8

0.25

•

50

0.42

500 SOT-227B (miniBLOC)

IXXK100N60B3H1

200

100 (100°C)

1.8

200

2.8

0.18

•

65

0.3

695

TO-64

IXXN200N60B3H1

200

98

1.7

215

3.45

0.16

•

30

0.7

780 SOT-227B (miniBLOC)

IXXX100N60B3H1

200

100 (100°C)

1.8

200

2.8

0.18

•

65

0.3

695

PLUS247

IXXH100N60B3

220

100

1.8

200

2.8

0.18

–

–

–

830

TO-247AD

IXXN200N60B3

280

160

1.7

215

3.45

0.16

–

–

–

940 SOT-227B (miniBLOC)

IXXK200N60B3

380

200

1.7

215

3.45

0.092 –

–

–

1630

TO-64

IXXX200N60B3

380

200

1.7

215

3.45

0.092 –

–

–

1630

PLUS247

IXXK300N60B3

550

300

1.6

200

3.7

0.065 –

–

–

2300

TO-64

IXXX300N60B3

550

300

1.6

200

3.7

0.065 –

–

–

2300

PLUS247

C3 Class (20– 60 kHz Switching)

IXXH30N60C3

600

60

30

2.2

32

0.4

0.55

–

–

–

270

TO-247AD

IXXH30N60C3D1

60

30

2.2

78

0.4

0.55

•

30

0.9

270

TO-247AD

IXXH50N60C3

100

50

2.3

90

0.48

0.25

–

–

–

600

TO-247AD

IXXH50N60C3D1

100

50

2.3

90

0.48

0.25

•

30

0.9

600

TO-247AD

IXXH75N60C3

150

75

2.3

80

1.07

0.2

–

–

–

750

TO-247AD

IXXH75N60C3D1

150

75

2.3

80

1.07

0.2

•

30

0.9

750

TO-247AD

IXXK100N60C3H1

170

100 (90°C)

2.2

115

1.4

0.18

•

65

0.3

695

TO-64

IXXX100N60C3H1

170

100 (90°C)

2.2

115

1.4

0.18

•

65

0.3

695

PLUS247

IXXH100N60C3

190

100

2.2

115

1.4

0.18

–

–

–

830

TO-247AD

IXXN200N60C3H1

200

98

2.1

90

2.1

0.16

•

30

0.7

780 SOT-227B (miniBLOC)

IXXK200N60C3

340

200

2.1

90

2.1

0.092 –

–

1630

TO-64

IXXX200N60C3

340

200

2.1

90

2.1

0.092 –

–

–

1630

PLUS247

IXXK300N60C3

510

300

2

90

2.35

0.065 –

–

–

2300

TO-64

IXXX300N60C3

510

300

2

90

2.35

0.065 –

–

–

2300

PLUS247

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110 °C

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 150 °C

E

off

 typ.

T

J

 = 150 °C

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

A3 Class (up to 5 kHz Switching)

IXYN100N65A3

650

170

100

1.8

160

2.4

0.25

–

–

–

600 SOT-227B (miniBLOC)

IXYH100N65A3

240

100

1.8

225

3.7

0.18

–

–

–

470

TO-247AD

IXYN300N65A3

470

300

1.6

175

7.3

0.1

–

–

–

1500 SOT-227B (miniBLOC)

IXYK300N65A3

600

300

1.6

175

7.3

0.065 –

–

–

2300

TO-264

IXYX300N65A3

600

300

1.6

175

7.3

0.065 –

–

–

2300

PLUS247

B3 Class (10 –30 kHz Switching)

IXYA20N65B3

650

58

20

2.1

147

0.76

0.65

–

–

–

230

TO-263AB

IXYH20N65B3

58

20

2.1

147

0.76

0.65

–

–

–

230

TO-247AD

IXYP20N65B3

58

20

2.1

147

0.76

0.65

–

–

–

230

TO-220AB

IXYH40N65B3

86

40

2

174

1.15

0.5

–

–

–

300

TO-247AD

IXYH40N65B3D1

86

40

2

174

1.15

0.5

•

50

0.6

300

TO-247AD

IXYH100N65B3

225

100

1.85

160

2.16

0.18

–

–

–

830

TO-247AD

IXYH120N65B3

340

120

1.9

196

2.2

0.11

–

–

–

–

TO-247AD

IXYK200N65B3

410

200

1.7

230

5.6

0.096 –

–

–

–

TO-264

IXYX200N65B3

410

200

1.7

230

5.6

0.096 –

–

–

–

PLUS247

C3 Class (20 – 60 kHz Switching)

IXYP10N65C3

650

30

10

2.5

38

0.15

0.94

–

–

–

160

TO-220AB

IXYP15N65C3

38

15

2.5

42

0.24

0.75

–

–

–

200

TO-220AB

IXYA20N65C3

50

20

2.5

36

0.4

0.65

–

–

–

230

TO-263AB

IXYP10N65C3

30

10

2.5

38

0.15

0.94

–

–

–

160

TO-220AB

IXYA15N65C3D1

38

15

2.5

42

0.24

0.75

•

23

1.85

200

TO-263AB

IXYP15N65C3

38

15

2.5

42

0.24

0.75

–

–

–

200

TO-220AB

IXYP15N65C3D1

38

15

2.5

42

0.24

0.75

•

23

1.85

200

TO-220AB

IXYA20N65C3

50

20

2.5

36

0.4

0.65

–

–

–

230

TO-263AB

IXYA20N65C3D1

50

20

2.5

36

0.4

0.65

•

18

1.85

200

TO-263AB

IXYH20N65C3

50

20

2.5

36

0.4

0.65

–

–

–

230

TO-247AD

IXYP20N65C3D1

50

20

2.5

36

0.4

0.65

•

18

1.85

200

TO-220AB

IXYH30N65C3H1

60

30

2.7

30

0.41

0.55

•

29

0.8

270

TO-247AD

IXYH30N65C3

60

30

2.7

30

0.41

0.55

–

–

–

270

TO-247AD

IXYT30N65C3H1HV

60

30

2.7

30

0.41

0.55

•

29

0.8

270

TO-268HV

IXYP30N65C3

60

30

2.7

30

0.41

0.55

–

–

–

270

TO-220AB

IXYQ40N65C3D1

80

40

2.35

30

0.53

0.5

•

50

0.6

300

TO-3P

IXYH40N65C3

80

40

2.35

30

0.53

0.5

–

–

–

300

TO-247AD

IXYH40N65C3H1

80

40

2.35

80

0.46

0.5

•

40

0.6

300

TO-247AD

IXYH50N65C3H1

130

50

2.1

42

0.56

0.25

•

40

0.6

600

TO-247AD

IXYP50N65C3

132

50

2.1

32

0.7

0.25

–

–

–

600

TO-220AB

IXYH50N65C3

132

50

2.1

32

0.7

0.25

–

–

–

600

TO-247AD

IXYA50N65C3

132

50

2.1

32

0.7

0.25

–

–

–

600

TO-263AB

IXYN100N65C3H1

160

90

2.3

66

1.15

0.25

•

50

0.42

600 SOT-227B (miniBLOC)

IXYH75N65C3H1

170

75

2.3

58

1.3

0.2

•

62

0.45

750

TO-247AD

IXYH75N65C3

175

75

2.3

64

1.3

0.2

–

–

–

750

TO-247AD

IXYX100N65C3D1

200

100

2.3

66

1.15

0.18

•

67

0.36

830

PLUS247

IXYH100N65C3

200

100

2.3

66

1.15

0.18

–

–

–

830

TO-247AD

IXYK100N65C3D1

200

100

2.3

66

1.15

0.18

•

67

0.36

830

TO-264

IXYH120N65C3

260

120

2.8

60

0.7

0.11

–

–

–

–

TO-247AD

IGBT Discrete

33

Littelfuse.com

32

©2024 Littelfuse, Inc

IXX...

IXY...

IXX...D1/H1

IXY...D1/H1

X015a

PLUS247

X014a

TO-247AD

X016a

ISOPLUS247™

X019a

TO-268HV

X020a 

TO-264

X027a

SOT-227B (miniBLOC)

X005a

TO-220AB

X007a

TO-220ABFP

X014a

TO-247AD

X011c

TO-263ABHV

650 V XPT™ Trench IGBTs

XPT™ = Xtreme Light Punch Through, short-circuit rated IGBTs

1200 V XPT™ Trench IGBTs

XPT™ = Xtreme Light Punch Through, short-circuit rated IGBTs

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110 °C

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 150 °C

E

off

 typ.

T

J

 = 150 °C

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

A4 Class (up to 5 kHz Switching)

IXXN200N65A4

650

440

200

1.8

190

8

0.12

–

–

–

1250 SOT-227B (miniBLOC)

A5 Class (up to 5 kHz Switching)

IXYP60N65A5 

650

134

60

1.35

240

2.5

0.38

–

–

–

395

TO-220AB

IXYH90N65A5 

220

90

1.35

360

5

0.23

–

–

–

650

TO-247AD

IXYH120N65A5 

290

120

1.35

290

4.7

0.18

–

–

–

830

TO-247AD

B4 Class (5–30 kHz Switching)

IXXP12N65B4

650

38

12

1.95

110

0.38

0.94

–

–

–

160

TO-220AB

IXXP12N65B4D1

38

12

1.95

110

0.38

0.94

•

11

2.3

160

TO-220AB

IXXH30N65B4

70

30

2

60

1.07

0.65

–

–

–

230

TO-247AD

IXXH40N65B4

115

40

2

116

1.3

0.33

–

–

–

455

TO-247AD

IXXH60N65B4

120

60

2.2

88

1.8

0.33

–

–

–

536

TO-247AD

IXXH60N65B4H1

120

60

2.2

88

1.8

0.33

•

47

0.6

536

TO-247AD

IXXH40N65B4H1

123

40

2

73

1.4

0.33

•

40

0.6

455

TO-247AD

IXXR110N65B4H1

150

70

2.2

105

1.4

0.33

•

48

0.7

455

ISOPLUS247™

IXXH80N65B4

160

80

2.1

94

2.7

0.24

–

–

–

625

TO-247AD

IXXH80N65B4H1

160

80

2.1

102

3.1

0.24

•

62

0.45

625

TO-247AD

IXXN110N65B4H1

230

110

2.1

110

2.16

0.2

•

70

0.42

750 SOT-227B (miniBLOC)

IXXH110N65B4

250

110

2.1

110

2.16

0.17

–

–

–

880

TO-247AD

IXXK110N65B4H1

250

110

2.1

110

2.16

0.17

•

78

0.38

880

TO-264

IXXX110N65B4H1

250

110

2.1

110

2.16

0.17

•

78

0.38

880

PLUS247

IXXK160N65B4

310

160

1.8

160

2.36

0.16

–

–

–

940

TO-264

IXXX160N65B4

310

160

1.8

160

2.36

0.16

–

–

–

940

PLUS247

IXXH140N65B4

340

140

1.9

100

3.9

0.125 –

–

–

1200

TO-247AD

IXXX140N65B4H1

350

140

1.9

100

3.9

0.125 •

72

0.24

1200

PLUS247

IXXK200N65B4

480

200

1.7

120

5

0.092 –

–

–

1630

TO-264

IXXX200N65B4

480

200

1.7

120

2.54

0.092 –

–

–

1630

PLUS247

IXXN340N65B4

520

340 (90°C)

1.7

110

2.54

0.1

–

–

–

1500 SOT-227B (miniBLOC)

C4 Class (20 – 60 kHz Switching)

IXXH60N65C4

650

125

60

2.4

54

1.5

0.33

–

–

–

536

TO-247AD

IXXN110N65C4H1

210

110

2.35

40

0.9

0.2

•

70

0.42

750 SOT-227B (miniBLOC)

IXXH110N65C4

235

110

2.35

40

0.9

0.17

–

–

–

880

TO-247AD

IXXK160N65C4

290

160

2.1

57

1.3

0.16

–

–

–

940

TO-264

IXXX160N65C4

290

160

2.1

57

1.3

0.16

–

–

–

940

PLUS247

IXXH140N65C4

320

160

2.3

63

2.5

0.125 –

–

–

1200

TO-247AD

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110° C

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 125 °C

E

off

 typ.

T

J

 = 120 °C

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

A4 Class (up to 5 kHz Switching)

IXYA20N120A4HV

1200

80

20

1.9

286

4.85

0.4

–

–

–

375

TO-263ABHV

IXYP20N120A4

80

20

1.9

286

4.85

0.4

–

–

–

375

TO-220AB

IXYA30N120A4HV

106

30

1.9

270

5.6

0.3

–

–

–

500

TO-263ABHV

IXYH30N120A4

106

30

1.9

270

5.6

0.3

–

–

–

500

TO-247AD

IXYP30N120A4

106

30

1.9

270

5.6

0.3

–

–

–

500

TO-220AB

IXYH40N120A4

150

40

1.8

365

8.3

0.22

–

–

–

680

TO-247AD

IXYT40N120A4HV

150

40

1.8

365

8.3

0.22

–

–

–

680

TO-268HV

IXYT55N120A4HV

175

55

1.8

270

8.8

0.23

–

–

–

650

TO-268HV

IXYH55N120A4

175

55

1.8

270

8.8

0.23

–

–

–

650

TO-247AD

IXYT85N120A4HV

300

85

1.8

280

13.7

0.13

–

–

–

1150

TO-268HV

IXYH85N120A4

300

85

1.8

280

13.7

0.13

–

–

–

1150

TO-247AD

IXYK110N120A4

375

140

1.8

320

20

0.1

–

–

–

1360

TO-264

IXYN110N120A4

375

140

1.8

320

20

0.14

–

–

–

830

SOT0227B miniBLOC

IXYX110N120A4

375

140

1.8

320

20

0.1

–

–

–

1360

PLUS247

IXYK140N120A4

480

140

1.7

320

20

0.1

–

–

–

1500

TO-264

IXYN140N120A4

480

140

1.7

320

20

0.14

–

–

–

1070 SOT0227B miniBLOC

IXYX140N120A4

480

140

1.7

320

20

0.1

–

–

–

1500

PLUS247

B4 Class (5–30 kHz Switching)

IXYA20N120B4HV

1200

76

20

2.1

170

2.7

0.4

–

–

–

375

TO-263ABHV

IXYP20N120B4

76

20

2.1

170

2.7

0.4

–

–

–

375

TO-220AB

IXYH30N120B4

100

30

2.1

190

4

0.3

–

–

–

500

TO-247AD

IXYH40N120B4

136

40

2.1

190

4.4

0.22

–

–

–

680

TO-247AD

IXYK110N120B4

340

110

2.1

210

6.45

0.11

–

–

–

1360

TO-264

IXYX110N120B4

340

110

2.1

210

6.45

0.11

–

–

–

1360

PLUS247

IXYH40N120B4H1

112

40

2.1

190

4.4

0.25

•

32

0.35

600

TO-247AD

IXYH55N120B4H1

138

55

2.1

340

4.5

0.23

•

32

0.35

650

TO-247AD

IXYN110N120B4H1

218

110

2.1

210

6.45

0.18

•

74

0.41

830

SOT227B miniBLOC

C4 Class (20–50 kHz Switching)

IXYA20N120C4HV

1200

68

20

2.5

86

1.6

0.4

–

–

–

375

TO-263ABHV

IXYP20N120C4

68

20

2.5

86

1.6

0.4

–

–

–

375

TO-220AB

IXYH30N120C4

94

30

2.4

100

2.7

0.3

–

–

–

500

TO-247AD

IXYH40N120C4

120

40

2.5

80

2.65

0.22

–

–

–

680

TO-247AD

IXYH55N120C4

140

55

2.5

123

2.5

0.23

–

–

–

650

TO-247AD

IXYH85N120C4

160

85

2.5

112

3.3

0.13

–

–

–

1150

TO-247AD

IXYK110N120C4

310

110

2.4

90

3.2

0.11

–

–

–

1360

TO-264

IXYN110N120C4

220

110

2.4

90

3.2

0.17

–

–

–

830

SOT0227B miniBLOC

IXYX110N120C4

310

110

2.4

110

3.2

0.11

–

–

–

1360

PLUS247

IXYH40N120C4H1

110

40

2.5

80

2.65

0.22

•

32

0.35

680

TO-247AD

IXYH55N120C4H1

126

55

2.5

123

2.5

0.35

•

37

0.35

650

TO-247AD

IXYN85N120C4H1

150

85

2.5

110

3.3

0.25

•

74

0.41

600

SOT227B miniBLOC

IXYK85N120C4H1

220

85

2.5

110

3.3

0.13

•

140

0.16

1150

TO-264

IXYN110N120C4H1

210

110

2.4

90

3.2

0.18

•

74

0.41

830

SOT227B miniBLOC

–

IGBT Discrete

34

35

©2024 Littelfuse, Inc

Littelfuse.com

IXX...

IXY...

IXX...D1/H1

IXY...D1/H1

X024c

ISOPLUS

i4-PAC™

X004

TO-252AA

X005a

TO-220AB

X011b

TO-263AB

X011c

TO-263ABHV

X014a

TO-247AD

X014c

TO-247HV

X015a

PLUS247

X015c

PLUS247 HV

X016a

ISOPLUS247™

X019

TO-268AA

X019a

TO-268HV

X020a

TO-264

X021a

PLUS264

X022e

ISOPLUS264™

X027a

SOT-227B (miniBLOC)

XPT™ Planar IGBT

XPT™ = Xtreme Light Punch Through

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110 °C

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 150 °C

E

off

 typ.

T

J

 = 150 °C

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

1700V XPT™ Planar IGBTs

IXYH10N170C

1700

36

10

4.1

94

0.9

0.53

–

–

–

280

TO-247AD

IXYH10N170CV1

36

10

4.1

94

0.9

0.53

•

22

0.7

280

TO-247AD

IXYF30N170CV1

36

20

4

134

3.5

0.65

•

20

0.86

230

ISOPLUS i4-PAC™

IXYH16N170C

40

16

3.8

140

1.95

0.48

–

–

–

310

TO-247AD

IXYH16N170CV1

40

16

3.8

140

1.95

0.48

•

22

0.7

310

TO-247AD

IXYH24N170C

58

24

4

140

2.66

0.3

–

–

–

500

TO-247AD

IXYH24N170CV1

58

24

4

140

2.66

0.3

•

28

0.55

500

TO-247AD

IXYN30N170CV1

80

30

4

134

3.5

0.22

•

33

0.43

680 SOT-227B (miniBLOC)

IXYL50N170CV1

90

46

3.7

160

8.2

0.26

•

26

0.83

580

ISOPLUS264™

IXYH30N170C

100

30

4

134

3.5

0.16

–

–

–

937

TO-247AD

IXYK30N170CV1

100

30

4

134

3.5

0.16

•

38

0.36

937

To-264

IXYX30N170CV1

100

30

4

134

3.5

0.16

•

38

0.36

937

PLUS247

IXYN50N170CV1

120

50

3.7

160

8.2

0.17

•

42

0.42

880 SOT-227B (miniBLOC)

IXYX50N170C

178

50

3.7

160

8.2

0.1

–

–

–

1500

PLUS247

2500V XPT™ Planar IGBTs

IXYF16N250CV1

2500

26

14

4

236

4.4

0.83

•

9

1.5

180

ISOPLUS i4-PAC™

IXYA12N250CHV

28

12

4.5

138

1.95

0.48

–

–

–

310

TO-263ABHV

IXYH12N250CHV

28

12

4.5

138

1.95

0.48

–

–

–

310

TO-247HV

IXYH12N250CV1HV

28

12

4.5

138

1.95

0.48

•

14

0.8

310

TO-247HV

IXYT12N250CV1HV

28

12

4.5

138

1.95

0.48

•

14

0.8

310

TO-268HV

IXYA8N250CHV

29

8

4

128

1.2

0.53

–

–

–

280

TO-263ABHV

IXYH8N250CHV

29

8

4

128

1.2

0.53

–

–

–

280

TO-247HV

IXYH8N250CV1HV

29

8

4

128

1.2

0.53

•

14

0.8

280

TO-247HV

IXYH16N250CV1HV

38

16

4

236

4.4

0.3

•

14

0.8

500

TO-247HV

IXYL40N250CV1

80

40

4

250

11.5

0.26

•

23

0.83

577

ISOPLUS264™

IXYH25N250CHV

95

25

4

350

10.5

0.16

–

–

–

937

TO-247HV

IXYT25N250CHV

95

25

4

350

10.5

0.16

–

–

–

937

TO-268HV

IXYX25N250CV1

95

25

4

350

10.5

0.16

•

30

0.32

937

PLUS247

IXYX25N250CV1HV

95

25

4

350

10.5

0.16

•

30

0.32

937

PLUS247 HV

IXYX40N250CHV

154

40

4

250

11.5

0.1

–

–

–

1500

PLUS247 HV

900/1200 V XPT™ Planar IGBTs

Part Number

V

CES

I

C25

T

C

 = 25 °C

I

C110

T

C

 = 110 °C (90 °C)

V

CE(sat)

T

C

 = 25 °C

t

fi

 typ.

T

J

 = 125 °C

(150 °C)

E

off

 typ.

T

J

 = 125 °C

(150 °C)

R

thJC

Diode

I

F110

 Diode

T

C

 = 110 °C

R

thJC

 max. 

Diode

P

C

Package

V

A

A

V

ns 

mJ 

K/W

A

K/W

W

C3 Class (20–50 kHz Switching)

IXYA8N90C3D1

900

20

8

2.5

163

0.22

1.2

•

12

2.5

125

TO-263AB

IXYP8N90C3

20

8

2.5

163

0.22

1.2

–

–

–

125

TO-220AB

IXYP8N90C3D1

20

8

2.5

163

0.22

1.2

•

12

2.5

125

TO-220AB

IXYY8N90C3

20

8

2.5

163

0.22

1.2

–

–

–

125

TO-252AA

IXYH24N90C3

44

24

2.7

130

0.55

0.62

–

–

–

240

TO-247AD

IXYH24N90C3D1

44

(24)

2.7

130

0.55

0.62

•

15

1.6

200

TO-247AD

IXYH40N90C3D1

90

40

2.5

150

1.2

0.25

•

25

0.9

500

TO-247AD

IXYH40N90C3

105

40

2.5

150

1.2

0.25

–

–

–

600

TO-247AD

IXYN80N90C3H1

115

(70)

2.7

(98)

(2.5)

0.25

•

42

0.42

500 SOT-227B (miniBLOC)

IXYH60N90C3

140

60

2.7

(165)

(2.15)

0.2

–

–

–

750

TO-247AD

IXYH80N90C3

165

80

2.7

(98)

(2.5)

0.18

–

–

–

830

TO-247AD

IXYT80N90C3

165

80

2.7

(98)

(2.5)

0.18

–

–

–

830

TO-268AA

IXYK140N90C3

310

140

2.7

(125)

(5)

0.09

–

–

–

1630

TO-264

IXYX140N90C3

310

140

2.7

(125)

(5)

0.09

–

–

–

1630

PLUS247

B3 Class (5–30 kHz Switching)

IXYH40N120B3D1

1200

86

40

2.9

206

2.05

0.26

•

25

0.9

480

TO-247AD

IXYH40N120B3

96

40

2.9

206

2.05

0.26

–

–

–

577

TO-247AD

IXYN100N120B3H1

165

76

2.6

(260)

(10.1)

0.18

•

42

0.42

690 SOT-227B (miniBLOC)

IXYK100N120B3

225

100

2.6

(260)

(10.1)

0.13

–

–

–

1150

TO-264

IXYX100N120B3

225

100

2.6

(260)

(10.1)

0.13

–

–

–

1150

PLUS247

IXYK120N120B3

320

120

2.2

(406)

(27.9)

0.1

–

–

–

1500

TO-264

IXYX120N120B3

320

120

2.2

(407)

(27.9)

0.1

–

–

–

1500

PLUS247

C3 Class (20–50 kHz Switching)

IXYH20N120C3D1

1200

36

17

3.4

(105)

(0.7)

0.54

•

23

0.9

230

TO-247AD

IXYT20N120C3D1HV

36

17

3.4

(105)

(0.7)

0.54

•

23

0.9

230

TO-268HV

IXYA20N120C3HV

40

20

3.4

(105)

(0.7)

0.54

–

–

–

278

TO-263ABHV

IXYH20N120C3

40

20

3.4

(105)

(0.7)

0.54

–

–

–

278

TO-247AD

IXYP20N120C3

40

20

3.4

(105)

(0.7)

0.54

–

–

–

278

TO-220AB

IXYR50N120C3D1

56

(32)

4

(60)

(1.4)

0.43

•

25

0.9

290

ISOPLUS247™

IXYH30N120C3D1

66

30

4

88

0.9

0.3

•

25

0.9

416

TO-247AD

IXYH30N120C3

75

30

3.3

(140)

(1.6)

0.3

–

–

–

500

TO-247AD

IXYP30N120C3

75

30

3.3

(140)

(1.6)

0.3

–

–

–

500

TO-220AB

IXYH40N120C3D1

80

(40)

3.5

(143)

(2.1)

0.26

•

25

0.9

480

TO-247AD

IXYH40N120C3

90

40

3.5

(143)

(2.1)

0.26

–

–

–

577

TO-247AD

IXYH50N120C3D1

90

50**

4

(60)

(1.4)

0.2

•

25

0.9

625

TO-247AD

IXYH50N120C3

100

50

3.5

60

1.4

0.2

–

–

–

750

TO-247AD

IXYR100N120C3

104

58

3.5

125

3.55

0.31

–

–

–

484

ISOPLUS247™

IXYN82N120C3H1

105

46

3.2

95

3.7

0.25

•

42

0.42

500 SOT-227B (miniBLOC)

IXYN82N120C3

120

66

3.2

95

3.7

0.25

–

–

–

600 SOT-227B (miniBLOC)

IXYN100N120C3H1

134

62

3.5

125

3.55

0.18

•

42

0.42

690 SOT-227B (miniBLOC)

IXYN100N120C3

152

86

3.5

125

3.55

0.18

–

–

–

830 SOT-227B (miniBLOC)

IXYB82N120C3H1

164

82

3.2

95

3.7

0.12

•

42

0.35

1040

ISOPLUS i4-PAC™

IXYK100N120C3

188

100

3.5

125

3.55

0.13

–

–

–

–

TO-264

IXYX100N120C3

188

100

3.5

125

3.55

0.13

–

–

–

–

PLUS247

IXYH82N120C3

200

82

3.2

95

3.7

0.12

–

–

–

–

TO-247AD

IXYK120N120C3

240

120

3.2

(120)

(7.2)

0.1

–

–

–

1500

TO-264

IXYX120N120C3

240

120

3.2

(120)

(7.2)

0.1

–

–

–

1500

PLUS247

IXYN120N120C3

240

120

3.2

(120)

(7.2)

0.13

–

–

–

1200 SOT-227B (miniBLOC)

**

 T

c

 = 100 °C

IGBT Discrete