Spansion-Product-Guide-html.html

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

process node

110nm

90nm

65nm

48nm

41nm

32nm

architecture

Floating

Gate

MirrorBit

Floating

Gate

MirrorBit

Eclipse

™

Floating Gate

NAND

Floating Gate

NAND

Floating Gate

NAND

features

product nomenclature

1.8V, burst mode, SRW

de-multiplex ADP interface

WS-P

WS-R

1.8V, burst mode, SRW,

multiplex ADM interface

NS-P

VS-R

1.8V, burst mode, SRW,

AADM interface

XS-R

1.8V, standard NOR,

de-multiplex ADP interface

AS-J

2.5V, burst mode,

de-multiplex ADP interface

CD-J

3.0V, burst mode,

de-multiplex ADP interface

CL-J

3.0V, SRW,

de-multiplex ADP interface

JL-J

3.0V, page mode, SRW,

de-multiplex ADP interface

PL-J

3.0V, page mode,

de-multiplex ADP interface

GL-N

GL-P

GL-S

3.0V, standard NOR,

de-multiplex ADP interface

AL-J

3.0V, Serial Pheripheral

Interface (SPI)

FL1-K

FL2-K

FL-P

FL-S

1.8V Serial Peripheral

Interface (SPI)

FS-S

1.8V, ONFI 1.0, x8/x16

MS-1

MS-2

3.0V, ONFI 1.0, x8/x16

ML-1

ML-2

Bus Types – ADP: Address Data Parallel, ADM: Address Data Multiplexed, AADM: Address high, Address low, Data Multiplexed, SPI: Serial Peripheral Interface
1) SRW: Simultaneous Read/Write

Spansion Flash Memory Guide

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

Spansion GL Family

32Mb – 2Gb, 3V NOR FLASH MEMORY

Spansion GL family is optimized for the voltage, density, cost-per-bit, reliability,
performance and scalability needs of a wide variety of embedded applications.
With densities from 32Mb to 2Gb, each device requires only a single 3.0V power
supply for read and write functions and is entirely command set compatible with
the JEDEC Flash standards. The Spansion GL family supports Spansion’s Universal
Footprint, which provides one footprint across all densities, product families and
process technologies allowing manufacturers to design a single platform and
simply scale Flash memory capacity up or down, depending on the features and
functionality of the target end system.

Spansion FL Family

4Mb – 1Gb, 3V SERIAL FLASH MEMORY

Spansion FL Serial Flash family offers the highest density SPI flash and supports
lower pin counts, enables lower overall system cost and offers fast read/write
performance. These benefits coupled with a flexible sector architecture makes the
Spansion FL family an ideal solution for a variety of industrial, consumer electronics
and automotive applications, with performance that matches or in some cases,
exceeds conventional parallel I/O NOR flash memory. The Spansion FL-S SPI family
offers increased levels of read/write performance and functionality with an enhanced
feature set, delivering an effective data throughput of up to 80MBytes/sec while
maintaining backward compatibility with legacy solutions, enabling easy migrations.

key applications

Automotive navigation

Communications infrastructure

equipment

Gaming

Industrial control

Handsets

Set-top box

Consumer

packages

universal footprint

RoHS-compliant lead-free available

56-pin TSOP package

56-ball FBGA*

64-ball fortified BGA package

Wafer and die form

key applications

Digital TV

DVD players/recorders

Set-top box

High-end printers

DSL modems

Optical disk drives

Wireless LANs

Automotive Infotainment/Clusters

packages

Industry standard, SOIC,

USON/WSON and BGA

Wafer and die form

* For GL-S
**For GL064S

VOLTAGE

3.0V

DENSITIES

32Mb – 2Gb

INTERFACE

Page mode

BUS

x8 or x16, x16 only*

SECTOR TYPE

Uniform

ACCESS TIME

70** – 130ns

PAGE MODE
ACCESS MODE

15-30ns,
8 word/16 word*

TEMPERATURE
RANGE

0°C to +70°C
-40°C to +85°C
-40°C to +105°C*

SECURITY

Advanced sector
protection

key device features

VOLTAGE

2.7-3.6V Vcc (All)
1.65-3.6V V

(FL-S)

DENSITIES

4Mb – 1Gb

INTERFACE

x1, x2, x4

SECTOR TYPE

Uniform 4KB, Uniform
64KB, Uniform 256KB
(128Mb – 1Gb FL-S)

PERFORMANCE

Up to 133MHz (Single
I/O)
Up to 104MHz (Dual/
Quad I/O)
Up to 80MHz (DDR)

TEMPERATURE
RANGE

-40°C to +85°C
-40°C to +105°C

SECURITY

Advanced sector
protection, OTP region,
Security registers
with OTP lock down,
software/hardware
protection modes,
Unique ID

key device features

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

Spansion FS Family

128Mb – 256Mb, 1.8V SERIAL FLASH MEMORY

Spansion FS Serial Flash memory offers a reduced pin count for lower system cost
while providing optimal read/write performance for a variety of networking, mobile,
consumer electronics and industrial applications. With read speeds up to 133 MHz
clock speed in Single/Dual/Quad I/O mode and 80 MHz for double data rate
(DDR) modes, the FS family delivers up to 80 MBytes/sec of read throughput. In
addition, industry leading Programming performance of up to 1.08 MBytes/s speeds
manufacturing throughput and lowers programming costs dramatically.

key applications

Network Storage

FPGAs

Smart Meters

Automotive

Printers

Medical

Digital Cameras

Feature phones

Bluetooth

packages

Industry standard SOIC,

WSON and BGA

Wafer and die form

VOLTAGE

1.70 – 2.0V

DENSITIES

128Mb – 256Mb

INTERFACE

x1, x2, x4

SECTOR TYPE

8x4kB and 1x32kB
at top/bottom with
all remaining sectors
64kB; option of uniform
256KB or uniform 64kB

TEMPERATURE
RANGE

-40°C to +85°C
-40°C to +105°C*

SECURITY

Advance sector
protection, OTP region,
Security registers
with OTP lock down,
software/hardware
protection modes,
Unique ID

key device features

Spansion CD/CL Families

32Mb – 64Mb, 2.5/3.0V BURST MODE NOR FLASH MEMORY

Spansion’s burst NOR CD and CL families are optimized to withstand harsh
under-the-hood automotive environments while maintaining high reliability and
high performance. In addition to burst frequency support of up to 75 MHz, the
Spansion CD and CL families offer a wide x32 data bus and extended temperature
support. These features and a high-reliability technology node can help enable the
next generation of infotainment and navigation/telematic devices.

key applications

Automotive under-the-hood

Automotive in-cabin

packages

80-pin PQFP

80-ball Fortified BGA

Wafer and die form

VOLTAGE

2.5V (CD) and
3.0V (CL)

DENSITIES

16Mb – 32Mb

BUS

x32

SECTOR TYPE

Top/Bottom boot

BURST
FREQUENCY

Up to 75 MHz

TEMPERATURE
RANGE

-40°C to +125°C,
-40°C to +145°C
(on die/wafer
products)

SECURITY

OTP region, advanced
sector protection

key device features

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

VOLTAGE

3.0V

DENSITIES

8Mb – 16Mb

32Mb – 64Mb

32Mb – 128Mb

BUS

x8/x16

x16

SECTOR TYPE

Top/Bottom/
Uniform boot

Top/Bottom boot

Dual boot

ACCESS TIME

55 – 90ns

55 – 70ns

PAGE MODE
ACCESS TIME

N/A

25 – 30ns, (8 word)

BANKS

2 – 4

TEMPERATURE
RANGE

-40°C to +85°C,
-40°C to +125°C

-40°C to +85°C

-25°C to +85°C,
-40°C to +85°C

SECURITY

OTP region

PACKAGES

48-ball
64-ball BGA
48-pin TSOP
Wafer and die form

48-pin TSOP
48-ball BGA
Wafer and die form

48-ball
56-ball
64-ball
80-ball BGA
56-pin TSOP

Spansion AL/JL/PL Families

8Mb – 128Mb, 3.0V NOR FLASH MEMORY

Spansion offers a broad line of 3V parallel NOR devices on a high-reliability
technology node with an array of features to meet the needs of a wide variety of
embedded applications. The 3.0V Spansion AL family devices are standard mode
Flash with low density offerings and extended temperature support. The 3.0V
Spansion JL family devices offer two and four bank memory configurations to allow
performance gains via simultaneous read-write operations. The 3.0V Spansion PL
family devices not only provide the benefits of a four-bank configuration, but also
support page mode operations which further increases data throughput to improve
system performance.

key device features

Spansion AS Family

8Mb – 16Mb, 1.8V NOR FLASH MEMORY

The 1.8V Spansion AS family is optimized for performance and reliability. In addition
to a fast initial access time of 70ns, the AS family offers low power consumption
and a fast program speed which is ideal for a wide variety of embedded applications.
Based on a proven 110nm Floating Gate process technology, the reliability of the AS
family also makes it suitable for use in automotive-grade applications.

key applications

Handheld navigation

Bluetooth

Personal media players

packages

48-pin TSOP

48-ball BGA (0.8mm pitch and

0.5mm pitch)

Wafer and die form

VOLTAGE

1.8V

DENSITIES

8Mb – 16Mb

INTERFACE

Standard NOR

BUS

x8/x16

SECTOR TYPE

Top/Bottom boot

ACCESS TIME

70ns

TEMPERATURE
RANGE

-40°C to +85°C

SECURITY

Secured Silicon
Region, 256-byte OTP
sector for permanent,
secure identification

key device features

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

Spansion WS/NS/VS/XS Families

64Mb – 512Mb, 1.8V, BURST MODE, SIMULTANEOUS
READ/WRITE, NOR FLASH MEMORY

Spansion WS/NS/VS/XS Flash memory families offer high density, high
reliability and performance-enhancing features making them the ideal solution for
multimedia rich mobile applications. The product lines feature 1.8V, multi-bank,
fast access with burst mode, and simultaneous read/write operation with product
density scaling from 64Mb to 512Mb. The Spansion WS/NS/VS/XS product
families support burst speeds up to 108MHz as well as page mode interface which
can improve read transfer rates by up to 50%, compared to standard asynchronous
Flash products.

key applications

Entry level,

mainstream and
high-end handsets

High-performance

mobile applications

packages

44-ball

64-ball

84-ball BGA

Wafer and die form

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

key device features

VOLTAGE

1.8V

DENSITIES

64Mb – 512Mb

INTERFACE

WS: (ADP), NS/VS: (ADM), XS: (AADM)

BUS

x16

SECTOR TYPE

Top/Bottom/Dual boot

INITIAL
ACCESS TIME

80ns

PAGE MODE
ACCESS TIME

15ns (WS only)

BURST
FREQUENCY

Up to 108MHz

TEMPERATURE
RANGE

-25°C to +85°C, -40°C to +85°C
on select products

SECURITY

Secured Silicon Region, 256-word OTP
sector for permanent, secure identification

Spansion ML/MS Family

1 – 8Gb NAND 3V/1.8V NAND FLASH MEMORY

Spansion NAND products complement the parallel and serial NOR offerings from
Spansion for embedded applications. Spansion applies its stringent process for
qualification, testing, extended temperature support and packaging to its line of SLC
NAND products. Spansion’s high performance and high reliability SLC NAND product
portfolio will be available in 1 Gb, 2 Gb, 4 Gb and 8Gb (DDP) densities. These products
will work with systems that support 1-bit ECC and 4-bit ECC. All of Spansion’s NAND
products will be backed by Spansion’s world-class customer support and commitment for
longevity of supply. 4Xnm (1-bit ECC) 1/2/4Gb 3V x8 TSOP/BGA and 32nm (4-bit ECC)
1/4/Gb 3V x8 TSOP/BGA are in production currently. Also, a few 1.8V configurations
are available in X16 and X8 BGA package. 4Xnm 1Gb/2Gb/4Gb are also available with
AEC-Q100 and GT-Grade @ 85°C as well as high temperature of 105°C (1Gb @105°C
requires 2-bit ECC correction instead of 1-bit ECC). Other configurations are coming soon.

key applications

Digital TVs

Set-top Boxes

Network memory modules

Industrial meters

Industrial sensors

Game Consoles

Printers

Digital Camera

Automotive infotainment

GPS Navigation

Toys

packages

Industry Standard 48-Pin TSOP,

63-Ball BGA

VOLTAGE

3V/1.8V

TECHNOLOGY

4x/3x nm SLC FG NAND

DENSITIES

1 – 8Gb

INTERFACE

ONFI 1.0

BUS

x8/x16

CYCLING

100K (typ.)

PERFORMANCE

Cache Programming,
Multi-plane commands
support, OTP, and
25uS Random access,
25 ns Seq. access,
200-300uS tprog,
2-3.5ms tbers

TEMPERATURE
RANGE

-40°C to +85°C,
-40°C to +105°C

PACKAGES

48-Pin TSOP
63-Ball BGA
67-Ball BGA

SOFTWARE
SUPPORT

Complimentary Drivers
and Spansion FFS

key device features

Different parts have varied performance, please refer to

page 12 for exact details on a particular part.

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

Spansion’s Universal Footprint

CONSISTENT PACKAGES AND PINOUTS SPEEDS TIME-TO-MARKET AND REDUCES DESIGN

Spansion’s Universal Footprint with consistent packaging and pinouts across product families, process
technologies, and densities allows design engineers to swap devices at any point in the design or product life
cycle without affecting board design.

Designers can manage differentiated end product models based on a single platform design thanks to
Spansion’s Universal Footprint. The platform design concept, used by makers of DVD players, industrial
equipment, and network routers, saves design time and minimizes cost. Coupled with our cost-effective system
software and drivers, you have a complete Flash solution to manage the changing design needs of your products.

leveraging the spansion
universal footprint

design simplicity

One footprint across densities, product families,

and process technologies

Scaleable, seamless

time-to-market

Minimize board rework and re-spin Price

Interoperable between high performance and

price-performance products to optimize BOM

supply chain

Service multiple platforms with one footprint

Minimize reliance on one product by qualifying

multiple products in the same footprint

48-PIN AND 56-PIN TSOP

For extreme design flexibility
8Mb – 1Gb

13mm

9mm

11mm

48-pin TSOP

56-pin TSOP

48-BALL
FINE PITCH BGA

For small form factor
for low densities
8Mb – 64Mb

13mm

9mm

11mm

48-pin TSOP

56-pin TSOP

64-BALL FORTIFIED BGA

For highest flexibility
11x13mm, 9x9mm
16Mb – 2Gb

13mm

9mm

11mm

48-pin TSOP

56-pin TSOP

56-BALL BGA

For small form factor
for high densities
128Mb – 512Mb

13mm

9mm

11mm

48-pin TSOP

56-pin TSOP

150 MIL SOIC AND 6x5 WSON

8-PIN SOIC
150 MIL

4Mb – 32Mb

8-PAD WSON

6x5 mm

16Mb – 128Mb

208 MIL SOIC AND 6x8 WSON

Single footprint,
widest density range

8-PIN SOIC
208 MIL

4Mb – 128Mb

8-PAD WSON

6x8 mm

32Mb – 256Mb

16-PIN SOIC
300 MIL

32Mb – 1Gb

SPI NOR

24-BALL BGA
6x4 BALL
ARRAY

16Mb – 512Mb

24-BALL BGA
5x5 BALL
ARRAY

16Mb – 512Mb

PARALLEL NOR

NAND

48-PIN TSOP

1Gb – 8Gb

63-BALL BGA

1Gb – 8Gb

67-BALL BGA

1Gb

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

(S) Spansion Ordering Part Number Construction

single-die products

Generic OPN

Ordering Options

Additional Ordering Options

Varies for each generic OPN (characters
1-9). Meaning is defined in each datasheet.

Prefix

Series

Family

G Density

Tech

Speed

Package

Temp

Model Number

Pack

type

Temperature Grade

Product Series

25 = Serial Peripheral Interface (SPI) Flash memory
29 = Sector Erase NOR Flash memory
34 = Floating Gate NAND
70 = Dual Die Flash Package

Density

001 - 512 = 1 Mb-512 Mb
204 - 216 = 4 Mb-16 Mb

116 - 164 = 16 Mb-64 Mb

Packaging Type

Prefix

S = Spansion

Package Type (Family)

Package Material Set
(Varies by Package Type)

Process Technology

Flash Interface and
Simultaneous Read-write

Standard
Page
Burst (ADP)
Burst (ADM)
Burst (AADM)
Serial (SPI)
Automotive

Burst (Demux)
NAND
ADP = Address data parallel
ADM = Address data mux
AADM = Address –

address data mux

srw

N/V

no srw

A
G

V
N

= Commercial (0° to +70°C)
= Extended Commercial (0° to +85°C)
= Wireless (-25° to +85°C)
= Industrial (-40° to +85°C)
= Automotive in-cabin (-40° to +105°C)
= Extended (-40° to +125°C)

2
3

= Tray
= Tube
= 7" Tape & Reel
= 13" Tape & Reel

Core Voltage

L
D

= 3-volt VCC
= 2.5-volt VCC
= 1.8-volt VCC

P
R
S

= 110nm, Floating Gate Technology
= 90nm, Floating Gate Technology
= 110nm, MirrorBit Technology
= 90nm, MirrorBit Technology
= 65nm, MirrorBit Technology
= 65nm, MirrorBit Technology (Eclipse)
= NAND Revision 1 (4X nm)
= NAND Revision 2 (3X nm)

C
D

E
F

S
T

= BGA - 0.5mm pitch
= BGA - 0.8mm pitch
= CSOP
= Fortified BGA, 9mm x 9mm
= Super CSP
= Fortified BGA, 11mm x 13mm
= SOIC/SOP
= SON
= PLCC
= PQFP
= SSOP
= TSOP
= BGA - 0.8mm pitch

= Leaded
= Lead (Pb)-Free
= Low Halogen Lead (Pb)-Free

* For FL2-K
** For FL1-K

Speed Option

Asynchronous (no CLK input)

“Speed Option” represents random access time (ns). If greater than

100ns, use the two leftmost digits.

Synchronous (CLK input)

“Speed Option” represents clock frequency (MHz). First character

represents the data rate, combined with the speed in 100s of MHz:

SDR, <100 MHz

SDR, >=100 MHz

DDR, <100 MHz

Second character represents the speed between 0 and 99 MHz:

0-4
5-9
10-14

15-19
20-24
25-29

30-34
35-39
40-44

45-49
50-54
55-59

60-64
65-69
70-74

75-79
80-84
85-89

90-94
95-99
100-108

A
B
C

E
F

G
H

R
S
T

Bus Width (NAND)

00 = x8 NAND, single die 04 = x16 NAND, single die

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

3.0V Parallel Flash Memory

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

org

sector features

2 Gb

•

S70GL02GS

110 (20), 120 (30)

64-Ball FBGA

-40° to +85°C

2.7-3.6

2.7-3.6,

1.65-Vcc

x16

H, L

Sectors: 2048x128KB; 32-byte Page Mode Read; WP#

Pin; Secured Silicon Region; Advanced Sector Protection,

VersatileI/O, 512-byte write buffer

2 Gb

•

S70GL02GP

110 (25)

64-Ball FBGA

0° to +85°C,

-40° to +85°C

3.0-3.6

x8/x16

H, L

Sectors: 2048x128KB; WP#/ACC Pin; Secured Silicon Region;

Advanced Sector Protection, VersatileI/O, 32-word write buffer

1 Gb

•

S29GL01GS

100 (15), 110 (20)

56-Pin TSOP, 64-Ball FBGA,

KGW

-40° to +85°C,

-40° to +105°C

2.7-3.6

2.7-3.6,

1.65-Vcc

x16

H, L

Sectors: 1024x128KB; 32-byte Page Mode Read; WP#

Pin; Secured Silicon Region; Advanced Sector Protection,

VersatileI/O, 512-byte write buffer

1 Gb

•

S29GL01GP

110 (25), 120 (25),

130 (25)

56-Pin TSOP, 64-Ball FBGA,

KGD, KTW

0° to +85°C,

-40° to +85°C

3.0-3.6,

2.7-3.6

3.0-3.6,

2.7-3.6,

1.65-Vcc

x8/x16

H, L

Sectors: 1024x128KB; WP#/ACC Pin; Secured Silicon Region;

Advanced Sector Protection, VersatileI/O, 32-word write

buffer

512 Mb

•

S29GL512S

100 (15), 110 (20)

56-Pin TSOP, 56-Ball FBGA,

64-Ball FBGA, KGW

-40° to +85°C

-40° to +105°C

2.7-3.6

2.7-3.6,

1.65-Vcc

x16

H, L

Sectors: 512x128KB; 32-byte Page Mode Read; WP# Pin;

Secured Silicon Region; Advanced Sector Protection,

VersatileI/O, 512-byte write buffer

512 Mb

•

S29GL512P

100 (25), 110 (25),

120 (25)

56-Pin TSOP, 64-Ball FBGA,

KTD, KTW

0° to +85°C,

-40° to +85°C

3.0-3.6,

2.7-3.6

3.0-3.6,

2.7-3.6,

1.65-Vcc

x8/x16

H, L

Sectors: 512x128KB; WP#/ACC Pin; Secured Silicon Region;

Advanced Sector Protection, VersatileI/O, 32-word write

buffer

256 Mb

•

S29GL256S

90 (15), 100 (20)

56-Pin TSOP, 56-Ball FBGA,

64-Ball FBGA, KGW

-40° to +85°C,

-40° to +105°C

2.7-3.6

2.7-3.6,

1.65-Vcc

x16

H, L

Sectors: 256x128KB; 32-byte Page Mode Read; WP#

Pin; Secured Silicon Region; Advanced Sector Protection,

VersatileI/O, 512-byte write buffer

256 Mb

•

S29GL256P

90 (25), 100 (25),

110 (25)

56-Pin TSOP, 64-Ball FBGA,

KGD, KGW

0° to +85°C,

-40° to +85°C

3.0-3.6,

2.7-3.6

3.0-3.6,

2.7-3.6,

1.65-Vcc

x8/x16

H, L

Sectors: 256x128KB; WP#/ACC pin; Secured Silicon Region;

Advanced Sector Protection, VersatileI/O; 32-word write

buffer

128 Mb

•

S29GL128S

90 (15), 100 (20)

56-Pin TSOP, 56-Ball FBGA,

64-Ball FBGA, KGW

-40° to +85°C,

-40° to +105°C

2.7-3.6

2.7-3.6,

1.65-Vcc

x16

H, L

Sectors: 128x128KB; 32-byte Page Mode Read; WP#

Pin; Secured Silicon Region; Advanced Sector Protection,

VersatileI/O, 512-byte write buffer

128 Mb

•

S29GL128P

90 (25), 100 (25),

110 (25)

56-Pin TSOP, 64-Ball FBGA,

KGD, KGW

0° to +85°C,

-40° to +85°C

3.0-3.6,

2.7-3.6

3.0-3.6,

2.7-3.6,

1.65-Vcc

x8/x16

H, L

Sectors: 128x128KB; WP#/ACC pin; Secured Silicon Region;

Advanced Sector Protection, VersatileI/O, 32-word write

buffer

128 Mb

•

S29PL127J

60 (25), 65 (25),

70 (30)

56-Pin TSOP, 80-Ball FBGA

-40° to +85°C,

-25° to +85°C

2.7-3.6

2.7-3.6,

1.65-1.95

x16

Banks: 16/48/48/16Mb; WP#/ACC pin; Secured Silicon

Region; Advanced Sector Protection

64 Mb

•

S29GL064S

70 (15), 80 (25)

48-Pin TSOP, 56-Pin TSOP,

48-Ball FBGA, 64-Ball FBGA

0 to +85C,

-40 to +85C

2.7-3.6

2.7-3.6,

1.65-3.6

x16,

x8/x16

T, B, U

Sectors: 8x8KB, 127x64KB or 128x64KB; WP#/ACC Pin

or separate WP# and ACC pins; Secured Silicon Region;

VersatileI/O; 256-word write buffer

64 Mb

•

S29GL064N

90 (25), 110 (30)

48-Pin TSOP, 56-Pin TSOP,

48-Ball FBGA, 64-Ball FBGA,

KGD, KGW

-40° to +85°C

2.7-3.6

2.7-3.6,

1.65-3.6

x16,

x8/x16

T, B, U

Sectors: 8x8KB, 127x64KB or 128x64KB; WP#/ACC Pin

or separate WP# and ACC pins; Secured Silicon Region;

VersatileI/O; 16-word write buffer

64 Mb

•

S29PL064J

55 (20), 60 (25),

65 (25), 70 (30)

48-Ball FBGA, 56-Ball FBGA

-40° to +85°C,

-25° to +85°C

2.7-3.6

x16

Banks: 8/24/24/8Mb; WP#/ACC pin; Secured Silicon

Region; Advanced Sector Protection

64 Mb

•

S29JL064J

55, 60, 70

48-Pin TSOP, 48-Ball FBGA, KGW

-40° to +85°C

2.7-3.6

x8/x16

Banks: 8/24/24/8Mb; WP#/ACC pin; Secured Silicon Region

32 Mb

•

S29GL032N

90 (25), 110 (30)

48-Pin TSOP, 56-pin TSOP,

48-Ball FBGA, 64-Ball FBGA,

KGW

-40° to +85°C

2.7-3.6

2.7-3.6,

1.65-3.6

x8/x16

T, B, U

Sectors: 8x8KB, 63x64KB or 64x64KB; WP#/ACC Pin;

Secured Silicon Region; VersatileI/O; 16-word write buffer

32 Mb

•

S29PL032J

55 (20), 60(25),

65 (25), 70 (30)

48-Ball FBGA, 56-Ball FBGA

-40° to +85°C,

-25° to +85°C

2.7-3.6

x16

Banks: 4/12/12/4Mb; WP#/ACC pin; Secured Silicon Region;

Advanced Sector Protection

32 Mb

•

S29JL032J

60, 70

48-Pin TSOP, 48-Ball FBGA

-40° to +85°C

2.7-3.6

x8/x16

T, B

Banks: 4/12/12/4Mb, 4/28, 8/24, 16/16; WP#/ACC pin;

Secured Silicon Region

32 Mb

•

S29CL032J

75, 66, 56, 40MHz

80-Pin PQFP, 80-Ball BGA

-40° to +85°C,

-40° to +125°C,

-40° to +145°C

3.0-3.6

1.65-3.6

x32

Banks: 8/24Mb or 24/8Mb; WP#, ACC pins, Secured Silicon

Region; Advanced Sector Protection, Versatile I/O

16 Mb

S29AL016J

55, 70

48-Pin TSOP, 48-Ball FBGA,

64-Ball FBGA, 56-Pin SSOP,

KGD, KGW

-40° to +85°C,

-40° to +125°C

3.0-3.6,

2.7-3.6

x8/x16

T, B

Sectors: 1x16KB,2x8KB,1x32KB,31x64KB

16 Mb

•

S29CL016J

66, 56, 40MHz

80-Pin PQFP, 80-Ball BGA,

KGD

-40° to +85°C,

-40° to +125°C,

-40° to +145°C

3.0-3.6

1.65-3.6

x32

Banks: 4/12Mb or 12/4Mb; WP#, ACC pins, Secured Silicon

Region; Advanced Sector Protection, Versatile I/O

8 Mb

S29AL008J

55, 70

48-Pin TSOP, 48-Ball FBGA,

56-Pin SSOP, KGD, KGW

-40° to +85°C,

-40° to +125°C

3.0-3.6,

2.7-3.6

x8/x16

T, B

Sectors: 1x16KB, 2x8KB, 1x32KB, 15x64KB

Sector:

T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

i/o

(v)

org

sector features

1 Gb

S70FL01GS

133MHz (Single I/O),

104MHz (Multi I/O),

80MHz (DDR)

16-Pin SO

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Dual Die stack; Sectors: uniform 256KB; H/W & S/W write

protect; OTP sector

512 Mb

S25FL512S

133MHz (Single I/O),

104MHz (Multi I/O),

80MHz (DDR)

16-Pin SO, 24-ball BGA

(6x8 mm)

-40

to +85

-40

to +105

2.7-3.6

1.65-3.6

x1, x2,

Sectors: uniform 256KB; H/W & S/W write protect; OTP sector

256 Mb

S25FS256S

133MHz (Single I/O,

Multi I/O), 80MHz

(DDR)

16-pin SO, 8-contact

WSON (6x8mm),

24-ball BGA (6x8mm)

-40

to +85

-40

to +105

1.7-2.0

x1, x2,

Sectors: uniform 256KB or uniform 64KB with eight 4KB

sub-sectors and one 32KB sub-sector top/bottom, all remaining

sectors 64KB ; H/W & S/W write protect; OTP sector

256 Mb

S25FL256S

133MHz (Single I/O),

104MHz (Multi I/O),

80MHz (DDR)

16-Pin SO, 8-contact

WSON (6x8 mm), 24-ball

BGA (6x8 mm)

-40

to +85

-40

to +105

2.7-3.6

1.65-3.6

x1, x2,

Sectors: uniform 256KB or uniform 64KB with 32 top/bottom

4KB sub-sectors; H/W & S/W write protect; OTP sector

256 Mb

S70FL256P

104MHz (Single I/O),

80MHz (Multi I/O)

16-Pin SO, 24-ball BGA

(6x8 mm)

-40

to +85

2.7-3.6

x1, x2,

Sectors: uniform 256KB or uniform 64KB with 32 top/bottom

4KB sub-sectors; H/W & S/W write protect; OTP sector; ACC pin

128 Mb

S25FS128S

133MHz (Single I/O,

Multi I/O),

80MHz (DDR)

8-pin SO 208mil, 8-contact

WSON (6x5mm), 24-ball

BGA (6x8mm)

-40

to +85

-40

to +105

1.7-2.0

x1, x2,

Sectors: uniform 256KB or uniform 64KB with eight 4KB

sub-sectors and one 32KB sub-sector top/bottom, all remaining

sectors 64KB ; H/W & S/W write protect; OTP sector

128 Mb

S25FL127S

108MHz (Single I/O,

Multi I/O)

16-Pin SO

8-pin SO 208mil

8-contact WSON (6x5mm)

24-ball BGA (6x8mm)

-40

to +85

-40

to +105

2.7-3.6

(for Vcc)

x1, x2,

(for

ORG)

(for

sector)

Sectors: uniform 256KB or uniform 64KB with 16 top/bottom

4KB sub-sectors, all remaining sectors 64KB; H/W & S/W write

protect; OTP sectors

128 Mb

S25FL128S

133MHz (Single I/O),

104MHz (Multi I/O),

80MHz (DDR)1

16-Pin SO, 8-contact

WSON (6x8 mm),

24-ball BGA (6x8 mm)

-40

to +85

-40

to +105

2.7-3.6

1.65-3.6

x1, x2,

Sectors: uniform 256KB or uniform 64KB with 32 top/bottom

4KB sub-sectors; H/W & S/W write protect; OTP sector

128 Mb

S25FL129P

104MHz (Single I/O),

80MHz (Multi I/O)

16-Pin SO, 8-contact

WSON (6x8 mm),

24-ball BGA (6x8 mm)

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 256KB or uniform 64KB with 32 top/bottom

4KB sub-sectors; H/W & S/W write protect; OTP sector; ACC pin

128 Mb

S25FL128P

104MHz (Single I/O)

16-Pin SO, 8-contact

WSON (6x8 mm)

-40

to +85

2.7-3.6

Sectors: uniform 256KB or uniform 64KB; H/W & S/W write

protect; x8 Parallel Program Mode; ACC pin

64 Mb

S25FL064P

104MHz (Single I/O),

80MHz (Multi I/O)

16-Pin SO, 8-contact

WSON (6x8 mm), 24-ball

BGA (6x8 mm), KGW

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 64KB with 32 top/bottom 4KB sub-sectors,

H/W & S/W write protect; OTP sector; ACC pin

64 Mb

S25FL164K

108MHz (Multi I/O)

8-Pin SO 208mil, 16-Pin SO,

8-contact WSON

(5x6 mm), 24-ball BGA

(6x8 mm), KGW

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect; OTP sector; Program/erase suspend/resume

64 Mb

S25FL064K*

80MHz (Single I/O),

80MHz (Multi I/O)

8-Pin SO 208mil, 16-Pin SO

-40

to +85

2.7-3.6

x1, x2,

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect; OTP sector; Program/erase suspend/resume.

32 Mb

S25FL032P

104MHz (Single I/O),

80MHz (Multi I/O)

8-Pin SO 208mil, 16-Pin SO,

8-contact USON (5x6 mm),

8-contact WSON (6x8 mm),

24-ball BGA (6x8 mm), KGW

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 64KB with 32 top/bottom 4KB sub-sectors,

H/W & S/W write protect; OTP sector; ACC pin

32 Mb

S25FL132K

108MHz (Multi I/O)

8-Pin SO 208mil, 8-Pin SO

150mil, 8-contact WSON

(5x6 mm), 24-ball BGA

(6x8 mm), KGW

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect; OTP sector; Program/erase suspend/resume

16 Mb

S25FL116K

108MHz (Multi I/O)

8-Pin SO 208mil, 8-Pin SO

150mil, 8-contact WSON

(5x6 mm), 24-ball BGA

(6x8 mm), KGW

-40

to +85

-40

to +105

2.7-3.6

x1, x2,

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect; OTP sector; Program/erase suspend/resume

16 Mb

S25FL216K

65MHz (Single I/O,

Dual Output)

8-Pin SO 208mil,

8-Pin SO 150mil

-40

to +85

2.7-3.6

x1, x2

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect

8 Mb

S25FL208K

76MHz (Single I/O,

Dual Output)

8-Pin SO 208mil,

8-Pin SO 150mil

-40

to +85

2.7-3.6

x1, x2

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect

4 Mb

S25FL204K

85MHz (Single I/O,

Dual Output)

8-Pin SO 208mil,

8-Pin SO 150mil

-40

to +85

2.7-3.6

x1, x2

Sectors: uniform 4KB with 64KB block erase; H/W & S/W

write protect

3.0V SPI Flash Memory

Sector:

T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect

1) 3.0-3.6V. *Not recommended for new designs.

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

part

number

density

(gbits)

i/o bus

width

number

of blocks

page

size

(bytes)

sequential

access

(ns)

random

access

(us)

page

program

time (us)

block

erase

time (ms)

ecc bits

required

packages temp

(v)

i/o

(v)

features

S34ML01G100

1024

2048+64

200

TSOP 48,
BGA 63

-40

to +85

(Ind),
-40

to +105

(Auto)

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, HW protection for involuntary
pgm/erase during power transition, Block zero valid up
to 1K cycles, Supports Read Cache. Temp support up to
105C available with *2-bit ECC instead of 1-bit ECC.

S34ML02G100

2048

2048+64

200

3.5

TSOP 48,
BGA 63

-40

to +85

(Ind),
-40

to +105

(Auto)

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, OTP, HW protection for involuntary
pgm/erase during power transition, Block zero valid
up to 1K cycles, Supports Read and Write Cache with
Multi-plane support. Now AEC-Q100, GT-Grade
available. Temp support up to 105C available now.

S34ML02G104

x16

2048

2048+64

200

3.5

TSOP 48

-40

to +85

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, OTP, HW protection for involuntary
pgm/erase during power transition, Block zero valid
up to 1K cycles, Supports Read and Write Cache with
Multi-plane support.

S34ML04G100

4096

2048+64

200

3.5

TSOP 48,
BGA 63

-40

to +85C

(Ind),
-40

to +105

(Auto)

2.7-3.6

-0.6-4.6

S34ML04G104

x16

4096

2048+64

200

3.5

TSOP 48,
BGA 63

-40

to +85

(Ind),
-40

to 105

(Auto)

2.7-3.6

-0.6-4.6

S34ML08G101

8192

2048+64

200

3.5

TSOP 48,
BGA 63

-40

to +85

2.7-3.6

-0.6-4.6

BGA-Single Chip Enable).

S34ML01G200

1024

2048+64

300

TSOP 48,
BGA 63,
BGA 67

-40

to +85

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, OTP, HW protection for involuntary
pgm/erase during power transition, Block zero valid
up to 1K cycles, Supports Read and Write Cache with
Multi-plane support. Unique ID support.

S34ML01G204

x16

1024

2048+64

300

TSOP_48

-40

to +85

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, OTP, HW protection for involuntary
pgm/erase during power transition, Block zero valid
up to 1K cycles, Supports Read and Write Cache with
Multi-plane support. Unique ID support.

S34ML04G200

4096

2048+64

300

3.5

TSOP_48,
BGA_63

-40

to +85

2.7-3.6

-0.6-4.6

ONFI 1.0 compliant, OTP, HW protection for
involuntary pgm/erase during power transition, Block
zero valid up to 1K cycles, Supports Read and Write
Cache with Multi-plane support. Unique ID support.

3.0V NAND Memory

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

part

number

density

(gbits)

i/o bus

width

number

of blocks

page

size

(bytes)

sequential

access

(ns)

random

access

(us)

page

program

time (us)

block

erase

time (ms)

ecc bits

required

packages temp

(v)

i/o

(v)

features

S34MS01G100

1024

2048+64

250

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read Cache

S34MS01G104

x16

1024

2048+64

250

3.5

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read Cache

S34MS02G100

2048

2048+64

250

3.5

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read and Write Cache with Multi-plane support

S34MS02G104

x16

2048

2048+64

250

3.5

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read and Write Cache with Multi-plane support

S34MS04G100

4096

2048+64

200

3.5

TSOP 48,
BGA 63

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read and Write Cache with Multi-plane support

S34MS01G200

1024

2048+64

300

BGA 63,

BGA 67

-40

+85

1.7-1.95

-0.6-2.7

ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/
erase during power transition, Block zero valid up to 1K cycles,
Supports Read Cache and Write Cache with Multiplane
support. Unique ID support

S34MS01G204

x16

1024

2048+64

300

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

S34MS04G200

4096

2048+64

300

3.5

BGA 63

-40

+85

1.7-1.95

-0.6-2.7

S34MS04G204

x16

4096

2048+64

300

3.5

TSOP 48,
BGA 63

-40

+85

1.7-1.95

-0.6-2.7

1.8V NAND Memory

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

i/o

(v)

org

sector features

32Mb

•

S29CD032J

75, 66, 56, 40MHz

80-Pin PQFP, 80-Ball BGA

-40° to +85°C,
-40° to +125°C,
-40° to +145°C

2.5-2.75

1.65-2.75

x32

Banks: 8/24Mb or 24/8Mb; WP#, ACC pins, Secured Silicon
Region; Advanced Sector Protection, Versatile I/O

16Mb

•

S29CD016J

66, 56, 40MHz

80-Pin PQFP, 80-Ball BGA,
KGD

-40° to +85°C,
-40° to +125°C,
-40° to +145°C

2.5-2.75

1.65-2.75

x32

Banks: 4/12Mb or 12/4Mb; WP#, ACC pins, Secured Silicon
Region; Advanced Sector Protection, Versatile I/O

2.5V Parallel Flash Memory

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

i/o

(v)

org

sector

features

512Mb

•

S29WS512P

54, 66, 80, 104MHz

84-Ball FBGA

-25° to +85°C

1.70-1.95

1.70-
1.95

x16

Banks: 16x32Mb; WP#, ACC Pins; Secured Silicon Region;
Advanced Sector Protection; 32-word write buffer

256Mb

•

S29WS256P

54, 66, 80, 104MHz

84-Ball FBGA

-25° to +85°C

1.70-1.95

1.70-
1.95

x16

Banks: 16x16Mb; WP#, ACC Pins; Secured Silicon Region;
Advanced Sector Protection; 32-word write buffer

128Mb

•

S29WS128P

54, 66, 80, 104MHz

84-Ball FBGA, KTD, KGW

-25° to +85°C

1.70-1.95

1.70-
1.95

x16

Banks: 16x8Mb; WP#, ACC Pins; Secured Silicon Region;
Advanced Sector Protection; 32-word write buffer

64Mb

•

S29WS064R

66, 83, 108MHz

84-Ball FBGA

-40° to +85°C,
-25° to +25°C

1.70-1.95

1.70-
1.95

x16

T, B

Banks: 4x16Mb; ACC Pin; Secured Silicon Region; Advanced
Sector Protection; 32-word write buffer

16Mb

S29AS016J

48-Pin TSOP, 48-Ball
FBGA, KGD, KGW

-40° to +85°C

1.65-1.95

x8/x16

T, B

Sectors: 8x8KB, 31x64KB; WP# pin, RY/BY# pin

8Mb

S29AS008J

48-Pin TSOP, 48-Ball
FBGA, KGD, KGW

-40° to +85°C

1.65-1.95

x8/x16

T, B

Sectors: 8x8KB, 15x64KB; WP# pin, RY/BY# pin

1.8V Parallel ADP Flash Memory

product

technology (nm)

code flash (mb)

psram (mb)

dram (mb)

flash/ram speed

(mhz)

mcp/pop

package (mm)

package footprint

S71WS256PC0

256

104/104

MCP

11.6 x 8.0

84-ball

1.8V Parallel ADP MCP Solutions

Sector:

T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect

1) Maximum targeted frequency noted for each product – lower speed grades may also be offered.

Spansion Product Selector Guide

Embedded and Mobile Applications Portfolio

1.8V Muxed AADM Flash Memory

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

i/o

(v)

org

sector

features

256Mb

•

S29XS256R

83, 104, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 8x32Mb; WP#, ACC Pins; Secured Silicon Region;

32-word write buffer

128Mb

•

S29XS128R

83, 104, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region;

32-word write buffer

64Mb

•

S29XS064R

66, 83, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region;

Advanced Sector Protection; 32-word write buffer

density

page

mode

simul-

burst

mode

part

number

access times (ns)/

clock frequency

packages

temp

(v)

i/o

(v)

org

sector

features

512Mb

•

S29NS512P

66, 83MHz

64-Ball BGA

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

Banks: 16x32Mb; WP#, ACC Pins; Secured Silicon Region;

Advanced Sector Protection; 32-word write buffer

256Mb

•

S29VS256R

83, 104, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 8x32Mb; WP#, ACC Pins; Secured Silicon Region;

32-word write buffer

128Mb

•

S29VS128R

83, 104, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region;

32-word write buffer

64Mb

•

S29VS064R

66, 83, 108MHz

44-Ball FBGA

-40° to +85°C,

-25° to +85°C

1.70-1.95

1.70-

1.95

x16

T, B

Banks: 4x16Mb; ACC Pin; Secured Silicon Region; Advanced

Sector Protection; 32-word write buffer

1.8V Muxed ADM Flash Memory

1.8V Muxed AADM MCP Solutions

product

technology (nm)

code flash (mb)

psram (mb)

dram (mb)

flash/ram speed

(mhz)

mcp/pop

package (mm)

package footprint

S72XS256RE0

256

108/166

MCP

8.0 x 8.0

133-ball

1.8V Muxed ADM MCP Solutions

product

technology (nm)

code flash (mb)

psram (mb)

dram (mb)

flash/ram speed

(mhz)

mcp/pop

package (mm)

package footprint

S71VS064RB0

108 / 108

MCP

7.5 x 5.0

52-ball

S71VS128RB0

128

108 / 108

MCP

7.7 x 6.2

56-ball

S71VS128RC0

128

108 / 108

MCP

7.7 x 6.2

56-ball

S71VS256RC0

256

108/108

MCP

7.7 x 6.2

56-ball

S71VS256RD0

256

128

108/108

MCP

9.2 x 8.0

56-ball

S72VS256RE0

256

108/166

MCP

8.0 x 8.0

133-ball

Sector:

T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect

1) Maximum targeted frequency noted for each product – lower speed grades may also be offered.