The information in this publication has been carefully checked and is believed to be 

accurate; however, no responsibility is assumed for inaccuracies.

Sanken reserves the right to make changes without further notice to any products herein 

in the interest of improvements in the performance, reliability, or manufacturability of its 

products.  Before placing an order, Sanken advises its customers to obtain the latest 

version of the relevant information to verify that the information being relied upon is 

current.

Application and operation examples described in this catalog are quoted for the sole 

purpose of reference for the use of the products herein and Sanken can assume no 

responsibility for any infringement of industrial property rights, intellectual property rights 

or any other rights of Sanken or any third party which may result from its use.

When using the products herein, the applicability and suitability of such products for the 

intended purpose or object shall be reviewed at the users responsibility.

Although Sanken undertakes to enhance the quality and reliability of its products, the 

occurrence of failure and defect of semiconductor products at a certain rate is inevitable.  

Users of Sanken products are requested to take, at their own risk, preventative measures 

including safety design of the equipment or systems against any possible injury, death, 

fires or damages to the society due to device failure or malfunction.

Sanken products listed in this catalog are designed and intended for the use as 

components in general purpose electronic equipment or apparatus (home appliances, 

office equipment, telecommunication equipment, measuring equipment, etc.).  

Before placing an order, the user’s written consent to the specifications is requested.

When considering the use of Sanken products in the applications where higher reliability 

is required (transportation equipment and its control systems, traffic signal control 

systems or equipment, fire/crime alarm systems, various safety devices, etc.), please 

contact your nearest Sanken sales representative to discuss and obtain written 

confirmation of your specifications.

The use of Sanken products without the written consent of Sanken in the applications 

where extremely high reliability is required (aerospace equipment, nuclear power control 

systems, life support systems, etc.) is strictly prohibited.

Anti radioactive ray design is not considered for the products listed herein.

This publication shall not be reproduced in whole or in part without prior written approval 

from Sanken.

CAUTION / WARNING

•

•

•

•

•

•

•

•

•

•

CONTENTS

1

Notes regarding Storage, Characteristics inspection, and Handling precautions

Part-numbering systems

Selection Guide

Index by Part Number

Thyristors

     General purpose,  3A,  TO-220

TF321M/341M/361M

     General purpose,  3A,  TO-220F

TF321S/341S/361S

     General purpose,  5A,  TO-220

TF521M/541M/561M

     General purpose,  5A,  TO-220F

TF521S/541S/561S

     General purpose,  8A,  TO-220

TF821M/841M/861M

     General purpose,  8A,  TO-220F

TF821S/841S/861S

     High sensitivity,  3A,  TO-220

TF321M-A/341M-A/361M-A

     High sensitivity,  5A,  TO-220F

TF541S-A/561S-A

     Array,  5A 

× 

4 circuits, SIP12Pin

SLA0201

      For HID lamp ignition with built-in reverse diode, TO-220S

TFC561D

     With built-in Avalanche diode, 3A, TO-220F

TFD312S

Triacs

     For inductive load, 3A,  TO-220

TM341M-L/361M-L

     For inductive load, 3A,  TO-220F

TM341S-L/361S-L

     For inductive load, 5A,  TO-220

TM541M-L/561M-L

     For inductive load, 5A,  TO-220F

TM541S-L/561S-L

     For inductive load, 8A,  TO-220

TM841M-L/861M-L

     For inductive load, 8A,  TO-220F

TM841S-L/861S-L

     For inductive load, 10A, TO-220F

TM1041S-L/1061S-L

     For inductive load, 12A, TO-220F

TM1241S-L/1261S-L

     For inductive load, 16A, TO-220F

TM1641S-L/1661S-L

     For inductive load, 16A, TO-3P

TM1641P-L(L)/1661P-L(L)

     For inductive load, 16A, TO-3PF

TM1641B-L/1661B-L

     For inductive load, 25A, TO-3PF

TM2541B-L/2561B-L

     For resistive load, 3A,  TO-220F

TM341S-R/361S-R

     For resistive load, 5A,  TO-220F

TM541S-R/561S-R

     For resistive load, 10A, TO-220F

TM1041S-R/1061S-R

     For resistive load, 12A, TO-220F

TM1241S-R/1261S-R

     Array, 1.2A 

× 

3 circuits, SIP8Pin

STA203A

     Array, 1.0A 

× 

4 circuits, SIP10Pin

STA221A

PNPN Switch

ET013/015/020

List of Discontinued Products

…… 

2

……………………………………………………………… 

3

………………………………………………………………………… 

4

………………………………………………………………… 

5

……………… 

6

………………… 

8

…………… 

10

……………… 

12

…………… 

14

……………… 

16

…… 

18

………………… 

20

…………………………… 

22

…………………………… 

24

…………………………… 

26

 

……………… 

28

……………… 

30

……………… 

32

……………… 

34

……………… 

36

……………… 

38

 

…………… 

40

…………… 

42

 

…………… 

44

 

……… 

46

 

…………… 

48

 

…………… 

50

 

……………… 

52

 

……………… 

54

 

…………… 

56

 

…………… 

58

  

………………………… 

60

 

………………………… 

62

 

…………………… 

64

 

………………………………………………………… 

66

Since reliability can be affected adversely by improper
storage environment and handling methods during 
Characteristic tests, please observe the following 
cautions.

(a) Cautions for Storage

1. Ensure that storage conditions comply with the 

standard temperature (5 to 35

°

C) and the standard 

relative humidity (around 40 to 75%) and avoid 
storage locations that experience extreme changes 
in temperature or humidity.

2. Avoid direct sunlight, and locations where dust or 

harmful gases are present.

3. Reinspect the product, which have been stored for 

a long time, for rust in leads and solderability.

(b) Cautions for Characteristic Tests and Handling

1. When characteristic tests are carried out on a 

product during an incoming inspection and other 
standard inspections, protect the product from 
surges of power from the test equipment, shorts 
between terminals, and faulty connections. Avoid 
testing that exceeds standard ratings.

(c) Silicone Grease

When silicone grease is used for mounting a 
product on a heat sink it should be applied on the 
product's back side and on both sides of the 
insulating plate in a thin and even way. 
Depending on the kinds of silicone grease, base 
oil permeates into the product, resulting in 
shortening product's service life. Therefore, 
careful selection should be made.

Recommended Silicone Grease

●

G-746      Shin-Etsu Chemical Co., Ltd.

●

YG6260   GE Toshiba Silicones Co., Ltd.

●

SC102     Dow Corning Toray Silicone Co.,Ltd.

(d) Fastening Torque 

When fastening torque is lower than recommended, 
thermal resistance increases and radiation effects 
decrease. On the contrary, when it is too high, the 
screw might be cut down and / or the heat sink 
might be deformed. As a result of that, distortion of 
the product's frame could arise. In order to avoid 
these problems, recommended fastening torque for 
each product type is shown in the following.

* When the surface of the heatsink where the Full Mold package 

is to be mounted is not flat and/or burrs exist around the 
mounting hole of the heatsink, the resin of the package might 
be cracked even if the torque is lower than the recommended 
value.

* When a screw is fastened with an air driver for the Full Mold 

package, a large impact is generated at the time of stop, and 
the resin may crack even if the torque is lower than the 
recommended value. An electric driver, therefore, should be 
used instead of an air driver.

(e) Soldering Temperature

In general, the product is subjected to high 
temperature when it is mounted on the printed 
circuit board,  mainly whether by either flow solder 
from a Solderbath or manual soldering with a 
soldering iron. The testing method and conditions 
(JIS-C-7021 standards) for the product’s heat 
resistance during soldering are:
“Apply 260

°

C for 10 seconds, and 350

°

C for 3 

seconds at a distance of 1.5mm from the product's 
body.” It is highly recommended soldering in as 
short a time as possible under the conditions.

Notes regarding Storage, Characteristics inspection, and Handling precautions

MT-25 (TO-220)

0.490 to 0.686N

•

m (5 to 7kgf

•

cm)

0.686 to 0.882N

•

m (7 to 9kgf

•

cm)

●

Fastening Torque

Fastening Torque

Package

2

FM20 (TO-220F)

MT-100 (TO-3P)

FM100 (TO-3PF)

Part-Numbering Systems 

(except for Array and PNPN Switch)

3

■

Ex. TM1641S-L

TM

16

4

1

S

L

-

Product series

TF: Reverse blocking three-terminal thyristor
TM: Bidirection three-terminal thyristor (triac)

Add function 

C: With built-in reverse diode
D: With built-in Avalanche diode

Current rating 

Ex.16: 16A

Reverse voltage 

Ex.4: 400V

Version No.

Package 

M: TO-220 (MT-25)
S: TO220F (FM20)
P: TO-3P (MT-100)
B: TO-3PF (FM100) 

Commutation characteristic, etc.

TF series (thyristor)
       A: High sensitivity type
TFD series (Thyristor with built-in Avalanche diode)
       VBO rank indication (See selection guide)
TM series (triac)
       L: For inductive load
       R: For resistive load

Thyristors

Thyristor with built-in reverse diode for HID lamp ignition

Thyristor with built-in Avalanche diode

Triacs (Bidirection three-terminal thyristor)

PNPN Swich

Reverse Voltage

Rated Current

Package

Gate trigger current

I

GT 

(mA) max

Page

Page

Package

Part number

Type

400V

600V

TF361M
TF361S
TF561M
TF561S
TF861M
TF861S
TF361M-A
TF561S-A
SLA0201

TO-220

10
15
15
15
15
15

     0.1
     0.2

10

6
8

10
12
14
16
18
20
22

24

TO-220F
TO-220
TO-220F
TO-220
TO-220F
TO-220
TO-220F
SLA12Pin

TFC561D

I

TRM

 (A )

430

di/dt

1200A /

µ

s

V

DRM

 (V)

Page

Package

Part number

V

DRM

  (V)

I

T(AV)

  (A)

V

BO

  (V)

600

TO-220F

26

TO-220F

3

TFD312S-C

30

±

3

20

Page

Package

Part number

V

DRM

 (V)

I

T (RMS)

  (A)

V

BO

  (V)

ET013

120 to 138

90

ET014

0.6

Axial

133 to 147

115

ET015

142 to 157

115

ET020

190 to 170

170

TFD312S-F

55

±

5

35

TFD312S-G

65

±

5

45

TFD312S-J

100

±

10

80

TFD312S-K

125

±

10

100

TFD312S-L

150

±

10

120

TFD312S-M

175

±

12

145

TFD312S-N

200

±

15

170

TFD312S-O

225

±

15

190

TF341M
TF341S
TF541M
TF541S
TF841M
TF841S
TF341M-A
TF541S-A

TF321M
TF321S
TF521M
TF521S
TF821M
TF821S
TF321M-A

—
—

—

3A

5A

8A

3A
5A

5A

×

4 circuits

General

purpose

Reverse Voltage

Rated Current

Package

Page

Type

400V

600V

TO-220

20
20
20
20
30
30
30
30
30
30
30
30
12
12
  7
  8
  3
  3

28

TO-220F

30

TO-220

32

TO-220F

34

TO-220

36

TO-220F

38

TO-220F

40

TO-220F

42

TO-220F

44

TO-3P

46

TO-3PF

48

TO-3PF

50

TO-220F

52

TO-220F

54

TO-220F

56

TO-220F

58

STA8Pin

60

66

TM361M-L
TM361S-L

✽

✽

✽
✽
✽
✽

✽
✽
✽
✽
✽
✽

✽

✽

✽
✽
✽
✽

✽
✽
✽
✽
✽
✽

TM561M-L
TM561S-L
TM861M-L
TM861S-L
TM1061S-L
TM1261S-L
TM1661S-L
TM1661P-L (L)
TM1661B-L
TM2561B-L
TM361S-R
TM561S-R
TM1061S-R
TM1261S-R

TM341M-L
TM341S-L
TM541M-L
TM541S-L
TM841M-L
TM841S-L
TM1041S-L
TM1241S-L
TM1641S-L
TM1641P-L (L)
TM1641B-L
TM2541B-L
TM341S-R
TM541S-R
TM1041S-R
TM1241S-R
STA203A
STA221A

—

STA10Pin

62

—

3A

5A

8A

10A
12A

16A

3A
5A

10A
12A

1.2A

×

3 circuits

1.0A

×

4 circuits

25A

For

inductive

load

For

resistive

load

Array

High

sensitivity

Array

200V

Selection Guide

4

Gate trigger current

I

GT 

(mA) max

✽

UL approved type available

✽

✽

✽

✽

✽

UL approved type available

ET013
ET015
ET020
SLA0201
STA203A
STA221A
TF321M
TF321M-A
TF321S
TF341M
TF341M-A
TF341S
TF361M
TF361M-A
TF361S
TF521M
TF521S
TF541M
TF541S
TF541S-A
TF561M
TF561S
TF561S-A
TF821M
TF821S
TF841M
TF841S
TF861M
TF861S
TFC561D
TFD312S-C
TFD312S-F
TFD312S-G
TFD312S-J
TFD312S-K
TFD312S-L
TFD312S-M
TFD312S-N
TFD312S-O
TM1041S-L
TM1041S-R
TM1061S-L
TM1061S-R
TM1241S-L
TM1241S-R
TM1261S-L
TM1261S-R
TM1641B-L
TM1641P-L(L)
TM1641S-L
TM1661B-L
TM1661P-L(L)
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
TM361S-L
TM361S-R
TM541M-L
TM541S-L
TM541S-R
TM561M-L
TM561S-L
TM561S-R
TM841M-L
TM841S-L
TM861M-L
TM861S-L

 64

64

 64

22

 60

62

 6

18

   8

 6

 18

  8

   6

 18

   8

 10

 12

 10

12

 20

 10

 12

 20

 14

 16

14

 16

14

16

 24

 26

26

 26

 26

 26

 26

 26

 26

 26

 40

 56

 40

 56

42

 58

 42

 58

 48

 46

 44

 48

 46

44

 50

 50

 28

 30

 52

28

 30

 52

 32

 34

 54

 32

 34

 54

 36

 38

 36

 38

Part number

Explanation 

Page

Index by Part Number 

5

PNPN Switch, V

BO

=120 to 138V, Axial package 

PNPN Switch, V

BO

=142 to 157V, Axial package 

PNPN Switch, V

BO

=190 to 210V, Axial package 

Thyristor array, 600V, 5A

×

4 circuits , SIP12Pin package 

Triac array, 400V, 1.2A

×

3 circuits, SIP8Pin package 

Triac array, 400V, 1.0A

×

4 circuits, SIP10Pin package 

General purpose thyristor, 200V, 3A, TO-220 package 
High sensitivity thyristor, 200V, 3A, TO-220 package 
General purpose thyristor, 200V, 3A, TO-220F package 
General purpose thyristor, 400V, 3A, TO-220 package 
High sensitivity thyristor, 400V, 3A, TO-220 package 
General purpose thyristor, 400V, 3A, TO-220F package 
General purpose thyristor, 600V, 3A, TO-220 package 
High sensitivity thyristor, 600V, 3A, TO-220 package 
General purpose thyristor, 600V, 3A, TO-220F package 
General purpose thyristor, 200V, 5A, TO-220 package 
General purpose thyristor, 200V, 5A, TO-220F package 
General purpose thyristor, 400V, 5A, TO-220 package 
General purpose thyristor, 400V, 5A, TO-220F package 
High sensitivity thyristor, 400V, 5A, TO-220F package 
General purpose thyristor, 600V, 5A, TO-220 package 
General purpose thyristor, 600V, 5A, TO-220F package 
High sensitivity thyristor, 600V, 5A, TO-220F package 
General purpose thyristor, 200V, 8A, TO-220 package 
General purpose thyristor, 200V, 8A, TO-220F package 
General purpose thyristor, 400V, 8A, TO-220 package 
General purpose thyristor, 400V, 8A, TO-220F package 
General purpose thyristor, 600V, 8A, TO-220 package 
General purpose thyristor, 600V, 8A, TO-220F package 
Thyristor with built-in reverse diode for HID lamp ignition, TO-220S package 
Thyristor with built-in avalanche diode, 3A, V

BO

=30V,   TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=55V,   TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=65V,   TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=100V, TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=125V, TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=150V, TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=175V, TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=200V, TO-220F package 

Thyristor with built-in avalanche diode, 3A, V

BO

=225V, TO-220F package 

Triac for inductive load, 400V, 10A, TO-220F package 
Triac for resistive load,   400V, 10A, TO-220F package 
Triac for inductive load, 600V, 10A, TO-220F package 
Triac for resistive load,   600V, 10A, TO-220F package 
Triac for inductive load, 400V, 12A, TO-220F package 
Triac for resistive load,   400V, 12A, TO-220F package 
Triac for inductive load, 600V, 12A, TO-220F package 
Triac for resistive load,   600V, 12A, TO-220F package 
Triac for inductive load, 400V, 16A, TO-3PF package 
Triac for inductive load, 400V, 16A, TO-3P package 
Triac for inductive load, 400V, 16A, TO-220F package 
Triac for inductive load, 600V, 16A, TO-3PF package 
Triac for inductive load, 600V, 16A, TO-3P package 
Triac for inductive load, 600V, 16A, TO-220F package 
Triac for inductive load, 400V, 25A, TO-3PF package 
Triac for inductive load, 600V, 25A, TO-3PF package 
Triac for inductive load, 400V, 3A, TO-220 package 
Triac for inductive load, 400V, 3A, TO-220F package 
Triac for resistive load,   400V, 3A, TO-220F package 
Triac for inductive load, 600V, 3A, TO-220 package 
Triac for inductive load, 600V, 3A, TO-220F package 
Triac for resistive load,   600V, 3A, TO-220F package 
Triac for inductive load, 400V, 5A, TO-220 package 
Triac for inductive load, 400V, 5A, TO-220F package 
Triac for resistive load,   400V, 5A, TO-220F package 
Triac for inductive load, 600V, 5A, TO-220 package 
Triac for inductive load, 600V, 5A, TO-220F package 
Triac for resistive load,   600V, 5A, TO-220F package 
Triac for inductive load, 400V, 8A, TO-220 package 
Triac for inductive load, 400V, 8A, TO-220F package 
Triac for inductive load, 600V, 8A, TO-220 package 
Triac for inductive load, 600V, 8A, TO-220F package 

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =102

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

200

TF321M

TF341M

TF361M

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G(AV)

Tj

Tstg

400

500

500

3.0

4.7

60

2.0

10

5.0

5.0

0.5

–40 to +125

–40 to +125

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/ W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

2.0

4.0

50

30

3.0

0.1

1.4

1.5

10

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=5A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc=25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=3A

●

Gate trigger current: I

GT

=10mA max

Weight: Approx. 2.6g

6

External Dimensions

(Unit: mm)

 

1.7

±

0.2

3.0

±

0.2

8.8

±

0.2

φ

3.75

±

0.1

1.35

±

0.15

2.5

±

0.1

2.5

±

0.1

+

0.2

–

0.1

0.65

10.4max

16.7max

5.0max

2.1max

12.0

min

4.0

max

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

TF321M / TF341M / TF361M

TO-220 3A Thyristor

a

b

(1) (2) (3)

a. Part Number
b. Lot Number

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature 

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

0.3

0.5

1

100

50

10

5

1.0

2.0

4.0

3.0

0

20

40

60

80

100

Number of cycle

I

TSM 

Ratings

1

5

10

50

100

Gate current  

i

GF 

(A)

0

1

2

3

0

2

4

6

8

10

12

Gate Characteristics

See graph at the upper right

P

GM

=5

W

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

0

0

1

2

10

20

30

T

j

=

–

40

°

C

T

j

=25

°

C

0

0

1

2

4

5

6

3

1

2

3

4

5

60

°

90

°

120

°

150

°

180

°

DC

θ

=30

°

50Hz Half-cycle sinewave

θ

: Conduction angle

180

°

0

°

0

0

25

50

100

75

150

125

5

4

3

2

1

Average on-state current  I

T(AV)

 (A)

θ

180

°

0

°

60

°

90

°

150

°

120

°

180

°

DC

0.5 1

10

10

2

10

3

10

4

Pulse width  

t

w (

µ

s)

0.05

0.1

1

30

10

Pulse trigger temperature 
Characteristics  

v

gt 

(Typical)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

T

C

=– 40

°

C

25

°

C

75

°

C

125

°

C

v

gt

t

w

50%

i

gt

t

w

50%

0.5 1

10

10

2

10

3

10

4

Pulse width  

t

w (

µ

s)

0.05

0.1

10

1

30

25

°

C

75

°

C

125

°

C

–40

0

25

50

75

100

125

0

5

10

15

(R

GK

=1k

Ω

)

Junction temperature  Tj (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

0

1

2

3

5

4

6

Gate trigger current  I

GT

 (mA)

–40

0

50

75

100

25

125

0.8

0.6

0.4

0

0.2

1.0

Junction temperature  Tj (

°

C)

–40

0

50

75

100

25

125

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

I

GT  

temperature Characteristics 

 

(Typical)

1

10

10

2

10

3

10

4

t, Time (ms)

0.1

1

10

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

v

gt

1cycle

10 ms

I

TSM

Tj=125

°

C

Case temperature  T

C

 (

°

C)

Tj =125

°

C

Tj = 25

°

C

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

Surge on-state current  I

TSM 

(A)

Gate voltage  

v

GF 

(V)

v

T

–

i

T 

Characteristics (max)

Average on-state current  I

T(AV)

 (A)

Average on-state power  P

T

( AV

)

 (W

)

I

T(AV )

– P

T(AV) 

Characteristics

I

T(AV)

– Tc Ratings

7

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TF321M / TF341M / TF361M

T

j

=

–

20

°

C

θ

θ

=30

°

–20

°

C

T

C

=– 40

°

C

–20

°

C

Initial junction temperature

50Hz Half-cycle sinewave

θ

: Conduction angle

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =93

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

50Hz Sine wave, RMS, Terminal to Case, 1 min. 

200

TF321S

TF341S

TF361S

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T (AV)

I

T (RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

3.0

4.7

60

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

ISO

1500

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

3.0

0.7

5.0

50

30

5.0

0.1

1.4

1.5

15

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=5A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc=25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=3A

●

Gate trigger current: I

GT

=15mA max

●

Isolation voltage: V

ISO

=1500V (50Hz Sine wave, RMS )

8

16.9

±

0.3

8.4

±

0.2

0.8

±

0.2

3.9

±

0.2

4.0

±

0.2

10.0

±

0.2

4.2

±

0.2

1.35

±

0.15

1.35

±

0.15

2.4

±

0.2

2.2

±

0.2

φ

3.3

±

0.2

0.85

+

0.2

–

0.1

+

0.2

–

0.1

C 0.5

2.8

13.0

min

2.54

2.54

0.45

TF321S, TF341S, TF361S

TO-220F 3A Thyristor

Weight: Approx. 2.1g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

a. Part Number
b. Lot Number

(1) (2) (3)

a
b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage  

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

9

TF321S, TF341S, TF361S

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=5A

●

Gate trigger current: I

GT

=15mA max

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =96

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

200

TF521M

TF541M

TF561M

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

5.0

7.8

80

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/ W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

3.0

4.0

50

30

3.0

0.1

1.4

1.5

15

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=10A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc= 25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

10

1.7

±

0.2

3.0

±

0.2

8.8

±

0.2

φ

3.75

±

0.1

1.35

±

0.15

2.5

±

0.1

2.5

±

0.1

+

0.2

–

0.1

0.65

10.4max

16.7max

5.0max

2.1max

12.0

min

4.0

max

TF521M, TF541M, TF561M

TO-220 5A Thyristor

Weight: Approx. 2.6g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

(1) (2) (3)

a. Part Number
b. Lot Number

a

b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature 

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

0.3

0.5

1

100

50

10

5

1.0

2.0

4.0

3.0

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

v

T

–

i

T 

Characteristics (max)

0

20

40

60

80

100

Number of cycle

Surge on-state current  I

TSM 

(A)

I

TSM 

Ratings

1

5

10

50

100

Gate current  

i

GF 

(A)

0

1

2

3

0

2

4

6

8

10

12

Gate voltage  

v

GF 

(V)

Gate Characteristics

0

0

1

2

10

20

30

1 cycle

10 ms

I

TSM

0

0

1

2

4

5

6

7

8

3

2

6

4

8

Average on-state current  I

T(AV)

 (A)

I

T(AV )

– P

T(AV) 

Characteristics

60

°

90

°

120

°

150

°

180

°

DC

0

0

25

100

75

50

150

125

6

8

4

2

Average on-state current  I

T(AV)

 (A)

I

T(AV)

– Tc Ratings

60

°

90

°

150

°

120

°

180

°

DC

25

°

C

75

°

C

125

°

C

i

gt

t

w

50%

–20

°

C

25

°

C

75

°

C

125

°

C

1

10

10

2

10

3

10

4

Pulse width  

t

w (

µ

s)

0.05

0.1

1

30

10

0.5

0.5

1

10

10

2

10

3

10

4

Pulse width  

t

w (

µ

s)

0.05

0.1

10

1

30

–40

0

50

75

100

25

125

0

10

20

30

Junction temperature  Tj (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

1

10

10

2

10

3

10

4

t, Time (ms)

0.1

1

10

–40

0

50

75

100

25

125

0.8

0.6

0.4

0.2

0

1.0

Junction temperature  Tj (

°

C)

0

2

4

8

10

6

12

–40

0

75

100

25

50

125

Junction temperature  Tj (

°

C)

Average on-state power  P

T

( AV

)

 (W

)

Case temperature  T

C

 (

°

C)

11

(R

GK

=1k

Ω

)

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TF521M, TF541M, TF561M

Tj =125

°

C

Tj = 25

°

C

Tj=125

°

C

Initial junction temperature

See graph at the upper right

P

GM

=5

W

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

T

j

=

–

40

°

C

T

j

=25

°

C

T

j

=

–

20

°

C

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

θ

=30

°

50Hz Half-cycle sinewave

θ

: Conduction angle

θ

180

°

0

°

θ

=30

°

Pulse trigger temperature 
Characteristics  

v

gt 

(Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

T

C

=– 40

°

C

v

gt

50%

t

w

–20

°

C

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

T

C

=– 40

°

C

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Gate trigger current  I

GT

 (mA)

I

GT  

temperature Characteristics 

 

(Typical)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=5A

●

Gate trigger current: I

GT

=15mA max

●

Isolation voltage: V

ISO

=1500V (50Hz Sine wave, RMS )

●

UL approved type available

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =87

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

50Hz Sine wave, RMS, Terminal to Case, 1 min. 

200

TF521S

TF541S

TF561S

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

5.0

7.8

80

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

ISO

1500

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

3.0

4.0

50

30

4.0

0.1

1.4

1.5

15

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=10A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc=25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

12

16.9

±

0.3

8.4

±

0.2

0.8

±

0.2

3.9

±

0.2

4.0

±

0.2

10.0

±

0.2

4.2

±

0.2

1.35

±

0.15

1.35

±

0.15

2.4

±

0.2

2.2

±

0.2

φ

3.3

±

0.2

0.85

+

0.2

–

0.1

+

0.2

–

0.1

C 0.5

2.8

13.0

min

2.54

2.54

0.45

TF521S, TF541S, TF561S

TO-220F 5A Thyristor

Weight: Approx. 2.1g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

a. Part Number
b. Lot Number

(1) (2) (3)

a
b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage  

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

0.6

0.5

0

20

40

60

80

100

1

5

10

50

100

1.0

2.0

3.0

3.6

On-state voltage  

v

T 

( V )

Number of cycle

On-state current  

i

T 

(A)

Surge on-state current  I

TSM 

(A)

v

T

–

i

T 

Characteristics (max)

0

0

2

8

6

4

12

10

2

4

6

8

10

Average on-state current  I

T(AV)

 (A)

0.5 1

10

100

1000

Pulse width  

t

w (

µ

s)

Average on-state power  P

T

( AV

)

 (W

)

0.5

1.0

1.5

2.0

I

T(AV )

– P

T(AV) 

Characteristics

0

0

25

50

100

75

150

125

2

4

6

8

10

Average on-state current  I

T(AV)

 (A)

Case temperature  T

C

 (

°

C)

I

TSM 

Ratings

1

5

10

50

100

0

2

4

6

8

10

12

14

Gate current  

i

GF 

(A)

Gate voltage  

v

GF 

(V)

Gate Characteristics

0

1

2

3

50Hz

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

0

0

1

2

10

20

30

60

°

90

°

120

°

180

°

DC

I

T(AV)

– Tc Ratings

60

°

90

°

120

°

180

°

DC

θ

=30

°

25

°

C

75

°

C

125

°

C

T

j 

=– 40

°

C

25

°

C

75

°

C

125

°

C

0.5 1

10

100

1000

–40

0

50

75

100

25

125

0.2

0.5

5

1

10

30

10

3

5

50

100

–40

0

50

100

75

25

125

0

1.0

0.8

0.6

0.4

0.2

1.2

–40

0

50

75

100

25

125

1

3

5

30

10

50

1

10

10

2

10

3

10

4

10

5

0.1

1

10

1 cycle

10 ms

TSM

I

13

(V

D

=30V, R

GK

=1k

Ω

)

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TF521S, TF541S, TF561S

Tj =125

°

C

Tj = 25

°

C

Tj=125

°

C

Initial junction temperature

See graph at the upper right

P

GM

=5

W

T

j

=

–

40

°

C

T

j

=25

°

C

T

j

=

–

20

°

C

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

θ

=30

°

50Hz Half-cycle sinewave

θ 

: Conduction angle

θ

180

°

0

°

Pulse trigger temperature 
Characteristics  

v

gt 

( Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

T

j 

=– 40

°

C

v

gt

t

w

–20

°

C

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

i

gt

t

w

–20

°

C

Junction temperature  Tj (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger current  I

GT

 (mA)

I

GT  

temperature Characteristics 

 

(Typical)

t, Time (ms)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=8A

●

Gate trigger current: I

GT

=15mA max

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =83

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

200

TF821M

TF841M

TF861M

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

8.0

12.6

120

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/

W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

5.0

4.0

50

30

2.7

0.1

1.4

1.5

15

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=15A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc= 25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

14

TF821M, TF841M, TF861M

TO-220 8A Thyristor

1.7

±

0.2

3.0

±

0.2

8.8

±

0.2

φ

3.75

±

0.1

1.35

±

0.15

2.5

±

0.1

2.5

±

0.1

+

0.2

–

0.1

0.65

10.4max

16.7max

5.0max

2.1max

12.0

min

4.0

max

Weight: Approx. 2.6g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

(1) (2) (3)

a. Part Number
b. Lot Number

a

b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature 

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

0.3

0.5

1

100

50

10

5

1.0

2.0

4.0

3.0

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

v

T

–

i

T 

Characteristics (max)

Tj=125

°

C

Tj=25

°

C

40

60

80

100

120

140

Number of cycle

Surge on-state current  I

TSM 

(A)

I

TSM 

Ratings

1

5

10

50

100

Gate current  

i

GF 

(A)

0

1

2

3

0

2

4

6

8

10

12

Gate voltage  

v

GF 

(V)

Gate Characteristics

P

GM

=5W

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

0

0

1

2

10

20

30

T

c

=25

°

C

T

c

=

–

40

°

C

T

c

=

–

20

°

C

1 cycle

10 ms

TSM

I

0

0

2

4

8

10

12

14

18

16

6

2

10

12

6

4

14

8

Average on-state current  I

T(AV)

 (A)

I

T(AV )

– P

T(AV) 

Characteristics

60

°

90

°

120

°

150

°

180

°

DC

θ

=30

°

0

0

25

50

100

75

150

125

10

12

14

16

8

6

4

2

Average on-state current  I

T(AV)

 (A)

I

T(AV)

– Tc Ratings

60

°

90

°

150

°

120

°

180

°

DC

θ

=3

0

°

–40

0

75

100

25

50

125

0

10

20

26

1

10

10

2

10

3

10

4

0.1

1

10

25

°

C

75

°

C

125

°

C

T

C

=– 40

°

C

25

°

C

75

°

C

125

°

C

1

10

10

2

10

3

10

4

0.1

1

30

10

0.5

0.5

1

10

10

2

10

3

10

4

0.1

10

1

30

–40

0

75

100

25

50

125

0.8

0.6

0.4

0.2

0

1.0

0

2

4

8

10

6

12

14

– 40

0

75

100

25

50

125

Average on-state power  P

T

( AV

)

 (W

)

Case temperature  T

C

 (

°

C)

15

(R

GK

=1k

Ω

)

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TF821M, TF841M, TF861M

Tj=125

°

C

Initial junction temperature

See graph at the upper right

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

50Hz Half-cycle sinewave

θ

: Conduction angle

θ

180

°

0

°

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

v

gt 

(Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

T

C

=– 40

°

C

–20

°

C

v

gt

50%

t

w

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

– 20

°

C

i

gt

t

w

50%

Case temperature  Tc (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger current  I

GT

 (mA)

I

GT  

temperature Characteristics 

 

(Typical)

t, Time (ms)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=8A

●

Gate trigger current: I

GT

=15mA max

●

Isolation voltage: V

ISO

=1500V (50Hz Sine wave, RMS )

●

UL approved type available

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =87

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

50Hz Sine wave, RMS, Terminal to Case, 1 min. 

200

TF821S

TF841S

TF861S

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

8.0

12.6

120

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

ISO

1500

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

5.0

4.0

50

30

3.6

0.1

1.4

1.5

15

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=15A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc=25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

16

16.9

±

0.3

8.4

±

0.2

0.8

±

0.2

3.9

±

0.2

4.0

±

0.2

10.0

±

0.2

4.2

±

0.2

1.35

±

0.15

1.35

±

0.15

2.4

±

0.2

2.2

±

0.2

φ

3.3

±

0.2

0.85

+

0.2

–

0.1

+

0.2

–

0.1

C 0.5

2.8

13.0

min

2.54

2.54

0.45

TF821S, TF841S, TF861S

TO-220F 8A Thyristor

Weight: Approx. 2.1g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

a. Part Number
b. Lot Number

(1) (2) (3)

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage  

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

a
b

0.8

5

1

10

100

50

1.0

2.0

3.0

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

v

T

–

i

T 

Characteristics (max)

20

40

60

80

100

120

140

Number of cycle

Surge on-state current  I

TSM 

(A)

I

TSM 

Ratings

1

5

10

50

100

50Hz

Gate current  

i

GF 

(A)

0

1

2

3

0

2

4

6

8

10

12

14

Gate voltage  

v

GF 

(V)

Gate Characteristics

P

GM

=5W

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

0

0

1

2

10

20

30

0

0

4

8

12

20

16

5

10

15

Average on-state current  I

T(AV)

 (A)

I

T(AV )

– P

T(AV) 

Characteristics

60

°

90

°

120

°

180

°

DC

θ

=3

0

°

0

0

25

50

100

75

150

125

5

15

10

Average on-state current  I

T(AV)

 (A)

I

T(AV)

– Tc Ratings

60

°

90

°

120

°

180

°

DC

θ

=30

°

75

°

C

125

°

C

25

°

C

75

°

C

125

°

C

–40

0

50

75

100

25

125

10

3

5

50

100

– 40

0

50

75

100

25

125

1

3

5

30

10

50

–40

0

50

75

100

25

125

0

1.0

0.8

0.6

0.4

0.2

1

10

10

2

10

3

10

4

10

5

0.1

1

10

0.5

1

10

100

1000

0.5

1.0

1.5

2.0

0.5 1

10

100

1000

0.2

0.5

5

1

10

30

25

°

C

1 cycle

10 ms

TSM

I

Average on-state power  P

T

( AV

)

 (W

)

Case temperature  T

C

 (

°

C)

17

(V

D

=30V, R

GK

=1k

Ω

)

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TF821S, TF841S, TF861S

Tj =125

°

C

Tj = 25

°

C

Tj=125

°

C

Initial junction temperature

See graph at the upper right

T

j

=

–

40

°

C

T

j

=25

°

C

T

j

=

–

20

°

C

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

v

gt 

( Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

T

j 

=– 40

°

C

v

gt

t

w

–20

°

C

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

T

j 

=– 40

°

C

i

gt

t

w

–20

°

C

Junction temperature  Tj (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger current  I

GT

 (mA)

I

GT  

temperature Characteristics 

 

(Typical)

t, Time (ms)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

■

Features

●

Repetitive peak off-state voltage: V

DRM

=200, 400, 600V

●

Average on-state current: I

T(AV)

=3A

●

High sensitive Gate trigger Current: I

GT

=0.1mA max

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =87

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

200

TF321M-A TF341M-A TF361M-A

600

200

600

300

700

300

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

3.0

4.7

60

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +110

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

1.0

20

30

3.0

0.1

1.4

1

0.1

1.0

1.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=5A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc= 25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

18

TF321M-A, TF341M-A, TF361M-A

TO-220 3A High sensitive Thyristor

1.7

±

0.2

3.0

±

0.2

8.8

±

0.2

φ

3.75

±

0.1

1.35

±

0.15

2.5

±

0.1

2.5

±

0.1

+

0.2

–

0.1

0.65

10.4max

16.7max

5.0max

2.1max

12.0

min

4.0

max

Weight: Approx. 2.6g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

(1) (2) (3)

a. Part Number
b. Lot Number

a

b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature 

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

0.3

0.5

1

100

50

10

5

1.0

2.0

4.0

3.0

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

v

T

–

i

T 

Characteristics (max)

Tj=125

°

C

Tj=25

°

C

0

20

40

60

80

Number of cycle

Surge on-state current  I

TSM 

(A)

I

TSM 

Ratings

1

5

10

50

100

0

1

3

2

0

2

4

6

8

12

10

Gate Characteristics

1 cycle

10 ms

TSM

I

0

0

1

2

3

4

5

7

6

1

3

4

2

5

Average on-state current  I

T(AV)

 (A)

I

T(AV )

– P

T(AV) 

Characteristics

60

°

90

°

120

°

150

°

180

°

DC

θ

=30

°

0

0

25

50

100

75

150

125

5

4

3

1

2

Average on-state current  I

T(AV)

 (A)

I

T(AV)

– Tc Ratings

60

°

90

°

150

°

120

°

180

°

DC

θ

=3

0

°

– 40

0

75

125

100

25

50

0.8

1.0

0.6

0.4

0

0.2

0

10

20

24

–40

0

75

125

100

25

50

1

10

10

2

10

3

0.5

1

5

50

10

1

10

10

2

10

3

0.5

1

5

50

10

1

10

10

2

10

3

10

4

0.1

1

10

Average on-state power  P

T

( AV

)

 (W

)

Case temperature  T

C

 (

°

C)

19

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

Gate current  

i

GF 

(A)

Gate voltage  

v

GF 

(V)

P

GM

=5

W

TF321M-A, TF341M-A, TF361M-A

Tj=125

°

C

Initial junction temperature

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

50Hz Half-cycle sinewave

θ 

: Conduction angle

180

°

0

°

θ

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

v

gt 

(Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

v

gt

50%

t

w

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

i

gt

t

w

50%

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger current  I

GT

 (

µ

A)

I

GT  

temperature Characteristics 

 

(Typical)

t, Time (ms)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)

■

Features

●

Repetitive peak off-state voltage: V

DRM

=400, 600V

●

Average on-state current: I

T(AV)

=5A

●

High sensitive Gate trigger current: I

GT

=0.2mA max

●

Isolation voltage: V

ISO

=1500V (50Hz Sine wave, RMS )

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=470

Ω

50Hz Half-cycle sinewave, Continuous current, Tc =88

°

C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

50Hz Sine wave, RMS, Terminal to Case, 1 min. 

TF541S-A

TF561S-A

600

600

700

700

400

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

400

500

500

5.0

7.8

80

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

ISO

1500

V

V

mA

V

mA

V/

µ

S

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

I

DRM

V

TM

I

GT

tq

I

RRM

V

GT

V

GD

I

H

dv/dt

Rth

0.03

4.0

20

30

4.0

0.1

1.4

1.5

0.2

2.0

2.0

Tj=125

°

C, 

V

D

=V

DRM

(V

RRM

), R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=10A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Junction to case

Tc=25

°

C

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

20

TF541S-A,TF561S-A

TO-220F 5A High sensitive Thyristor

16.9

±

0.3

8.4

±

0.2

0.8

±

0.2

3.9

±

0.2

4.0

±

0.2

10.0

±

0.2

4.2

±

0.2

1.35

±

0.15

1.35

±

0.15

2.4

±

0.2

2.2

±

0.2

φ

3.3

±

0.2

0.85

+

0.2

–

0.1

+

0.2

–

0.1

C 0.5

2.8

13.0

min

2.54

2.54

0.45

Weight: Approx. 2.1g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

a. Part Number
b. Lot Number

(1) (2) (3)

a
b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage  

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

21

TF541S-A,TF561S-A

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

Parameter

Symbol

Ratings

Unit

Conditions

V

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

50Hz Half-cycle sinewave, Conduction angle 180

°

, Continuous current

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125

°

C

600

V

V

V

A

A

A

A

V

V

W

W

°

C

°

C

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

600

650

650

5.0

7.8

80

2.0

10

5.0

5.0

0.5

– 40 to +125

– 40 to +125

V

V

mA

V

mA

V/

µ

S

W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

mA

µ

A

µ

A

I

DRM

V

TM

I

GT

I

RRM

V

GT

V

GD

I

H

dv/dt

P

T

5.0

0.7

4.0

50

32

4

0.1

1.4

1.5

10

2.0

2.0

100

100

Tj=125

°

C, 

V

D

=600V, R

GK

=1k

Ω

 

Tj=25

°

C, 

V

D

=600V, R

GK

=1k

Ω

 

Tj=125

°

C, 

V

D

=600V, R

GK

=1k

Ω

 

Tj=25

°

C, 

V

D

=600V, R

GK

=1k

Ω

 

T

C

=25

°

C, 

I

TM

=10A

V

D

=6V, R

L

=10

Ω

, T

C

=25

°

C

R

GK

=1k

Ω

, Tj=25

°

C

Without Heatsink, T

j

=25

°

C, All elements operation

With infinite Heatsink, T

j

=25

°

C, All elements operation

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

, C

GK

=0.033

µ

F 

V

D

=1/2

×

V

DRM

, Tj=125

°

C, 

R

GK

=1k

Ω

■

Features

●

5A 4 Thyristors combined one package 

●

Repetitive peak off-state voltage: V

DRM

=600V

●

Average on-state current: I

T(AV)

=5A

●

Gate trigger current: I

GT

=10mA max

22

1   2   3   4   5   6   7   8   9  10 11 12

G  K   A   G  K   A   G   K   A  G   K  A   

31.5max

0.85

φ

3.2

±

0.15

31.0

±

0.2

3.2

±

0.15

×

3.8

11

✕

P2.54

±

0.7

=27.94

±

0.1

24.4

±

0.2

16.4

±

0.2

0.55

2.2

0.7

Pin 1

12

8

.5max

9.9

±

0.2

13.0

±

0.2

16.0

±

0.2

2.7

9.5min 

(10.4)

0.8max

1.2

±

0.15

1.45

±

0.15

+

0.2

–

0.1

+

0.2

–

0.1

4.8

±

0.2

1.7

±

0.1

Thy1

Thy2

Thy3

Thy4

1

2

3

4

5

6

7

8

9    10  11   12

a. Part Number
b. Lot Number

1, 4, 7, 10 : Gate (G)
2, 5, 8, 11 : Cathode (K)
3, 6, 9, 12 : Anode (A)

SLA0201

5A 600V 4 circuits Thyristor array

Weight: Approx. 6.1g

External Dimensions

(Unit: mm)

 

a

b

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Total power dissipation

f    50Hz

f    50Hz, duty    10%

f    50Hz, duty    10%

23

SLA0201

■

Absolute Maximum Ratings 

Parameter

Symbol

Ratings

Unit

Conditions

V

600

A

A/

µ

s

A

W

W

V

A

°

C

°

C

V

DRM

I

TRM

di/dt

I

FGM

P

GM

P

G (AV)

V

RGM

I

FRM

Tj

Tstg

430

1200

2.0

5.0

0.5

5

240

– 40 to +125

– 40 to +125

■

Features

●

Repetitive peak off-state voltage: V

DRM

=600V

●

Repetitive peak surge on-state current: I

TRM

=430A

●

Critical rate-of-rise of on-state current: di/dt=1200A /

µ

s

●

Gate trigger current: I

GT

=20mA max

●

With built-in reverse diode

24

V

D

G

1

G

2

C

L

Sample

Measurement circuit

Current waveform

 

(1cycle)

10.2

±

0.3

1.2

±

0.2

1.27

±

0.2

2.59

±

0.2

1.3

±

0.2

4.44

±

0.2

0.86

0.76

±

0.1

0.4

±

0.1

2.54

±

0.5

11.0

±

0.5

2.54

±

0.5

8.6

±

0.3

11.3

±

0.5

(1.4)

+

0.2

–

0.1

10.0

Tj= – 40 to +125

°

C, R

GK

=1k

Ω

V

D     

430V, 100kcycle, Wp=1.3

µ

s, Ta=125

°

C

f    50Hz, duty    10%

f    50Hz, duty    10%

f    50Hz

V

D    

430V, 100kcycle, Wp=1.3

µ

s, Ta=125

°

C

■

Electrical Characteristics 

mA

V

mA

µ

A

mA

°

C/W

V

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

V

V

V

TM

I

GT

I

H

V

F

V

GT

V

GD

I

DRM 

(1)

I

DRM 

(2)

Rth

10.0

1.4

4.0

1

100

2

0.1

20

1.5

1.4

(Tj=25

°

C)

I

T

=10A

V

D

=6V, R

L

=10

Ω

V

D

=6V, R

L

=10

Ω

V

D

=480V, Tj=125

°

C

R

G–K

=1k

Ω

, Tj=25

°

C

V

D

=V

DRM

, R

G–K

=1k

Ω

, Tj=25

°

C

V

D

=V

DRM

, R

G–K

=1k

Ω

, Tj=125

°

C

I

F

=10A

Junction to case

(Ta=25

°

C)

100A

/div

2

µ

s/div

TFC561D

TO-220S Thyristor with built-in reverse diode for HID lamp ignition 

Weight: Approx. 1.5g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

(1)  (2)  (3)

+

0.3

–

0.5

Repetitive peak off-state voltage

Repetitive surge peak on-state current

Critical rate-of-rise of on-state current

Peak forward gate current

Peak gate power loss

Average gate power loss

Peak reverse gate voltage

Diode repetitive peak surge forward current 

Junction temperature

Storage temperature

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Off-state current (1)

Off-state current (2)

Thermal resistance

Diode forward voltage

✽ 

The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125

°

C. This process shall be repeated up to 100K cycles. 

✽

✽

✽

25

TFC561D

■

Absolute Maximum Ratings 

■

Electrical Characteristics 

✽

V

DRM

✽

V

BO

Parameter

Symbol

Ratings

Unit

Conditions

V

50Hz Half-cycle sinewave, 180

°

, Continuous current, Tc

=92

°

C

50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj

=125

°

C

50Hz Sine wave, RMS, Terminal to case, 1min.

(

Tj=25

°

C, unless otherwise specified)

A

A

V

V

W

W

°

C

°

C

V

V

DRM

I

T (RMS)

I

TSM

V

FGM

V

RGM

P

GM

P

G (AV)

Tj

Tstg

V

ISO

4.7

60

1.5

5.0

5.0

0.5

–

40 to 

+

125

–

10 to 

+

125

1500

Tj

=–10 to +125

°

C, 

R

GK

=1k

Ω

A

I

T (AV)

3.0

2ms    t    10ms

f    50Hz, duty    10%

f    50Hz, duty    10%

f    50Hz

A

2

•

sec

I

2

t

18

V

mA

V

V

mA

V

mA

V/

µ

S

°

C/W

Parameter

Symbol

Ratings

typ

min

max

Unit

Conditions

mA

µ

A

I

DRM

V

BO

V

TM

I

BO

V

GT

I

GT

V

GT

I

H

dv/dt

Rth

40

✽

✽

1.0

10

15

5.0

0.1

0.2

0.2

15

1.4

100

1.0

Rank

Ratings

Tj=125

°

C, V

D

=V

DRM

, R

GK

=1k

Ω

Tj=25

°

C, V

D

=V

DRM

, R

GK

=1k

Ω

I

TM

=5A

V

D

=6V, R

L

=10

Ω

V

D

=V

DRM

, Tj=125

°

C, R

GK

=1k

Ω

Junction to case

V

D

=V

DRM

, Tj=125

°

C, R

GK

=1k

Ω

, C

GK

=0.033

µ

F

R

GK

=1k

Ω

, Tj=125

°

C

■

Features

●

With built-in Avalanche diode

●

Average on-state current: I

T(AV)

=3A

●

Gate trigger current: I

GT

=10mA max

●

Isolation voltage: V

ISO

=1500V(50Hz AC, RMS, 1min.)

A

K

G

Reg.

Input

TFD312S

Application example

min

typ

max

-C

27

30

33

-F

50

55

60

-G

60

65

70

-J

90

100

110

-K

115

125

135

-L

140

150

160

-M

163

175

187

-N

185

200

215

-O

210

225

240

Rank

Ratings

-C

20

-F

35

-G

45

-J

80

-K

100

-L

120

-M

145

-N

170

-O

190

26

16.9

±

0.3

8.4

±

0.2

0.8

±

0.2

3.9

±

0.2

4.0

±

0.2

10.0

±

0.2

4.2

±

0.2

1.35

±

0.15

1.35

±

0.15

2.4

±

0.2

2.2

±

0.2

φ

3.3

±

0.2

0.85

+

0.2

–

0.1

+

0.2

–

0.1

C 0.5

2.8

13.0

min

2.54

2.54

0.45

TFD312S series

TO-220F 3A Thyristor with built-in Avalanche diode

Weight: Approx. 2.1g

External Dimensions

(Unit: mm)

 

(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)

a. Part Number
b. Lot Number

(1) (2) (3)

a
b

Repetitive peak off-state voltage

Average on-state current

RMS on-state current

Surge on-state current

Squared rated current and time product

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage  

Off-state current

Breakover voltage

Breakover current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Thermal resistance

Load

Overvoltage detection

Overcurrent detection

Tj=125

°

C

Tj=25

°

C

0.3

0.5

1

100

50

10

5

1.0

2.0

4.0

3.0

On-state voltage  

v

T 

( V )

On-state current  

i

T 

(A)

v

T

–

i

T 

Characteristics (max)

Gate current  

i

GF 

(A)

0

1

2

3

0

2

4

6

8

10

20

18

16

14

12

Gate voltage  

v

GF 

(V)

Gate Characteristics

0

20

40

60

80

100

Number of cycle

Surge on-state current  I

TSM 

(A)

I

TSM 

Ratings

1

5

10

50

100

Gate trigger current  I

GT

 (mA)

Gate trigger voltage  V

GT

 (V)

0

0

1

2

10

20

See graph at the upper right

60

°

90

°

120

°

180

°

DC

θ

=3

0

°

0

0

1

2

4

5

6

8

7

3

1

5

2

3

4

6

Average on-state current  I

T(AV)

 (A)

I

T(AV )

– P

T(AV) 

Characteristics

Half wave, single phase

0

0

25

50

100

75

150

125

3

6

2

5

4

1

Average on-state current  I

T(AV)

 (A)

I

T(AV)

– Tc Ratings

60

°

90

°

120

°

180

°

DC

θ

=3

0

°

Half wave, single phase

T

j 

=– 40

°

C

0

°

C

25

°

C

50

°

C

75

°

C

100

°

C

125

°

C

1

10

10

2

10

3

0.5

1.0

2.0

1.5

0.5

0.5

1

10

10

2

10

3

0.2

0.5

10

1

5

30

– 40

0

75

100

125

25

50

0.8

0.6

0.4

0.2

0

1.0

2

0

4

8

10

6

–40

0

75

100

125

25

50

0

°

C

25

°

C

50

°

C

75

°

C

100

°

C

125

°

C

– 40

0

75

125

100

25

50

0

2

10

8

6

4

12

14

1

10

10

2

10

3

10

4

0.1

0.5

1

5

10

Average on-state power  P

T

( AV

)

 (W

)

Case temperature  T

C

 (

°

C)

27

(R

GK

=1k

Ω

)

(V

D

=6V, R

L

=10

Ω

)

(V

D

=6V, R

L

=10

Ω

)

TFD312S series

1 cycle

10 ms

TSM

I

Tj=125

°

C

Initial junction temperature

T

j

=

–

40

°

C

T

j

=25

°

C

T

j

=

–

20

°

C

θ 

: Conduction angle

180

°

0

° θ

θ 

: Conduction angle

180

°

0

° θ

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

v

gt 

( Typical)

v

gt

V

GT

DC gate trigger

voltage at 25

°

C

( )

( )

Gate trigger voltage 

at Ta and 

t

w

–20

°

C

v

gt

t

w

Pulse width  

t

w (

µ

s)

Pulse trigger temperature 
Characteristics  

i

gt 

(Typical)

i

gt

I

GT

DC gate trigger

current at 25

°

C

( )

( )

Gate trigger current 

at Ta and 

t

w

T

j 

=– 40

°

C

i

gt

t

w

–20

°

C

Junction temperature  Tj (

°

C)

Holding current  I

H

 (mA)

I

H  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger voltage  V

GT 

(V)

V

GT  

temperature Characteristics 

 

(Typical)

Junction temperature  Tj (

°

C)

Gate trigger current  I

GT

 (mA)

I

GT  

temperature Characteristics 

 

(Typical)

t, Time (ms)

Transient thermal resistance  

r

th 

(

°

C/

W

)

Transient thermal resistance 
Characteristics 

 

(Junction to case)