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Datasheet

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・

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Single-chip Type with Built-in FET Switching Regulators

Simple Step-down
Switching Regulators
with Built-in Power MOSFET

BD9G101G

●

General Description

The BD9G101G is switching regulator with integrated
internal high-side 42V Power MOSFET.
It provides 0.5A DC output with small SSOP6 package.
Operating frequency is fixed 1.5MHz, allowing the use
of small inductor and ceramic capacitor.
The components of phase compensation is built in.

●

Features

■

High and Wide Input Range (VCC=6V~42V)

■

45V/800m

Internal Power MOSFET

■

1.5MHz Fixed Operating Frequency

■

Feedback Pin Voltage 0.75V±1.5%

■

Internal compensated

■

Internal Over Current protection, Under
Voltage Locked Out, Thermal shutdown

■

μA Shutdown Supply Current (Ist=0uA)

■

Small package SSOP6

●

Key Specifications

■

Input Voltage

■

Ref. Precision (Ta=25

℃

)

(Ta=-25~105

℃

)

■

Max Output Current

■

Operating Temperature

■

Max Junction Temperature

～

42 [V]

1.5[%]

2.0[%]

0.5 [A] (Max.)

-40

℃

~105

℃

150

℃

●

Packages

SSOP6

2.90

㎜×

2.80

㎜×

1.25

㎜

●

Applications

■

Industrial distributed power applications

■

Automotive Applications

■

Battery powered equipment

■

OA instruments

●

Typical Application Circuits

VCC

BST

GND

VCC

15000pF

ON/OFF control

C1:4.7μF/50V

C2:10μF/10V

L1:6.8uH

5V/0.5A

680Ω

3.9kΩ

0.1uF

○

Structure

：

Silicon Monolithic Integrated Circuit

○

This product is not designed for normal operation with in a radioactive.

Figure 1. Typical Application Circuit

SSOP6

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●

Pin Configuration

BST

GND

VCC

●

Pin Description

Pin No.

Pin Name

Description

BST

The pin is power supply for floating Power NMOS driver. Connected a
bypass capacitor between the pin and Lx pin for bootstrap operation.

GND

Ground. It should be connected as possible to the output capacitor ground
avoiding the high current switch paths.

Voltage feedback pin. This pin is error-amp input, the DCDC is set 0.75V at
this pin with feed-back operation.

Enable input pin. The DCDC is start-up to apply over 2.0V.
This pin is pull-down about 550k

Ω, the DCDC is shutdown to open or apply

under 0.8V.

VCC

Input supply. It should be connected as near as possible to the bypass
capacitor.

Power FET switch output. It should be connected as near as possible to the
schottky barrier diode, and inductor.

●

Block Diagram

0.75V

Error

AMP

VCC

Reference

UVLO

VREF

REG

800mΩ

Soft

Start

ON/OFF

GND

BST

TSD

shutdown

R　　Q
S　　　

Current

Comparator

VOUT

Oscillator

1.5MHz

Current Sense

AMP

OCP

Figure 2. Pin Configuration (TOP VIEW)

Figure 3. Block Diagram

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Description of Blocks

1. Reference

This block generates reference voltage and current. It start operation by applying EN more than 2.0V.
It provides reference voltage and current to error-amp , oscillator ,and etc.

2. REG

This is a gate drive voltage generator and 4.2V regulator for internal circuit power supply.

3. OSC

This is a precise wave oscillation circuit with operation frequency fixed to 1.5MHz fixed.
To protect from output shorted to GND, Frequency fold-back function is built in.

4. Soft Start

This block does Soft Start to the output voltage of DC/DC comparator, and prevents in-rush current during Start-up.
Soft Start Time depend on application and start-condition because Frequency fold-back function is built in.

5. ERROR AMP

This is an error amplifier what detects output signal, and outputs PWM control signal.
Internal reference voltage is set to 0.75V. Also, the BD9G101G has internal phase compensated element between
input and output.

6. Current Comparator

This is a comparator that outputs PWM signal from current feed-back signal and error-amp output for current-mode.

7. Nch FET SW

This is an 45V/800m

Ω Power Nch MOSFET SW that converts inductor current of DC/DC converter.

8. UVLO

This is a low voltage error prevention circuit.
This prevents internal circuit error during increase of power supply voltage and during decline of power supply voltage.
It monitors VCC pin voltage, And when VCC voltage becomes 5.4V and below, it turns OFF all output FET and turns
OFF DC/DC comparator output, and Soft Start circuit resets.
Now this Threshold has hysteresis of 200mV.

9. EN

When a Voltage of 2.0V or more is applied, it turns ON, at Open or 0V application, it turns OFF.
About 5

50kΩ Pull-down Resistance is contained within the Pin.

10. OCP

The current of power MOSFET is limited by this function.

The power MOSFET current is sensed by current sense FET. If the current of power MOSFET is over 1.2A(typ), this

function reduce duty by pulse

–by- pulse and restrict the and restraint on over current.

11.TSD

Circuit for preventing malfunction at high Temperature .
When it detects an abnormal temperature exceeding Tj=175

℃

, it turns OFF DC/DC Comparator Output. The threshold

of TSD has Hysteresis(25

℃

). If Temperature falls 150

℃

,the IC automatically returns.

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Absolute Maximum Ratings

Item

Symbol

Ratings

Unit

VCC

Maximum input current

Imax

1.0

BST to GND

VBST

BST to LX

⊿

VBST

VEN

VLx

VFB

Power Dissipation

0.675

(*1)

Operating Temperature

Topr

-40

～

+105

℃

Storage Temperature

Tstg

-55

～

+150

℃

Junction Temperature

Tjmax

150

(*2)

℃

(*1)During mounting of 70×70×1.6t mm 1layer board.Reduce by 5.4mW for every 1

℃

increase. (Above 25

℃

)

                                          (*2)Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator
                                                will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.
                                                thermal shutdown engages at Tj=175

℃

(typ) and disengages at Tj=150

℃

(typ)

●

Electrical Characteristics (

Unless otherwise specified

Ta=25

℃

, VCC=24V, Vo=5V,EN=3V

)

Parameter

Symbol

Limit

Unit

Condition

Min

Typ

Max

【

Circuit Current

】

Stand-by Current

Ist

－

µA

VEN=0V

Operating Current

Icc

－

0.7

1.2

FB=1.2V

【

Under Voltage Lock Out (UVLO)

】

Threshold Voltage

Vuv

5.1

5.4

5.7

Hysteresis width

Vuvhy

－

200

300

【

Oscillator

】

Switching Frequency

fosc

1.3

1.5

1.7

MHz

Max Duty Cycle

Dmax

【

Error AMP

】

FB Pin Reference Voltage

VFBN

0.739

0.750

0.761

Ta=25

℃

VFBA

0.735

0.750

0.765

Ta=-25~105

℃

FB Pin Bias Current

IFB

-100

100

VFB=2.0V

Soft-Start Time

Tsoft

1.2

4.0

【

Current Comparator

】

Trans-conductance

A/V

【

Output

】

Nch MOSFET ON Resistance

RonH

－

800

－

mΩ

Min ON Time

Tmin

－

100

－

nsec

Switch Current Limit

Iocp

0.85

1.2

－

【

CTL

】

EN Thresohold Voltage

VENON

2.0

－

VCC

OFF VENOFF

-0.3

－

0.8

EN Input Bias Current

REN

2.7

5.5

µA

VEN=3V

◎

Not designed to withstand radiation.

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Operating Ratings

Item

Symbol

Ratings

Unit

Min

Typ

Max

Input Voltage

VCC

Output Voltage

VOUT

1.0

(*3)

VCC

0.7

(*4)

Output Current

IOUT

500

(*3)Restricted by minimum on pulse typ. 100nsec
(*4)Restricted by maxduty ,Ron and BST-UVLO.

●

input and output voltage restriction
The input voltage range of BD9G101G is limited by Ron, Maxduty(min85%) and preventing malfunction at low voltage
between BST and LX(BST-UVLO).

①

BST-UVLO

BSTUVLO is the function that prevent the IC from abnormal operation that is caused by shortage of charge of High-SideFET
driving.

If the voltage between BST and LX is lower than 1.5V, High-Side FET is turned off and there are new pass to charge

voltage VCC to BST.

BST voltage is charged by Vcc and goes over BST-UVLO threshold. As a result , BST-UVLO is turned

off.
The condition that BST-UVLO is working property is
VCC>>(BST-UVLO threshold + Vf )+ Vout.
Therefore maximum output voltage is lower than Vin -3V.

※

When operation can be considered by Vin-Vout<3V, output voltage leaps up to near input voltage by BSTUVLO operation at

the time of a light load.
The waveform of operation and a mechanism are shown.

Figure 4. BST-UVLO image

BSTUVLO

4.2V

BST

VCC

NchFET OFF
(BST-UVLO mode)

BST charging current
(BST-UVLO mode)

BST charging current (normal mode)

Vout 1v/div

Figure 5. BSTUVLO operation waveform
Vout=5V Vin=7V Iout=0mA

①BSTUVLO detection →Nch MOS FET is turned OFF

↓

②Vout、Lx are discharged

⇒ErrorAMP output is raised

↓

③ The voltage between BST-Lx is secured enough

→BSTUVLO release

↓

④ In order to carry out a start of operation with Max Duty
cycle, an output leaps up.

↓

⑤ The voltage between BST-Lx is insufficient.

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As a measure, it is necessary to lower the order of division resistance and to put in a feed-forward capacitor between output-FB
terminals.
The setting method of the feed-forward capacitor between output division resistance and output-FB terminals is shown in below.

・

Output voltage setting

          The internal reference voltage of ERROR AMP is 0.75V. Output voltage is determined like (1) types.

          However, in order to avoid the BSTUVLO operation at the time of a reduced power and light load, please set up R1+R2 is
          satisfied the following formulas.

          The example of output resistances setting :    output voltage 5V        R1=3.9k

R2=0.68k

output voltage 12V R1=7.5k

R2=0.51k

・

Feed-forward capacitor

Csp

            Please mount feed-forward capacitor in parallel to output resistance R1.
            In order that a feed-forward capacitor may adjust the loop characteristic by adding the pair of a pole and zero to the loop
            characteristic. A phase margin is improved and transient response speed improves.
            The feed-forward capacitor Csp should use the value near the following formulas.



            The example of a Csp setting

：

output voltage 5V

R1=3.9k

R2=0.68k

Csp = 0.1uF or 0.22uF

output voltage 12V

R1=7.5k

R2=0.51k

Csp = 0.1uF

By above mentioned measure, there is not BSTUVLO operation in litgh load and Vin-Vout<3V.

②

Max duty , Ron
Maximum output voltage is limited by maxduty(min85%) and FET Ron.
In the case of Io=500mA, VCC drop down 500mA

0.8

=0.6V besides maxduty.

Vomax = (Vcc-Ron

Iomax)

0.85 (casually formula)

Considering the negative voltage in the case of pulling diode current,
Formula of maximum output voltage is
Vomax = VCC

0.7.

③

minimum on pulse
Minimum output voltage is limited by minimum on pulse (typ 100nsec).
Output voltage = frequency(typ 1.5MHz)

FET on time

Vin

If output voltage is lower than this formula , Output ripple voltage is boosted by intermittent spring.

0.75V

-
+

Csp

Vout

Figure 6. Output voltage setting

Vo=

0.75[V]

・・・

(1)

(R1+R2)

)

(

　・・・　







out

)

(

]

[

　　・・・　

Csp





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200

400

600

800

1000

1200

1400

1600

0.2

0.4

0.6

0.8

1.2

uen

FB Voltage [ V ]

●

Frequency fold-back function
This IC has the frequency fold-back function to prevent from over current with the circuit output is shorted.
The frequency fold-back has the function that the frequency is changed by FB voltage.
Figure.5 shows FB voltage vs frequency Characteristics.

When the output node is shorted, the IC narrows the frequency to 150kHz(typ) so that input current limiting.
This IC operates on1.5MHz in case of normal mode, the voltage of FB is about 0.75V.

●

Start-up Characteristics
When the IC is starting up, frequency reacts to the voltage of FB on the function of frequency fold back.
For the Softstart is operated by internal frequency clock, according to rising to the output voltage, the Softstart rising speed is
more faster. Please check the using condition and the application waveform (P.11,P14) because of the Start-up characteristics
changes to the output load and the output capacitor.

Figure 7. FB voltage -frequency Characteristics

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0.741

0.746

0.751

0.756

0.761

6.0

12.0

18.0

24.0

30.0

36.0

42.0

shol

]

Input Voltage [V]

-40

-20

100

]

Ta[

℃

]

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40

-20

100

Ta[

℃

]

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

Inp

]

Vcc [V]

Ta=150

℃

Ta=105

℃

Ta=25

℃

Ta=-50

℃

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-40

-20

100

input

[

]

Ta[

℃

]

Vin=42V

Vin=24V

Vin=12V

Vin=6V

●

Typical Performance Characteristics

(Unless otherwise specified, Ta=25

℃

, VCC=12V, Vo=5V, EN=3V)

Figure 8. Operating Current - Input Voltage

Figure 9. Operating Current - Temperature

Figure 10. UVLO Threshold - Temperature

Figure 11. Oscillation frequency - Temperature

Figure 12. Max Duty - Temperature

Figure 13. FB Pin Reference Voltage

– Input Voltage

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100

120

140

160

180

200

-40 -20

100

Ta[

℃

]

200

400

600

800

1000

1200

1400

1600

1800

2000

-40 -20

80 100 120 140 160

]

Ta [

℃

]

0.735

0.740

0.745

0.750

0.755

0.760

0.765

-40

-20

100

sho

]

Ta [

℃

]

200

400

600

800

1000

1200

1400

1600

1800

2000

-40

-20

100

-S

ide

]

Ta [

℃

]

Figure 14. FB Threshold - Temperature

Figure 15. Nch MOSFET ON Resistance -

Temperature

Figure 16. OCP threshold- Temperature

Figure 17. Min ON Time -

Temperature

Figure 18. EN Threshold Voltage -

Temperature

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-40

-20

100

shol

]

Ta[

℃

]

Vin=12V

Vin=42V

Vin=6V

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100

1000

fici

]

Output Current [mA]

Vin=8V

Vin=12V

Vin=24V

Vin=42V

●

Reference Characteristics of typical Application Circuits

VCC

BST

GND

VCC

15000pF

ON/OFF control

C1:4.7μF/50V

C2:10μF/10V

L1:6.8uH

5V/0.5A

680Ω

3.9kΩ

0.1uF

Parts

：

TOKO

DEM4518C 1235AS-H-6R8M

6.8

μH

TAIYO YUDEN

NR4018

6.8

μH

：

Murata

GRM32EB31H475KA87

4.7

μF/50V

：

Murata

GRM31CB11A106KA01

10μF/10V

：

Rohm

RB060M-60

Figure 20. Efficiency - Output Current

VOUT=5V

Figure 19. Typical Application Circuit (VOUT=5V)

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Figure 21. Start-up Characteristics

VIN=8V, IOUT=0mA ,VOUT=5V

Figure 22. Start-up Characteristics

VIN=8V, IOUT=500mA, VOUT=5V

Figure 23. Start-up Characteristics

VIN=12V, IOUT=0mA, VOUT=5V

Figure 25. Start-up Characteristics
VIN=42V, IOUT=0mA, VOUT=5V

Figure 26. tart-up Characteristics

VIN=42V, IOUT=500mA, VOUT=5V

Figure 24. Start-up Characteristics

VIN=12V, IOUT=500mA ,VOUT=5V

EN 10V/div

Lx
10V/div

VOUT
1V/div

EN 10V/div

Lx
10V/div

VOUT
1V/div

EN 20V/div

Lx
10V/div

VOUT
1V/div

EN 10V/div

Lx
10V/div

VOUT
1V/div

EN 20V/div

Lx
10V/div

EN 10V/div

Lx
10V/div

IOUT 0.2A/div

VOUT
1V/div

IOUT 0.2A/div

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100

1000

fici

]

Output Current [mA]

Vin=24V

Vin=18V

Vin=36V

Vin=42V

●

Reference Characteristics of typical Application Circuits

VCC

BST

GND

VCC

15000pF

ON/OFF control

C1:4.7

F/50V

C2:10

F/25V

L1: 10

12V/0.5A

510

7.5k

0.1

使用部品：

：

TOKO

DEM4518C 1235AS-H-6R8M

μH

TAIYO YUDEN

NR4018

μH

：

Murata

GRM32EB31H475KA87

4.7

μF/50V

：

Murata

GRM319B31E106KA12

10μF/25V

：

Rohm

RB060M-60

Figure 33. Efficiency - Output Current VOUT=12V

Figure 32. Typical Application Circuit (VOUT=12V)

*The efficiency is fall when the switching waveform is turning from intermittent mode to
continuous mode

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●

Application Components Selection Method

(1) Inductors

Something of the shield type that fulfills the current rating (Current value
Ipeak below), with low DCR is recommended.Value of Inductance influences
Inductor Ripple Current and becomes the cause of Output Ripple.
In the same way as the formula below, this Ripple Current can be made small
for as big as the L value of Coil or as high as the Switching Frequency.

Ipeak =Iout +

⊿

IL/2 [A]

(4)

(5)

(

⊿

IL: Output Ripple Current, f: Switching Frequency)

For design value of Inductor Ripple Current, please carry out design tentatively with about 20%

～

50% of Maximum

Input Current.
In the BD9G101G, it is recommended the below series of 4.7

μH

～

μH inductance value.

Recommended Inductor

TOKO DE4518C Series

TAIYO YUDEN NR4018 Series

(2) Input Capacitor

In order for capacitor to be used in input to reduce input ripple, mount low ceramic capacitor of ESR near the Vcc pin.
In the BD9G101G, it is recommended the 4.7uF or more capacitor value. In case of using the electrolytic capacitor,
mount 1uF ceramic capacitor in parallel in order to prevent oscillation

(3) Output Capacitor

In order for capacitor to be used in output to reduce output ripple, Low ceramic capacitor of ESR is recommended.
Also, for capacitor rating, on top of putting into consideration DC Bias characteristics, please use something whose
maximum rating has sufficient margin with respect to the Output Voltage.
Output ripple voltage is looked for using the following formula.

(6)

Please design in a way that it is held within Capacity Ripple Voltage.

In the BD9G101G, it is recommended a ceramic capacitor over

10μF.

        (4) Output voltage setting
                The internal reference voltage of ERROR AMP is 0.75V. Output voltage is determined like (7) types.

                However, in order to avoid the BSTUVLO operation at the time of a reduced power and light load, please set up R1+R2
                is satisfied the following formulas.

            The example of output resistances setting :    output voltage 5V        R1=3.9k

R2=0.68k

output voltage 12V R1=7.5k

R2=0.51k

Vpp=

⊿

ESR

[V]

Figure 45. Inductor Current

⊿

IL=

[A]

Vin-Vout

Vin

Vout

π×

0.75V

-
+

Csp

Vout

Figure 46. Output voltage setting

Vo=

0.75[V]

・・・

(7)

(R1+R2)

)

(

　・・・　







out

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●

Power Dissipation

It is shown below reducing characteristics of power dissipation to mount 70mm

70mm

1.6mm

, 1layer PCB.

Junction temperature must be designed not to exceed 150

℃

●

Power Dissipation Estimate

The following formulas show how to estimate the device power dissipation under continuous mode operations. They should
not be used if the device is working in the discontinuous conduction mode.
The device power dissipation includes:
1) Conduction loss

：

Pcon = IOUT

× RonH × VOUT/VCC

2) Switching loss: Psw = 2.5 × 10

–9

× VCC × IOUT × fsw

3) Gate charge loss

：

Pgc = 4.88 × 10

–9

× fsw

4) Quiescent current loss

：

Pq = 0.8× 10

–3

× VCC

Where:
IOUT is the output current (A

）

, RonH is the on-resistance of the high-side MOSFET

（

）

, VOUT is the output voltage (V).

VCC is the input voltage (V), fsw is the switching frequency (Hz).
Therefore
Power dissipation of IC is the sum of above dissipation.
Pd = Pcon + Psw + Pgc + Pq
For given Tj, Tj =Ta +

θja × Pd

Where:
Pd is the total device power dissipation (W), Ta is the ambient temperature (

℃

)

Tj is the junction temperature (

℃

θja

is the thermal resistance of the package (

℃

)

0.5

1.5

100

125

150

Ambient Temperature: Ta(

℃

)

issi

（

675mW

Figure 48. Power Dissipation ( 70mm

70mm

1.6mm

1layer PCB)

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001

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I/O equivalent circuit

Pin.

Name

Pin Equivalent Circuit

Pin.

Name

Pin Equivalent Circuit

GND

BST

VCC

BST

VCC

GND

Figure 49. I/O equivalent circuit

GND

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Operational Notes

Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC

’s power

supply pins.

Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.

Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

Thermal Consideration

Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in

deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when

the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum

rating, increase the board size and copper area to prevent exceeding the Pd rating.

Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.

Inrush Current

When  power  is  first  supplied  to  the  IC,  it  is  possible  that  the  internal  logic  may  be  unstable  and  inrush
current may flow instantaneously due to the  internal  powering sequence  and  delays,  especially  if the IC
has  more  than  one  power  supply.  Therefore,  give  special  consideration  to  power  coupling  capacitance,
power wiring, width of ground wiring, and routing of connections.

Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to

stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely  low  capacitance.  If  left  unconnected,  the  electric  field  from  the  outside  can  easily  charge  it.  The  small
charge  acquired  in  this  way  is  enough  to  produce  a  significant  effect  on  the  conduction  through  the  transistor  and
cause unexpected operation of the IC. So unless otherwise specified, unused input  pins should be connected to the
power supply or ground line.

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12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic  diodes  inevitably  occur  in  the  structure  of  the  IC.  The  operation  of  parasitic  diodes  can  result  in  mutual
interference among circuits, operational faults, or physical damage.  Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.

Figure50. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).

15. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.

P Substrate

GND

N P

P Substrate

GND

Parasitic

Elements

Pin A

Pin B

Parasitic

Elements

GND

Parasitic

Elements

Transistor (NPN)

Resistor

N Region

close-by

Parasitic

Elements

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Ordering part number

Part Number

package
G: SSOP6

Packaging and forming specification
TR: Embossed tape and reel

●

External information

１

pin mark

LOT No

SSOP6

Notice-PGA-E

Rev.003

Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment

(Note 1)

, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (

“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM

’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

CHINA

CLASS

Ⅲ

CLASS

Ⅲ

CLASS

Ⅱ

CLASS

Ⅲ

CLASS

Ⅳ

CLASS

Ⅲ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or

liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl

S, NH

, SO

, and NO

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering

[h] Use of the Products in places subject to dew condensation

4.  The Products are not subject to radiation-proof design.

5.  Please verify and confirm characteristics of the final or mounted products in using the Products.

6.    In  particular,  if  a  transient  load  (a  large  amount  of  load  applied  in  a  short  period  of  time,  such  as  pulse.  is  applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a]  the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b]  the temperature or humidity exceeds those recommended by ROHM
[c]  the Products are exposed to direct sunshine or condensation
[d]  the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM

’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.