3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
NOTES :
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
4. V
F
= 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V
F
= 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
T V S
P6FMBJ
SERIES
DO-214AA
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
2003-12
Ratings at 25
o
C ambient temperature unless otherwise specified.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C ( Note 2 )
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 50A for
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-55 to + 150
0
C
U N I T S
unidirectional only ( Note 3,4 )
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
Minimum 600
100
SEE NOTE 4
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
I
PPM
Amps
SEE TABLE 1
Peak Forward Surge Current, 8.3mS single half sine wave super-
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only
P
M
(
AV
)
5.0
Watts
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
0.030 (0.76)
0.060 (1.52)
0.084 (2.13)
0.096 (2.44)
0.160 (4.06)
0.180 (4.57)
0.130 (3.30)
0.155 (3.94)
0.083 (2.11)
0.077 (1.96)