ENABLE YOUR PROJECTS
WITH UMS
GaN
High Power Amplifiers
up to 50W in
hermetic package
Build your own solution with UMS
www.ums-rf.com
Performance
High level of performance
in short pulsed mode:
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50W in X-Band / 35% PAE
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30W in Ku Band / 25% PAE
RF ports matched to 50 ohms
Technology
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0.25µm GaN on SiC
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Proprietary technology
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European source
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Hermetic package
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Internal assembly line:
- Eutectic die attach
- Micro-wire bondings
- Package sealing and
leak testing
Design Know How
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Control interfaces for HPA
fast switching times (<10ns)
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3D simulation for optimum
integration
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RF transitions optimized up
to 18GHz
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Thermally optimized
Innovative product solutions
UMS 2017 - Printed on PEFC paper - Smith Corporate : 01 69 59 1
1 30 - www
.smithcorporate.fr
Parts description
Parts description
Contact us:
Worldwide distributor:
Richardson RFPD
www.richardsonrfpd.com
UMS SAS – EMEA,
Ph: +33 1 69 86 32 00
mktsales@ums-rf.com
UMS USA, Inc. - America,
Ph: +1 781 791 5078
philippe.labasse@ums-rf.com
UMS - Asia,
Ph: +86 21 6103 1703
xavier.taltasse@ums-rf.com
www.ums-rf.com
Main Features
for X Band HPA
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Psat: 47.5dBm @Pin=28dBm
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PAE: 35% @Pin=28dBm
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Power Gain: 19dB
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Small Signal Gain: 27dB
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Bias: Vd=30V, Idq=2.2A, Idsat=5A,
Vg#-3.2V
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Short Vg pulses thru control interfaces
Main Features
for Ku Band HPA
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Psat: 45dBm @Pin=33dBm
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PAE: 25% @Pin=33dBm
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Power Gain: 12dB
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Small Signal Gain: 20dB
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Bias: Vd=30V, Idq=2.2A, Idsat=4.5A,
Vg#-3.2V
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Short Vg pulses thru control interfaces
Package thermal management performed on Cu-Mo-Cu base.
Ceramic-metal Flangeless package dimensions: 17.4 x 17.9 x 4.5 mm.