Description
02500002-001 Rochester Memory IC CMOS Static RAM 1KX4, 300ns, CMOS, +4.5V to +5V 18 Pin CCERDIP
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation
On-chip latches are provided for addresses allowing ef?cient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays
Gated inputs allow lower operating current and also elimi- nate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an inde?nite period of time.The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation
On-chip latches are provided for addresses allowing ef?cient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays
Gated inputs allow lower operating current and also elimi- nate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an inde?nite period of time.^
This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
Low Power Standby 125uW Max
Low Power Operation 35mW/MHz Max
Data Retention . at 2.0V Min
TTL Compatible Input/Output
Common Data Input/Output
Three-State Output
Standard JEDEC Pinout
Fast Access Time 120/200ns Max
18 Pin Package for High Density
Gated Inputs – No Pull Up or Pull Down ResistorsRequired
On-Chip Address Register
Manufacturer:Electronic Components
Datasheet:HM1-6514-9-Intersil.pdf
