Description
1N5821 ON Semiconductor Diode Schottky 40V 3A 2-Pin DO-201AD
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
The 1N5821 is a single-phase Schottky Power Diode with axial-leaded terminal and a molded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. Color band denotes cathode end polarity.
- Low forward voltage drop
- High reliability
- High surge current capability
- 21V Maximum RMS voltage
- 30V Maximum DC blocking voltage
Manufacturer:ON Semiconductor
Datasheet:1N5820-D.PDF
