Description
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate^charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at^high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
SPECIFICATIONS
Part Category: Transistors
Manufacturer: Unisonic Technologies Co., Ltd.
Description: 1200mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223
Mfr Package Description HALOGEN FREE PACKAGE-3
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 11.5 ohm
DS Breakdown Voltage-Min 600.0 V
Feedback Cap-Max (Crss) 4.0 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Manufacturer:Unisonic
Datasheet:1N60.pdf
