1N6461 MicroSemi Transient Voltage Suppressors 5V 500 W Axial

1N6461 MicroSemi Voltage Suppressors 5V 500W 5VWM 9VC Axial Uni-junction

Description

1N6461 MicroSemi Transient Voltage Suppressors 5V 500 W 5VWM 9VC Axial Uni-junction

This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressor s (TVS) are military qualified to MIL – PRF – 19500/551 and are ideal for high – reliability applications where a failure cannot be tolerated. W orking peak “s tandoff” v oltage s are available from 5.0 to 51.6 v olts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration.

Description
This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak “Standoff” voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration.
  Electrical Rating   Symbol   Min   Typ   Max   Unit
 Clamping Voltage (V)  VC      9.00  V
 Forward Clamping Voltage (V)  VCF      -3.50  V
 Reverse Breakdown Voltage (V)  V(BR)  5.60      V
 Reverse Leakage Current (uA)  ID      3000.00  µA
 Temperature Coefficient of Breakdown Voltage(mV/C)  αV(BR)      0.04  mV/°C
 Temperature Coefficient of Breakdown Voltage(mV/C)  αV(BR)      -0.03  mV/°C
  Maximum Electrical Rating   Symbol   Min   Typ   Max   Unit
 Peak Pulse Power (W)  PPP      500.00  W
 Rated Working Standoff Voltage (V)  VWM      5.00  V

Features, Applications

The 1N64xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. These devices are constructed using a p-n junction TVS diode in a hermetically sealed, voidless glass package. The hermetically sealed package provides high reliability in harsh environmental conditions. TVS diodes are further characterized by their high surge capability, low operating and clamping voltages, and a theoretically instantaneous response time. This makes them ideal for use as board level protection for sensitive semiconductor components. These devices are DESC QPL qualified to MIL-S-19500/551.

500 Watts Peak Pulse Power (tp = 10/1000µs) Voidless hermetically sealed glass package Metallurgically bonded High surge capacity Unidirectional Available in JTX, and JTXV versions per MIL-S-19500/551

Hermetically sealed glass package Tinned copper leads Marking : P/N, date code, logo, & cathode band

Aerospace & Industrial Electronics Board Level Protection Airborne Systems Shipboard Systems Ground Systems

RATING Peak Pulse Power (tp x 1000µs) Operating Temperature Storage Temperature Steady-State Power Dissipation 75ºC (3/8″) SYMBOL Ppk Tj Tstg PD VALUE +175 3 UNIT Watts °C Watts

STEADY STATE DERATING CHARACTERISTICS FOR FREE AIR MOUNTING
Pp or Ipp % of max ratings Pulse conditions as defined X 1000us impulse waveform
NOTES : 1. Controlling dimension is inches. 2. Includes uncontrolled area of device leads.

Manufacturer:Microsemi
Datasheet:Microsemi/LDS-0286.pdf

Additional information

Weight 0.001 lbs

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