Description
20N06 LGE MOSFET Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 175C
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: TO252
Manufacturer Part Number: 20N06-252
Electronic Components
