Description
2N2219A National Semiconductor Bipolar Transistors – BJT NPN General Purpose
The 2N2219A from National Semiconductor is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
- Collector to emitter voltage (Vce) is 40V
- Collector current (Ic) is 0.6A
- Power dissipation (Pd) is 3W
- Collector to emitter saturation voltage of 1V at 500mA collector current
- DC current gain (hFE) of 35 at 0.1mA collector current
- Operating junction temperature range from 175°C
Applications
Power Management; Consumer Electronics; Portable Devices; Industrial
Manufacturer Part Number: 2N2219A+
National Semiconductor
