Description
– 2N3906 Transistor RF Bipolar Transistor Power Dissipation:0.625W To-92
Description: Transistor Polarity:Dual PNP; Power Dissipation:0.625W; C-E Breakdown Voltage:-40V; DC Current Gain Min (hfe):30; Collector Current:0.2A; Package/Case:TO-92; Leaded Process Compatible:No; DC Current Gain Max (hfe):300 RoHS Compliant: No
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds.
Manufacturer Part Number: 2N3906
Electronic Components
