Description
2N6796 NJS New Jersey Semiconductor Transistor MOSFET N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-205AF-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 8 A
Rds On – Drain-Source Resistance: 195 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 25 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 45 ns
Height: 4.54 mm
Length: 8.3 mm
Product Type: MOSFET
Rise Time: 75 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 30 ns
Width: 8.3 mm
Unit Weight: 0.229281 oz
Manufacturer: Electronic Components
MFG Part #: 2N6796
