Description
2N6798 NJS New Jersey Semiconductor MOSFET N-Channel 200V 5.5A 800mW 25W Through Hole TO-39 RoHS
Specifications
Product Category:MOSFET
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-205AF-3
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:200 V
Id – Continuous Drain Current:22 A
Rds On – Drain-Source Resistance:400 mOhms
Vgs – Gate-Source Voltage:- 20 V, + 20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd – Power Dissipation:25 W
Channel Mode:Enhancement
Configuration:Single
Height:4.54 mm
Length:8.3 mm
Transistor Type:1 N-Channel
Width:8.3 mm
Fall Time:40 ns
Product Type:MOSFET
Rise Time:50 ns
Subcategory:MOSFETs
Typical Turn-Off Delay Time:50 ns
Typical Turn-On Delay Time:30 ns
Manufacturer: Electronic Components
MFG Part #: 2N6798
