2N7002P,235 NXP N-Channel Trench Mosfet 60V 360mA SOT-23-3

2N7002P,235 NXP Small Signal Field-Effect Transistor, 0.36A I(D),60V, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-236AB

Description

2N7002P,235 NXP N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB (SOT23)
Specifications

Manufacturer: Nexperia
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 360 mA
Rds On – Drain-Source Resistance: 1.6 Ohms
Vgs th – Gate-Source Threshold Voltage: 1.1 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 0.6 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 420 mW
Channel Mode: Enhancement
Packaging: Reel
Height: 1 mm
Length: 3 mm
Product: MOSFET Small Signal
Transistor Type: 1 N-Channel Trench MOSFET
Width: 1.4 mm
Brand: Nexperia
Fall Time: 5 ns
Product Type: MOSFET
Rise Time: 4 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 3 ns
Unit Weight: 0.000282 oz
Manufacturer Part Number: 2N7002P,235
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