Description
2N834A Central Semiconductor Bipolar Transistor NPN Amplifier/Switch 200mA 30V 3-Pin TO-18 Through Hole Box
Specifications
Manufacturer:Central Semiconductor
Product Category:Bipolar Transistors – BJT
RoHS:N
Mounting Style:Through Hole
Package / Case:TO-18-3
Transistor Polarity:NPN
Configuration:Single
Collector- Emitter Voltage VCEO Max:30 V
Collector- Base Voltage VCBO:40 V
Emitter- Base Voltage VEBO:5 V
Collector-Emitter Saturation Voltage:0.25 V
Maximum DC Collector Current:-
Pd – Power Dissipation:300 mW
Gain Bandwidth Product fT:500 MHz
Minimum Operating Temperature:- 65 C
Maximum Operating Temperature:+ 200 C
Series:2N834
Packaging:Bulk
Technology:Si
Brand:Central Semiconductor
Continuous Collector Current:200 mA
DC Collector/Base Gain hfe Min:25 at 10 mA, 1 V
Product Type:BJTs – Bipolar Transistors
Factory Pack Quantity:2000
Subcategory:Transistors
Manufacturer:Electronic Components
Datasheet:2N834A.pdf