Description
2SC5200-O(Q) Toshiba Bipolar (BJT) Transistor NPN 30MHz NPN 230V 15A TO-3P(L) RoHS
Specifications
Manufacturer: Toshiba
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-3P-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 230 V
Collector- Base Voltage VCBO: 230 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 15 A
Pd – Power Dissipation: 150000 mW
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 2SC
Packaging: Tray
Brand: Toshiba
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 55
DC Current Gain hFE Max: 160
Height: 26 mm
Length: 20.5 mm
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: Transistors
Technology: Si
Width: 5.2 mm
Unit Weight: 0.239863 oz
Manufacturer: Electronic Components
MFG Part #: 2SC5200-O(Q)
