Description
4N150G-TQ2-R UTC N-channel Transistor: N-MOSFET, unipolar, 1500V, 2.5A, 160W, TO220-3 RoHS
Specifications
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 1.5 kV
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 50 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Channel Mode: Enhancement
Configuration: Single
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
The UTC 4N150 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristi cs. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
Manufacturer:Unisonic
Datasheet:UTC/4N150.pdf
