Description
AT45DB041E-SSHN2B-T Adesto Technologies NOR Flash Memory IC 4Mb (256 Bytes x 2048 pages) SPI 85 MHz 8-SOIC RoHS
Specifications
Manufacturer: Adesto Technologies
Product Category: NOR Flash
Mounting Style: SMD/SMT
Package / Case: SOIC-Narrow-8
Series: AT45DB041E
Memory Size: 4 Mbit
Supply Voltage – Min: 1.65 V
Supply Voltage – Max: 3.6 V
Interface Type: SPI
Maximum Clock Frequency: 70 MHz
Organization: 512 k x 8
Data Bus Width: 8 bit
Timing Type: Synchronous
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 85 C
Packaging: Reel
Architecture: Chip Erase
Brand: Adesto Technologies
Memory Type: NOR
Product Type: NOR Flash
Speed: 70 MHz
Reel:4000
Subcategory: Memory & Data Storage
Supply Current – Max: 15 mA
Tradename: DataFlash
Unit Weight: 0.019048 oz
The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide varietyof digital voice, image, program code, and data storage applications. The AT45DB041E also supports the RapidS serialinterface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also contains two SRAM buffers of256/264 bytes each. The buffers allow receiving of data while main memory is being reprogrammed.Interleaving between both buffers can dramatically increase a system’s ability to write a continuous data stream. Inaddition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or bytealterability) can be easily handled with a self-contained three step read-modify-write operation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, theDataFlash uses a serial interface to sequentially access its data. The simple sequential access dramatically reducesactive pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, andreduces package size. The device is optimized for use in many commercial and industrial applications wherehigh-density, low-pin count, low-voltage, and low-power are essential.To allow for simple in-system re-programmability, the AT45DB041E does not require high input voltages forprogramming. The device operates from a single 1.65V to 3.6V power supply for the erase and program and readoperations. The AT45DB041E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consistingof the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).All programming and erase cycles are self-timed.
The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide varietyof digital voice, image, program code, and data storage applications. The AT45DB041E also supports the RapidS serialinterface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also contains two SRAM buffers of256/264 bytes each. The buffers allow receiving of data while main memory is being reprogrammed.Interleaving between both buffers can dramatically increase a system’s ability to write a continuous data stream. Inaddition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or bytealterability) can be easily handled with a self-contained three step read-modify-write operation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, theDataFlash uses a serial interface to sequentially access its data. The simple sequential access dramatically reducesactive pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, andreduces package size. The device is optimized for use in many commercial and industrial applications wherehigh-density, low-pin count, low-voltage, and low-power are essential.To allow for simple in-system re-programmability, the AT45DB041E does not require high input voltages forprogramming. The device operates from a single 1.65V to 3.6V power supply for the erase and program and readoperations. The AT45DB041E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consistingof the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).All programming and erase cycles are self-timed.
Key Features
Single 1.65V – 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
256 bytes per page
264 bytes per page (default)
Page size can be factory pre-configured for 256 bytes
Two fully independent SRAM data buffers (256/264 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (256/264 bytes)
Block Erase (2KB)
Sector Erase (64KB)
Chip Erase (4-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
400nA Ultra-Deep Power-Down current (typical)
3µA Deep Power-Down current (typical)
25µA Standby current (typical at 20MHz)
11mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150″ wide and 0.208″ wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
Die in Wafer Form
Manufacturer:Atmel
Datasheet:Atmel/DS-AT45DB041E-8783.pdf
