Description
BC846PNE6327 Infineon Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP 65V 0.1A 6-Pin SOT-363 T/R
Key Features
For AF input stage and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP transistor in one package
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Specs
Case/Package SOT-363-6
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Voltage (VCEO) 65V
Collector-emitter Voltage-Max 650mV
Current Rating 100mA
Element Configuration Dual
Emitter Base Voltage (VEBO) 6V
Frequency 250MHz
Gain Bandwidth Product 250MHz
Lead Free Lead Free
Max Collector Current 100mA
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Mount Surface Mount
Number of Elements 2
Number of Pins 6
Package Quantity 3000
Packaging Tape and Reel
Polarity NPN, PNP
Power Dissipation 250mW
Transition Frequency 250MHz
Voltage Rating (DC) 65V
Subcategory: Transistors
Part # Aliases: BC846PNE6327XT
Unit Weight: 0.000265 oz
Manufacturer Part Number: BC846PNE6327
Infineon Technologies
