Description
KEC Corporation BC848-C-RTK/P BJT, NPN, 30VDC, SOT-23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:30V, Transition Frequency ft:100MHz, Power Dissipation Pd:225mW, DC Collector Current:100mA, DC Current Gain hFE:420, No. of Pins:3 , RoHS
The BC848C from KEC is a surface mount, NPN epitaxial silicon transistor in SOT-23 package. This device is designed for switching, amplification and suitable for automotive insertion in thick and thin film circuit.
- Collector to emitter voltage (Vce) of 30V
- Collector to emitter saturation voltage of 600mV at 100mA collector current
- Power dissipation of 310mW
- DC collector current of 100mA
- DC current gain of 110 at Ic=2mA
- Operating junction temperature range from -65°C to 150°C
Applications
Signal Processing; Power Management; Portable Devices; Consumer Electronics; Industrial
Manufacturer Part Number: BC848-C-RTK/P
KEC Semiconductors
