Description
BFS483H6327XTSA1 Infineon Technologies RF Bipolar Transistor RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6
Specifications
Manufacturer: Infineon
Product Category: RF Bipolar Transistors
RoHS: Details
Series: BFS483
Technology: Si
Package / Case: SOT-363-6
Packaging: Cut Tape
Packaging: Reel
Brand: Infineon Technologies
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: BFS 483 H6327 SP000750464
Unit Weight: 0.000265 oz
Specifications
Manufacturer: Infineon
Product Category: RF Bipolar Transistors
Series: BFS483
Transistor Type: Bipolar
Technology: Si
Transistor Polarity: NPN
Operating Frequency: 8 GHz
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 12 V
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 65 mA
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-363
Packaging: Cut Tape
Packaging: Reel
Type: RF Bipolar Small Signal
Brand: Infineon Technologies
Maximum DC Collector Current: 65 mA
Pd – Power Dissipation: 450 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: BFS483H6327XT SP000750464 BFS483H6327XTSA1
Unit Weight: 0.000212 oz
Manufacturer: Infineon Technologies
MFG Part #: BFS483H6327XTSA1
