Description
Infineon Technologies BSC019N02KS G Transistor MOSFET N-CH 20V 100A 20V 100A OptiMOS 2 8-Pin TDSON T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 30 A
Rds On – Drain-Source Resistance: 1.95 mOhms
Vgs – Gate-Source Voltage: 12 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.8 W
Configuration: Single
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.27 mm
Length: 5.9 mm
Series: OptiMOS 2
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Fall Time: 8 ns
Moisture Sensitive: Yes
Product Type: MOSFET
Rise Time: 187 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 15 ns
Part # Aliases: BSC019N02KSGAUMA1 SP000307376 BSC19N2KSGXT BSC019N02KSGAUMA1
Unit Weight: 0.004047 oz
Manufacturer Part Number: BSC019N02KS-G
Infineon Technologies