BSC031N06NS3 G Infineon Transistor MOSFET N-CH 60V 100A 8-TDSON

BSC031N06NS3 G Infineon Transistor MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R – Tape and Reel

SKU: BSC031N06NS3-G Categories: , , Tag: Brand:

Description

BSC031N06NS3 G Infineon Transistor N-Channel 60V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8
Specifications

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 3.1 mOhms
Vgs – Gate-Source Voltage: 20 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single Quad Drain Triple Source
Pd – Power Dissipation: 2.5 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.27 mm
Length: 5.9 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Fall Time: 16 ns
Product Type: MOSFET
Rise Time: 161 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 63 ns
Typical Turn-On Delay Time: 38 ns
Part # Aliases: BSC031N06NS3GATMA1 BSC31N6NS3GXT SP000451482
Unit Weight: 0.003527 oz
Manufacturer:Infineon Technologies
Datasheet:Infineon/bsc031n06ns3.pdf

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