Description
BSC060P03NS3E G Infineon Power Mosfet Single P-Channel 30V -100A 6 mOhm 61 nC OptiMOS TDSON-8 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 6 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.9 V
Qg – Gate Charge: 61 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 83 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.27 mm
Length: 5.9 mm
Series: OptiMOS P3
Transistor Type: 1 P-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 32 S
Fall Time: 34 nS
Product Type: MOSFET
Rise Time: 139 nS
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 66 nS
Typical Turn-On Delay Time: 15 ns
Part # Aliases: SP000472984 BSC6P3NS3EGXT BSC060P03NS3EGATMA1
Unit Weight: 0.003527 oz
Manufacturer: Infineon Technologies
MFG Part #: BSC060P03NS3E-G
