Description
BSP315PH6327XTSA1 Infineon Transistor: P-MOSFET, unipolar, -60V, -1.17A, 1.8W, PG-SOT223
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-223-4
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: – 60 V
Id – Continuous Drain Current: – 1.17 A
Rds On – Drain-Source Resistance: 1.4 Ohms
Vgs th – Gate-Source Threshold Voltage: – 1 V
Vgs – Gate-Source Voltage: – 4.5 V
Qg – Gate Charge: 5.2 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 1.8 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.6 mm
Length: 6.5 mm
Series: BSP315
Transistor Type: 1 P-Channel
Width: 3.5 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 0.7 S
Fall Time: 19 ns
Product Type: MOSFET
Rise Time: 9 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 24 ns
Part # Aliases: BSP315P H6327 SP001058830
Unit Weight: 0.003951 oz
Manufacturer Part Number: BSP315PH6327XTSA1
Infineon Technologies
