Description
BSS138NH6327XTSA2 Infineon Technologies TRANSISTOR N-Channel 60 V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23 T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 230 mA
Rds On – Drain-Source Resistance: 2.2 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 1 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 360 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8.2 ns
Forward Transconductance – Min: 100 mS
Height: 1.1 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 3 ns
Series: BSS138
Reel: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 6.7 ns
Typical Turn-On Delay Time: 2.3 ns
Width: 1.3 mm
Part # Aliases: BSS138N H6327 SP000919330
Unit Weight: 0.000282 oz
Manufacturer Part Number: BSS138NH6327XTSA2
Infineon Technologies
