Description
BSS84W-7-F Diodes Incorporated Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount Reel RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-323-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 130 mA
Rds On – Drain-Source Resistance: 10 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 800 mV
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 200 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Diodes Incorporated
Configuration: Single
Forward Transconductance – Min: 0.05 S
Height: 1 mm
Length: 2.2 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Series: BSS84
Reel Quantity:3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Type: Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 10 ns
Width: 1.35 mm
Unit Weight: 0.000212 oz
The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Manufacturer: Diodes Inc.
MFG Part #: BSS84W-7-F
